DE3878751D1 - Verfahren zur elektronenstrahlaufzeichnung und system in verbindung mit kontinuierlich verschiebbarem tisch unter verwendung von gross-bereichsablenkung. - Google Patents
Verfahren zur elektronenstrahlaufzeichnung und system in verbindung mit kontinuierlich verschiebbarem tisch unter verwendung von gross-bereichsablenkung.Info
- Publication number
- DE3878751D1 DE3878751D1 DE8888107078T DE3878751T DE3878751D1 DE 3878751 D1 DE3878751 D1 DE 3878751D1 DE 8888107078 T DE8888107078 T DE 8888107078T DE 3878751 T DE3878751 T DE 3878751T DE 3878751 D1 DE3878751 D1 DE 3878751D1
- Authority
- DE
- Germany
- Prior art keywords
- connection
- electron beam
- large area
- sliding table
- beam recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
- H01J37/3045—Object or beam position registration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/10—Lenses
- H01J2237/103—Lenses characterised by lens type
- H01J2237/1035—Immersion lens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30433—System calibration
- H01J2237/30438—Registration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31761—Patterning strategy
- H01J2237/31764—Dividing into sub-patterns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31761—Patterning strategy
- H01J2237/31766—Continuous moving of wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31776—Shaped beam
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/068,602 US4818885A (en) | 1987-06-30 | 1987-06-30 | Electron beam writing method and system using large range deflection in combination with a continuously moving table |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3878751D1 true DE3878751D1 (de) | 1993-04-08 |
DE3878751T2 DE3878751T2 (de) | 1993-09-23 |
Family
ID=22083585
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8888107078T Expired - Fee Related DE3878751T2 (de) | 1987-06-30 | 1988-05-03 | Verfahren zur elektronenstrahlaufzeichnung und system in verbindung mit kontinuierlich verschiebbarem tisch unter verwendung von gross-bereichsablenkung. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4818885A (de) |
EP (1) | EP0297247B1 (de) |
JP (1) | JP2725020B2 (de) |
DE (1) | DE3878751T2 (de) |
Families Citing this family (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01102930A (ja) * | 1987-10-16 | 1989-04-20 | Hitachi Ltd | 電子線描画装置 |
JP2614884B2 (ja) * | 1988-02-04 | 1997-05-28 | 富士通株式会社 | 電子ビーム露光方法及びその装置 |
US4943730A (en) * | 1988-09-19 | 1990-07-24 | Jeol Ltd. | Charged particle beam lithography method |
DE3908931A1 (de) * | 1989-03-18 | 1990-09-20 | Huels Chemische Werke Ag | In der kaelte schlagzaehe thermoplastische formmassen |
JP3148353B2 (ja) * | 1991-05-30 | 2001-03-19 | ケーエルエー・インストルメンツ・コーポレーション | 電子ビーム検査方法とそのシステム |
JP2591548B2 (ja) * | 1991-07-26 | 1997-03-19 | 富士通株式会社 | 荷電粒子線露光装置及び荷電粒子線露光方法 |
US5329130A (en) * | 1991-08-06 | 1994-07-12 | Fujitsu Limited | Charged particle beam exposure method and apparatus |
JPH05206017A (ja) * | 1991-08-09 | 1993-08-13 | Internatl Business Mach Corp <Ibm> | リソグラフイ露光システム及びその方法 |
JP2708300B2 (ja) * | 1991-10-21 | 1998-02-04 | 株式会社日立製作所 | 電子線描画方法 |
US5304441A (en) * | 1992-12-31 | 1994-04-19 | International Business Machines Corporation | Method of optimizing exposure of photoresist by patterning as a function of thermal modeling |
US5345085A (en) * | 1993-03-26 | 1994-09-06 | Etec Systems, Inc. | Method and structure for electronically measuring beam parameters |
US5466904A (en) * | 1993-12-23 | 1995-11-14 | International Business Machines Corporation | Electron beam lithography system |
US5546319A (en) * | 1994-01-28 | 1996-08-13 | Fujitsu Limited | Method of and system for charged particle beam exposure |
JPH07263308A (ja) * | 1994-03-18 | 1995-10-13 | Fujitsu Ltd | 電子ビーム露光方法及び装置 |
FR2738370B1 (fr) * | 1995-09-06 | 1997-11-07 | France Telecom | Installation pour l'echange d'informations a distance entre un objet portatif passif et une station, objet et station correspondants |
US5892237A (en) * | 1996-03-15 | 1999-04-06 | Fujitsu Limited | Charged particle beam exposure method and apparatus |
US6274290B1 (en) * | 1997-01-28 | 2001-08-14 | Etec Systems, Inc. | Raster scan gaussian beam writing strategy and method for pattern generation |
DE19745953C2 (de) * | 1997-10-17 | 2002-12-05 | Anatoli Stobbe | Diebstahl-Sicherungssystem sowie Verfahren zur automatischen Detektion und Identifikation eines Warensicherungsetiketts durch eine Basisstation |
US6320345B1 (en) | 1998-03-05 | 2001-11-20 | Nikon Corporation | Command trajectory for driving a stage with minimal vibration |
US6145438A (en) * | 1998-03-20 | 2000-11-14 | Berglund; C. Neil | Method and apparatus for direct writing of semiconductor die using microcolumn array |
US6008610A (en) * | 1998-03-20 | 1999-12-28 | Nikon Corporation | Position control apparatus for fine stages carried by a coarse stage on a high-precision scanning positioning system |
US6260282B1 (en) | 1998-03-27 | 2001-07-17 | Nikon Corporation | Stage control with reduced synchronization error and settling time |
US6177218B1 (en) | 1998-08-07 | 2001-01-23 | Lucent Technologies Inc. | Lithographic process for device fabrication using electron beam imaging |
US6287735B2 (en) | 1998-09-16 | 2001-09-11 | Nikon Corporation | Method and apparatus for controlling the leveling table of a wafer stage |
US6259106B1 (en) * | 1999-01-06 | 2001-07-10 | Etec Systems, Inc. | Apparatus and method for controlling a beam shape |
US6437347B1 (en) | 1999-04-13 | 2002-08-20 | International Business Machines Corporation | Target locking system for electron beam lithography |
DE102004058967B4 (de) * | 2004-12-08 | 2010-03-18 | Vistec Electron Beam Gmbh | Verfahren zur Belichtung eines Substrats mit einem Strahl |
US7115866B1 (en) * | 2005-04-28 | 2006-10-03 | Kla-Tencor Technologies, Inc. | Site stepping for electron beam micro analysis |
JP4520426B2 (ja) * | 2005-07-04 | 2010-08-04 | 株式会社ニューフレアテクノロジー | 電子ビームのビームドリフト補正方法及び電子ビームの描画方法 |
US7205237B2 (en) * | 2005-07-05 | 2007-04-17 | International Business Machines Corporation | Apparatus and method for selected site backside unlayering of si, GaAs, GaxAlyAszof SOI technologies for scanning probe microscopy and atomic force probing characterization |
KR101359562B1 (ko) | 2005-07-08 | 2014-02-07 | 넥스젠 세미 홀딩 인코포레이티드 | 제어 입자 빔 제조를 위한 장치 및 방법 |
US7368207B2 (en) * | 2006-03-31 | 2008-05-06 | Eastman Kodak Company | Dynamic compensation system for maskless lithography |
WO2008140585A1 (en) | 2006-11-22 | 2008-11-20 | Nexgen Semi Holding, Inc. | Apparatus and method for conformal mask manufacturing |
US10991545B2 (en) | 2008-06-30 | 2021-04-27 | Nexgen Semi Holding, Inc. | Method and device for spatial charged particle bunching |
US10566169B1 (en) | 2008-06-30 | 2020-02-18 | Nexgen Semi Holding, Inc. | Method and device for spatial charged particle bunching |
US7901850B2 (en) | 2008-09-01 | 2011-03-08 | D2S, Inc. | Method and system for design of a reticle to be manufactured using variable shaped beam lithography |
US20120219886A1 (en) | 2011-02-28 | 2012-08-30 | D2S, Inc. | Method and system for forming patterns using charged particle beam lithography with variable pattern dosage |
US8473875B2 (en) | 2010-10-13 | 2013-06-25 | D2S, Inc. | Method and system for forming high accuracy patterns using charged particle beam lithography |
US8057970B2 (en) | 2008-09-01 | 2011-11-15 | D2S, Inc. | Method and system for forming circular patterns on a surface |
US8039176B2 (en) | 2009-08-26 | 2011-10-18 | D2S, Inc. | Method for fracturing and forming a pattern using curvilinear characters with charged particle beam lithography |
US9341936B2 (en) | 2008-09-01 | 2016-05-17 | D2S, Inc. | Method and system for forming a pattern on a reticle using charged particle beam lithography |
US8669023B2 (en) | 2008-09-01 | 2014-03-11 | D2S, Inc. | Method for optical proximity correction of a reticle to be manufactured using shaped beam lithography |
US9323140B2 (en) | 2008-09-01 | 2016-04-26 | D2S, Inc. | Method and system for forming a pattern on a reticle using charged particle beam lithography |
TWI496182B (zh) * | 2009-08-26 | 2015-08-11 | D2S Inc | 以可變束模糊技術使用帶電粒子束微影術製造表面之方法及系統 |
US20120278770A1 (en) | 2011-04-26 | 2012-11-01 | D2S, Inc. | Method and system for forming non-manhattan patterns using variable shaped beam lithography |
US9448473B2 (en) | 2009-08-26 | 2016-09-20 | D2S, Inc. | Method for fracturing and forming a pattern using shaped beam charged particle beam lithography |
US9164372B2 (en) | 2009-08-26 | 2015-10-20 | D2S, Inc. | Method and system for forming non-manhattan patterns using variable shaped beam lithography |
US20110089345A1 (en) * | 2009-10-21 | 2011-04-21 | D2S, Inc. | Method and system for manufacturing a surface using charged particle beam lithography |
US9612530B2 (en) | 2011-02-28 | 2017-04-04 | D2S, Inc. | Method and system for design of enhanced edge slope patterns for charged particle beam lithography |
US9057956B2 (en) | 2011-02-28 | 2015-06-16 | D2S, Inc. | Method and system for design of enhanced edge slope patterns for charged particle beam lithography |
US8719739B2 (en) | 2011-09-19 | 2014-05-06 | D2S, Inc. | Method and system for forming patterns using charged particle beam lithography |
KR20150001834A (ko) | 2012-04-18 | 2015-01-06 | 디2에스, 인코포레이티드 | 하전 입자 빔 리소그래피를 사용한 임계 치수 균일성을 위한 방법 및 시스템 |
US9343267B2 (en) | 2012-04-18 | 2016-05-17 | D2S, Inc. | Method and system for dimensional uniformity using charged particle beam lithography |
KR102657067B1 (ko) * | 2016-07-07 | 2024-04-16 | 삼성전자주식회사 | 하전 입자 빔 노광 방법 및 보정 방법 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US31630A (en) * | 1861-03-05 | Press | ||
US3900736A (en) * | 1974-01-28 | 1975-08-19 | Ibm | Method and apparatus for positioning a beam of charged particles |
US3900737A (en) * | 1974-04-18 | 1975-08-19 | Bell Telephone Labor Inc | Electron beam exposure system |
US4063103A (en) * | 1975-04-11 | 1977-12-13 | Tokyo Shibaura Electric Co., Ltd. | Electron beam exposure apparatus |
JPS5283177A (en) * | 1975-12-31 | 1977-07-11 | Fujitsu Ltd | Electron beam exposure device |
US4494004A (en) * | 1980-11-28 | 1985-01-15 | International Business Machines Corporation | Electron beam system |
JPS58200536A (ja) * | 1982-05-18 | 1983-11-22 | Nippon Telegr & Teleph Corp <Ntt> | 荷電ビ−ム露光装置におけるマ−ク検出方式 |
JPS593923A (ja) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | 電子ビ−ム露光方法 |
US4477729A (en) * | 1982-10-01 | 1984-10-16 | International Business Machines Corporation | Continuously writing electron beam stitched pattern exposure system |
US4544846A (en) * | 1983-06-28 | 1985-10-01 | International Business Machines Corporation | Variable axis immersion lens electron beam projection system |
JPS6042826A (ja) * | 1983-08-19 | 1985-03-07 | Nippon Telegr & Teleph Corp <Ntt> | 荷電ビ−ム露光方法 |
JPS60196941A (ja) * | 1984-02-29 | 1985-10-05 | Fujitsu Ltd | 電子線露光方法 |
JPS61267320A (ja) * | 1985-05-21 | 1986-11-26 | Toshiba Corp | 荷電ビ−ム露光方法 |
-
1987
- 1987-06-30 US US07/068,602 patent/US4818885A/en not_active Expired - Lifetime
-
1988
- 1988-05-03 EP EP88107078A patent/EP0297247B1/de not_active Expired - Lifetime
- 1988-05-03 DE DE8888107078T patent/DE3878751T2/de not_active Expired - Fee Related
- 1988-05-19 JP JP63120826A patent/JP2725020B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE3878751T2 (de) | 1993-09-23 |
US4818885A (en) | 1989-04-04 |
EP0297247A1 (de) | 1989-01-04 |
JPS6411328A (en) | 1989-01-13 |
EP0297247B1 (de) | 1993-03-03 |
JP2725020B2 (ja) | 1998-03-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |