DE3887650D1 - Herstellungsverfahren einer Dünnschichtsonnenzelle. - Google Patents
Herstellungsverfahren einer Dünnschichtsonnenzelle.Info
- Publication number
- DE3887650D1 DE3887650D1 DE88311197T DE3887650T DE3887650D1 DE 3887650 D1 DE3887650 D1 DE 3887650D1 DE 88311197 T DE88311197 T DE 88311197T DE 3887650 T DE3887650 T DE 3887650T DE 3887650 D1 DE3887650 D1 DE 3887650D1
- Authority
- DE
- Germany
- Prior art keywords
- thin
- solar cell
- manufacturing process
- film solar
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12605787A | 1987-11-27 | 1987-11-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3887650D1 true DE3887650D1 (de) | 1994-03-17 |
DE3887650T2 DE3887650T2 (de) | 1994-08-04 |
Family
ID=22422764
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3887650T Expired - Lifetime DE3887650T2 (de) | 1987-11-27 | 1988-11-25 | Herstellungsverfahren einer Dünnschichtsonnenzelle. |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0318315B1 (de) |
JP (1) | JP3172794B2 (de) |
DE (1) | DE3887650T2 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0460287A1 (de) * | 1990-05-31 | 1991-12-11 | Siemens Aktiengesellschaft | Neuartige Chalkopyrit-Solarzelle |
JP2719039B2 (ja) * | 1990-09-21 | 1998-02-25 | 株式会社富士電機総合研究所 | CuInSe▲下2▼系化合物薄膜の形成方法 |
DE4103291A1 (de) * | 1990-09-22 | 1992-04-02 | Battelle Institut E V | Verfahren zur herstellung einer absorberschicht fuer solarzellen mit hilfe galvanischer abscheidetechnik |
EP0574716B1 (de) * | 1992-05-19 | 1996-08-21 | Matsushita Electric Industrial Co., Ltd. | Methode zur Herstellung einer Zusammensetzung des Typs Chalkopyrit |
US5578503A (en) * | 1992-09-22 | 1996-11-26 | Siemens Aktiengesellschaft | Rapid process for producing a chalcopyrite semiconductor on a substrate |
JP3064701B2 (ja) * | 1992-10-30 | 2000-07-12 | 松下電器産業株式会社 | カルコパイライト型化合物薄膜の製造方法 |
US5436204A (en) * | 1993-04-12 | 1995-07-25 | Midwest Research Institute | Recrystallization method to selenization of thin-film Cu(In,Ga)Se2 for semiconductor device applications |
WO1994027328A1 (en) * | 1993-05-07 | 1994-11-24 | Siemens Solar Industries International, Inc. | Process for at least partially converting semi-conductor films of the i-iii-vi2-type |
US5674555A (en) * | 1995-11-30 | 1997-10-07 | University Of Delaware | Process for preparing group Ib-IIIa-VIa semiconducting films |
CN100456502C (zh) * | 2004-04-09 | 2009-01-28 | 本田技研工业株式会社 | 黄铜矿型薄膜太阳能电池用光吸收层的制造方法 |
US7179678B1 (en) * | 2004-08-26 | 2007-02-20 | Hewlett-Packard Development Company, L.P. | EBIC response enhancement in type III-VI semiconductor material on silicon |
US8323408B2 (en) | 2007-12-10 | 2012-12-04 | Solopower, Inc. | Methods and apparatus to provide group VIA materials to reactors for group IBIIIAVIA film formation |
US8163090B2 (en) | 2007-12-10 | 2012-04-24 | Solopower, Inc. | Methods structures and apparatus to provide group VIA and IA materials for solar cell absorber formation |
CN101471394A (zh) * | 2007-12-29 | 2009-07-01 | 中国科学院上海硅酸盐研究所 | 铜铟镓硫硒薄膜太阳电池光吸收层的制备方法 |
DE102009012200A1 (de) | 2009-03-11 | 2010-09-16 | Centrotherm Photovoltaics Ag | Verfahren und Vorrichtung zur thermischen Umsetzung metallischer Precursorschichten in halbleitende Schichten mit Chalkogenquelle |
DE102009011496A1 (de) | 2009-03-06 | 2010-09-16 | Centrotherm Photovoltaics Ag | Verfahren und Vorrichtung zur thermischen Umsetzung metallischer Precursorschichten in halbleitende Schichten mit Chalkogenrückgewinnung |
DE102009011695A1 (de) | 2009-03-09 | 2010-09-16 | Centrotherm Photovoltaics Ag | Verfahren und Vorrichtung zur thermischen Umsetzung metallischer Precursorschichten in halbleitende Schichten |
TWI509107B (zh) | 2009-03-06 | 2015-11-21 | Centrotherm Photovoltaics Ag | 利用氧族元素源將金屬先驅物薄膜熱轉變成半導體薄膜之方法及裝置 |
JP5439097B2 (ja) | 2009-09-08 | 2014-03-12 | 東京応化工業株式会社 | 塗布装置及び塗布方法 |
JP5469966B2 (ja) | 2009-09-08 | 2014-04-16 | 東京応化工業株式会社 | 塗布装置及び塗布方法 |
CN102893370B (zh) | 2010-03-17 | 2015-12-16 | 陶氏环球技术有限责任公司 | 整合连接层的光电活性的、基于硫属元素的薄膜结构 |
JP2012081428A (ja) | 2010-10-13 | 2012-04-26 | Tokyo Ohka Kogyo Co Ltd | 塗布装置及び塗布方法 |
JP2012250230A (ja) | 2011-06-02 | 2012-12-20 | Tokyo Ohka Kogyo Co Ltd | 加熱装置、塗布装置及び加熱方法 |
US9236283B2 (en) | 2013-03-12 | 2016-01-12 | Tokyo Ohka Kogyo Co., Ltd. | Chamber apparatus and heating method |
JP6240440B2 (ja) | 2013-08-30 | 2017-11-29 | 東京応化工業株式会社 | チャンバー装置及び加熱方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4581108A (en) * | 1984-01-06 | 1986-04-08 | Atlantic Richfield Company | Process of forming a compound semiconductive material |
JPS61237476A (ja) * | 1985-04-12 | 1986-10-22 | シーメンス・ソラー・インダストリエス・リミテッド・パートナーシップ | 化合物半導体の製造方法 |
JPS6220381A (ja) * | 1985-07-16 | 1987-01-28 | シーメンス ソーラー インダストリーズ,エル.ピー. | 二セレン化インジウム銅半導体膜の製造方法 |
-
1988
- 1988-11-25 DE DE3887650T patent/DE3887650T2/de not_active Expired - Lifetime
- 1988-11-25 EP EP88311197A patent/EP0318315B1/de not_active Expired - Lifetime
- 1988-11-28 JP JP30044688A patent/JP3172794B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH01231313A (ja) | 1989-09-14 |
EP0318315A3 (en) | 1990-06-06 |
DE3887650T2 (de) | 1994-08-04 |
EP0318315B1 (de) | 1994-02-02 |
EP0318315A2 (de) | 1989-05-31 |
JP3172794B2 (ja) | 2001-06-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Free format text: DERZEIT KEIN VERTRETER BESTELLT |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: SHELL SOLAR INDUSTRIES LP (N.D.GES.D. STAATES DELA |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: SHELL ERNEUERBARE ENERGIEN GMBH, 22335 HAMBURG, DE |