DE4040035A1 - Sehr harter metallischer kohlenstoff - Google Patents
Sehr harter metallischer kohlenstoffInfo
- Publication number
- DE4040035A1 DE4040035A1 DE4040035A DE4040035A DE4040035A1 DE 4040035 A1 DE4040035 A1 DE 4040035A1 DE 4040035 A DE4040035 A DE 4040035A DE 4040035 A DE4040035 A DE 4040035A DE 4040035 A1 DE4040035 A1 DE 4040035A1
- Authority
- DE
- Germany
- Prior art keywords
- carbon
- diamond
- layers
- composition according
- metallic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 64
- 239000010432 diamond Substances 0.000 title claims abstract description 64
- 229910021404 metallic carbon Inorganic materials 0.000 title claims abstract description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title abstract description 74
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 15
- 239000013078 crystal Substances 0.000 claims abstract description 13
- 230000008021 deposition Effects 0.000 claims abstract description 11
- 230000006835 compression Effects 0.000 claims abstract description 6
- 238000007906 compression Methods 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 25
- 239000000203 mixture Substances 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 238000005234 chemical deposition Methods 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 150000001721 carbon Chemical group 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 125000004429 atom Chemical group 0.000 abstract description 13
- 229910002804 graphite Inorganic materials 0.000 description 18
- 239000010439 graphite Substances 0.000 description 18
- 239000000463 material Substances 0.000 description 12
- 230000005284 excitation Effects 0.000 description 8
- 239000012071 phase Substances 0.000 description 7
- 229930195733 hydrocarbon Natural products 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000004215 Carbon black (E152) Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 150000002430 hydrocarbons Chemical class 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 3
- 229910021386 carbon form Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021402 lonsdaleite Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920001197 polyacetylene Polymers 0.000 description 2
- LFULEKSKNZEWOE-UHFFFAOYSA-N propanil Chemical compound CCC(=O)NC1=CC=C(Cl)C(Cl)=C1 LFULEKSKNZEWOE-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000003251 chemically resistant material Substances 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- LVTJOONKWUXEFR-FZRMHRINSA-N protoneodioscin Natural products O(C[C@@H](CC[C@]1(O)[C@H](C)[C@@H]2[C@]3(C)[C@H]([C@H]4[C@@H]([C@]5(C)C(=CC4)C[C@@H](O[C@@H]4[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@@H](O)[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@H](CO)O4)CC5)CC3)C[C@@H]2O1)C)[C@H]1[C@H](O)[C@H](O)[C@H](O)[C@@H](CO)O1 LVTJOONKWUXEFR-FZRMHRINSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/52—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US46406790A | 1990-01-12 | 1990-01-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE4040035A1 true DE4040035A1 (de) | 1991-07-25 |
| DE4040035C2 DE4040035C2 (enrdf_load_stackoverflow) | 1992-11-19 |
Family
ID=23842415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE4040035A Granted DE4040035A1 (de) | 1990-01-12 | 1990-12-14 | Sehr harter metallischer kohlenstoff |
Country Status (2)
| Country | Link |
|---|---|
| CA (1) | CA2033138A1 (enrdf_load_stackoverflow) |
| DE (1) | DE4040035A1 (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4339326A1 (de) * | 1993-11-19 | 1995-05-24 | Winter Cvd Technik Gmbh | Abrichtrolle für Schleifscheiben |
-
1990
- 1990-12-14 DE DE4040035A patent/DE4040035A1/de active Granted
- 1990-12-24 CA CA002033138A patent/CA2033138A1/en not_active Abandoned
Non-Patent Citations (1)
| Title |
|---|
| Z.: MATYUSHENKO, N. et.al.: JETP Lett., Vol. 30(1979), No. 4, 20, S. 199-202 * |
Also Published As
| Publication number | Publication date |
|---|---|
| DE4040035C2 (enrdf_load_stackoverflow) | 1992-11-19 |
| CA2033138A1 (en) | 1991-07-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE60017968T2 (de) | Verfahren zur Herstellung von Kohlenstoff-Nanoröhren | |
| DE3876120T2 (de) | Chemisches gasphasenabscheidungsverfahren zur herstellung einer kohlenstoffschicht. | |
| DE69305238T2 (de) | Verfahren zur Herstellung von grossen Monokristallen | |
| DE69413138T2 (de) | Verfahren zur Bildung von Beschichtungen aus kristallinem Siliziumcarbid | |
| DE3415799C2 (enrdf_load_stackoverflow) | ||
| DE3855539T3 (de) | Sublimationsanwachsen von siliziumkarbideinkristallen | |
| DE69015650T2 (de) | Herstellung von diamantverbundbeschichteten Schneidwerkzeugen. | |
| DE68911469T2 (de) | Gleichmässiger, dünner Diamantfilm sowie ein Verfahren zu dessen Herstellung. | |
| DE69507607T2 (de) | Verfahren zum herstellen von diamantfilmen | |
| Nagakura | Study of metallic carbides by electron diffraction Part IV. Cobalt carbides | |
| DE69413910T2 (de) | Niedrigtemperaturverfahren zur Herstellung von kristallinen Silizium-Karbid Beschichtungen | |
| DE3620329C2 (enrdf_load_stackoverflow) | ||
| DE112013000502T5 (de) | Herstellung von Mono- und Multischicht-Graphen hoher Qualität in großem Maßstab durch chemische Abscheidung aus der Gasphase | |
| DE68913085T2 (de) | Diamantzüchtung auf einem Substrat mit Hilfe von Mikrowellenenergie. | |
| DE69009799T2 (de) | Verfahren zur Herstellung einer Einkristallschicht aus Diamant. | |
| DE3687529T2 (de) | Herstellung von graphiteinlagerungsverbindung und gedopte carbonfilme. | |
| DE1521465C3 (de) | Verfahren zur Herstellung von texturlosem polykristallinen Silicium | |
| DE69623177T2 (de) | Bauelement mit einer Schicht aus beta-C3N4 | |
| DE69101756T2 (de) | Verfahren zur Diamantenherstellung. | |
| DE3853905T2 (de) | Verfahren zur Herstellung monokristalliner dünner Schichten aus LnA2Cu307-x mit einer Perovskit-Struktur mit 3 Ebenen. | |
| DE69720791T2 (de) | Verfahren zur herstellung von diamandfilmen unter verwendung eines dampfphasensynthesesystems | |
| DE3613012C2 (enrdf_load_stackoverflow) | ||
| DE4040035A1 (de) | Sehr harter metallischer kohlenstoff | |
| DE102004034667A1 (de) | Synthetische Diamantpartikel und Verfahren zur Herstellung von synthetischen Diamantpartikeln | |
| DE3783632T2 (de) | Herstellungsverfahren einer niedergeschlagenen schicht. |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8320 | Willingness to grant licences declared (paragraph 23) | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |