DE4215210C2 - Herstellungsverfahren für eine Phasenverschiebungsmaske - Google Patents

Herstellungsverfahren für eine Phasenverschiebungsmaske

Info

Publication number
DE4215210C2
DE4215210C2 DE4215210A DE4215210A DE4215210C2 DE 4215210 C2 DE4215210 C2 DE 4215210C2 DE 4215210 A DE4215210 A DE 4215210A DE 4215210 A DE4215210 A DE 4215210A DE 4215210 C2 DE4215210 C2 DE 4215210C2
Authority
DE
Germany
Prior art keywords
layer
phase shift
light shielding
mask
shift mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE4215210A
Other languages
German (de)
English (en)
Other versions
DE4215210A1 (de
Inventor
Eun Seop Keum
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Goldstar Electron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Goldstar Electron Co Ltd filed Critical Goldstar Electron Co Ltd
Publication of DE4215210A1 publication Critical patent/DE4215210A1/de
Application granted granted Critical
Publication of DE4215210C2 publication Critical patent/DE4215210C2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE4215210A 1991-05-09 1992-05-08 Herstellungsverfahren für eine Phasenverschiebungsmaske Expired - Fee Related DE4215210C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910007494A KR940005606B1 (ko) 1991-05-09 1991-05-09 측벽 식각을 이용한 위상 반전 마스크 제조방법

Publications (2)

Publication Number Publication Date
DE4215210A1 DE4215210A1 (de) 1992-11-12
DE4215210C2 true DE4215210C2 (de) 1998-02-12

Family

ID=19314244

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4215210A Expired - Fee Related DE4215210C2 (de) 1991-05-09 1992-05-08 Herstellungsverfahren für eine Phasenverschiebungsmaske

Country Status (5)

Country Link
US (1) US5300377A (cg-RX-API-DMAC7.html)
JP (1) JP2887773B2 (cg-RX-API-DMAC7.html)
KR (1) KR940005606B1 (cg-RX-API-DMAC7.html)
DE (1) DE4215210C2 (cg-RX-API-DMAC7.html)
TW (1) TW240323B (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4229157A1 (de) * 1991-09-04 1993-03-11 Micron Technology Inc Verfahren zum verhueten der nullausbildung bei photomasken mit phasenverschiebung

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5465220A (en) * 1992-06-02 1995-11-07 Fujitsu Limited Optical exposure method
US5382483A (en) * 1992-01-13 1995-01-17 International Business Machines Corporation Self-aligned phase-shifting mask
EP0553543B1 (en) * 1992-01-31 1997-12-29 Mitsubishi Denki Kabushiki Kaisha Phase shift mask and method for forming resist pattern using said mask
US5789118A (en) * 1992-08-21 1998-08-04 Intel Corporation Method and apparatus for precision determination of phase-shift in a phase-shifted reticle
KR970005675B1 (en) * 1994-01-19 1997-04-18 Hyundai Electronics Ind Fabrication method of phase shift mask
KR0136630B1 (ko) * 1994-03-21 1998-04-29 김주용 위상반전 마스크 제조방법
US5595843A (en) * 1995-03-30 1997-01-21 Intel Corporation Layout methodology, mask set, and patterning method for phase-shifting lithography
KR0157883B1 (ko) * 1995-05-19 1998-12-15 문정환 위상반전 마스크 및 그 제조방법
KR0186190B1 (en) * 1995-09-25 1999-04-01 Hyundai Micro Electronics Co Phase shift mask and its manufacture
US7282306B2 (en) * 2004-03-26 2007-10-16 Intel Corporation Continuous sloped phase edge architecture fabrication technique using electron or optical beam blur for single phase shift mask ret
US20070012335A1 (en) * 2005-07-18 2007-01-18 Chang Hsiao C Photomask cleaning using vacuum ultraviolet (VUV) light cleaning
US7759023B2 (en) * 2006-12-29 2010-07-20 Sandisk 3D Llc Hybrid mask and method of making same
CN115826348B (zh) * 2023-02-13 2023-10-24 上海传芯半导体有限公司 掩模版及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02248949A (ja) * 1989-03-22 1990-10-04 Toshiba Corp フォトマスク
EP0424963A2 (en) * 1989-10-27 1991-05-02 Sony Corporation Exposure mask
JPH03105344A (ja) * 1989-09-19 1991-05-02 Fujitsu Ltd 光学マスクの製造方法及び光学マスクの修正方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5079113A (en) * 1988-09-29 1992-01-07 Sharp Kabushiki Kaisha Photo-mask
JP2710967B2 (ja) * 1988-11-22 1998-02-10 株式会社日立製作所 集積回路装置の製造方法
JPH0476550A (ja) * 1990-07-18 1992-03-11 Oki Electric Ind Co Ltd ホトマスク及びその製造方法
JP2967150B2 (ja) * 1990-10-31 1999-10-25 ホーヤ株式会社 位相シフトマスク及びその製造方法並びに露光装置
JPH04254855A (ja) * 1991-02-07 1992-09-10 Hitachi Ltd ホトマスクおよびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02248949A (ja) * 1989-03-22 1990-10-04 Toshiba Corp フォトマスク
JPH03105344A (ja) * 1989-09-19 1991-05-02 Fujitsu Ltd 光学マスクの製造方法及び光学マスクの修正方法
EP0424963A2 (en) * 1989-10-27 1991-05-02 Sony Corporation Exposure mask

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4229157A1 (de) * 1991-09-04 1993-03-11 Micron Technology Inc Verfahren zum verhueten der nullausbildung bei photomasken mit phasenverschiebung
DE4229157C2 (de) * 1991-09-04 1999-06-24 Micron Technology Inc Verfahren zum Verhüten der Nullausbildung bei Photomasken mit Phasenverschiebung

Also Published As

Publication number Publication date
JP2887773B2 (ja) 1999-04-26
DE4215210A1 (de) 1992-11-12
KR940005606B1 (ko) 1994-06-21
TW240323B (cg-RX-API-DMAC7.html) 1995-02-11
JPH06222547A (ja) 1994-08-12
US5300377A (en) 1994-04-05

Similar Documents

Publication Publication Date Title
DE4215210C2 (de) Herstellungsverfahren für eine Phasenverschiebungsmaske
EP0451307B1 (de) Phasenmaske für die Projektionsphotolithographie und Verfahren zu deren Herstellung
DE19525745B4 (de) Verfahren zur Bildung eines Abdeckungsmusters
DE69233449T2 (de) Musterbelichtungsverfahren mit Phasenverschiebung und Maske dafür
DE69328220T2 (de) Verfahren zur Herstellung einer Phasenschiebermaske oder eines Phasenschiebermasken-Rohlings
DE69119181T2 (de) Verfahren zur Herstellung eines Filters
DE69303585T2 (de) Verfahren zur Herstellung eines Motivs
DE69125195T2 (de) Phasenverschiebungsmaske und Verfahren zur Herstellung
DE4413821B4 (de) Phasenschiebemaske und Verfahren zu deren Herstellung
DE4236609A1 (de) Verfahren zur Erzeugung einer Struktur in der Oberfläche eines Substrats
DE69131173T2 (de) Optische Phasenmaske und Verfahren zur Herstellung
DE19802369B4 (de) Phasenschiebe-Photomasken-Herstellungsverfahren
DE69227556T2 (de) Photomaske und Verfahren zur Herstellung
DE19957542A1 (de) Alternierende Phasenmaske
DE19648075C2 (de) Phasenschiebemaske und Herstellverfahren für diese
DE69510902T2 (de) Eingebettete Phasenverschiebungsmasken sowie Verfahren zu dessen Herstellung
DE4415136C2 (de) Verfahren zum Herstellen einer Lithographiemaske
DE10252051A1 (de) Fotomaske für eine Außerachsen-Beleuchtung und Verfahren zur Herstellung derselben
DE19740948A1 (de) Phasenschiebemaske und Verfahren zum Herstellen derselben
DE4447264B4 (de) Verfahren zur Herstellung einer Halbton-Phasenverschiebungsmaske
DE19727261B4 (de) Verfahren zum Herstellen einer Phasenschiebemaske
DE19508749C2 (de) Verfahren zur Herstellung einer Phasenverschiebungsmaske
DE19501564C2 (de) Phasenschiebermaske und Verfahren zur Herstellung derselben
DE2835363A1 (de) Verfahren zum uebertragen von strukturen fuer halbleiterschaltungen
DE10156143B4 (de) Verfahren zur Herstellung von photolithographischen Masken

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8128 New person/name/address of the agent

Representative=s name: TAUCHNER, P., DIPL.-CHEM. DR.RER.NAT. HEUNEMANN, D

D2 Grant after examination
8364 No opposition during term of opposition
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20111201