DE3888341T2 - Halbleitersubstrat mit einem supraleitenden Dünnfilm. - Google Patents

Halbleitersubstrat mit einem supraleitenden Dünnfilm.

Info

Publication number
DE3888341T2
DE3888341T2 DE3888341T DE3888341T DE3888341T2 DE 3888341 T2 DE3888341 T2 DE 3888341T2 DE 3888341 T DE3888341 T DE 3888341T DE 3888341 T DE3888341 T DE 3888341T DE 3888341 T2 DE3888341 T2 DE 3888341T2
Authority
DE
Germany
Prior art keywords
thin film
semiconductor substrate
superconducting thin
superconducting
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Revoked
Application number
DE3888341T
Other languages
English (en)
Other versions
DE3888341D1 (de
Inventor
Hideo Itozaki
Keizo Harada
Naoji Fujimori
Shuji Yazu
Tetsuji Jodai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27584939&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3888341(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from JP62331210A external-priority patent/JPH01173668A/ja
Priority claimed from JP62331203A external-priority patent/JPH01173661A/ja
Priority claimed from JP62331208A external-priority patent/JPH01173666A/ja
Priority claimed from JP62331205A external-priority patent/JPH01173663A/ja
Priority claimed from JP62331215A external-priority patent/JPH01173673A/ja
Priority claimed from JP62331209A external-priority patent/JPH01173667A/ja
Priority claimed from JP62331214A external-priority patent/JPH01173672A/ja
Priority claimed from JP62331206A external-priority patent/JPH01173664A/ja
Priority claimed from JP62331212A external-priority patent/JPH01173670A/ja
Priority claimed from JP62331204A external-priority patent/JPH01173662A/ja
Priority claimed from JP62331216A external-priority patent/JPH01173674A/ja
Priority claimed from JP62331213A external-priority patent/JPH01173671A/ja
Priority claimed from JP62331211A external-priority patent/JPH01173669A/ja
Priority claimed from JP62331207A external-priority patent/JPH01173665A/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE3888341D1 publication Critical patent/DE3888341D1/de
Application granted granted Critical
Publication of DE3888341T2 publication Critical patent/DE3888341T2/de
Anticipated expiration legal-status Critical
Revoked legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0604Monocrystalline substrates, e.g. epitaxial growth
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/20Permanent superconducting devices
    • H10N60/205Permanent superconducting devices having three or more electrodes, e.g. transistor-like structures 
    • H10N60/207Field effect devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Containers, Films, And Cooling For Superconductive Devices (AREA)
DE3888341T 1987-12-26 1988-12-26 Halbleitersubstrat mit einem supraleitenden Dünnfilm. Revoked DE3888341T2 (de)

Applications Claiming Priority (14)

Application Number Priority Date Filing Date Title
JP62331205A JPH01173663A (ja) 1987-12-26 1987-12-26 超電導体層を有する半導体基板
JP62331215A JPH01173673A (ja) 1987-12-26 1987-12-26 超電導体層を有する半導体基板
JP62331209A JPH01173667A (ja) 1987-12-26 1987-12-26 超電導体層を有する半導体基板
JP62331214A JPH01173672A (ja) 1987-12-26 1987-12-26 超電導体層を有する半導体基板
JP62331216A JPH01173674A (ja) 1987-12-26 1987-12-26 超電導体層を有する半導体基板
JP62331208A JPH01173666A (ja) 1987-12-26 1987-12-26 超電導体層を有する半導体基板
JP62331210A JPH01173668A (ja) 1987-12-26 1987-12-26 超電導体層を有する半導体基板
JP62331206A JPH01173664A (ja) 1987-12-26 1987-12-26 超電導体層を有する半導体基板
JP62331213A JPH01173671A (ja) 1987-12-26 1987-12-26 超電導体層を有する半導体基板
JP62331211A JPH01173669A (ja) 1987-12-26 1987-12-26 超電導体層を有する半導体基板
JP62331203A JPH01173661A (ja) 1987-12-26 1987-12-26 超電導体層を有する半導体基板
JP62331207A JPH01173665A (ja) 1987-12-26 1987-12-26 超電導体層を有する半導体基板
JP62331204A JPH01173662A (ja) 1987-12-26 1987-12-26 超電導体層を有する半導体基板
JP62331212A JPH01173670A (ja) 1987-12-26 1987-12-26 超電導体層を有する半導体基板

Publications (2)

Publication Number Publication Date
DE3888341D1 DE3888341D1 (de) 1994-04-14
DE3888341T2 true DE3888341T2 (de) 1994-09-01

Family

ID=27584939

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3888341T Revoked DE3888341T2 (de) 1987-12-26 1988-12-26 Halbleitersubstrat mit einem supraleitenden Dünnfilm.

Country Status (4)

Country Link
US (1) US5910662A (de)
EP (1) EP0325877B1 (de)
DE (1) DE3888341T2 (de)
HK (1) HK164695A (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02177381A (ja) * 1988-09-22 1990-07-10 Semiconductor Energy Lab Co Ltd 超伝導体のトンネル接合素子
US5362709A (en) * 1988-09-22 1994-11-08 Semiconductor Energy Laboratory, Co., Ltd. Superconducting device
FR2638569B1 (fr) * 1988-10-25 1992-11-20 Seiko Epson Corp Transistor josephson du type a effet de champ et procede de fabrication d'une jonction josephson
AU635040B2 (en) * 1989-06-30 1993-03-11 Sumitomo Electric Industries, Ltd. Substrate having a superconductor layer
EP0551033B1 (de) * 1991-12-10 1997-03-19 Sumitomo Electric Industries, Ltd. Supraleitendes Bauelement mit extrem dünnem Kanal aus supraleitendem Oxyd und sein Herstellungsverfahren
JP3608459B2 (ja) * 1999-12-28 2005-01-12 株式会社村田製作所 薄膜積層体、強誘電体薄膜素子およびそれらの製造方法
JP4714918B2 (ja) * 2002-11-29 2011-07-06 独立行政法人科学技術振興機構 スピン注入素子及びスピン注入素子を用いた磁気装置
US10256392B1 (en) 2018-03-23 2019-04-09 International Business Machines Corporation Vertical transmon qubit device
US10672971B2 (en) 2018-03-23 2020-06-02 International Business Machines Corporation Vertical transmon qubit device with microstrip waveguides
US10243132B1 (en) 2018-03-23 2019-03-26 International Business Machines Corporation Vertical josephson junction superconducting device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950010206B1 (ko) * 1987-03-09 1995-09-11 가부시끼가이샤 한도다이 에네르기 겐꾸쇼 전자 장치 및 그 제조 방법
CA1326976C (en) * 1987-05-26 1994-02-15 Satoshi Takano Superconducting member
US4892861A (en) * 1987-08-14 1990-01-09 Aluminum Company Of America Liquid phase sintered superconducting cermet
US4931424A (en) * 1987-09-04 1990-06-05 Henty David L Method for formation of high temperature superconductor films with reduced substrate heating
US4837609A (en) * 1987-09-09 1989-06-06 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices having superconducting interconnects

Also Published As

Publication number Publication date
EP0325877B1 (de) 1994-03-09
HK164695A (en) 1995-10-27
EP0325877A1 (de) 1989-08-02
DE3888341D1 (de) 1994-04-14
US5910662A (en) 1999-06-08

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8331 Complete revocation