DK506988D0 - Kantemitterende, lysemitterende diode - Google Patents

Kantemitterende, lysemitterende diode

Info

Publication number
DK506988D0
DK506988D0 DK506988A DK506988A DK506988D0 DK 506988 D0 DK506988 D0 DK 506988D0 DK 506988 A DK506988 A DK 506988A DK 506988 A DK506988 A DK 506988A DK 506988 D0 DK506988 D0 DK 506988D0
Authority
DK
Denmark
Prior art keywords
mitting
light
emitting diode
diode
emitting
Prior art date
Application number
DK506988A
Other languages
English (en)
Other versions
DK506988A (da
Inventor
Richard Stephen Butlin
Andrew Julian Nichola Houghton
Original Assignee
Stc Plc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stc Plc filed Critical Stc Plc
Publication of DK506988D0 publication Critical patent/DK506988D0/da
Publication of DK506988A publication Critical patent/DK506988A/da

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Optical Couplings Of Light Guides (AREA)
DK506988A 1987-09-12 1988-09-12 Kantemitterende, lysemitterende diode DK506988A (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB878721491A GB8721491D0 (en) 1987-09-12 1987-09-12 Light emissive diode

Publications (2)

Publication Number Publication Date
DK506988D0 true DK506988D0 (da) 1988-09-12
DK506988A DK506988A (da) 1989-03-13

Family

ID=10623688

Family Applications (1)

Application Number Title Priority Date Filing Date
DK506988A DK506988A (da) 1987-09-12 1988-09-12 Kantemitterende, lysemitterende diode

Country Status (5)

Country Link
US (1) US4937638A (da)
EP (1) EP0308082A3 (da)
JP (1) JPH01140680A (da)
DK (1) DK506988A (da)
GB (2) GB8721491D0 (da)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5138624A (en) * 1989-11-16 1992-08-11 The Boeing Company Multiwavelength LED and laser diode optical source
US5382812A (en) * 1993-04-14 1995-01-17 Kobe Development Corporation Diamond and II-VI heterojunction semiconductor light emitting device
DE102004024156B4 (de) * 2004-03-31 2011-01-13 Osram Opto Semiconductors Gmbh Kantenemittierender Diodenlaser
US11257388B2 (en) * 2019-10-30 2022-02-22 Honeywell International Inc. Obstruction detection and warning system and method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4152044A (en) * 1977-06-17 1979-05-01 International Telephone And Telegraph Corporation Galium aluminum arsenide graded index waveguide
US4376946A (en) * 1980-11-28 1983-03-15 Bell Telephone Laboratories, Incorporated Superluminescent LED with efficient coupling to optical waveguide

Also Published As

Publication number Publication date
JPH01140680A (ja) 1989-06-01
DK506988A (da) 1989-03-13
GB2209869A (en) 1989-05-24
GB2209869B (en) 1990-11-21
GB8721491D0 (en) 1987-10-21
GB8819471D0 (en) 1988-09-21
US4937638A (en) 1990-06-26
EP0308082A2 (en) 1989-03-22
EP0308082A3 (en) 1990-07-18

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Legal Events

Date Code Title Description
AHB Application shelved due to non-payment