DE3926065A1 - Verfahren zur herstellung eines led-feldes - Google Patents

Verfahren zur herstellung eines led-feldes

Info

Publication number
DE3926065A1
DE3926065A1 DE3926065A DE3926065A DE3926065A1 DE 3926065 A1 DE3926065 A1 DE 3926065A1 DE 3926065 A DE3926065 A DE 3926065A DE 3926065 A DE3926065 A DE 3926065A DE 3926065 A1 DE3926065 A1 DE 3926065A1
Authority
DE
Germany
Prior art keywords
type
layer
process step
current blocking
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE3926065A
Other languages
German (de)
English (en)
Other versions
DE3926065C2 (enrdf_load_stackoverflow
Inventor
Ki-Joon Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Samsung Electro Mechanics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE3926065A1 publication Critical patent/DE3926065A1/de
Application granted granted Critical
Publication of DE3926065C2 publication Critical patent/DE3926065C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
    • B41J2/447—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources
    • B41J2/45—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources using light-emitting diode [LED] or laser arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/8242—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/099—LED, multicolor

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Led Devices (AREA)
DE3926065A 1988-12-17 1989-08-07 Verfahren zur herstellung eines led-feldes Granted DE3926065A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR880016845 1988-12-17

Publications (2)

Publication Number Publication Date
DE3926065A1 true DE3926065A1 (de) 1990-06-21
DE3926065C2 DE3926065C2 (enrdf_load_stackoverflow) 1993-06-09

Family

ID=19280267

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3926065A Granted DE3926065A1 (de) 1988-12-17 1989-08-07 Verfahren zur herstellung eines led-feldes

Country Status (4)

Country Link
US (1) US4999310A (enrdf_load_stackoverflow)
JP (1) JPH02174272A (enrdf_load_stackoverflow)
DE (1) DE3926065A1 (enrdf_load_stackoverflow)
GB (1) GB2226183B (enrdf_load_stackoverflow)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03237784A (ja) * 1990-02-15 1991-10-23 Omron Corp 半導体素子およびその製造方法
JP3323324B2 (ja) * 1993-06-18 2002-09-09 株式会社リコー 発光ダイオードおよび発光ダイオードアレイ
US5449926A (en) * 1994-05-09 1995-09-12 Motorola, Inc. High density LED arrays with semiconductor interconnects
JP2783210B2 (ja) * 1995-09-04 1998-08-06 日本電気株式会社 面発光型ダイオード
JP2806423B2 (ja) * 1996-03-08 1998-09-30 日本電気株式会社 面発光型半導体素子
GB2329756A (en) * 1997-09-25 1999-03-31 Univ Bristol Assemblies of light emitting diodes
US6200134B1 (en) * 1998-01-20 2001-03-13 Kerr Corporation Apparatus and method for curing materials with radiation
US7320593B2 (en) 2000-03-08 2008-01-22 Tir Systems Ltd. Light emitting diode light source for curing dental composites
US6890781B2 (en) * 2002-06-25 2005-05-10 Uni Light Technology Inc. Transparent layer of a LED device and the method for growing the same
CN1678252B (zh) 2002-07-25 2011-06-29 乔纳森·S·达姆 传输热能的器械、提供预定方向的光的装置及发光装置
US7182597B2 (en) * 2002-08-08 2007-02-27 Kerr Corporation Curing light instrument
WO2004038759A2 (en) * 2002-08-23 2004-05-06 Dahm Jonathan S Method and apparatus for using light emitting diodes
CN100594327C (zh) * 2004-06-15 2010-03-17 汉高公司 大功率led电-光学器件组件
CA2585755C (en) * 2004-10-28 2013-02-26 Henkel Corporation Led assembly with led-reflector interconnect
US8113830B2 (en) * 2005-05-27 2012-02-14 Kerr Corporation Curing light instrument
US8047686B2 (en) * 2006-09-01 2011-11-01 Dahm Jonathan S Multiple light-emitting element heat pipe assembly
TWI384650B (zh) * 2008-07-18 2013-02-01 Lextar Electronics Corp 發光二極體晶片的製造方法
US9066777B2 (en) 2009-04-02 2015-06-30 Kerr Corporation Curing light device
US9072572B2 (en) 2009-04-02 2015-07-07 Kerr Corporation Dental light device
CN101625981B (zh) * 2009-08-03 2011-01-19 南昌欣磊光电科技有限公司 一种高像素密度led显示模块及其制作方法
CN108288661B (zh) * 2017-01-10 2021-05-11 英属开曼群岛商錼创科技股份有限公司 微型发光二极管晶片以及显示面板

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4280273A (en) * 1978-11-20 1981-07-28 The General Electric Company Limited Manufacture of monolithic LED arrays for electroluminescent display devices
EP0047591B1 (en) * 1980-09-10 1985-11-21 Northern Telecom Limited Light emitting diodes with high external quantum efficiency

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1478152A (en) * 1974-10-03 1977-06-29 Standard Telephones Cables Ltd Light emissive diode
US4032951A (en) * 1976-04-13 1977-06-28 Bell Telephone Laboratories, Incorporated Growth of iii-v layers containing arsenic, antimony and phosphorus, and device uses
JPS533784A (en) * 1976-07-01 1978-01-13 Sumitomo Electric Ind Ltd Light emitting diode for optical fibers and its production
JPS5448493A (en) * 1977-03-23 1979-04-17 Toshiba Corp Semiconductor optical device
US4220960A (en) * 1978-10-25 1980-09-02 International Telephone And Telegraph Corporation Light emitting diode structure
NL7811683A (nl) * 1978-11-29 1980-06-02 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderin- richting en halfgeleiderinrichting vervaardigd volgens deze werkwijze.
US4297783A (en) * 1979-01-30 1981-11-03 Bell Telephone Laboratories, Incorporated Method of fabricating GaAs devices utilizing a semi-insulating layer of AlGaAs in combination with an overlying masking layer
JPS61500754A (ja) * 1983-12-14 1986-04-17 ハネウエル・インコ−ポレ−テツド 広帯域で高輝度の表面放射ｌｅｄおよびそれの製造方法
US4719497A (en) * 1984-06-15 1988-01-12 Hewlett-Packard Company High efficiency light-emitting diode
US4694311A (en) * 1985-05-22 1987-09-15 Trw Inc. Planar light-emitting diode
US4879250A (en) * 1988-09-29 1989-11-07 The Boeing Company Method of making a monolithic interleaved LED/PIN photodetector array

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4280273A (en) * 1978-11-20 1981-07-28 The General Electric Company Limited Manufacture of monolithic LED arrays for electroluminescent display devices
EP0047591B1 (en) * 1980-09-10 1985-11-21 Northern Telecom Limited Light emitting diodes with high external quantum efficiency

Also Published As

Publication number Publication date
GB2226183A (en) 1990-06-20
DE3926065C2 (enrdf_load_stackoverflow) 1993-06-09
GB8924721D0 (en) 1989-12-20
GB2226183B (en) 1993-02-24
JPH02174272A (ja) 1990-07-05
US4999310A (en) 1991-03-12

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: SAMSUNG ELECTRO-MECHANICS CO.LTD., SUWON, GYEONGGI

Owner name: SAMSUNG ELECTRONICS CO., LTD., SUWON, KYONGGI, KR