JPS54154293A - Photoconductive element - Google Patents
Photoconductive elementInfo
- Publication number
- JPS54154293A JPS54154293A JP6302478A JP6302478A JPS54154293A JP S54154293 A JPS54154293 A JP S54154293A JP 6302478 A JP6302478 A JP 6302478A JP 6302478 A JP6302478 A JP 6302478A JP S54154293 A JPS54154293 A JP S54154293A
- Authority
- JP
- Japan
- Prior art keywords
- composed mainly
- film
- cdte
- vacuum
- layer composed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
PURPOSE: To increase the target voltage tolerance by laminating the material layer composed mainly of ZnO or CeO2, the material layer composed mainly of one of ZnS, ZnSe and CdS and the layer composed mainly of the mixed crystal of CdTe or ZnTe and CdTe respectively on the light transmissible substrate containing the transparent conducting film.
CONSTITUTION: The light transmissible substrate containing the transparent conducting film is kept at 25∼250°C and then undergoes sputtering in the O2 gas in order to produce the film of 0.02∼1μ thick and with the main component of ZnO. Then the film of about 0.02∼0.5μ and composed mainly of ZnS is vacuum-evaporated at the substrate temperature of about 200°C, and furthermore the thin film composed mainly of CdTe and then the thin film composed mainly of (ZnTe)0.99(In2Te3)0.01 are vacuum-evaporated sequentially in 0.1∼2.5μ thick. After this, a treatment is given for 3 minutes to 3 hours in the vacuum or inactive gas and at 300∼700°C. The photoconductive element thus obtained is used for the pickup tube target, thus increasing the voltage tolerance with high efficiency in the practical use.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6302478A JPS54154293A (en) | 1978-05-25 | 1978-05-25 | Photoconductive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6302478A JPS54154293A (en) | 1978-05-25 | 1978-05-25 | Photoconductive element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54154293A true JPS54154293A (en) | 1979-12-05 |
| JPS618595B2 JPS618595B2 (en) | 1986-03-15 |
Family
ID=13217333
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6302478A Granted JPS54154293A (en) | 1978-05-25 | 1978-05-25 | Photoconductive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54154293A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61136276A (en) * | 1984-12-06 | 1986-06-24 | シーメンス ソーラー インダストリーズ，エル．ピー． | Thin film solar cell having thin cadmium sulfide and transparent window layer |
| JPS61279181A (en) * | 1985-06-04 | 1986-12-09 | シーメンス ソーラー インダストリーズ，エル．ピー． | Thin film photovoltaic device |
-
1978
- 1978-05-25 JP JP6302478A patent/JPS54154293A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61136276A (en) * | 1984-12-06 | 1986-06-24 | シーメンス ソーラー インダストリーズ，エル．ピー． | Thin film solar cell having thin cadmium sulfide and transparent window layer |
| JPS61279181A (en) * | 1985-06-04 | 1986-12-09 | シーメンス ソーラー インダストリーズ，エル．ピー． | Thin film photovoltaic device |
| JPH06209116A (en) * | 1985-06-04 | 1994-07-26 | Siemens Solar Ind Lp | Manufacture of thin film photovoltaic device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS618595B2 (en) | 1986-03-15 |
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