DE69412968T2 - Oberflächenemittierender laser mit vertikalem Resonator und sein Herstellungsverfahren - Google Patents

Oberflächenemittierender laser mit vertikalem Resonator und sein Herstellungsverfahren

Info

Publication number
DE69412968T2
DE69412968T2 DE69412968T DE69412968T DE69412968T2 DE 69412968 T2 DE69412968 T2 DE 69412968T2 DE 69412968 T DE69412968 T DE 69412968T DE 69412968 T DE69412968 T DE 69412968T DE 69412968 T2 DE69412968 T2 DE 69412968T2
Authority
DE
Germany
Prior art keywords
manufacturing
emitting laser
surface emitting
cavity surface
vertical cavity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69412968T
Other languages
English (en)
Other versions
DE69412968D1 (de
Inventor
Michael S Lebby
Chan-Long Shieh
Kenneth L Davis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Finisar Corp
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE69412968D1 publication Critical patent/DE69412968D1/de
Application granted granted Critical
Publication of DE69412968T2 publication Critical patent/DE69412968T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3732—Diamonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H01S5/02484—Sapphire or diamond heat spreaders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69412968T 1993-11-15 1994-11-07 Oberflächenemittierender laser mit vertikalem Resonator und sein Herstellungsverfahren Expired - Lifetime DE69412968T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/151,634 US5422901A (en) 1993-11-15 1993-11-15 Semiconductor device with high heat conductivity

Publications (2)

Publication Number Publication Date
DE69412968D1 DE69412968D1 (de) 1998-10-08
DE69412968T2 true DE69412968T2 (de) 1999-04-22

Family

ID=22539602

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69412968T Expired - Lifetime DE69412968T2 (de) 1993-11-15 1994-11-07 Oberflächenemittierender laser mit vertikalem Resonator und sein Herstellungsverfahren

Country Status (5)

Country Link
US (2) US5422901A (de)
EP (1) EP0653823B1 (de)
JP (1) JPH07183615A (de)
DE (1) DE69412968T2 (de)
TW (1) TW296475B (de)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5615224A (en) * 1995-01-04 1997-03-25 The Regents Of The University Of California Apparatus and method for stabilization of the bandgap and associated properties of semiconductor electronic and optoelectronic devices
US5654228A (en) * 1995-03-17 1997-08-05 Motorola VCSEL having a self-aligned heat sink and method of making
US5596595A (en) * 1995-06-08 1997-01-21 Hewlett-Packard Company Current and heat spreading transparent layers for surface-emitting lasers
JPH0997946A (ja) * 1995-07-21 1997-04-08 Matsushita Electric Ind Co Ltd 半導体レーザ及びその製造方法
US5914973A (en) * 1997-02-10 1999-06-22 Motorola, Inc. Vertical cavity surface emitting laser for high power operation and method of fabrication
US6396864B1 (en) 1998-03-13 2002-05-28 Jds Uniphase Corporation Thermally conductive coatings for light emitting devices
US6922426B2 (en) 2001-12-20 2005-07-26 Finisar Corporation Vertical cavity surface emitting laser including indium in the active region
US7167495B2 (en) 1998-12-21 2007-01-23 Finisar Corporation Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
US20030219917A1 (en) * 1998-12-21 2003-11-27 Johnson Ralph H. System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers
US7058112B2 (en) 2001-12-27 2006-06-06 Finisar Corporation Indium free vertical cavity surface emitting laser
US7257143B2 (en) * 1998-12-21 2007-08-14 Finisar Corporation Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
US7435660B2 (en) * 1998-12-21 2008-10-14 Finisar Corporation Migration enhanced epitaxy fabrication of active regions having quantum wells
US6975660B2 (en) 2001-12-27 2005-12-13 Finisar Corporation Vertical cavity surface emitting laser including indium and antimony in the active region
US7095770B2 (en) 2001-12-20 2006-08-22 Finisar Corporation Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region
US7408964B2 (en) 2001-12-20 2008-08-05 Finisar Corporation Vertical cavity surface emitting laser including indium and nitrogen in the active region
US7286585B2 (en) * 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
US6185648B1 (en) 1999-03-31 2001-02-06 International Business Machines Printer circuit board for an optoelectric computer system
US6229712B1 (en) 1999-03-31 2001-05-08 International Business Machines Corporation Printed circuit board for coupling surface mounted optoelectric semiconductor devices
US6415070B1 (en) 1999-03-31 2002-07-02 International Business Machines Corporation Method and apparatus for switching optical signals within an optoelectric computer network
US6158118A (en) * 1999-03-31 2000-12-12 International Business Machines Corporation Method and apparatus for aligning surface mounted optoelectric semiconductor devices on a printed circuit board
US6529299B1 (en) 1999-03-31 2003-03-04 International Business Machines Corporation Method and apparatus for broadcasting optical signals within an optoelectric computer network
US6259840B1 (en) 1999-03-31 2001-07-10 International Business Machines Corporation Printed circuit board having fluid-linked optical pathways for coupling surface mounted optoelectric semiconductor devices
US6577658B1 (en) 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
KR100565049B1 (ko) * 1999-10-25 2006-03-30 삼성전자주식회사 표면광 레이저
WO2001037386A1 (fr) * 1999-11-16 2001-05-25 The Furukawa Electric Co., Ltd. Dispositif laser a semi-conducteur a emission par la surface
US6888871B1 (en) * 2000-07-12 2005-05-03 Princeton Optronics, Inc. VCSEL and VCSEL array having integrated microlenses for use in a semiconductor laser pumped solid state laser system
NL1015714C2 (nl) * 2000-07-14 2002-01-15 Dsm Nv Werkwijze voor het kristalliseren van enantiomeer verrijkt 2-acetylthio-3-fenylpropaanzuur.
US6810064B1 (en) 2000-08-22 2004-10-26 The Regents Of The University Of California Heat spreading layers for vertical cavity surface emitting lasers
US6631154B2 (en) 2000-08-22 2003-10-07 The Regents Of The University Of California Method of fabricating a distributed Bragg reflector having enhanced thermal and electrical properties
US6653158B2 (en) * 2000-08-22 2003-11-25 The Regents Of The University Of California Double intracavity contacted long-wavelength VCSELs and method of fabricating same
US6905900B1 (en) * 2000-11-28 2005-06-14 Finisar Corporation Versatile method and system for single mode VCSELs
US6720585B1 (en) 2001-01-16 2004-04-13 Optical Communication Products, Inc. Low thermal impedance DBR for optoelectronic devices
DE10147888A1 (de) * 2001-09-28 2003-04-24 Osram Opto Semiconductors Gmbh Optisch gepumpter vertikal emittierender Halbleiterlaser
WO2003063312A1 (fr) * 2002-01-21 2003-07-31 Matsushita Electric Industrial Co., Ltd. Dispositif laser a semi-conducteurs a base de nitrures et son procede de fabrication
US6822995B2 (en) * 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
US7295586B2 (en) * 2002-02-21 2007-11-13 Finisar Corporation Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs
US6807345B2 (en) 2002-05-28 2004-10-19 Agilent Technologies, Inc. Systems and methods for removing heat from opto-electronic components
US6965626B2 (en) * 2002-09-03 2005-11-15 Finisar Corporation Single mode VCSEL
JP4866550B2 (ja) * 2002-12-20 2012-02-01 クリー インコーポレイテッド 自己整合型の半導体メサおよびコンタクト層を有する半導体デバイス、および、該デバイスに関連する構造の形成方法
JP2004207442A (ja) * 2002-12-25 2004-07-22 Mitsubishi Electric Corp 面発光型半導体レーザ素子
FR2857781B1 (fr) * 2003-07-15 2005-09-30 Thales Sa Transistor bipolaire a heterojonction a transfert thermique ameliore
US7033912B2 (en) * 2004-01-22 2006-04-25 Cree, Inc. Silicon carbide on diamond substrates and related devices and methods
US7612390B2 (en) * 2004-02-05 2009-11-03 Cree, Inc. Heterojunction transistors including energy barriers
US20050243881A1 (en) * 2004-04-30 2005-11-03 Hoki Kwon InAlAs having enhanced oxidation rate grown under very low V/III ratio
US7860143B2 (en) * 2004-04-30 2010-12-28 Finisar Corporation Metal-assisted DBRs for thermal management in VCSELs
US7294324B2 (en) * 2004-09-21 2007-11-13 Cree, Inc. Low basal plane dislocation bulk grown SiC wafers
CN101023568A (zh) * 2004-09-22 2007-08-22 奥斯兰姆奥普托半导体有限责任公司 表面发射的半导体激光器装置以及用于制造表面发射的半导体激光器装置的方法
DE102004050371A1 (de) * 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer drahtlosen Kontaktierung
US7860137B2 (en) * 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
WO2006039341A2 (en) * 2004-10-01 2006-04-13 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
JP4708417B2 (ja) * 2005-03-04 2011-06-22 富士通株式会社 光半導体装置とその製造方法
US7422634B2 (en) * 2005-04-07 2008-09-09 Cree, Inc. Three inch silicon carbide wafer with low warp, bow, and TTV
US20070035930A1 (en) * 2005-08-10 2007-02-15 Chien-Min Sung Methods and devices for cooling printed circuit boards
JP4876480B2 (ja) * 2005-08-18 2012-02-15 富士ゼロックス株式会社 面発光型半導体レーザアレイ
KR20070052059A (ko) * 2005-11-16 2007-05-21 삼성전자주식회사 펌프 빔의 재활용이 가능한 외부 공진기형 면발광 레이저
JP4548329B2 (ja) * 2005-12-19 2010-09-22 セイコーエプソン株式会社 面発光型半導体レーザ
JP4605024B2 (ja) * 2006-01-12 2011-01-05 セイコーエプソン株式会社 面発光型半導体レーザ
JP4548345B2 (ja) 2006-01-12 2010-09-22 セイコーエプソン株式会社 面発光型半導体レーザ
WO2007084501A2 (en) * 2006-01-13 2007-07-26 Group4 Labs, Llc Method for manufacturing smooth diamond heat sinks
US7592211B2 (en) 2006-01-17 2009-09-22 Cree, Inc. Methods of fabricating transistors including supported gate electrodes
US7709269B2 (en) * 2006-01-17 2010-05-04 Cree, Inc. Methods of fabricating transistors including dielectrically-supported gate electrodes
WO2008051187A1 (en) * 2006-08-11 2008-05-02 Kinik Company Methods and devices for cooling printed circuit boards
US20080048192A1 (en) * 2006-08-22 2008-02-28 Chien-Min Sung LED devices and associated methods
US8236594B2 (en) * 2006-10-20 2012-08-07 Chien-Min Sung Semiconductor-on-diamond devices and associated methods
US20080144291A1 (en) * 2006-12-13 2008-06-19 Shao Chung Hu Methods and devices for cooling printed circuit boards
US8395318B2 (en) 2007-02-14 2013-03-12 Ritedia Corporation Diamond insulated circuits and associated methods
US8110846B2 (en) * 2007-05-31 2012-02-07 Chien-Min Sung Diamond semiconductor devices and associated methods
US8421128B2 (en) * 2007-12-19 2013-04-16 International Business Machines Corporation Semiconductor device heat dissipation structure
DE102008022793B4 (de) * 2008-05-08 2010-12-16 Universität Ulm Vollständig selbstjustierter oberflächenemittierender Halbleiterlaser für die Oberflächenmontage mit optimierten Eigenschaften
TW201133945A (en) * 2010-01-12 2011-10-01 jian-min Song Diamond LED devices and associated methods
US9246305B1 (en) * 2014-03-20 2016-01-26 The United States Of America, As Represented By The Secretary Of The Navy Light-emitting devices with integrated diamond
PT3219360T (pt) * 2014-11-10 2020-07-13 Sanhe Laserconn Tech Co Ltd Dispositivo de tratamento a laser vcsel de alta potência com função de arrefecimento de pele e sua estrutura de empacotamento
DE102016125430A1 (de) * 2016-12-22 2018-06-28 Osram Opto Semiconductors Gmbh Oberflächenmontierbarer Halbleiterlaser, Anordnung mit einem solchen Halbleiterlaser und Betriebsverfahren hierfür
GB201811873D0 (en) 2018-07-20 2018-09-05 Oxford Instruments Nanotechnology Tools Ltd Semiconductor etching methods
CN112234434A (zh) * 2019-07-15 2021-01-15 太平洋(聊城)光电科技股份有限公司 微透镜芯片

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62194652A (ja) * 1986-02-21 1987-08-27 Hitachi Ltd 半導体装置
JPS63224347A (ja) * 1987-03-13 1988-09-19 Toyo Electric Mfg Co Ltd 半導体装置
US5131963A (en) * 1987-11-16 1992-07-21 Crystallume Silicon on insulator semiconductor composition containing thin synthetic diamone films
EP0327336B1 (de) * 1988-02-01 1997-12-10 Semiconductor Energy Laboratory Co., Ltd. Elektronische Anordnungen mit Kohlenstoffschichten
US5304461A (en) * 1989-01-10 1994-04-19 Kabushiki Kaisha Kobe Seiko Sho Process for the selective deposition of thin diamond film by gas phase synthesis
JPH0318082A (ja) * 1989-06-15 1991-01-25 Fuji Electric Co Ltd 半導体レーザ素子の保護膜
US5038356A (en) * 1989-12-04 1991-08-06 Trw Inc. Vertical-cavity surface-emitting diode laser
US5128006A (en) * 1991-01-23 1992-07-07 At&T Bell Laboratories Deposition of diamond films on semicondutor substrates
DE69231790T2 (de) * 1991-07-01 2002-03-07 Sumitomo Electric Industries Wärmeabführendes Bauteil und damit versehene Halbleitervorrichtung
USH1249H (en) * 1991-07-01 1993-11-02 Machonkin Mary A Coating processes with a polycrystalline diamond passivation layer
US5325384A (en) * 1992-01-09 1994-06-28 Crystallume Structure and method for mounting laser diode arrays
US5212702A (en) * 1992-03-25 1993-05-18 At&T Bell Laboratories Semiconductor surface emitting laser having reduced threshold voltage and enhanced optical output
US5258316A (en) * 1992-03-26 1993-11-02 Motorola, Inc. Patterened mirror vertical cavity surface emitting laser
US5293392A (en) * 1992-07-31 1994-03-08 Motorola, Inc. Top emitting VCSEL with etch stop layer
US5317587A (en) * 1992-08-06 1994-05-31 Motorola, Inc. VCSEL with separate control of current distribution and optical mode
US5358880A (en) * 1993-04-12 1994-10-25 Motorola, Inc. Method of manufacturing closed cavity LED

Also Published As

Publication number Publication date
US5538919A (en) 1996-07-23
EP0653823B1 (de) 1998-09-02
EP0653823A3 (de) 1995-08-30
EP0653823A2 (de) 1995-05-17
TW296475B (de) 1997-01-21
US5422901A (en) 1995-06-06
DE69412968D1 (de) 1998-10-08
JPH07183615A (ja) 1995-07-21

Similar Documents

Publication Publication Date Title
DE69412968D1 (de) Oberflächenemittierender laser mit vertikalem Resonator und sein Herstellungsverfahren
DE69610610D1 (de) Oberflächenemittierender Laser mit vertikalem Resonator und Verfahren zu seiner Herstellung
DE69400042D1 (de) Oberflächenemittierender Laser und dessen Herstellungsverfahren
DE69809482D1 (de) Langwelliger, oberflächenemittierender Laser mit vertikalem Resonator und Herstellungsverfahren
DE69830463D1 (de) Oberflächenemittierender Laser mit vertikalem Resonator und getrennten optischen Leitern und Stromleitern
DE69323433T2 (de) Oberflächenemittierende laser mit vertikalem resonator und darin enthaltenen strukturen
EP0475371A3 (en) Surface emission type semiconductor laser and method of making the same
DE69411280D1 (de) Laser sintern mit mehreren strahlen
DE69828760D1 (de) Herstellungsverfahren eines oberflächenemittierenden Halbleiterlasers mit vertikalem Resonator
DE69408846T2 (de) Slab-laser mit gefalteter resonatorstruktur
DE69523100D1 (de) Oberflaechenemittierender laser und herstellungsverfahren
DE69811553T2 (de) Langwelliger oberflächenemittierender Halbleiterlaser mit vertikalem Resonator (VCSEL)
DE69603776D1 (de) Multischichten Filmstruktur und oberflächenemittierende Laser mit vertikalem Resonator
DE69221860D1 (de) Laser mit externem resonator
DE69708247D1 (de) Laserdiodenanordnung und Herstellungsverfahren
DE60000178T2 (de) Oberflächenemittierender Vielfachlaser mit vertikalem Resonator und Herstellungsverfahren
EP0531542A4 (en) Surface emitting type semiconductor laser and its manufacturing method
DE69401733D1 (de) Halbleiterlaser und dessen Herstellungsverfahren
DE69412666T2 (de) Gewinngekoppelter Halbleiterlaser mit verteilter Rückkoppelung und Herstellungsverfahren
DE69732052D1 (de) Filamentierter oberflachenemittierender multiwellenlängenlaser mit vertikalem resonator und herstellungsverfahren
DE69309011D1 (de) Halbleiterlaser mit optimiertem Resonator
DE69319317T2 (de) Halbleiterlaser und Herstellungsverfahren
EP0987800A4 (de) Oberflächenemittierender laser mit monitor und dessen herstellungsverfahren
DE69400533D1 (de) Halbleiterlaser und Herstellungsverfahren
DE69400459D1 (de) Halbleiterlaser und Herstellungsverfahren

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: SCHUMACHER & WILLSAU, PATENTANWALTSSOZIETAET, 80335 MUENCHEN

8327 Change in the person/name/address of the patent owner

Owner name: FINISAR CORP.(N.D.GES.D.STAATES DELAWARE), SUNNYVA