HK164695A - A semiconductor substrate having a superconducting thin film - Google Patents
A semiconductor substrate having a superconducting thin filmInfo
- Publication number
- HK164695A HK164695A HK164695A HK164695A HK164695A HK 164695 A HK164695 A HK 164695A HK 164695 A HK164695 A HK 164695A HK 164695 A HK164695 A HK 164695A HK 164695 A HK164695 A HK 164695A
- Authority
- HK
- Hong Kong
- Prior art keywords
- thin film
- semiconductor substrate
- superconducting thin
- superconducting
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
- H10N60/0604—Monocrystalline substrates, e.g. epitaxial growth
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/20—Permanent superconducting devices
- H10N60/205—Permanent superconducting devices having three or more electrodes, e.g. transistor-like structures
- H10N60/207—Field effect devices
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Containers, Films, And Cooling For Superconductive Devices (AREA)
Applications Claiming Priority (14)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62331213A JPH01173671A (ja) | 1987-12-26 | 1987-12-26 | 超電導体層を有する半導体基板 |
JP62331206A JPH01173664A (ja) | 1987-12-26 | 1987-12-26 | 超電導体層を有する半導体基板 |
JP62331210A JPH01173668A (ja) | 1987-12-26 | 1987-12-26 | 超電導体層を有する半導体基板 |
JP62331204A JPH01173662A (ja) | 1987-12-26 | 1987-12-26 | 超電導体層を有する半導体基板 |
JP62331203A JPH01173661A (ja) | 1987-12-26 | 1987-12-26 | 超電導体層を有する半導体基板 |
JP62331205A JPH01173663A (ja) | 1987-12-26 | 1987-12-26 | 超電導体層を有する半導体基板 |
JP62331211A JPH01173669A (ja) | 1987-12-26 | 1987-12-26 | 超電導体層を有する半導体基板 |
JP62331215A JPH01173673A (ja) | 1987-12-26 | 1987-12-26 | 超電導体層を有する半導体基板 |
JP62331209A JPH01173667A (ja) | 1987-12-26 | 1987-12-26 | 超電導体層を有する半導体基板 |
JP62331207A JPH01173665A (ja) | 1987-12-26 | 1987-12-26 | 超電導体層を有する半導体基板 |
JP62331216A JPH01173674A (ja) | 1987-12-26 | 1987-12-26 | 超電導体層を有する半導体基板 |
JP62331208A JPH01173666A (ja) | 1987-12-26 | 1987-12-26 | 超電導体層を有する半導体基板 |
JP62331212A JPH01173670A (ja) | 1987-12-26 | 1987-12-26 | 超電導体層を有する半導体基板 |
JP62331214A JPH01173672A (ja) | 1987-12-26 | 1987-12-26 | 超電導体層を有する半導体基板 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK164695A true HK164695A (en) | 1995-10-27 |
Family
ID=27584939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK164695A HK164695A (en) | 1987-12-26 | 1995-10-19 | A semiconductor substrate having a superconducting thin film |
Country Status (4)
Country | Link |
---|---|
US (1) | US5910662A (de) |
EP (1) | EP0325877B1 (de) |
DE (1) | DE3888341T2 (de) |
HK (1) | HK164695A (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02177381A (ja) * | 1988-09-22 | 1990-07-10 | Semiconductor Energy Lab Co Ltd | 超伝導体のトンネル接合素子 |
US5362709A (en) * | 1988-09-22 | 1994-11-08 | Semiconductor Energy Laboratory, Co., Ltd. | Superconducting device |
FR2638569B1 (fr) * | 1988-10-25 | 1992-11-20 | Seiko Epson Corp | Transistor josephson du type a effet de champ et procede de fabrication d'une jonction josephson |
EP0406126B2 (de) * | 1989-06-30 | 1997-12-17 | Sumitomo Electric Industries, Ltd. | Substrat mit einer supraleitenden Schicht |
DE69218388T2 (de) * | 1991-12-10 | 1997-10-23 | Sumitomo Electric Industries | Supraleitendes Bauelement mit extrem dünnem Kanal aus supraleitendem Oxyd und sein Herstellungsverfahren |
JP3608459B2 (ja) * | 1999-12-28 | 2005-01-12 | 株式会社村田製作所 | 薄膜積層体、強誘電体薄膜素子およびそれらの製造方法 |
JP4714918B2 (ja) * | 2002-11-29 | 2011-07-06 | 独立行政法人科学技術振興機構 | スピン注入素子及びスピン注入素子を用いた磁気装置 |
US10672971B2 (en) | 2018-03-23 | 2020-06-02 | International Business Machines Corporation | Vertical transmon qubit device with microstrip waveguides |
US10256392B1 (en) | 2018-03-23 | 2019-04-09 | International Business Machines Corporation | Vertical transmon qubit device |
US10243132B1 (en) | 2018-03-23 | 2019-03-26 | International Business Machines Corporation | Vertical josephson junction superconducting device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR950010206B1 (ko) * | 1987-03-09 | 1995-09-11 | 가부시끼가이샤 한도다이 에네르기 겐꾸쇼 | 전자 장치 및 그 제조 방법 |
CA1326976C (en) * | 1987-05-26 | 1994-02-15 | Satoshi Takano | Superconducting member |
US4892861A (en) * | 1987-08-14 | 1990-01-09 | Aluminum Company Of America | Liquid phase sintered superconducting cermet |
US4931424A (en) * | 1987-09-04 | 1990-06-05 | Henty David L | Method for formation of high temperature superconductor films with reduced substrate heating |
US4837609A (en) * | 1987-09-09 | 1989-06-06 | American Telephone And Telegraph Company, At&T Bell Laboratories | Semiconductor devices having superconducting interconnects |
-
1988
- 1988-12-26 DE DE3888341T patent/DE3888341T2/de not_active Revoked
- 1988-12-26 EP EP88403329A patent/EP0325877B1/de not_active Revoked
-
1993
- 1993-12-14 US US08/167,437 patent/US5910662A/en not_active Expired - Fee Related
-
1995
- 1995-10-19 HK HK164695A patent/HK164695A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
US5910662A (en) | 1999-06-08 |
EP0325877A1 (de) | 1989-08-02 |
EP0325877B1 (de) | 1994-03-09 |
DE3888341D1 (de) | 1994-04-14 |
DE3888341T2 (de) | 1994-09-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NR | Patent deemed never to have been added to the register under section 13(7) of patents (transitional arrangements) rules |