DE3686605T2 - Photovoltaische duennfilmvorrichtung. - Google Patents

Photovoltaische duennfilmvorrichtung.

Info

Publication number
DE3686605T2
DE3686605T2 DE8686304253T DE3686605T DE3686605T2 DE 3686605 T2 DE3686605 T2 DE 3686605T2 DE 8686304253 T DE8686304253 T DE 8686304253T DE 3686605 T DE3686605 T DE 3686605T DE 3686605 T2 DE3686605 T2 DE 3686605T2
Authority
DE
Germany
Prior art keywords
thin film
film device
photovoltaic thin
photovoltaic
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686304253T
Other languages
English (en)
Other versions
DE3686605D1 (de
Inventor
Robert D Wieting
Richard R Potter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shell Solar Industries LP
Original Assignee
Siemens Solar Industries LP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Solar Industries LP filed Critical Siemens Solar Industries LP
Application granted granted Critical
Publication of DE3686605D1 publication Critical patent/DE3686605D1/de
Publication of DE3686605T2 publication Critical patent/DE3686605T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
DE8686304253T 1985-06-04 1986-06-04 Photovoltaische duennfilmvorrichtung. Expired - Lifetime DE3686605T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/740,946 US4612411A (en) 1985-06-04 1985-06-04 Thin film solar cell with ZnO window layer

Publications (2)

Publication Number Publication Date
DE3686605D1 DE3686605D1 (de) 1992-10-08
DE3686605T2 true DE3686605T2 (de) 1993-02-25

Family

ID=24978718

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686304253T Expired - Lifetime DE3686605T2 (de) 1985-06-04 1986-06-04 Photovoltaische duennfilmvorrichtung.

Country Status (4)

Country Link
US (1) US4612411A (de)
EP (1) EP0206585B1 (de)
JP (2) JPH0634405B2 (de)
DE (1) DE3686605T2 (de)

Families Citing this family (87)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5045409A (en) * 1987-11-27 1991-09-03 Atlantic Richfield Company Process for making thin film solar cell
US5141564A (en) * 1988-05-03 1992-08-25 The Boeing Company Mixed ternary heterojunction solar cell
US5078804A (en) * 1989-06-27 1992-01-07 The Boeing Company I-III-VI2 based solar cell utilizing the structure CuInGaSe2 CdZnS/ZnO
US5078803A (en) * 1989-09-22 1992-01-07 Siemens Solar Industries L.P. Solar cells incorporating transparent electrodes comprising hazy zinc oxide
US5015503A (en) * 1990-02-07 1991-05-14 The University Of Delaware Apparatus for producing compound semiconductor thin films
DE4103291A1 (de) * 1990-09-22 1992-04-02 Battelle Institut E V Verfahren zur herstellung einer absorberschicht fuer solarzellen mit hilfe galvanischer abscheidetechnik
JP2974485B2 (ja) * 1992-02-05 1999-11-10 キヤノン株式会社 光起電力素子の製造法
JP2713847B2 (ja) 1992-12-28 1998-02-16 キヤノン株式会社 薄膜太陽電池
US5474939A (en) * 1992-12-30 1995-12-12 Siemens Solar Industries International Method of making thin film heterojunction solar cell
DE69326676T2 (de) * 1992-12-30 2000-03-09 Siemens Solar Ind Int Verfahren zum Herstellen einer Dünnschicht-Heteroübergang-Sonnenzelle
US5772431A (en) * 1995-05-22 1998-06-30 Yazaki Corporation Thin-film solar cell manufacturing apparatus and manufacturing method
DE69637333T2 (de) * 1995-06-27 2008-10-02 International Business Machines Corp. Kupferlegierungen für Chipverbindungen und Herstellungsverfahren
DE69734183T8 (de) * 1996-10-15 2007-03-29 Matsushita Electric Industrial Co., Ltd., Kadoma Sonnenzelle und Herstellungsverfahren
JP3527815B2 (ja) * 1996-11-08 2004-05-17 昭和シェル石油株式会社 薄膜太陽電池の透明導電膜の製造方法
US5948176A (en) * 1997-09-29 1999-09-07 Midwest Research Institute Cadmium-free junction fabrication process for CuInSe2 thin film solar cells
US6107562A (en) * 1998-03-24 2000-08-22 Matsushita Electric Industrial Co., Ltd. Semiconductor thin film, method for manufacturing the same, and solar cell using the same
JP2000091603A (ja) * 1998-09-07 2000-03-31 Honda Motor Co Ltd 太陽電池
JP3540275B2 (ja) * 1998-10-09 2004-07-07 ローム株式会社 ｐ型ＺｎＯ単結晶およびその製造方法
JP3089407B2 (ja) 1998-10-09 2000-09-18 工業技術院長 太陽電池薄膜の作製方法
US6259016B1 (en) * 1999-03-05 2001-07-10 Matsushita Electric Industrial Co., Ltd. Solar cell
JP4126332B2 (ja) * 1999-08-13 2008-07-30 学校法人高知工科大学 低抵抗ｐ型単結晶酸化亜鉛およびその製造方法
WO2002017359A2 (en) * 2000-08-18 2002-02-28 Midwest Research Institute High carrier concentration p-type transparent conducting oxide films
JP4662616B2 (ja) 2000-10-18 2011-03-30 パナソニック株式会社 太陽電池
FR2820241B1 (fr) * 2001-01-31 2003-09-19 Saint Gobain Substrat transparent muni d'une electrode
US7517784B2 (en) * 2001-08-17 2009-04-14 Alliance For Sustainable Energy, Llc Method for producing high carrier concentration p-Type transparent conducting oxides
US6887736B2 (en) * 2002-06-24 2005-05-03 Cermet, Inc. Method of forming a p-type group II-VI semiconductor crystal layer on a substrate
US7141863B1 (en) 2002-11-27 2006-11-28 University Of Toledo Method of making diode structures
JP4241446B2 (ja) * 2003-03-26 2009-03-18 キヤノン株式会社 積層型光起電力素子
US7179677B2 (en) * 2003-09-03 2007-02-20 Midwest Research Institute ZnO/Cu(InGa)Se2 solar cells prepared by vapor phase Zn doping
US7611573B2 (en) * 2004-04-02 2009-11-03 Alliance For Sustainable Energy, Llc ZnS/Zn(O,OH)S-based buffer layer deposition for solar cells
US7303632B2 (en) * 2004-05-26 2007-12-04 Cree, Inc. Vapor assisted growth of gallium nitride
JP4841173B2 (ja) * 2005-05-27 2011-12-21 昭和シェル石油株式会社 Ｃｉｓ系薄膜太陽電池の高抵抗バッファ層・窓層連続製膜方法及び製膜装置
US7723154B1 (en) 2005-10-19 2010-05-25 North Carolina State University Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities
EP1964180B1 (de) 2005-12-21 2010-08-04 Saint-Gobain Glass France S.A. Prozess zum herstellen eines photovoltaischen dünnfilmbauelements
US8101858B2 (en) * 2006-03-14 2012-01-24 Corus Technology B.V. Chalcopyrite semiconductor based photovoltaic solar cell comprising a metal substrate, coated metal substrate for a photovoltaic solar cell and manufacturing method thereof
US20070215945A1 (en) * 2006-03-20 2007-09-20 Canon Kabushiki Kaisha Light control device and display
CN100449793C (zh) * 2006-05-26 2009-01-07 华东师范大学 一种铜铟硒CuInSe2太阳能电池及其制备方法
US20080197016A1 (en) * 2007-02-20 2008-08-21 Mikuro Denshi Corporation Limited Thin Film Deposited Substrate and Deposition System for Such Thin Film
US8071179B2 (en) 2007-06-29 2011-12-06 Stion Corporation Methods for infusing one or more materials into nano-voids if nanoporous or nanostructured materials
EP3327170B1 (de) 2007-09-12 2020-11-04 Flisom AG Vorrichtung zum herstellen eines verbindungsfilms
JP2009135337A (ja) 2007-11-30 2009-06-18 Showa Shell Sekiyu Kk Ｃｉｓ系太陽電池の積層構造、ｃｉｓ系薄膜太陽電池の集積構造及び製造方法
DE102007060236A1 (de) * 2007-12-14 2009-06-18 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Verfahren zur Herstellung eines eine mindestens ZnO enthaltende Zweifach-Pufferschicht aufweisenden Heterokontaktes und Heterokontakt mit Zweifach-Pufferschicht
US8440903B1 (en) 2008-02-21 2013-05-14 Stion Corporation Method and structure for forming module using a powder coating and thermal treatment process
US8075723B1 (en) 2008-03-03 2011-12-13 Stion Corporation Laser separation method for manufacture of unit cells for thin film photovoltaic materials
US8772078B1 (en) 2008-03-03 2014-07-08 Stion Corporation Method and system for laser separation for exclusion region of multi-junction photovoltaic materials
US7919710B2 (en) * 2008-04-30 2011-04-05 Nexpower Technology Corp. Solar cell containing silicon and chalcopyrite semiconductor layers
US7939454B1 (en) 2008-05-31 2011-05-10 Stion Corporation Module and lamination process for multijunction cells
US20090301562A1 (en) * 2008-06-05 2009-12-10 Stion Corporation High efficiency photovoltaic cell and manufacturing method
US8207008B1 (en) 2008-08-01 2012-06-26 Stion Corporation Affixing method and solar decal device using a thin film photovoltaic
US20100051090A1 (en) 2008-08-28 2010-03-04 Stion Corporation Four terminal multi-junction thin film photovoltaic device and method
US8383450B2 (en) * 2008-09-30 2013-02-26 Stion Corporation Large scale chemical bath system and method for cadmium sulfide processing of thin film photovoltaic materials
US8217261B2 (en) 2008-09-30 2012-07-10 Stion Corporation Thin film sodium species barrier method and structure for cigs based thin film photovoltaic cell
US8425739B1 (en) 2008-09-30 2013-04-23 Stion Corporation In chamber sodium doping process and system for large scale cigs based thin film photovoltaic materials
US7947524B2 (en) 2008-09-30 2011-05-24 Stion Corporation Humidity control and method for thin film photovoltaic materials
US7863074B2 (en) 2008-09-30 2011-01-04 Stion Corporation Patterning electrode materials free from berm structures for thin film photovoltaic cells
US8008198B1 (en) * 2008-09-30 2011-08-30 Stion Corporation Large scale method and furnace system for selenization of thin film photovoltaic materials
US20110018103A1 (en) * 2008-10-02 2011-01-27 Stion Corporation System and method for transferring substrates in large scale processing of cigs and/or cis devices
US8168463B2 (en) 2008-10-17 2012-05-01 Stion Corporation Zinc oxide film method and structure for CIGS cell
KR101022821B1 (ko) * 2008-12-31 2011-03-17 한국철강 주식회사 광기전력 장치의 제조 방법
JP2009170928A (ja) * 2009-02-20 2009-07-30 Showa Shell Sekiyu Kk Ｃｉｓ系太陽電池の製造方法
US8563850B2 (en) 2009-03-16 2013-10-22 Stion Corporation Tandem photovoltaic cell and method using three glass substrate configuration
EP2239786A1 (de) 2009-04-09 2010-10-13 Von Roll Solar AG Photovoltaische Hochleistungsvorrichtung, photovoltaischer Kollektor und zugehöriges Herstellungsverfahren
US8241943B1 (en) 2009-05-08 2012-08-14 Stion Corporation Sodium doping method and system for shaped CIGS/CIS based thin film solar cells
US8372684B1 (en) 2009-05-14 2013-02-12 Stion Corporation Method and system for selenization in fabricating CIGS/CIS solar cells
US8519435B2 (en) 2009-06-08 2013-08-27 The University Of Toledo Flexible photovoltaic cells having a polyimide material layer and method of producing same
US8507786B1 (en) 2009-06-27 2013-08-13 Stion Corporation Manufacturing method for patterning CIGS/CIS solar cells
US8398772B1 (en) 2009-08-18 2013-03-19 Stion Corporation Method and structure for processing thin film PV cells with improved temperature uniformity
WO2011024867A1 (ja) * 2009-08-26 2011-03-03 シャープ株式会社 積層型光起電力素子および積層型光起電力素子の製造方法
TWI488313B (zh) 2009-09-28 2015-06-11 Stion Corp 用於大規模處理覆蓋玻璃基板的基於ｃｉｓ和／或ｃｉｇｓ的薄膜的熱管理和方法
US8859880B2 (en) * 2010-01-22 2014-10-14 Stion Corporation Method and structure for tiling industrial thin-film solar devices
US9096930B2 (en) 2010-03-29 2015-08-04 Stion Corporation Apparatus for manufacturing thin film photovoltaic devices
US8142521B2 (en) 2010-03-29 2012-03-27 Stion Corporation Large scale MOCVD system for thin film photovoltaic devices
US7829376B1 (en) 2010-04-07 2010-11-09 Lumenz, Inc. Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities
US20110259413A1 (en) 2010-04-21 2011-10-27 Stion Corporation Hazy Zinc Oxide Film for Shaped CIGS/CIS Solar Cells
US20110259395A1 (en) * 2010-04-21 2011-10-27 Stion Corporation Single Junction CIGS/CIS Solar Module
MX2012013614A (es) 2010-05-26 2013-03-20 Univ Toledo Estructuras fotovoltaicas que tienen una capa de interfaz de difraccion de luz y metodos para fabricar las mismas.
US8461061B2 (en) 2010-07-23 2013-06-11 Stion Corporation Quartz boat method and apparatus for thin film thermal treatment
US20120204939A1 (en) 2010-08-23 2012-08-16 Stion Corporation Structure and Method for High Efficiency CIS/CIGS-based Tandem Photovoltaic Module
US20130269767A1 (en) * 2010-09-03 2013-10-17 Tel Solar Ag Method of coating a substrate for manufacturing a solar cell
US8906732B2 (en) * 2010-10-01 2014-12-09 Stion Corporation Method and device for cadmium-free solar cells
US8628997B2 (en) * 2010-10-01 2014-01-14 Stion Corporation Method and device for cadmium-free solar cells
US8119513B1 (en) * 2010-11-22 2012-02-21 General Electric Company Method for making cadmium sulfide layer
JP5411839B2 (ja) * 2010-11-30 2014-02-12 住友重機械工業株式会社 太陽電池モジュールの製造方法及び成膜装置
KR101210034B1 (ko) * 2011-10-17 2012-12-07 엘지이노텍 주식회사 태양전지 및 이의 제조방법
KR101777598B1 (ko) * 2011-10-17 2017-09-14 한국전자통신연구원 태양전지 제조방법
MX2014007159A (es) * 2011-12-15 2014-08-29 Dow Global Technologies Llc Metodo para formar un dispositivo optoelectrico que tiene una capa estabilizada de oxido metalico.
WO2014155444A1 (ja) * 2013-03-26 2014-10-02 キヤノンアネルバ株式会社 太陽電池の製造方法、および太陽電池

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50151088A (de) * 1974-05-24 1975-12-04
JPS50151089A (de) * 1974-05-24 1975-12-04
JPS5313383A (en) * 1976-07-22 1978-02-06 Agency Of Ind Science & Technol Thin film light electromotive element
US4039357A (en) * 1976-08-27 1977-08-02 Bell Telephone Laboratories, Incorporated Etching of III-V semiconductor materials with H2 S in the preparation of heterodiodes to facilitate the deposition of cadmium sulfide
JPS54154293A (en) * 1978-05-25 1979-12-05 Matsushita Electric Ind Co Ltd Photoconductive element
JPS5548978A (en) * 1978-10-04 1980-04-08 Asahi Chem Ind Co Ltd Photo-electromotive element
US4335266A (en) * 1980-12-31 1982-06-15 The Boeing Company Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2
JPS5831584A (ja) * 1981-08-19 1983-02-24 Matsushita Electric Ind Co Ltd 太陽電池の製造方法
JPS59194479A (ja) * 1983-04-20 1984-11-05 Tomoegawa Paper Co Ltd 薄膜型光電変換素子およびその製造方法

Also Published As

Publication number Publication date
US4612411A (en) 1986-09-16
EP0206585B1 (de) 1992-09-02
JPH0634405B2 (ja) 1994-05-02
EP0206585A2 (de) 1986-12-30
JPS61279181A (ja) 1986-12-09
JP2651886B2 (ja) 1997-09-10
JPH06209116A (ja) 1994-07-26
EP0206585A3 (en) 1987-05-13
DE3686605D1 (de) 1992-10-08

Similar Documents

Publication Publication Date Title
DE3686605D1 (de) Photovoltaische duennfilmvorrichtung.
KR880002268A (ko) 박막 형성장치
FI862754A (fi) Orienterad film med syrespaerr.
FR2588123B1 (fr) Dispositif photovoltaique
ES550463A0 (es) Un dispositivo fotovoltaico de pelicula delgada.
DE3650012D1 (de) Halbleitervorrichtung.
DE3687461D1 (de) Entwicklungsgeraet.
FI863753A0 (fi) Optisk film.
DE3788134D1 (de) Dünnfilmanordnung.
DE3683621D1 (de) Polyaethylennaphthalatfolie.
ES517864A0 (es) Dispositivo fotovoltaico pindesilicio amorfo.
DE3672397D1 (de) Haltevorrichtung.
DE3669644D1 (de) Epiliergeraet.
DE3883188T2 (de) Dünnfilm-Halbleiteranordung.
DE3678618D1 (de) Entwicklungsvorrichtung.
KR880700738A (ko) 박막형성장치
DE3577578D1 (de) Folienfermenter.
DE3580479D1 (de) Auftragsvorrichtung.
DE3675325D1 (de) Kaltverfestigungsvorrichtung.
DE3675418D1 (de) Entwicklungsvorrichtung.
DE3672038D1 (de) Abisoliergeraet.
DE3688227T2 (de) Filmuntersuchungsvorrichtung.
DE3672759D1 (de) Entschichtungsvorrichtung.
DE3779202D1 (de) Amorphe duennfilmtransistoranordnung.
FI860551A0 (fi) Gas-luft-avskiljare.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: DERZEIT KEIN VERTRETER BESTELLT

8327 Change in the person/name/address of the patent owner

Owner name: SHELL SOLAR INDUSTRIES LP (N.D.GES.D. STAATES DELA