JP4639352B2 - 波長≦１００ｎｍで物体を検査する検査系 - Google Patents

波長≦１００ｎｍで物体を検査する検査系 Download PDF

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Publication number
JP4639352B2
JP4639352B2 JP2004504243A JP2004504243A JP4639352B2 JP 4639352 B2 JP4639352 B2 JP 4639352B2 JP 2004504243 A JP2004504243 A JP 2004504243A JP 2004504243 A JP2004504243 A JP 2004504243A JP 4639352 B2 JP4639352 B2 JP 4639352B2
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mirror
plane
image
mask
imaging
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JP2005525565A (ja
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ハンス−ユルゲン マン，
ウド ディンガー，
ヴィルヘルム ウルリヒ，
ヴォルフガング ライネケ，
トーマス エンゲル，
アクセル ジボルド，
ヴォルフガング ハルニッシュ，
マルコ ベドウスキー，
ディーター パオシンガー，
Original Assignee
カール・ツァイス・エスエムティー・ゲーエムベーハー
カール ツァイス エスエムエス ゲーエムベーハー
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Priority claimed from DE10220815A external-priority patent/DE10220815A1/de
Priority claimed from DE10220816A external-priority patent/DE10220816A1/de
Application filed by カール・ツァイス・エスエムティー・ゲーエムベーハー, カール ツァイス エスエムエス ゲーエムベーハー filed Critical カール・ツァイス・エスエムティー・ゲーエムベーハー
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    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K7/00—Gamma- or X-ray microscopes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
JP2004504243A 2002-05-10 2003-05-08 波長≦１００ｎｍで物体を検査する検査系 Expired - Lifetime JP4639352B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10220815A DE10220815A1 (de) 2002-05-10 2002-05-10 Reflektives Röntgenmikroskop und Inspektionssystem zur Untersuchung von Objekten mit Wellenlängen 100 nm
DE10220816A DE10220816A1 (de) 2002-05-10 2002-05-10 Reflektives Röntgenmikroskop und Inspektionssystem zur Untersuchung von Objekten mit Wellenlängen 100 nm
PCT/EP2003/004803 WO2003096356A2 (de) 2002-05-10 2003-05-08 Reflektives röntgenmikroskop und inspektionssystem zur untersuchung von objekten mit wellenlängen ≤ 100nm

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JP2009255986A Division JP2010032542A (ja) 2002-05-10 2009-11-09 波長≦１００ｎｍで物体を検査する反射型Ｘ線顕微鏡および検査系

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JP2005525565A JP2005525565A (ja) 2005-08-25
JP4639352B2 true JP4639352B2 (ja) 2011-02-23

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US (1) US7623620B2 (enExample)
EP (2) EP1446813B1 (enExample)
JP (2) JP4639352B2 (enExample)
AT (1) ATE488013T1 (enExample)
AU (1) AU2003268097A1 (enExample)
DE (1) DE50313254D1 (enExample)
WO (1) WO2003096356A2 (enExample)

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JP6211270B2 (ja) * 2009-06-19 2017-10-11 ケーエルエー−テンカー・コーポレーションＫｌａ−Ｔｅｎｃｏｒ Ｃｏｒｐｏｒａｔｉｏｎ 極紫外線マスクブランクの欠陥検出のための検査システム及び方法
WO2010148293A2 (en) 2009-06-19 2010-12-23 Kla-Tencor Corporation Euv high throughput inspection system for defect detection on patterned euv masks, mask blanks, and wafers
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DE102010009022B4 (de) 2010-02-22 2019-10-24 Carl Zeiss Smt Gmbh Beleuchtungssystem sowie Projektionsobjektiv einer Maskeninspektionsanlage
DE102010029049B4 (de) 2010-05-18 2014-03-13 Carl Zeiss Smt Gmbh Beleuchtungsoptik für ein Metrologiesystem für die Untersuchung eines Objekts mit EUV-Beleuchtungslicht sowie Metrologiesystem mit einer derartigen Beleuchtungsoptik
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DE102011003302A1 (de) 2011-01-28 2012-08-02 Carl Zeiss Smt Gmbh Vergrößerte abbildende Optik sowie Metrologiesystem mit einer derartigen abbildenden Optik
DE102011005881A1 (de) 2011-03-22 2012-05-03 Carl Zeiss Smt Gmbh Verfahren zur Einstellung eines Beleuchtungssystems einer Projektionsbelichtungsanlage für die Projektionslithographie
DE102011079382B4 (de) 2011-07-19 2020-11-12 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum Analysieren und zum Beseitigen eines Defekts einer EUV Maske
DE102013204445A1 (de) * 2013-03-14 2014-09-18 Carl Zeiss Smt Gmbh Vergrößernde abbildende Optik sowie EUV-Maskeninspektionssystem mit einer derartigen abbildenden Optik
DE102013212613B4 (de) 2013-06-28 2015-07-23 Carl Zeiss Sms Gmbh Beleuchtungsoptik für ein Metrologiesystem sowie Metrologiesystem mit einer derartigen Beleuchtungsoptik
DE102014219755A1 (de) 2013-10-30 2015-04-30 Carl Zeiss Smt Gmbh Reflektives optisches Element
CN106030405B (zh) * 2014-02-21 2020-11-03 保罗·谢勒学院 使用相干衍射成像方法以及使用微型小孔和孔系统的反射模式的成像系统
EP3518041A1 (en) * 2018-01-30 2019-07-31 ASML Netherlands B.V. Inspection apparatus and inspection method
JP2020173296A (ja) * 2019-04-08 2020-10-22 株式会社ニューフレアテクノロジー Ｅｕｖマスクのパターン検査装置及びｅｕｖマスクのパターン検査方法
JP7484078B2 (ja) * 2019-05-10 2024-05-16 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
DE102023204172A1 (de) * 2023-05-05 2024-11-07 Carl Zeiss Smt Gmbh Optisches System für ein Metrologiesystem sowie Metrologiesystem mit einem derartigen optischen System
DE102023129681A1 (de) * 2023-10-27 2025-04-30 Carl Zeiss Smt Gmbh Verfahren und Steuervorrichtung zum Analysieren eines Bildes eines Rohlings einer Photomaske für die Mikrolithographie
DE102024203890A1 (de) 2024-04-25 2025-10-30 Carl Zeiss Smt Gmbh Verfahren zur hochgenauen Lagebestimmung einer Struktur

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Publication number Publication date
US7623620B2 (en) 2009-11-24
EP1455365A2 (de) 2004-09-08
EP1455365A3 (de) 2014-12-17
ATE488013T1 (de) 2010-11-15
EP1446813A2 (de) 2004-08-18
US20050201514A1 (en) 2005-09-15
WO2003096356A3 (de) 2004-05-21
JP2005525565A (ja) 2005-08-25
WO2003096356A2 (de) 2003-11-20
EP1446813B1 (de) 2010-11-10
AU2003268097A8 (en) 2003-11-11
AU2003268097A1 (en) 2003-11-11
DE50313254D1 (de) 2010-12-23
JP2010032542A (ja) 2010-02-12

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