JP2887773B2 - 位相反転マスクの製造方法 - Google Patents

位相反転マスクの製造方法

Info

Publication number
JP2887773B2
JP2887773B2 JP10027992A JP10027992A JP2887773B2 JP 2887773 B2 JP2887773 B2 JP 2887773B2 JP 10027992 A JP10027992 A JP 10027992A JP 10027992 A JP10027992 A JP 10027992A JP 2887773 B2 JP2887773 B2 JP 2887773B2
Authority
JP
Japan
Prior art keywords
film
phase inversion
light
mask
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP10027992A
Other languages
English (en)
Japanese (ja)
Other versions
JPH06222547A (ja
Inventor
ウン・ソプ・クム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ERU JII SEMIKON CO Ltd
Original Assignee
ERU JII SEMIKON CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ERU JII SEMIKON CO Ltd filed Critical ERU JII SEMIKON CO Ltd
Publication of JPH06222547A publication Critical patent/JPH06222547A/ja
Application granted granted Critical
Publication of JP2887773B2 publication Critical patent/JP2887773B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP10027992A 1991-05-09 1992-03-27 位相反転マスクの製造方法 Expired - Fee Related JP2887773B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019910007494A KR940005606B1 (ko) 1991-05-09 1991-05-09 측벽 식각을 이용한 위상 반전 마스크 제조방법
KR7494/1991 1991-05-09

Publications (2)

Publication Number Publication Date
JPH06222547A JPH06222547A (ja) 1994-08-12
JP2887773B2 true JP2887773B2 (ja) 1999-04-26

Family

ID=19314244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10027992A Expired - Fee Related JP2887773B2 (ja) 1991-05-09 1992-03-27 位相反転マスクの製造方法

Country Status (5)

Country Link
US (1) US5300377A (cg-RX-API-DMAC7.html)
JP (1) JP2887773B2 (cg-RX-API-DMAC7.html)
KR (1) KR940005606B1 (cg-RX-API-DMAC7.html)
DE (1) DE4215210C2 (cg-RX-API-DMAC7.html)
TW (1) TW240323B (cg-RX-API-DMAC7.html)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5465220A (en) * 1992-06-02 1995-11-07 Fujitsu Limited Optical exposure method
US5281500A (en) * 1991-09-04 1994-01-25 Micron Technology, Inc. Method of preventing null formation in phase shifted photomasks
US5382483A (en) * 1992-01-13 1995-01-17 International Business Machines Corporation Self-aligned phase-shifting mask
EP0553543B1 (en) * 1992-01-31 1997-12-29 Mitsubishi Denki Kabushiki Kaisha Phase shift mask and method for forming resist pattern using said mask
US5789118A (en) * 1992-08-21 1998-08-04 Intel Corporation Method and apparatus for precision determination of phase-shift in a phase-shifted reticle
KR970005675B1 (en) * 1994-01-19 1997-04-18 Hyundai Electronics Ind Fabrication method of phase shift mask
KR0136630B1 (ko) * 1994-03-21 1998-04-29 김주용 위상반전 마스크 제조방법
US5595843A (en) * 1995-03-30 1997-01-21 Intel Corporation Layout methodology, mask set, and patterning method for phase-shifting lithography
KR0157883B1 (ko) * 1995-05-19 1998-12-15 문정환 위상반전 마스크 및 그 제조방법
KR0186190B1 (en) * 1995-09-25 1999-04-01 Hyundai Micro Electronics Co Phase shift mask and its manufacture
US7282306B2 (en) * 2004-03-26 2007-10-16 Intel Corporation Continuous sloped phase edge architecture fabrication technique using electron or optical beam blur for single phase shift mask ret
US20070012335A1 (en) * 2005-07-18 2007-01-18 Chang Hsiao C Photomask cleaning using vacuum ultraviolet (VUV) light cleaning
US7759023B2 (en) * 2006-12-29 2010-07-20 Sandisk 3D Llc Hybrid mask and method of making same
CN115826348B (zh) * 2023-02-13 2023-10-24 上海传芯半导体有限公司 掩模版及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5079113A (en) * 1988-09-29 1992-01-07 Sharp Kabushiki Kaisha Photo-mask
JP2710967B2 (ja) * 1988-11-22 1998-02-10 株式会社日立製作所 集積回路装置の製造方法
JP2783582B2 (ja) * 1989-03-22 1998-08-06 株式会社東芝 フォトマスク
JP2776912B2 (ja) * 1989-09-19 1998-07-16 富士通株式会社 光学マスクの製造方法及び光学マスクの修正方法
JP2864570B2 (ja) * 1989-10-27 1999-03-03 ソニー株式会社 露光マスク及び露光方法
JPH0476550A (ja) * 1990-07-18 1992-03-11 Oki Electric Ind Co Ltd ホトマスク及びその製造方法
JP2967150B2 (ja) * 1990-10-31 1999-10-25 ホーヤ株式会社 位相シフトマスク及びその製造方法並びに露光装置
JPH04254855A (ja) * 1991-02-07 1992-09-10 Hitachi Ltd ホトマスクおよびその製造方法

Also Published As

Publication number Publication date
DE4215210A1 (de) 1992-11-12
DE4215210C2 (de) 1998-02-12
KR940005606B1 (ko) 1994-06-21
TW240323B (cg-RX-API-DMAC7.html) 1995-02-11
JPH06222547A (ja) 1994-08-12
US5300377A (en) 1994-04-05

Similar Documents

Publication Publication Date Title
JP3311389B2 (ja) 位相シフトフォトマスクにおける無効部分の発生を防止する方法
JP2887773B2 (ja) 位相反転マスクの製造方法
JPH06289594A (ja) 放射感知層のパターン化に使用するレチクルおよび放射感知層をパターン化する方法
JP3359982B2 (ja) 位相反転マスク及びその製造方法
JP3539652B2 (ja) フォトマスクの製造方法
JP2001223156A (ja) フォトリソグラフィによる多層フォトレジストプロセス
US5888678A (en) Mask and simplified method of forming a mask integrating attenuating phase shifting mask patterns and binary mask patterns on the same mask substrate
US6797440B2 (en) Method of forming a rim phase shifting mask and using the rim phase shifting mask to form a semiconductor device
US5902701A (en) Phase shift mask and method for fabricating the same
KR101656456B1 (ko) 하프톤형 위상반전 블랭크 포토마스크와 하프톤형 위상반전 포토마스크 및 그의 제조방법
US8592105B2 (en) Photomasks and methods of fabricating the same
JP2723476B2 (ja) 位相反転マスクの製造方法
US20090202925A1 (en) Photomask defect correction method, photomask manufacturing method, phase shift mask manufacturing method, photomask, phase shift mask, photomask set, and pattern transfer method
KR100886419B1 (ko) 위상시프트 마스크의 제조 방법 및 위상시프트 마스크
JP6456748B2 (ja) フォトマスクの製造方法、フォトマスク及びフラットパネルディスプレイの製造方法
JP2014192312A (ja) 反射型位相シフトマスク及び製造方法
JPH03125150A (ja) マスク及びマスク作製方法
JPH05249649A (ja) フォトマスクおよびその製造方法
JP2942818B2 (ja) 位相シフトマスクの製造方法
JP3998756B2 (ja) 位相反転マスク及びその製造方法
JP2591469B2 (ja) 位相シフトマスクの製造方法
JPH10106971A (ja) 半導体装置の製造方法
US6348288B1 (en) Resolution enhancement method for deep quarter micron technology
JP2814848B2 (ja) 位相シフトマスク及びその製造方法
JPH06148862A (ja) 位相反転マスクの製造方法

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080219

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090219

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100219

Year of fee payment: 11

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100219

Year of fee payment: 11

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110219

Year of fee payment: 12

LAPS Cancellation because of no payment of annual fees