DE50313254D1 - Reflektives roentgenmikroskop zur untersuchung von objekten mit wellenlaengen = 100nm in reflexion - Google Patents
Reflektives roentgenmikroskop zur untersuchung von objekten mit wellenlaengen = 100nm in reflexionInfo
- Publication number
- DE50313254D1 DE50313254D1 DE50313254T DE50313254T DE50313254D1 DE 50313254 D1 DE50313254 D1 DE 50313254D1 DE 50313254 T DE50313254 T DE 50313254T DE 50313254 T DE50313254 T DE 50313254T DE 50313254 D1 DE50313254 D1 DE 50313254D1
- Authority
- DE
- Germany
- Prior art keywords
- objects
- roentgenic
- reflective
- microscope
- examination
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001393 microlithography Methods 0.000 abstract 2
- 230000003287 optical effect Effects 0.000 abstract 2
- 238000007689 inspection Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K7/00—Gamma- or X-ray microscopes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Lenses (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE50313254T DE50313254D1 (de) | 2002-05-10 | 2003-05-08 | Reflektives roentgenmikroskop zur untersuchung von objekten mit wellenlaengen = 100nm in reflexion |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10220815A DE10220815A1 (de) | 2002-05-10 | 2002-05-10 | Reflektives Röntgenmikroskop und Inspektionssystem zur Untersuchung von Objekten mit Wellenlängen 100 nm |
| DE10220816A DE10220816A1 (de) | 2002-05-10 | 2002-05-10 | Reflektives Röntgenmikroskop und Inspektionssystem zur Untersuchung von Objekten mit Wellenlängen 100 nm |
| PCT/EP2003/004803 WO2003096356A2 (de) | 2002-05-10 | 2003-05-08 | Reflektives röntgenmikroskop und inspektionssystem zur untersuchung von objekten mit wellenlängen ≤ 100nm |
| DE50313254T DE50313254D1 (de) | 2002-05-10 | 2003-05-08 | Reflektives roentgenmikroskop zur untersuchung von objekten mit wellenlaengen = 100nm in reflexion |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE50313254D1 true DE50313254D1 (de) | 2010-12-23 |
Family
ID=29421498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE50313254T Expired - Lifetime DE50313254D1 (de) | 2002-05-10 | 2003-05-08 | Reflektives roentgenmikroskop zur untersuchung von objekten mit wellenlaengen = 100nm in reflexion |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7623620B2 (enExample) |
| EP (2) | EP1446813B1 (enExample) |
| JP (2) | JP4639352B2 (enExample) |
| AT (1) | ATE488013T1 (enExample) |
| AU (1) | AU2003268097A1 (enExample) |
| DE (1) | DE50313254D1 (enExample) |
| WO (1) | WO2003096356A2 (enExample) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7351980B2 (en) * | 2005-03-31 | 2008-04-01 | Kla-Tencor Technologies Corp. | All-reflective optical systems for broadband wafer inspection |
| WO2007020004A1 (de) * | 2005-08-17 | 2007-02-22 | Carl Zeiss Smt Ag | Projektionsobjektiv und verfahren zur optimierung einer systemblende eines projektionsobjektivs |
| US7564564B2 (en) * | 2006-08-22 | 2009-07-21 | Artium Technologies, Inc. | Automatic set-up for instrument functions |
| DE102006044202A1 (de) * | 2006-09-15 | 2008-05-21 | Fahrzeugwerk Bernard Krone Gmbh | Dolly-Achse |
| US20080144167A1 (en) * | 2006-12-13 | 2008-06-19 | General Electric Company | Optical imaging system and method for high speed and high resolution |
| DE102007062198A1 (de) | 2007-12-21 | 2009-06-25 | Carl Zeiss Microimaging Gmbh | Katoptrisches Objektiv zur Abbildung eines im Wesentlichen linienförmigen Objektes |
| DE102008015996A1 (de) * | 2008-03-27 | 2009-10-01 | Carl Zeiss Sms Gmbh | Mikroskop und Mikroskopierverfahren zur Untersuchung eines reflektierenden Objektes |
| KR101535230B1 (ko) * | 2009-06-03 | 2015-07-09 | 삼성전자주식회사 | Euv 마스크용 공간 영상 측정 장치 및 방법 |
| JP6211270B2 (ja) * | 2009-06-19 | 2017-10-11 | ケーエルエー−テンカー・コーポレーションKla−Tencor Corporation | 極紫外線マスクブランクの欠陥検出のための検査システム及び方法 |
| WO2010148293A2 (en) | 2009-06-19 | 2010-12-23 | Kla-Tencor Corporation | Euv high throughput inspection system for defect detection on patterned euv masks, mask blanks, and wafers |
| NL2004949A (en) * | 2009-08-21 | 2011-02-22 | Asml Netherlands Bv | Inspection method and apparatus. |
| DE102010009022B4 (de) | 2010-02-22 | 2019-10-24 | Carl Zeiss Smt Gmbh | Beleuchtungssystem sowie Projektionsobjektiv einer Maskeninspektionsanlage |
| DE102010029049B4 (de) | 2010-05-18 | 2014-03-13 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für ein Metrologiesystem für die Untersuchung eines Objekts mit EUV-Beleuchtungslicht sowie Metrologiesystem mit einer derartigen Beleuchtungsoptik |
| DE102010025033B4 (de) * | 2010-06-23 | 2021-02-11 | Carl Zeiss Smt Gmbh | Verfahren zur Defekterkennung und Reparatur von EUV-Masken |
| DE102010047050B4 (de) | 2010-09-29 | 2021-09-16 | Carl Zeiss Smt Gmbh | Verfahren zur Charakterisierung einer Struktur auf einer Maske und Vorrichtung zur Durchführung des Verfahrens |
| US8837041B2 (en) * | 2010-11-23 | 2014-09-16 | Carl Zeiss Smt Gmbh | Magnifying imaging optical system and metrology system with an imaging optical system of this type |
| JP4761588B1 (ja) * | 2010-12-01 | 2011-08-31 | レーザーテック株式会社 | Euvマスク検査装置 |
| US8842272B2 (en) | 2011-01-11 | 2014-09-23 | Kla-Tencor Corporation | Apparatus for EUV imaging and methods of using same |
| DE102011003302A1 (de) | 2011-01-28 | 2012-08-02 | Carl Zeiss Smt Gmbh | Vergrößerte abbildende Optik sowie Metrologiesystem mit einer derartigen abbildenden Optik |
| DE102011005881A1 (de) | 2011-03-22 | 2012-05-03 | Carl Zeiss Smt Gmbh | Verfahren zur Einstellung eines Beleuchtungssystems einer Projektionsbelichtungsanlage für die Projektionslithographie |
| DE102011079382B4 (de) | 2011-07-19 | 2020-11-12 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum Analysieren und zum Beseitigen eines Defekts einer EUV Maske |
| DE102013204445A1 (de) * | 2013-03-14 | 2014-09-18 | Carl Zeiss Smt Gmbh | Vergrößernde abbildende Optik sowie EUV-Maskeninspektionssystem mit einer derartigen abbildenden Optik |
| DE102013212613B4 (de) | 2013-06-28 | 2015-07-23 | Carl Zeiss Sms Gmbh | Beleuchtungsoptik für ein Metrologiesystem sowie Metrologiesystem mit einer derartigen Beleuchtungsoptik |
| DE102014219755A1 (de) | 2013-10-30 | 2015-04-30 | Carl Zeiss Smt Gmbh | Reflektives optisches Element |
| CN106030405B (zh) * | 2014-02-21 | 2020-11-03 | 保罗·谢勒学院 | 使用相干衍射成像方法以及使用微型小孔和孔系统的反射模式的成像系统 |
| EP3518041A1 (en) * | 2018-01-30 | 2019-07-31 | ASML Netherlands B.V. | Inspection apparatus and inspection method |
| JP2020173296A (ja) * | 2019-04-08 | 2020-10-22 | 株式会社ニューフレアテクノロジー | Euvマスクのパターン検査装置及びeuvマスクのパターン検査方法 |
| JP7484078B2 (ja) * | 2019-05-10 | 2024-05-16 | 日亜化学工業株式会社 | 画像表示装置の製造方法および画像表示装置 |
| DE102023204172A1 (de) * | 2023-05-05 | 2024-11-07 | Carl Zeiss Smt Gmbh | Optisches System für ein Metrologiesystem sowie Metrologiesystem mit einem derartigen optischen System |
| DE102023129681A1 (de) * | 2023-10-27 | 2025-04-30 | Carl Zeiss Smt Gmbh | Verfahren und Steuervorrichtung zum Analysieren eines Bildes eines Rohlings einer Photomaske für die Mikrolithographie |
| DE102024203890A1 (de) | 2024-04-25 | 2025-10-30 | Carl Zeiss Smt Gmbh | Verfahren zur hochgenauen Lagebestimmung einer Struktur |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS612124A (ja) * | 1984-06-14 | 1986-01-08 | Canon Inc | 結像光学系 |
| JP2603225B2 (ja) * | 1986-07-11 | 1997-04-23 | キヤノン株式会社 | X線投影露光装置及び半導体製造方法 |
| EP0252734B1 (en) * | 1986-07-11 | 2000-05-03 | Canon Kabushiki Kaisha | X-ray reduction projection exposure system of reflection type |
| US4912737A (en) | 1987-10-30 | 1990-03-27 | Hamamatsu Photonics K.K. | X-ray image observing device |
| JPH02210299A (ja) * | 1989-02-10 | 1990-08-21 | Olympus Optical Co Ltd | X線用光学系及びそれに用いる多層膜反射鏡 |
| JPH0782117B2 (ja) * | 1989-02-23 | 1995-09-06 | オリンパス光学工業株式会社 | 反射型結像光学系 |
| JP2865257B2 (ja) * | 1989-03-07 | 1999-03-08 | オリンパス光学工業株式会社 | シュヴアルツシルド光学系 |
| US5063586A (en) * | 1989-10-13 | 1991-11-05 | At&T Bell Laboratories | Apparatus for semiconductor lithography |
| JP2945431B2 (ja) * | 1990-03-01 | 1999-09-06 | オリンパス光学工業株式会社 | 結像型x線顕微鏡 |
| JP2921038B2 (ja) | 1990-06-01 | 1999-07-19 | キヤノン株式会社 | X線を用いた観察装置 |
| DE4027285A1 (de) * | 1990-08-29 | 1992-03-05 | Zeiss Carl Fa | Roentgenmikroskop |
| US5291339A (en) * | 1990-11-30 | 1994-03-01 | Olympus Optical Co., Ltd. | Schwarzschild optical system |
| JPH04321047A (ja) | 1991-01-21 | 1992-11-11 | Nikon Corp | フォトマスク検査装置及びフォトマスク検査方法 |
| JPH04353800A (ja) * | 1991-05-31 | 1992-12-08 | Olympus Optical Co Ltd | 軟x線顕微鏡 |
| US5177774A (en) * | 1991-08-23 | 1993-01-05 | Trustees Of Princeton University | Reflection soft X-ray microscope and method |
| JPH06237016A (ja) * | 1993-02-09 | 1994-08-23 | Matsushita Electric Ind Co Ltd | 光ファイバモジュールおよびその製造方法 |
| JPH0728226A (ja) | 1993-04-30 | 1995-01-31 | Internatl Business Mach Corp <Ibm> | 領域的イメージを測定する装置及び方法 |
| JP3336361B2 (ja) * | 1993-06-11 | 2002-10-21 | 株式会社ニコン | 縮小投影露光用反射型x線マスクの検査装置および検査方法 |
| US6438199B1 (en) | 1998-05-05 | 2002-08-20 | Carl-Zeiss-Stiftung | Illumination system particularly for microlithography |
| DE19923609A1 (de) * | 1998-05-30 | 1999-12-02 | Zeiss Carl Fa | Ringfeld-4-Spiegelsysteme mit konvexem Primärspiegel für die EUV-Lithographie |
| US6328482B1 (en) * | 1998-06-08 | 2001-12-11 | Benjamin Bin Jian | Multilayer optical fiber coupler |
| JP4374735B2 (ja) * | 1999-08-11 | 2009-12-02 | 株式会社ニコン | 反射型軟x線顕微鏡、マスク検査装置及び反射マスクの製造方法 |
| EP1126477A3 (de) * | 2000-02-14 | 2003-06-18 | Leica Microsystems Lithography GmbH | Verfahren zur Untersuchung von Strukturen auf einem Halbleiter-Substrat |
| JP2002329473A (ja) * | 2001-02-27 | 2002-11-15 | Jeol Ltd | X線分光器を備えた透過型電子顕微鏡 |
| DE10319269A1 (de) * | 2003-04-25 | 2004-11-25 | Carl Zeiss Sms Gmbh | Abbildungssystem für ein, auf extrem ultravioletter (EUV) Strahlung basierendem Mikroskop |
-
2003
- 2003-05-08 EP EP03740130A patent/EP1446813B1/de not_active Expired - Lifetime
- 2003-05-08 EP EP04013866.1A patent/EP1455365A3/de not_active Withdrawn
- 2003-05-08 AT AT03740130T patent/ATE488013T1/de active
- 2003-05-08 JP JP2004504243A patent/JP4639352B2/ja not_active Expired - Lifetime
- 2003-05-08 DE DE50313254T patent/DE50313254D1/de not_active Expired - Lifetime
- 2003-05-08 WO PCT/EP2003/004803 patent/WO2003096356A2/de not_active Ceased
- 2003-05-08 AU AU2003268097A patent/AU2003268097A1/en not_active Abandoned
-
2004
- 2004-11-08 US US10/983,362 patent/US7623620B2/en not_active Expired - Lifetime
-
2009
- 2009-11-09 JP JP2009255986A patent/JP2010032542A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US7623620B2 (en) | 2009-11-24 |
| EP1455365A2 (de) | 2004-09-08 |
| EP1455365A3 (de) | 2014-12-17 |
| ATE488013T1 (de) | 2010-11-15 |
| EP1446813A2 (de) | 2004-08-18 |
| US20050201514A1 (en) | 2005-09-15 |
| WO2003096356A3 (de) | 2004-05-21 |
| JP2005525565A (ja) | 2005-08-25 |
| WO2003096356A2 (de) | 2003-11-20 |
| EP1446813B1 (de) | 2010-11-10 |
| AU2003268097A8 (en) | 2003-11-11 |
| AU2003268097A1 (en) | 2003-11-11 |
| JP4639352B2 (ja) | 2011-02-23 |
| JP2010032542A (ja) | 2010-02-12 |
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