DE60000178D1 - Oberflächenemittierender Vielfachlaser mit vertikalem Resonator und Herstellungsverfahren - Google Patents

Oberflächenemittierender Vielfachlaser mit vertikalem Resonator und Herstellungsverfahren

Info

Publication number
DE60000178D1
DE60000178D1 DE60000178T DE60000178T DE60000178D1 DE 60000178 D1 DE60000178 D1 DE 60000178D1 DE 60000178 T DE60000178 T DE 60000178T DE 60000178 T DE60000178 T DE 60000178T DE 60000178 D1 DE60000178 D1 DE 60000178D1
Authority
DE
Germany
Prior art keywords
manufacturing process
multiple laser
vertical resonator
emitting multiple
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60000178T
Other languages
English (en)
Other versions
DE60000178T2 (de
Inventor
Muhammad Ashrafal Alam
Mark S Hybertsen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agere Systems LLC
Original Assignee
Agere Systems Optoelectronics Guardian Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agere Systems Optoelectronics Guardian Corp filed Critical Agere Systems Optoelectronics Guardian Corp
Application granted granted Critical
Publication of DE60000178D1 publication Critical patent/DE60000178D1/de
Publication of DE60000178T2 publication Critical patent/DE60000178T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2077—Methods of obtaining the confinement using lateral bandgap control during growth, e.g. selective growth, mask induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE60000178T 1999-01-26 2000-01-19 Oberflächenemittierender Vielfachlaser mit vertikalem Resonator und Herstellungsverfahren Expired - Fee Related DE60000178T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11723999P 1999-01-26 1999-01-26
US09/370,667 US6560262B1 (en) 1999-01-26 1999-08-09 Vertical cavity surface emitting laser array and a process for making same

Publications (2)

Publication Number Publication Date
DE60000178D1 true DE60000178D1 (de) 2002-07-04
DE60000178T2 DE60000178T2 (de) 2003-01-30

Family

ID=26815079

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60000178T Expired - Fee Related DE60000178T2 (de) 1999-01-26 2000-01-19 Oberflächenemittierender Vielfachlaser mit vertikalem Resonator und Herstellungsverfahren

Country Status (5)

Country Link
US (1) US6560262B1 (de)
EP (1) EP1030420B1 (de)
JP (1) JP2000223792A (de)
KR (1) KR20000053620A (de)
DE (1) DE60000178T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2363901A (en) * 2000-06-20 2002-01-09 Mitel Semiconductor Ab An optical emission device having quantum wells
KR100727907B1 (ko) * 2000-07-20 2007-06-14 삼성전자주식회사 다중 파장 표면광 레이저 및 그 제조방법
KR100754156B1 (ko) * 2000-08-23 2007-09-03 삼성전자주식회사 다중 파장 표면광 레이저 및 그 제조방법
US6836321B2 (en) * 2001-06-20 2004-12-28 Lucent Technologies Inc. Testing bottom-emitting VCSELs
US20040255689A1 (en) * 2003-04-03 2004-12-23 Murray Sabrina L. Flow rate test apparatus and method
JP2005150472A (ja) * 2003-11-17 2005-06-09 Alps Electric Co Ltd 波長可変光源及びその製造方法
US20070041416A1 (en) * 2005-08-19 2007-02-22 Koelle Bernhard U Tunable long-wavelength VCSEL system
JP5752814B2 (ja) 2011-03-09 2015-07-22 コーニンクレッカ フィリップス エヌ ヴェ より効率的なｖｃｓｅｌアレイ
CN102820616B (zh) * 2012-08-31 2014-02-12 中国科学院半导体研究所 利用选择区域外延技术制作分布反馈激光器阵列的方法
JP2015103740A (ja) * 2013-11-27 2015-06-04 キヤノン株式会社 面発光レーザ、およびそれを用いた光干渉断層計
US10761195B2 (en) 2016-04-22 2020-09-01 OPSYS Tech Ltd. Multi-wavelength LIDAR system
CN110402398B (zh) 2017-03-13 2023-12-01 欧普赛斯技术有限公司 眼睛安全的扫描激光雷达系统
WO2019022941A1 (en) 2017-07-28 2019-01-31 OPSYS Tech Ltd. VCSEL LIDAR TRANSMITTER WITH LOW ANGULAR DIVERGENCE
CN107887790A (zh) * 2017-09-27 2018-04-06 华东师范大学 一种多波长GaN基非对称量子阱面发射激光器及其制备方法
KR102634870B1 (ko) 2017-11-15 2024-02-13 옵시스 테크 엘티디 잡음 적응형 솔리드-스테이트 lidar 시스템
EP3775979B1 (de) 2018-04-01 2024-01-17 Opsys Tech Ltd. Rauschadaptives festkörper-lidar-system
JP6650961B2 (ja) * 2018-04-25 2020-02-19 キヤノン株式会社 面発光レーザ、およびそれを用いた光干渉断層計
CN112119481A (zh) 2018-05-11 2020-12-22 加利福尼亚大学董事会 磷砷化镓包覆材料在砷化镓衬底上的外延生长
JP2022526998A (ja) 2019-04-09 2022-05-27 オプシス テック リミテッド レーザ制御を伴うソリッドステートｌｉｄａｒ送光機
US11846728B2 (en) 2019-05-30 2023-12-19 OPSYS Tech Ltd. Eye-safe long-range LIDAR system using actuator

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5963568A (en) 1996-07-01 1999-10-05 Xerox Corporation Multiple wavelength, surface emitting laser with broad bandwidth distributed Bragg reflectors
US5960024A (en) * 1998-03-30 1999-09-28 Bandwidth Unlimited, Inc. Vertical optical cavities produced with selective area epitaxy

Also Published As

Publication number Publication date
KR20000053620A (ko) 2000-08-25
US6560262B1 (en) 2003-05-06
EP1030420B1 (de) 2002-05-29
DE60000178T2 (de) 2003-01-30
EP1030420A1 (de) 2000-08-23
JP2000223792A (ja) 2000-08-11

Similar Documents

Publication Publication Date Title
DE69809482D1 (de) Langwelliger, oberflächenemittierender Laser mit vertikalem Resonator und Herstellungsverfahren
DE60000178T2 (de) Oberflächenemittierender Vielfachlaser mit vertikalem Resonator und Herstellungsverfahren
DE60128970D1 (de) Oberflächenemittierender Laser mit vertikalem Resonator und eingebauter Mikrolinse
DE60002264D1 (de) Laserresonator mit doppelkavität
DE69808342D1 (de) Laser mit externem resonator
DE69830463D1 (de) Oberflächenemittierender Laser mit vertikalem Resonator und getrennten optischen Leitern und Stromleitern
DE69412968T2 (de) Oberflächenemittierender laser mit vertikalem Resonator und sein Herstellungsverfahren
DE69610598D1 (de) Langwelliger,oberflächenemittierender laser mit vertikalem resonator und integrierter,vertikaler optischer pumpquelle
DE69523100D1 (de) Oberflaechenemittierender laser und herstellungsverfahren
DE60045301D1 (de) Wärmeleitfähige Form und Herstellungsverfahren dafür
DE69813655T2 (de) Hochleistungsoberflächenemittierender Laser mit vertikalem Resonator und Herstellungsverfahren
DE60020737D1 (de) Sic-einkristall und herstellungsverfahren dafür
DE69708247D1 (de) Laserdiodenanordnung und Herstellungsverfahren
DE69621719D1 (de) Kurzwelliger, oberflächenemittierender Laser mit vertikalem Resonator und Al-freiem aktiven Gebiet
DE60115752D1 (de) Halbleiterlaser mit verbesserter Lichtbegrenzung und Herstellungsverfahren
DE69801342T2 (de) Halbleiterlaser und dazugehöriges Herstellungsverfahren
DE60012592D1 (de) Halbleiterlaser und zugehöriges Herstellungsverfahren
DE59805493D1 (de) Laserresonator
DE69834860D1 (de) Oberflächenemittierender Halbleiterlaser mit ringförmigem Resonator
DE69829552D1 (de) Oberflächenemittierender laser und dessen herstellungsverfahren
DE60116912D1 (de) Abstimmbare Fabry-Perot-Filter und Laser mit reduziertem Frequenzrauschen
DE69732052D1 (de) Filamentierter oberflachenemittierender multiwellenlängenlaser mit vertikalem resonator und herstellungsverfahren
DE60037219D1 (de) Optischer Faserkoppler, Herstellungsverfahren dafür und optischer Verstärker mit diesem Faserkoppler
DE60139434D1 (de) Laserresonator
NO20021870D0 (no) Infraröd laser med overflatekatalysator

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee