DE3586196T2 - Lichtemittierende diodenanordnung. - Google Patents

Lichtemittierende diodenanordnung.

Info

Publication number
DE3586196T2
DE3586196T2 DE19853586196 DE3586196T DE3586196T2 DE 3586196 T2 DE3586196 T2 DE 3586196T2 DE 19853586196 DE19853586196 DE 19853586196 DE 3586196 T DE3586196 T DE 3586196T DE 3586196 T2 DE3586196 T2 DE 3586196T2
Authority
DE
Germany
Prior art keywords
light
emitting diode
diode arrangement
arrangement
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19853586196
Other languages
English (en)
Other versions
DE3586196D1 (de
Inventor
Joseph John Daniele
Mehdi Najm Araghi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/667,706 external-priority patent/US4639999A/en
Priority claimed from US06/729,707 external-priority patent/US4587717A/en
Application filed by Xerox Corp filed Critical Xerox Corp
Application granted granted Critical
Publication of DE3586196D1 publication Critical patent/DE3586196D1/de
Publication of DE3586196T2 publication Critical patent/DE3586196T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
DE19853586196 1984-11-02 1985-10-31 Lichtemittierende diodenanordnung. Expired - Fee Related DE3586196T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/667,706 US4639999A (en) 1984-11-02 1984-11-02 High resolution, high efficiency I.R. LED printing array fabrication method
US06/729,707 US4587717A (en) 1985-05-02 1985-05-02 LED printing array fabrication method

Publications (2)

Publication Number Publication Date
DE3586196D1 DE3586196D1 (de) 1992-07-16
DE3586196T2 true DE3586196T2 (de) 1992-12-03

Family

ID=27099748

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19853586196 Expired - Fee Related DE3586196T2 (de) 1984-11-02 1985-10-31 Lichtemittierende diodenanordnung.

Country Status (3)

Country Link
EP (1) EP0180479B1 (de)
JP (1) JPH0736449B2 (de)
DE (1) DE3586196T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63138787A (ja) * 1986-12-01 1988-06-10 Fuji Electric Co Ltd 線状発光素子
US4864369A (en) * 1988-07-05 1989-09-05 Hewlett-Packard Company P-side up double heterojunction AlGaAs light-emitting diode
JP2763008B2 (ja) * 1988-11-28 1998-06-11 三菱化学株式会社 ダブルヘテロ型エピタキシャル・ウエハおよび発光ダイオード
JPH02196465A (ja) * 1989-01-26 1990-08-03 Hitachi Ltd 集積化光素子
DE3931262A1 (de) * 1989-09-19 1991-03-28 Siemens Ag Monolithisch integrierte led-anordnung in zeilenform
DE4303225C2 (de) * 1993-02-04 1996-08-14 Siemens Nixdorf Inf Syst Optischer Zeichengenerator für einen elektrografischen Drucker
US5510633A (en) * 1994-06-08 1996-04-23 Xerox Corporation Porous silicon light emitting diode arrays and method of fabrication
AU6112198A (en) * 1997-02-12 1998-09-08 Peter Anthony Fry Herbert A diode array
JP4023971B2 (ja) * 1999-12-03 2007-12-19 ローム株式会社 チップ型半導体装置
US8339433B2 (en) * 2010-08-18 2012-12-25 Xerox Corporation Alternate matrix drive method for a 1200dpi LED print-head
US9781800B2 (en) 2015-05-21 2017-10-03 Infineon Technologies Ag Driving several light sources
US9974130B2 (en) 2015-05-21 2018-05-15 Infineon Technologies Ag Driving several light sources
US9918367B1 (en) 2016-11-18 2018-03-13 Infineon Technologies Ag Current source regulation

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2079612A5 (de) * 1970-02-06 1971-11-12 Radiotechnique Compelec
US3846193A (en) * 1972-06-22 1974-11-05 Ibm Minimizing cross-talk in l.e.d.arrays
GB1467096A (en) * 1975-06-09 1977-03-16 Akimov Method for producing array of semiconductor light-emissive elements
US4455562A (en) * 1981-08-14 1984-06-19 Pitney Bowes Inc. Control of a light emitting diode array
JPS5640234A (en) * 1979-09-12 1981-04-16 Fujitsu Ltd Light-electricity converting element
FR2491714A1 (fr) * 1980-10-06 1982-04-09 Radiotechnique Compelec Dispositif semi-conducteur a diodes electroluminescentes localisees et son procede de fabrication
GB2099221B (en) 1981-05-26 1985-11-20 Purdy Haydn Victor Light emitting diode array devices and image transfer systems

Also Published As

Publication number Publication date
EP0180479A3 (en) 1987-11-19
EP0180479B1 (de) 1992-06-10
JPS61110478A (ja) 1986-05-28
EP0180479A2 (de) 1986-05-07
DE3586196D1 (de) 1992-07-16
JPH0736449B2 (ja) 1995-04-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee