DE4002642C2 - - Google Patents
Info
- Publication number
- DE4002642C2 DE4002642C2 DE4002642A DE4002642A DE4002642C2 DE 4002642 C2 DE4002642 C2 DE 4002642C2 DE 4002642 A DE4002642 A DE 4002642A DE 4002642 A DE4002642 A DE 4002642A DE 4002642 C2 DE4002642 C2 DE 4002642C2
- Authority
- DE
- Germany
- Prior art keywords
- gas
- laser
- metal
- laser gas
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000007670 refining Methods 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 25
- 229910052731 fluorine Inorganic materials 0.000 claims description 24
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 23
- 239000011737 fluorine Substances 0.000 claims description 23
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 claims description 21
- 239000010457 zeolite Substances 0.000 claims description 20
- 229910021536 Zeolite Inorganic materials 0.000 claims description 19
- 150000001875 compounds Chemical class 0.000 claims description 16
- 229910052756 noble gas Inorganic materials 0.000 claims description 16
- 239000007787 solid Substances 0.000 claims description 14
- 239000003513 alkali Substances 0.000 claims description 11
- 229910001512 metal fluoride Inorganic materials 0.000 claims description 11
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 238000001179 sorption measurement Methods 0.000 claims description 9
- 229910052783 alkali metal Inorganic materials 0.000 claims description 8
- 150000001340 alkali metals Chemical class 0.000 claims description 8
- 150000002222 fluorine compounds Chemical class 0.000 claims description 8
- 239000000356 contaminant Substances 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 6
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- HUAUNKAZQWMVFY-UHFFFAOYSA-M sodium;oxocalcium;hydroxide Chemical compound [OH-].[Na+].[Ca]=O HUAUNKAZQWMVFY-UHFFFAOYSA-M 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052700 potassium Inorganic materials 0.000 claims description 3
- 230000009257 reactivity Effects 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- 229910052745 lead Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 150000001339 alkali metal compounds Chemical class 0.000 claims 1
- 150000001341 alkaline earth metal compounds Chemical class 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000007789 gas Substances 0.000 description 97
- 238000006243 chemical reaction Methods 0.000 description 30
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 13
- 239000000203 mixture Substances 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 229910052743 krypton Inorganic materials 0.000 description 4
- 229910052724 xenon Inorganic materials 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 3
- 229910052754 neon Inorganic materials 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003701 inert diluent Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000002808 molecular sieve Substances 0.000 description 2
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910021386 carbon form Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 210000004185 liver Anatomy 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000012265 solid product Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/036—Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering, replenishing; Means for circulating the gas, e.g. for equalising the pressure within the tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1020284A JPH0760914B2 (ja) | 1989-01-30 | 1989-01-30 | エキシマーレーザーガスの精製法並びにその装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE4002642A1 DE4002642A1 (de) | 1990-08-02 |
| DE4002642C2 true DE4002642C2 (cg-RX-API-DMAC7.html) | 1992-02-06 |
Family
ID=12022871
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE4002642A Granted DE4002642A1 (de) | 1989-01-30 | 1990-01-30 | Verfahren zum raffinieren von in excimerlasern verwendetem edelgas-fluorid-gas |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4964137A (cg-RX-API-DMAC7.html) |
| JP (1) | JPH0760914B2 (cg-RX-API-DMAC7.html) |
| CA (1) | CA2008294C (cg-RX-API-DMAC7.html) |
| DE (1) | DE4002642A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ES2059216T3 (es) * | 1991-03-06 | 1994-11-01 | Air Liquide | Un metodo para prolongar la vida util de los gases de los laseres excimeros. |
| US5307364A (en) * | 1993-05-24 | 1994-04-26 | Spectra Gases, Inc. | Addition of oxygen to a gas mix for use in an excimer laser |
| US6030591A (en) * | 1994-04-06 | 2000-02-29 | Atmi Ecosys Corporation | Process for removing and recovering halocarbons from effluent process streams |
| US5622682A (en) * | 1994-04-06 | 1997-04-22 | Atmi Ecosys Corporation | Method for concentration and recovery of halocarbons from effluent gas streams |
| JP3986597B2 (ja) * | 1996-10-15 | 2007-10-03 | 関東電化工業株式会社 | 三フッ化窒素含有ガスの処理方法及びそのための処理剤 |
| US5982795A (en) * | 1997-12-22 | 1999-11-09 | Cymer, Inc. | Excimer laser having power supply with fine digital regulation |
| US6128323A (en) * | 1997-04-23 | 2000-10-03 | Cymer, Inc. | Reliable modular production quality narrow-band high REP rate excimer laser |
| US6330261B1 (en) | 1997-07-18 | 2001-12-11 | Cymer, Inc. | Reliable, modular, production quality narrow-band high rep rate ArF excimer laser |
| JP3725781B2 (ja) * | 1997-12-15 | 2005-12-14 | サイマー， インコーポレイテッド | 高パルス速度パルス電源システム |
| US6212214B1 (en) * | 1998-10-05 | 2001-04-03 | Lambda Physik Ag | Performance control system and method for gas discharge lasers |
| US6526085B2 (en) | 1998-10-05 | 2003-02-25 | Lambda Physik Ag | Performance control system and method for gas discharge lasers |
| DE19942455A1 (de) | 1998-10-05 | 2000-04-06 | Lambda Physik Gmbh | Leistungssteuersystem und -verfahren für Gasentladungslaser |
| US6069909A (en) * | 1999-03-08 | 2000-05-30 | Xmr, Inc. | Excimer laser with improved window mount |
| US6727731B1 (en) | 1999-03-12 | 2004-04-27 | Lambda Physik Ag | Energy control for an excimer or molecular fluorine laser |
| BRPI0302019B1 (pt) * | 2002-06-03 | 2017-02-21 | Praxair Technology Inc | método para produzir um gás de ressonador de laser de dióxido de carbono, e, método para cortar, modificar superfície, ou soldar um artigo |
| KR20020096026A (ko) * | 2002-10-16 | 2002-12-28 | 장성진 | 고순도의 염기성／불활성 가스 제조를 위한 정제방법 및장치 |
| US6843830B2 (en) * | 2003-04-15 | 2005-01-18 | Advanced Technology Materials, Inc. | Abatement system targeting a by-pass effluent stream of a semiconductor process tool |
| US7074378B2 (en) * | 2004-01-23 | 2006-07-11 | Air Products And Chemicals, Inc. | Process for the purification of NF3 |
| JP6175471B2 (ja) * | 2015-10-30 | 2017-08-02 | 日本エア・リキード株式会社 | ネオン回収精製システムおよびネオン回収精製方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4674090A (en) * | 1985-01-28 | 1987-06-16 | Signetics Corporation | Method of using complementary logic gates to test for faults in electronic components |
| US4722090A (en) * | 1985-03-18 | 1988-01-26 | Mitsubishi Denki Kabushiki Kaisha | Excimer laser equipment |
| JPS6274430A (ja) * | 1985-09-28 | 1987-04-06 | Central Glass Co Ltd | 希ガスハライドエキシマ−レ−ザ−ガスの精製法 |
| CA1298959C (en) * | 1985-09-28 | 1992-04-21 | Kohzo Hakuta | Method of refining rare gas halide excimer laser gas |
| JPH0624605B2 (ja) * | 1986-05-29 | 1994-04-06 | セントラル硝子株式会社 | 希ガスハライドエキシマ−レ−ザ−ガスの精製法 |
| JPH0199272A (ja) * | 1987-10-13 | 1989-04-18 | Hamamatsu Photonics Kk | ガス精製装置 |
-
1989
- 1989-01-30 JP JP1020284A patent/JPH0760914B2/ja not_active Expired - Fee Related
-
1990
- 1990-01-18 US US07/466,930 patent/US4964137A/en not_active Expired - Lifetime
- 1990-01-22 CA CA002008294A patent/CA2008294C/en not_active Expired - Fee Related
- 1990-01-30 DE DE4002642A patent/DE4002642A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| CA2008294C (en) | 1996-03-19 |
| JPH0760914B2 (ja) | 1995-06-28 |
| US4964137A (en) | 1990-10-16 |
| DE4002642A1 (de) | 1990-08-02 |
| JPH02201984A (ja) | 1990-08-10 |
| CA2008294A1 (en) | 1990-07-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE4002642C2 (cg-RX-API-DMAC7.html) | ||
| DE3632995C2 (cg-RX-API-DMAC7.html) | ||
| DE68926732T2 (de) | Verfahren zur Reinigung von gasförmigem Stickstofftrifluorid | |
| DE60203551T2 (de) | Herstellung von hochreinem Sauerstoff durch Druckwechseladsorption | |
| DE69430706T2 (de) | Rezyklieren von zur reinigung von halbleiterscheiben verwendeten stoffen | |
| DE69200250T2 (de) | Verfahren zur verlängerung der gaslebensdauer von excimer-lasern. | |
| DE69513615T2 (de) | Verfahren zum Reinigen von Halogen-enthaltendem Gas | |
| DE3132758A1 (de) | Absorptionsverfahren | |
| DE3302402C2 (cg-RX-API-DMAC7.html) | ||
| DE69006462T2 (de) | Verfahren zur Abwasserbehandlung mit hochkonzentriertem Ozonwasser. | |
| DE68907366T2 (de) | Verfahren zur Raffinierung von Stickstofftrifluoridgas. | |
| EP0075663B1 (de) | Verfahren und Vorrichtung zur Herstellung von hochreinem Stickstoff | |
| DE69409423T2 (de) | Verfahren zur Reinigung von Schadgas | |
| DE69508904T2 (de) | Verfahren und Vorrichtung zur Behandlung einer Ozon enthaltender Gasmischung | |
| DE3230922A1 (de) | Verfahren zur behandlung von stoffen mit ozon | |
| DE2506378A1 (de) | Verfahren und vorrichtung zum behandeln von abgasen | |
| DE69635898T2 (de) | Zusammensetzung die mindestens natriumbicarbonat enthält, verfahren zu deren herstellung und deren verwendungen | |
| EP0487834A1 (de) | Oxidierendes Waschverfahren zur Reinigung von Abgasen | |
| EP0329149A2 (de) | Verfahren zur Entfernung von n-dotierenden Verunreinigungen aus bei der Gasphasenabscheidung von Silicium anfallenden flüssigen oder gasförmigen Stoffen | |
| DE602004004042T2 (de) | Entfernung von Verunreinigungen enthaltend Schwefel von flüchtigen Metallhydride | |
| EP3768635A1 (de) | Verfahren und vorrichtung zum herstellen einer chlordioxid enthaltenden wässrigen lösung | |
| DE69734784T2 (de) | Verfahren zur behandlung von abgasen mit halogen enthaltender verbindung | |
| DE69402979T2 (de) | Verfahren zum abtrennen von chlor aus einer gasmischung | |
| DE19914243A1 (de) | Verfahren zur Herstellung hochreiner Lösungen unter Verwendung von gasförmigem Fluorwasserstoff | |
| DE3624780C2 (cg-RX-API-DMAC7.html) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |