DE3790981T1 - Verfahren zum herstellen von solarzellen mit einer antireflektions-beschichtung - Google Patents

Verfahren zum herstellen von solarzellen mit einer antireflektions-beschichtung

Info

Publication number
DE3790981T1
DE3790981T1 DE873790981T DE3790981T DE3790981T1 DE 3790981 T1 DE3790981 T1 DE 3790981T1 DE 873790981 T DE873790981 T DE 873790981T DE 3790981 T DE3790981 T DE 3790981T DE 3790981 T1 DE3790981 T1 DE 3790981T1
Authority
DE
Germany
Prior art keywords
solar cells
reflection coating
producing solar
producing
reflection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE873790981T
Other languages
English (en)
Other versions
DE3790981B4 (de
Inventor
Arup R Chaudhuri
Kramadhati Venkata Ravi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schott Solar CSP Inc
Original Assignee
Mobil Solar Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mobil Solar Energy Corp filed Critical Mobil Solar Energy Corp
Publication of DE3790981T1 publication Critical patent/DE3790981T1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
DE873790981T 1987-07-07 1987-07-07 Verfahren zum herstellen von solarzellen mit einer antireflektions-beschichtung Pending DE3790981T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1987/001622 WO1989000341A1 (en) 1987-07-07 1987-07-07 Method of fabricating solar cells with anti-reflection coating

Publications (1)

Publication Number Publication Date
DE3790981T1 true DE3790981T1 (de) 1989-07-06

Family

ID=22202457

Family Applications (2)

Application Number Title Priority Date Filing Date
DE873790981T Pending DE3790981T1 (de) 1987-07-07 1987-07-07 Verfahren zum herstellen von solarzellen mit einer antireflektions-beschichtung
DE3790981A Expired - Lifetime DE3790981B4 (de) 1987-07-07 1987-07-07 Verfahren zum Herstellen einer Photovoltaik-Solarzelle

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE3790981A Expired - Lifetime DE3790981B4 (de) 1987-07-07 1987-07-07 Verfahren zum Herstellen einer Photovoltaik-Solarzelle

Country Status (9)

Country Link
EP (1) EP0325606B1 (de)
JP (1) JPH0638513B2 (de)
KR (1) KR960001468B1 (de)
AU (1) AU609424B2 (de)
DE (2) DE3790981T1 (de)
GB (1) GB2215129B (de)
HK (1) HK105392A (de)
SG (1) SG104291G (de)
WO (1) WO1989000341A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE68918565T2 (de) * 1988-06-10 1995-03-09 Mobil Solar Energy Corp Verfahren zur herstellung von sonnenzellenkontakten.
US5411897A (en) * 1994-02-04 1995-05-02 Mobil Solar Energy Corporation Machine and method for applying solder paste to electronic devices such as solar cells
US5478402A (en) * 1994-02-17 1995-12-26 Ase Americas, Inc. Solar cell modules and method of making same
US5476553A (en) * 1994-02-18 1995-12-19 Ase Americas, Inc. Solar cell modules and method of making same
EP1085579B1 (de) * 1999-03-30 2009-02-18 Seiko Epson Corporation Herstellungsverfahren für eine solarzelle
JP4118187B2 (ja) * 2003-05-09 2008-07-16 信越半導体株式会社 太陽電池の製造方法
CN100576578C (zh) * 2006-04-20 2009-12-30 无锡尚德太阳能电力有限公司 制备太阳电池电极的方法及其电化学沉积装置
JP4864661B2 (ja) * 2006-11-22 2012-02-01 東京エレクトロン株式会社 太陽電池の製造方法及び太陽電池の製造装置
JP5173370B2 (ja) * 2007-11-21 2013-04-03 シャープ株式会社 光電変換素子の製造方法
EP2088630A1 (de) * 2008-02-08 2009-08-12 Applied Materials, Inc. Photovoltaische Vorrichtung mit einer durch Zerstäubung abgeschiedenen Passivierungsschicht sowie Verfahren und Apparat zur Herstellung einer solchen Vorrichtung
EP2139025A1 (de) 2008-06-25 2009-12-30 Applied Materials, Inc. Anordnung zur Beschichtung einer Kristallinsilizium-Solarzelle mit Reflektions- bzw. Passivationsschicht
DE102009008152A1 (de) * 2009-02-09 2010-08-19 Nb Technologies Gmbh Siliziumsolarzelle
JP2010282997A (ja) * 2009-06-02 2010-12-16 Seiko Epson Corp 太陽電池、太陽電池の製造方法
US20150007877A1 (en) * 2013-07-05 2015-01-08 Gtat Corporation Polysilazane coating for photovoltaic cells
KR102293742B1 (ko) 2018-05-31 2021-08-26 주식회사 숨비 태양전지용 보호필름 및 이의 제조방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4451969A (en) * 1983-01-10 1984-06-05 Mobil Solar Energy Corporation Method of fabricating solar cells

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3492167A (en) * 1966-08-26 1970-01-27 Matsushita Electric Ind Co Ltd Photovoltaic cell and method of making the same
JPS551133A (en) * 1978-06-19 1980-01-07 Fujitsu Ltd Photoelectric conversion semiconductor
US4266985A (en) * 1979-05-18 1981-05-12 Fujitsu Limited Process for producing a semiconductor device including an ion implantation step in combination with direct thermal nitridation of the silicon substrate
JPS5630770A (en) * 1979-08-21 1981-03-27 Seiko Epson Corp Solar battery
US4321283A (en) * 1979-10-26 1982-03-23 Mobil Tyco Solar Energy Corporation Nickel plating method
CA1164734A (en) * 1980-07-11 1984-04-03 Michael Schneider Method for applying an anti-reflection coating to a solar cell
JPS5823487A (ja) * 1981-08-06 1983-02-12 Agency Of Ind Science & Technol 多結晶シリコン太陽電池の製造方法
JPS58151070A (ja) * 1982-02-25 1983-09-08 Toshiba Corp 太陽電池及びその製造方法
JPS58220477A (ja) * 1982-06-16 1983-12-22 Japan Solar Energ Kk 太陽電池の製造方法
JPS59198718A (ja) * 1983-04-25 1984-11-10 Semiconductor Energy Lab Co Ltd 気相法による被膜作製方法
JPS604271A (ja) * 1983-06-22 1985-01-10 Toshiba Corp 太陽電池の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4451969A (en) * 1983-01-10 1984-06-05 Mobil Solar Energy Corporation Method of fabricating solar cells
DE3490007C2 (de) * 1983-01-10 1990-11-29 Mobil Solar Energy Corp., Waltham, Mass., Us

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Courcelle, E. et al.: The Use of H¶2¶ and NH¶3¶ Ion Implantation in the Passivation of Detects in Silicon Ribbon Grown by the Ribbon - Against - Drop Technique. In Ch-Z.: Solar Cells, Vol. 14, 1985, S. 157-166. Muller, J. C. et al.: Passivation of Polycrystalline Silicon Solar Cells by Low - Energy Hydrogen Ion Implantation. In CH-Z.: Solar Cells, Vol. 17, 1986, S. 201-231. *

Also Published As

Publication number Publication date
EP0325606A1 (de) 1989-08-02
JPH0638513B2 (ja) 1994-05-18
GB2215129A (en) 1989-09-13
SG104291G (en) 1992-02-14
DE3790981B4 (de) 2006-04-20
HK105392A (en) 1993-01-08
KR960001468B1 (ko) 1996-01-30
WO1989000341A1 (en) 1989-01-12
KR890702258A (ko) 1989-12-23
AU8038287A (en) 1989-01-30
AU609424B2 (en) 1991-05-02
GB2215129B (en) 1990-12-12
JPH02500397A (ja) 1990-02-08
EP0325606B1 (de) 1994-09-07
EP0325606A4 (en) 1991-05-08
GB8903852D0 (en) 1989-05-24

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8127 New person/name/address of the applicant

Owner name: ASE AMERICAS, INC., BILLERICA, MASS., US

8127 New person/name/address of the applicant

Owner name: RWE SCHOTT SOLAR INC. (N.D.GES.D. STAATES DELAWARE