DE3878751D1 - Verfahren zur elektronenstrahlaufzeichnung und system in verbindung mit kontinuierlich verschiebbarem tisch unter verwendung von gross-bereichsablenkung. - Google Patents

Verfahren zur elektronenstrahlaufzeichnung und system in verbindung mit kontinuierlich verschiebbarem tisch unter verwendung von gross-bereichsablenkung.

Info

Publication number
DE3878751D1
DE3878751D1 DE8888107078T DE3878751T DE3878751D1 DE 3878751 D1 DE3878751 D1 DE 3878751D1 DE 8888107078 T DE8888107078 T DE 8888107078T DE 3878751 T DE3878751 T DE 3878751T DE 3878751 D1 DE3878751 D1 DE 3878751D1
Authority
DE
Germany
Prior art keywords
connection
electron beam
large area
sliding table
beam recording
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888107078T
Other languages
English (en)
Other versions
DE3878751T2 (de
Inventor
Donald Eugene Davis
Samuel Kay Doran
Merlyn Harold Perkins
Hans Christian Pfeiffer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3878751D1 publication Critical patent/DE3878751D1/de
Publication of DE3878751T2 publication Critical patent/DE3878751T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/103—Lenses characterised by lens type
    • H01J2237/1035—Immersion lens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration
    • H01J2237/30438—Registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31764—Dividing into sub-patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31766—Continuous moving of wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE8888107078T 1987-06-30 1988-05-03 Verfahren zur elektronenstrahlaufzeichnung und system in verbindung mit kontinuierlich verschiebbarem tisch unter verwendung von gross-bereichsablenkung. Expired - Fee Related DE3878751T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/068,602 US4818885A (en) 1987-06-30 1987-06-30 Electron beam writing method and system using large range deflection in combination with a continuously moving table

Publications (2)

Publication Number Publication Date
DE3878751D1 true DE3878751D1 (de) 1993-04-08
DE3878751T2 DE3878751T2 (de) 1993-09-23

Family

ID=22083585

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888107078T Expired - Fee Related DE3878751T2 (de) 1987-06-30 1988-05-03 Verfahren zur elektronenstrahlaufzeichnung und system in verbindung mit kontinuierlich verschiebbarem tisch unter verwendung von gross-bereichsablenkung.

Country Status (4)

Country Link
US (1) US4818885A (de)
EP (1) EP0297247B1 (de)
JP (1) JP2725020B2 (de)
DE (1) DE3878751T2 (de)

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JPH01102930A (ja) * 1987-10-16 1989-04-20 Hitachi Ltd 電子線描画装置
JP2614884B2 (ja) * 1988-02-04 1997-05-28 富士通株式会社 電子ビーム露光方法及びその装置
US4943730A (en) * 1988-09-19 1990-07-24 Jeol Ltd. Charged particle beam lithography method
DE3908931A1 (de) * 1989-03-18 1990-09-20 Huels Chemische Werke Ag In der kaelte schlagzaehe thermoplastische formmassen
JP3148353B2 (ja) * 1991-05-30 2001-03-19 ケーエルエー・インストルメンツ・コーポレーション 電子ビーム検査方法とそのシステム
JP2591548B2 (ja) * 1991-07-26 1997-03-19 富士通株式会社 荷電粒子線露光装置及び荷電粒子線露光方法
US5329130A (en) * 1991-08-06 1994-07-12 Fujitsu Limited Charged particle beam exposure method and apparatus
JPH05206017A (ja) * 1991-08-09 1993-08-13 Internatl Business Mach Corp <Ibm> リソグラフイ露光システム及びその方法
JP2708300B2 (ja) * 1991-10-21 1998-02-04 株式会社日立製作所 電子線描画方法
US5304441A (en) * 1992-12-31 1994-04-19 International Business Machines Corporation Method of optimizing exposure of photoresist by patterning as a function of thermal modeling
US5345085A (en) * 1993-03-26 1994-09-06 Etec Systems, Inc. Method and structure for electronically measuring beam parameters
US5466904A (en) * 1993-12-23 1995-11-14 International Business Machines Corporation Electron beam lithography system
US5546319A (en) * 1994-01-28 1996-08-13 Fujitsu Limited Method of and system for charged particle beam exposure
JPH07263308A (ja) * 1994-03-18 1995-10-13 Fujitsu Ltd 電子ビーム露光方法及び装置
FR2738370B1 (fr) * 1995-09-06 1997-11-07 France Telecom Installation pour l'echange d'informations a distance entre un objet portatif passif et une station, objet et station correspondants
US5892237A (en) * 1996-03-15 1999-04-06 Fujitsu Limited Charged particle beam exposure method and apparatus
US6274290B1 (en) * 1997-01-28 2001-08-14 Etec Systems, Inc. Raster scan gaussian beam writing strategy and method for pattern generation
DE19745953C2 (de) * 1997-10-17 2002-12-05 Anatoli Stobbe Diebstahl-Sicherungssystem sowie Verfahren zur automatischen Detektion und Identifikation eines Warensicherungsetiketts durch eine Basisstation
US6320345B1 (en) 1998-03-05 2001-11-20 Nikon Corporation Command trajectory for driving a stage with minimal vibration
US6145438A (en) * 1998-03-20 2000-11-14 Berglund; C. Neil Method and apparatus for direct writing of semiconductor die using microcolumn array
US6008610A (en) * 1998-03-20 1999-12-28 Nikon Corporation Position control apparatus for fine stages carried by a coarse stage on a high-precision scanning positioning system
US6260282B1 (en) 1998-03-27 2001-07-17 Nikon Corporation Stage control with reduced synchronization error and settling time
US6177218B1 (en) 1998-08-07 2001-01-23 Lucent Technologies Inc. Lithographic process for device fabrication using electron beam imaging
US6287735B2 (en) 1998-09-16 2001-09-11 Nikon Corporation Method and apparatus for controlling the leveling table of a wafer stage
US6259106B1 (en) * 1999-01-06 2001-07-10 Etec Systems, Inc. Apparatus and method for controlling a beam shape
US6437347B1 (en) 1999-04-13 2002-08-20 International Business Machines Corporation Target locking system for electron beam lithography
DE102004058967B4 (de) * 2004-12-08 2010-03-18 Vistec Electron Beam Gmbh Verfahren zur Belichtung eines Substrats mit einem Strahl
US7115866B1 (en) * 2005-04-28 2006-10-03 Kla-Tencor Technologies, Inc. Site stepping for electron beam micro analysis
JP4520426B2 (ja) * 2005-07-04 2010-08-04 株式会社ニューフレアテクノロジー 電子ビームのビームドリフト補正方法及び電子ビームの描画方法
US7205237B2 (en) * 2005-07-05 2007-04-17 International Business Machines Corporation Apparatus and method for selected site backside unlayering of si, GaAs, GaxAlyAszof SOI technologies for scanning probe microscopy and atomic force probing characterization
KR101359562B1 (ko) 2005-07-08 2014-02-07 넥스젠 세미 홀딩 인코포레이티드 제어 입자 빔 제조를 위한 장치 및 방법
US7368207B2 (en) * 2006-03-31 2008-05-06 Eastman Kodak Company Dynamic compensation system for maskless lithography
WO2008140585A1 (en) 2006-11-22 2008-11-20 Nexgen Semi Holding, Inc. Apparatus and method for conformal mask manufacturing
US10991545B2 (en) 2008-06-30 2021-04-27 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
US10566169B1 (en) 2008-06-30 2020-02-18 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
US7901850B2 (en) 2008-09-01 2011-03-08 D2S, Inc. Method and system for design of a reticle to be manufactured using variable shaped beam lithography
US20120219886A1 (en) 2011-02-28 2012-08-30 D2S, Inc. Method and system for forming patterns using charged particle beam lithography with variable pattern dosage
US8473875B2 (en) 2010-10-13 2013-06-25 D2S, Inc. Method and system for forming high accuracy patterns using charged particle beam lithography
US8057970B2 (en) 2008-09-01 2011-11-15 D2S, Inc. Method and system for forming circular patterns on a surface
US8039176B2 (en) 2009-08-26 2011-10-18 D2S, Inc. Method for fracturing and forming a pattern using curvilinear characters with charged particle beam lithography
US9341936B2 (en) 2008-09-01 2016-05-17 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US8669023B2 (en) 2008-09-01 2014-03-11 D2S, Inc. Method for optical proximity correction of a reticle to be manufactured using shaped beam lithography
US9323140B2 (en) 2008-09-01 2016-04-26 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
TWI496182B (zh) * 2009-08-26 2015-08-11 D2S Inc 以可變束模糊技術使用帶電粒子束微影術製造表面之方法及系統
US20120278770A1 (en) 2011-04-26 2012-11-01 D2S, Inc. Method and system for forming non-manhattan patterns using variable shaped beam lithography
US9448473B2 (en) 2009-08-26 2016-09-20 D2S, Inc. Method for fracturing and forming a pattern using shaped beam charged particle beam lithography
US9164372B2 (en) 2009-08-26 2015-10-20 D2S, Inc. Method and system for forming non-manhattan patterns using variable shaped beam lithography
US20110089345A1 (en) * 2009-10-21 2011-04-21 D2S, Inc. Method and system for manufacturing a surface using charged particle beam lithography
US9612530B2 (en) 2011-02-28 2017-04-04 D2S, Inc. Method and system for design of enhanced edge slope patterns for charged particle beam lithography
US9057956B2 (en) 2011-02-28 2015-06-16 D2S, Inc. Method and system for design of enhanced edge slope patterns for charged particle beam lithography
US8719739B2 (en) 2011-09-19 2014-05-06 D2S, Inc. Method and system for forming patterns using charged particle beam lithography
KR20150001834A (ko) 2012-04-18 2015-01-06 디2에스, 인코포레이티드 하전 입자 빔 리소그래피를 사용한 임계 치수 균일성을 위한 방법 및 시스템
US9343267B2 (en) 2012-04-18 2016-05-17 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography
KR102657067B1 (ko) * 2016-07-07 2024-04-16 삼성전자주식회사 하전 입자 빔 노광 방법 및 보정 방법

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Also Published As

Publication number Publication date
DE3878751T2 (de) 1993-09-23
US4818885A (en) 1989-04-04
EP0297247A1 (de) 1989-01-04
JPS6411328A (en) 1989-01-13
EP0297247B1 (de) 1993-03-03
JP2725020B2 (ja) 1998-03-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee