DE69326676T2 - Verfahren zum Herstellen einer Dünnschicht-Heteroübergang-Sonnenzelle - Google Patents
Verfahren zum Herstellen einer Dünnschicht-Heteroübergang-SonnenzelleInfo
- Publication number
- DE69326676T2 DE69326676T2 DE69326676T DE69326676T DE69326676T2 DE 69326676 T2 DE69326676 T2 DE 69326676T2 DE 69326676 T DE69326676 T DE 69326676T DE 69326676 T DE69326676 T DE 69326676T DE 69326676 T2 DE69326676 T2 DE 69326676T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- thin film
- solar cell
- heterojunction solar
- film heterojunction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US99821192A | 1992-12-30 | 1992-12-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69326676D1 DE69326676D1 (de) | 1999-11-11 |
| DE69326676T2 true DE69326676T2 (de) | 2000-03-09 |
Family
ID=25544924
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69326676T Expired - Lifetime DE69326676T2 (de) | 1992-12-30 | 1993-12-08 | Verfahren zum Herstellen einer Dünnschicht-Heteroübergang-Sonnenzelle |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0604801B1 (de) |
| JP (1) | JPH077167A (de) |
| DE (1) | DE69326676T2 (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4440878C2 (de) * | 1994-11-16 | 1999-04-29 | Zsw | Verbindungshalbleiter-Dünnschichtsolarzelle und Verfahren zu ihrer Herstellung |
| JP3249407B2 (ja) * | 1996-10-25 | 2002-01-21 | 昭和シェル石油株式会社 | カルコパイライト系多元化合物半導体薄膜光吸収層からなる薄膜太陽電池 |
| WO2007071663A1 (en) * | 2005-12-21 | 2007-06-28 | Shell Erneuerbare Energien Gmbh | Process of making a thin-film photovoltaic device and thin-film photovoltaic device |
| KR101181095B1 (ko) * | 2010-10-11 | 2012-09-07 | 엘지이노텍 주식회사 | 태양 전지 및 이의 제조 방법 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4612411A (en) * | 1985-06-04 | 1986-09-16 | Atlantic Richfield Company | Thin film solar cell with ZnO window layer |
-
1993
- 1993-12-08 DE DE69326676T patent/DE69326676T2/de not_active Expired - Lifetime
- 1993-12-08 EP EP93119798A patent/EP0604801B1/de not_active Expired - Lifetime
- 1993-12-27 JP JP5332546A patent/JPH077167A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0604801A3 (de) | 1994-11-23 |
| EP0604801B1 (de) | 1999-10-06 |
| EP0604801A2 (de) | 1994-07-06 |
| DE69326676D1 (de) | 1999-11-11 |
| JPH077167A (ja) | 1995-01-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8328 | Change in the person/name/address of the agent |
Representative=s name: LENDVAI, T., DIPL.-CHEM. DR.RER.NAT., PAT.-ANW., 5 |