DE3887840D1 - Superlumineszierende Diode. - Google Patents

Superlumineszierende Diode.

Info

Publication number
DE3887840D1
DE3887840D1 DE88119963T DE3887840T DE3887840D1 DE 3887840 D1 DE3887840 D1 DE 3887840D1 DE 88119963 T DE88119963 T DE 88119963T DE 3887840 T DE3887840 T DE 3887840T DE 3887840 D1 DE3887840 D1 DE 3887840D1
Authority
DE
Germany
Prior art keywords
superluminescent diode
superluminescent
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE88119963T
Other languages
English (en)
Other versions
DE3887840T2 (de
Inventor
Yoshio Noguchi
Haruo Nagai
Kazumasa Takada
Juichi Noda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Application granted granted Critical
Publication of DE3887840D1 publication Critical patent/DE3887840D1/de
Publication of DE3887840T2 publication Critical patent/DE3887840T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/30—Testing of optical devices, constituted by fibre optics or optical waveguides
    • G01M11/31—Testing of optical devices, constituted by fibre optics or optical waveguides with a light emitter and a light receiver being disposed at the same side of a fibre or waveguide end-face, e.g. reflectometers
    • G01M11/3172—Reflectometers detecting the back-scattered light in the frequency-domain, e.g. OFDR, FMCW, heterodyne detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0045—Devices characterised by their operation the devices being superluminescent diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Led Devices (AREA)
DE3887840T 1987-12-02 1988-11-30 Superlumineszierende Diode. Expired - Lifetime DE3887840T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP30329687 1987-12-02
JP20602488 1988-08-19
JP24962788A JPH0682863B2 (ja) 1987-12-02 1988-10-03 発光ダイオード

Publications (2)

Publication Number Publication Date
DE3887840D1 true DE3887840D1 (de) 1994-03-24
DE3887840T2 DE3887840T2 (de) 1994-09-22

Family

ID=27328575

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3887840T Expired - Lifetime DE3887840T2 (de) 1987-12-02 1988-11-30 Superlumineszierende Diode.

Country Status (4)

Country Link
US (1) US4901123A (de)
EP (1) EP0318947B1 (de)
JP (1) JPH0682863B2 (de)
DE (1) DE3887840T2 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02150079A (ja) * 1988-11-30 1990-06-08 Oki Electric Ind Co Ltd スーパールミネッセントダイオード
US5008889A (en) * 1989-11-06 1991-04-16 Wilson Keith E High-accuracy wavelength stabilization of angled-stripe super luminescent laser diode sources
FR2663435B1 (fr) * 1990-06-13 1992-09-11 Commissariat Energie Atomique Filtre optique spatial monomode integre et son procede de fabrication.
JPH04296067A (ja) * 1991-03-26 1992-10-20 Mitsubishi Precision Co Ltd スーパー・ルミネッセント・ダイオード
JPH05129720A (ja) * 1991-11-07 1993-05-25 Hitachi Ltd 半導体レーザ装置
US5329134A (en) * 1992-01-10 1994-07-12 International Business Machines Corporation Superluminescent diode having a quantum well and cavity length dependent threshold current
US5252839A (en) * 1992-06-10 1993-10-12 Hewlett-Packard Company Superluminescent light-emitting diode with reverse biased absorber
JPH0645642A (ja) * 1992-07-22 1994-02-18 Mitsubishi Precision Co Ltd スーパールミネッセントダイオード及びその製造方法
DE69603015T2 (de) * 1995-03-07 1999-12-23 British Telecomm Laser
EP0808522B1 (de) * 1995-11-08 2000-02-16 Uniphase Opto Holdings, Inc. Halbleiterlaser, insbesondere laserverstärker und herstellungsverfahren dieses lasers
US6034380A (en) * 1997-10-07 2000-03-07 Sarnoff Corporation Electroluminescent diode with mode expander
US6091755A (en) * 1997-11-21 2000-07-18 Sdl, Inc. Optically amplifying semiconductor diodes with curved waveguides for external cavities
US6184542B1 (en) 1998-06-16 2001-02-06 Princeton Lightwave Superluminescent diode and optical amplifier with extended bandwidth
US6262415B1 (en) 1999-07-29 2001-07-17 Litton Systems, Inc. Orientation sensor system with high precision optical interrogation and dense multiplexing
WO2001063331A1 (en) * 2000-02-25 2001-08-30 Princeton Lightwave, Inc. Multi-pass, arcuate bent waveguide, high power superluminescent diode
SE521023C2 (sv) * 2000-07-07 2003-09-23 Ericsson Telefon Ab L M Optisk anordning samt framställning därav
JP2002076432A (ja) * 2000-08-30 2002-03-15 Stanley Electric Co Ltd 端面発光型半導体装置、その製造方法及び光空間伝送装置
JP2002176224A (ja) * 2000-12-07 2002-06-21 Fuji Photo Film Co Ltd レーザー光源
JP4660999B2 (ja) * 2001-08-01 2011-03-30 パナソニック株式会社 光導波路デバイス及びコヒーレント光源及び光学装置
GB0215669D0 (en) * 2002-07-05 2002-08-14 Denselight Semiconductors Pte Superluminescent diode
US20040061122A1 (en) * 2002-09-27 2004-04-01 Gerard Alphonse Light emitting device with low back facet reflections
JP2004281686A (ja) * 2003-03-14 2004-10-07 Sumitomo Electric Ind Ltd 半導体発光デバイス及びその製造方法
KR101208030B1 (ko) * 2009-03-23 2012-12-04 한국전자통신연구원 외부 공진 레이저 광원
JP5548422B2 (ja) 2009-10-15 2014-07-16 シチズンホールディングス株式会社 レーザ光源
US20110103418A1 (en) * 2009-11-03 2011-05-05 The Regents Of The University Of California Superluminescent diodes by crystallographic etching
JP5958916B2 (ja) * 2011-05-02 2016-08-02 パナソニックＩｐマネジメント株式会社 スーパールミネッセントダイオード
JP5403305B2 (ja) * 2013-01-23 2014-01-29 セイコーエプソン株式会社 発光装置
PL224641B1 (pl) * 2014-06-03 2017-01-31 Wrocławskie Centrum Badań Eit + Spółka Z Ograniczoną Dioda superluminescencyjna na bazie AlInGaN
CN104485403A (zh) * 2014-12-31 2015-04-01 中国科学院半导体研究所 曲率渐变的弯曲波导量子点超辐射发光管及其制备方法
PL228006B1 (pl) * 2015-09-23 2018-02-28 Inst Wysokich Ciśnień Polskiej Akademii Nauk Dioda superluminescencyjna na bazie stopu AlInGaN
US11125689B2 (en) * 2018-07-13 2021-09-21 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits
EP3893326A1 (de) * 2020-04-06 2021-10-13 Nokia Technologies Oy Vorrichtung mit einem wellenleiter für hochfrequenzsignale

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5743485A (en) * 1980-08-13 1982-03-11 Agency Of Ind Science & Technol Semiconductor ring laser device
US4718070A (en) * 1985-01-22 1988-01-05 Massachusetts Institute Of Technology Surface emitting diode laser
US4730331A (en) * 1985-04-03 1988-03-08 Xerox Corporation Superluminescent LED source
US4634928A (en) * 1985-04-19 1987-01-06 Trw Inc. Superluminescent light-emitting diode and related method
US4799229A (en) * 1986-05-15 1989-01-17 Canon Kabushiki Kaisha Semiconductor laser array

Also Published As

Publication number Publication date
JPH02146778A (ja) 1990-06-05
DE3887840T2 (de) 1994-09-22
EP0318947A3 (en) 1990-06-13
EP0318947B1 (de) 1994-02-16
JPH0682863B2 (ja) 1994-10-19
US4901123A (en) 1990-02-13
EP0318947A2 (de) 1989-06-07

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Legal Events

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8364 No opposition during term of opposition