DE3885587D1 - Verfahren zum Herstellen einer integrierten Schaltung mit MOS-Transistoren mittlerer Spannung. - Google Patents
Verfahren zum Herstellen einer integrierten Schaltung mit MOS-Transistoren mittlerer Spannung.Info
- Publication number
- DE3885587D1 DE3885587D1 DE88420417T DE3885587T DE3885587D1 DE 3885587 D1 DE3885587 D1 DE 3885587D1 DE 88420417 T DE88420417 T DE 88420417T DE 3885587 T DE3885587 T DE 3885587T DE 3885587 D1 DE3885587 D1 DE 3885587D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- integrated circuit
- mos transistors
- medium voltage
- voltage mos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000002513 implantation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
- Semiconductor Memories (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8717782A FR2624653B1 (fr) | 1987-12-14 | 1987-12-14 | Procede de fabrication d'un circuit integre comprenant des transistors mos moyenne tension |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3885587D1 true DE3885587D1 (de) | 1993-12-16 |
DE3885587T2 DE3885587T2 (de) | 1994-06-16 |
Family
ID=9358075
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3885587T Expired - Fee Related DE3885587T2 (de) | 1987-12-14 | 1988-12-14 | Verfahren zum Herstellen einer integrierten Schaltung mit MOS-Transistoren mittlerer Spannung. |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0321366B1 (de) |
JP (1) | JPH022171A (de) |
KR (1) | KR890011114A (de) |
AT (1) | ATE97258T1 (de) |
DE (1) | DE3885587T2 (de) |
FR (1) | FR2624653B1 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3924062C2 (de) * | 1989-07-21 | 1993-11-25 | Eurosil Electronic Gmbh | EEPROM-Halbleitereinrichtung mit Isolierzonen für Niedervolt-Logikelemente |
JP3141446B2 (ja) * | 1991-10-08 | 2001-03-05 | 日本電気株式会社 | 半導体装置の製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2123605A (en) * | 1982-06-22 | 1984-02-01 | Standard Microsyst Smc | MOS integrated circuit structure and method for its fabrication |
US4577394A (en) * | 1984-10-01 | 1986-03-25 | National Semiconductor Corporation | Reduction of field oxide encroachment in MOS fabrication |
-
1987
- 1987-12-14 FR FR8717782A patent/FR2624653B1/fr not_active Expired - Lifetime
-
1988
- 1988-12-05 KR KR1019880016176A patent/KR890011114A/ko not_active Application Discontinuation
- 1988-12-13 JP JP63314830A patent/JPH022171A/ja active Pending
- 1988-12-14 EP EP88420417A patent/EP0321366B1/de not_active Expired - Lifetime
- 1988-12-14 AT AT88420417T patent/ATE97258T1/de not_active IP Right Cessation
- 1988-12-14 DE DE3885587T patent/DE3885587T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE3885587T2 (de) | 1994-06-16 |
FR2624653B1 (fr) | 1991-10-11 |
EP0321366B1 (de) | 1993-11-10 |
ATE97258T1 (de) | 1993-11-15 |
EP0321366A1 (de) | 1989-06-21 |
JPH022171A (ja) | 1990-01-08 |
FR2624653A1 (fr) | 1989-06-16 |
KR890011114A (ko) | 1989-08-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |