DE60023573D1 - Verfahren zur Herstellung eines Kondensators mit Tantalpentoxid in einem integrierten Schaltkreis - Google Patents

Verfahren zur Herstellung eines Kondensators mit Tantalpentoxid in einem integrierten Schaltkreis

Info

Publication number
DE60023573D1
DE60023573D1 DE60023573T DE60023573T DE60023573D1 DE 60023573 D1 DE60023573 D1 DE 60023573D1 DE 60023573 T DE60023573 T DE 60023573T DE 60023573 T DE60023573 T DE 60023573T DE 60023573 D1 DE60023573 D1 DE 60023573D1
Authority
DE
Germany
Prior art keywords
capacitor
producing
integrated circuit
tantalum pentoxide
pentoxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60023573T
Other languages
English (en)
Other versions
DE60023573T2 (de
Inventor
Glenn B Alers
Pradip Kumar Roy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia of America Corp
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Application granted granted Critical
Publication of DE60023573D1 publication Critical patent/DE60023573D1/de
Publication of DE60023573T2 publication Critical patent/DE60023573T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE60023573T 1999-01-12 2000-01-06 Verfahren zur Herstellung eines Kondensators mit Tantalpentoxid in einem integrierten Schaltkreis Expired - Lifetime DE60023573T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11553099P 1999-01-12 1999-01-12
US115530P 1999-01-12
US345556 1999-06-30
US09/345,556 US6265260B1 (en) 1999-01-12 1999-06-30 Method for making an integrated circuit capacitor including tantalum pentoxide

Publications (2)

Publication Number Publication Date
DE60023573D1 true DE60023573D1 (de) 2005-12-08
DE60023573T2 DE60023573T2 (de) 2006-07-27

Family

ID=26813297

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60023573T Expired - Lifetime DE60023573T2 (de) 1999-01-12 2000-01-06 Verfahren zur Herstellung eines Kondensators mit Tantalpentoxid in einem integrierten Schaltkreis

Country Status (6)

Country Link
US (1) US6265260B1 (de)
EP (1) EP1020901B1 (de)
JP (2) JP2000208744A (de)
KR (1) KR20000053452A (de)
DE (1) DE60023573T2 (de)
TW (1) TW459381B (de)

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US6100155A (en) * 1998-09-10 2000-08-08 Chartered Semiconductor Manufacturing, Ltd. Metal-oxide-metal capacitor for analog devices
US6696718B1 (en) * 1999-04-06 2004-02-24 Micron Technology, Inc. Capacitor having an electrode formed from a transition metal or a conductive metal-oxide, and method of forming same
KR100335773B1 (ko) * 1999-06-29 2002-05-09 박종섭 반도체 소자의 캐패시터 제조 방법
JP2001057412A (ja) * 1999-08-19 2001-02-27 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6337289B1 (en) * 1999-09-24 2002-01-08 Applied Materials. Inc Method and apparatus for integrating a metal nitride film in a semiconductor device
KR100482753B1 (ko) * 1999-11-09 2005-04-14 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조방법
KR100403611B1 (ko) * 2000-06-07 2003-11-01 삼성전자주식회사 금속-절연체-금속 구조의 커패시터 및 그 제조방법
US6989304B1 (en) 2000-08-11 2006-01-24 Renesas Technology Corp. Method for manufacturing a ruthenium film for a semiconductor device
US6455370B1 (en) * 2000-08-16 2002-09-24 Micron Technology, Inc. Method of patterning noble metals for semiconductor devices by electropolishing
US6451646B1 (en) * 2000-08-30 2002-09-17 Micron Technology, Inc. High-k dielectric materials and processes for manufacturing them
US7378719B2 (en) * 2000-12-20 2008-05-27 Micron Technology, Inc. Low leakage MIM capacitor
US6794705B2 (en) * 2000-12-28 2004-09-21 Infineon Technologies Ag Multi-layer Pt electrode for DRAM and FRAM with high K dielectric materials
JP2002319636A (ja) * 2001-02-19 2002-10-31 Nec Corp 半導体記憶装置及びその製造方法
US6617266B2 (en) * 2001-04-12 2003-09-09 Applied Materials, Inc. Barium strontium titanate annealing process
US6784049B2 (en) * 2002-08-28 2004-08-31 Micron Technology, Inc. Method for forming refractory metal oxide layers with tetramethyldisiloxane
US7030042B2 (en) 2002-08-28 2006-04-18 Micron Technology, Inc. Systems and methods for forming tantalum oxide layers and tantalum precursor compounds
KR100450685B1 (ko) * 2002-11-30 2004-10-01 삼성전자주식회사 유전막 공정을 단순화하여 반도체 소자의 커패시터를제조하는 방법과 그 유전막을 형성하는 장치
JPWO2005031869A1 (ja) * 2003-09-26 2006-12-07 東京エレクトロン株式会社 半導体装置，半導体装置の製造方法，半導体製造装置及びコンピュータ記録媒体
US7524774B2 (en) * 2003-09-26 2009-04-28 Tokyo Electron Limited Manufacturing method of semiconductor device, semiconductor manufacturing apparatus, plasma nitridation method, computer recording medium, and program
US20050101147A1 (en) * 2003-11-08 2005-05-12 Advanced Micro Devices, Inc. Method for integrating a high-k gate dielectric in a transistor fabrication process
JP2005217189A (ja) * 2004-01-29 2005-08-11 Matsushita Electric Ind Co Ltd 容量素子及びその製造方法
US7126182B2 (en) * 2004-08-13 2006-10-24 Micron Technology, Inc. Memory circuitry
US7745865B2 (en) * 2005-07-20 2010-06-29 Taiwan Semiconductor Manufacturing Co., Ltd. Devices and methods for preventing capacitor leakage
US8410535B2 (en) * 2011-04-25 2013-04-02 Nanya Technology Corporation Capacitor and manufacturing method thereof
JP5970834B2 (ja) * 2012-02-02 2016-08-17 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、及び、電子機器
US9859215B1 (en) 2016-08-17 2018-01-02 International Business Machines Corporation Formation of advanced interconnects
US9852990B1 (en) 2016-08-17 2017-12-26 International Business Machines Corporation Cobalt first layer advanced metallization for interconnects
US9941212B2 (en) * 2016-08-17 2018-04-10 International Business Machines Corporation Nitridized ruthenium layer for formation of cobalt interconnects
US10115670B2 (en) 2016-08-17 2018-10-30 International Business Machines Corporation Formation of advanced interconnects including set of metal conductor structures in patterned dielectric layer
US9716063B1 (en) 2016-08-17 2017-07-25 International Business Machines Corporation Cobalt top layer advanced metallization for interconnects
CN106298947B (zh) * 2016-10-12 2020-02-07 中国科学院微电子研究所 一种双栅InGaAs PMOS场效应晶体管

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JP3230901B2 (ja) * 1993-06-22 2001-11-19 株式会社東芝 半導体装置の製造方法及びその製造装置
JP2897631B2 (ja) * 1993-12-28 1999-05-31 日本電気株式会社 半導体集積回路装置および製造方法
JP3319138B2 (ja) * 1994-03-17 2002-08-26 ソニー株式会社 タンタルを含む高誘電体膜の形成方法
JP2636755B2 (ja) * 1994-11-09 1997-07-30 日本電気株式会社 半導体装置および半導体装置の製造方法
US5576240A (en) 1994-12-09 1996-11-19 Lucent Technologies Inc. Method for making a metal to metal capacitor
KR0165484B1 (ko) * 1995-11-28 1999-02-01 김광호 탄탈륨산화막 증착 형성방법 및 그 장치
KR100207467B1 (ko) * 1996-02-29 1999-07-15 윤종용 반도체 장치의 커패시터 제조 방법
JPH09246494A (ja) * 1996-03-01 1997-09-19 Texas Instr Japan Ltd 誘電体キャパシタと誘電体メモリ装置、及びこれらの製造方法
US5910880A (en) * 1997-08-20 1999-06-08 Micron Technology, Inc. Semiconductor circuit components and capacitors
TW356601B (en) 1997-08-28 1999-04-21 Tsmc Acer Semiconductor Mfg Corp Method for making memory cell of self-aligning field plate and structure of the same
US5903493A (en) 1997-09-17 1999-05-11 Lucent Technologies Inc. Metal to metal capacitor apparatus and method for making
US5912797A (en) 1997-09-24 1999-06-15 Lucent Technologies Inc. Dielectric materials of amorphous compositions and devices employing same
JP3112073B2 (ja) * 1997-11-13 2000-11-27 日本電気株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
EP1020901A2 (de) 2000-07-19
US6265260B1 (en) 2001-07-24
JP2007266616A (ja) 2007-10-11
JP2000208744A (ja) 2000-07-28
TW459381B (en) 2001-10-11
DE60023573T2 (de) 2006-07-27
KR20000053452A (ko) 2000-08-25
JP5247059B2 (ja) 2013-07-24
EP1020901B1 (de) 2005-11-02
EP1020901A3 (de) 2000-12-06

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