DE3873250T2 - Verfahren und anlage zur herstellung duenner schichten mittels eines plasmas fuer elektronische bzw. opto-elektronische anwendungen. - Google Patents

Verfahren und anlage zur herstellung duenner schichten mittels eines plasmas fuer elektronische bzw. opto-elektronische anwendungen.

Info

Publication number
DE3873250T2
DE3873250T2 DE8888402570T DE3873250T DE3873250T2 DE 3873250 T2 DE3873250 T2 DE 3873250T2 DE 8888402570 T DE8888402570 T DE 8888402570T DE 3873250 T DE3873250 T DE 3873250T DE 3873250 T2 DE3873250 T2 DE 3873250T2
Authority
DE
Germany
Prior art keywords
electronic
thin layers
production
plasma
opto
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8888402570T
Other languages
English (en)
Other versions
DE3873250D1 (de
Inventor
Jacques Schmitt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OC Oerlikon Balzers AG
Original Assignee
Solems SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solems SA filed Critical Solems SA
Application granted granted Critical
Publication of DE3873250D1 publication Critical patent/DE3873250D1/de
Publication of DE3873250T2 publication Critical patent/DE3873250T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Inorganic Insulating Materials (AREA)
  • Photovoltaic Devices (AREA)
DE8888402570T 1987-10-15 1988-10-11 Verfahren und anlage zur herstellung duenner schichten mittels eines plasmas fuer elektronische bzw. opto-elektronische anwendungen. Expired - Lifetime DE3873250T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8714245A FR2621930B1 (fr) 1987-10-15 1987-10-15 Procede et appareil pour la production par plasma de couches minces a usage electronique et/ou optoelectronique

Publications (2)

Publication Number Publication Date
DE3873250D1 DE3873250D1 (de) 1992-09-03
DE3873250T2 true DE3873250T2 (de) 1993-03-11

Family

ID=9355852

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888402570T Expired - Lifetime DE3873250T2 (de) 1987-10-15 1988-10-11 Verfahren und anlage zur herstellung duenner schichten mittels eines plasmas fuer elektronische bzw. opto-elektronische anwendungen.

Country Status (6)

Country Link
US (1) US4989543A (de)
EP (1) EP0312447B1 (de)
JP (1) JP2905855B2 (de)
AT (1) ATE78880T1 (de)
DE (1) DE3873250T2 (de)
FR (1) FR2621930B1 (de)

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US5204144A (en) * 1991-05-10 1993-04-20 Celestech, Inc. Method for plasma deposition on apertured substrates
FR2677043B1 (fr) * 1991-05-29 1993-12-24 Solems Procede, dispositif et appareil pour traiter un substrat par un plasma basse pression.
JPH0811718B2 (ja) * 1992-02-27 1996-02-07 大同ほくさん株式会社 ガスソース分子線エピタキシー装置
EP0563748B1 (de) * 1992-03-30 1997-06-18 Matsushita Electric Industrial Co., Ltd. Verfahren zur Herstellung eines Überzuges durch chemische Abscheidung aus der Dampfphase mittels Plasma
JP3164248B2 (ja) * 1992-06-11 2001-05-08 東京エレクトロン株式会社 熱処理装置
CH687987A5 (de) * 1993-05-03 1997-04-15 Balzers Hochvakuum Verfahren zur Erhoehung der Beschichtungsrate in einem Plasmaentladungsraum und Plasmakammer.
US6296735B1 (en) 1993-05-03 2001-10-02 Unaxis Balzers Aktiengesellschaft Plasma treatment apparatus and method for operation same
CH687986A5 (de) * 1993-05-03 1997-04-15 Balzers Hochvakuum Plasmabehandlungsanlage und Verfahren zu deren Betrieb.
JP3146112B2 (ja) * 1993-12-24 2001-03-12 シャープ株式会社 プラズマｃｖｄ装置
US5789851A (en) * 1995-12-15 1998-08-04 Balzers Aktiengesellschaft Field emission device
US6173672B1 (en) 1997-06-06 2001-01-16 Celestech, Inc. Diamond film deposition on substrate arrays
US6406760B1 (en) 1996-06-10 2002-06-18 Celestech, Inc. Diamond film deposition on substrate arrays
DE19701696C2 (de) * 1997-01-20 1999-02-18 Fraunhofer Ges Forschung Vorrichtung und Verfahren zur Beschichtung eines Substrates mittels eines chemischen Gasphasenabscheideverfahrens
US6432203B1 (en) * 1997-03-17 2002-08-13 Applied Komatsu Technology, Inc. Heated and cooled vacuum chamber shield
US6688375B1 (en) 1997-10-14 2004-02-10 Applied Materials, Inc. Vacuum processing system having improved substrate heating and cooling
US6517303B1 (en) 1998-05-20 2003-02-11 Applied Komatsu Technology, Inc. Substrate transfer shuttle
US6215897B1 (en) 1998-05-20 2001-04-10 Applied Komatsu Technology, Inc. Automated substrate processing system
US6086362A (en) 1998-05-20 2000-07-11 Applied Komatsu Technology, Inc. Multi-function chamber for a substrate processing system
US6213704B1 (en) 1998-05-20 2001-04-10 Applied Komatsu Technology, Inc. Method and apparatus for substrate transfer and processing
US6206176B1 (en) 1998-05-20 2001-03-27 Applied Komatsu Technology, Inc. Substrate transfer shuttle having a magnetic drive
JP2000243747A (ja) * 1999-02-18 2000-09-08 Kokusai Electric Co Ltd 基板処理装置
US6298685B1 (en) 1999-11-03 2001-10-09 Applied Materials, Inc. Consecutive deposition system
US6949143B1 (en) * 1999-12-15 2005-09-27 Applied Materials, Inc. Dual substrate loadlock process equipment
JP2004523880A (ja) * 2000-09-15 2004-08-05 アプライド　マテリアルズ　インコーポレイテッド 処理装置用ダブル二重スロット式ロードロック
US7316966B2 (en) * 2001-09-21 2008-01-08 Applied Materials, Inc. Method for transferring substrates in a load lock chamber
US7207766B2 (en) * 2003-10-20 2007-04-24 Applied Materials, Inc. Load lock chamber for large area substrate processing system
US7497414B2 (en) * 2004-06-14 2009-03-03 Applied Materials, Inc. Curved slit valve door with flexible coupling
ATE391339T1 (de) * 2004-11-24 2008-04-15 Oc Oerlikon Balzers Ag Vakuumbehandlungskammer für sehr grossflächige substrate
GB0510051D0 (en) * 2005-05-17 2005-06-22 Forticrete Ltd Interlocking roof tiles
US20060273815A1 (en) * 2005-06-06 2006-12-07 Applied Materials, Inc. Substrate support with integrated prober drive
US20070006936A1 (en) * 2005-07-07 2007-01-11 Applied Materials, Inc. Load lock chamber with substrate temperature regulation
US7845891B2 (en) * 2006-01-13 2010-12-07 Applied Materials, Inc. Decoupled chamber body
US7665951B2 (en) * 2006-06-02 2010-02-23 Applied Materials, Inc. Multiple slot load lock chamber and method of operation
US7845618B2 (en) 2006-06-28 2010-12-07 Applied Materials, Inc. Valve door with ball coupling
US8124907B2 (en) * 2006-08-04 2012-02-28 Applied Materials, Inc. Load lock chamber with decoupled slit valve door seal compartment
WO2008030047A1 (en) * 2006-09-06 2008-03-13 Seoul National University Industry Foundation Apparatus and method of depositing films using bias and charging behavior of nanoparticles formed during chemical vapor deposition
US20080251019A1 (en) * 2007-04-12 2008-10-16 Sriram Krishnaswami System and method for transferring a substrate into and out of a reduced volume chamber accommodating multiple substrates
DE102007022431A1 (de) 2007-05-09 2008-11-13 Leybold Optics Gmbh Behandlungssystem für flache Substrate
JP5026397B2 (ja) * 2007-11-27 2012-09-12 株式会社半導体エネルギー研究所 成膜装置及び成膜方法
DE102009020436A1 (de) 2008-11-04 2010-09-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur Plasmabehandlung eines flachen Substrats
WO2012027858A1 (en) 2010-09-03 2012-03-08 Oerlikon Solar Ag, Trübbach Control of differential pressure in pecvd systems
WO2012156062A1 (de) 2011-05-13 2012-11-22 Leybold Optics Gmbh Verfahren zur plasmabehandlung eines substrats in einer plasmavorrichtung
WO2013102577A1 (en) 2012-01-04 2013-07-11 Tel Solar Ag Heat transfer control in pecvd systems
EP2654070A1 (de) 2012-04-16 2013-10-23 INDEOtec SA Kapazitiv gekoppelter Plasmareaktor für Dünnfilmablagerung
CN103382553B (zh) * 2012-05-03 2016-08-03 理想能源设备(上海)有限公司 处理系统的降温方法
JP6303733B2 (ja) * 2014-03-31 2018-04-04 ソニー株式会社 磁気記録媒体およびその製造方法、ならびに成膜装置
WO2018142179A1 (en) * 2017-02-02 2018-08-09 C4E Technology Gmbh Apparatus for applying a deposition onto a substrate by a deposition process and method for carrying out a deposition process by use of such an apparatus

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US4047496A (en) * 1974-05-31 1977-09-13 Applied Materials, Inc. Epitaxial radiation heated reactor
JPS55110033A (en) * 1979-02-19 1980-08-25 Fujitsu Ltd Epitaxial layer-growing device
JPS567436A (en) * 1979-06-29 1981-01-26 Sony Corp High pressure treating device
JPS5753939A (ja) * 1980-09-17 1982-03-31 Matsushita Electric Ind Co Ltd Hakumakunodoraietsuchinguhoho
JPS6010715A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd 化学気相成長装置
JPH0799735B2 (ja) * 1985-03-29 1995-10-25 株式会社東芝 減圧ｃｖｄ薄膜形成装置
JPS61291965A (ja) * 1985-06-18 1986-12-22 Fujitsu Ltd 超高真空チヤンバ−
FR2587729B1 (fr) * 1985-09-24 1988-12-23 Centre Nat Rech Scient Procede et dispositif de traitement chimique, notamment de traitement thermochimique et de depot chimique dans un plasma homogene de grand volume
FR2589168B1 (fr) * 1985-10-25 1992-07-17 Solems Sa Appareil et son procede d'utilisation pour la formation de films minces assistee par plasma
FR2594119B1 (fr) * 1986-02-10 1988-06-03 Europ Propulsion Installation pour l'infiltration chimique en phase vapeur d'un materiau refractaire autre que le carbone

Also Published As

Publication number Publication date
FR2621930B1 (fr) 1990-02-02
ATE78880T1 (de) 1992-08-15
EP0312447A1 (de) 1989-04-19
EP0312447B1 (de) 1992-07-29
FR2621930A1 (fr) 1989-04-21
JPH027421A (ja) 1990-01-11
JP2905855B2 (ja) 1999-06-14
DE3873250D1 (de) 1992-09-03
US4989543A (en) 1991-02-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: BALZERS AG, BALZERS, LI

8328 Change in the person/name/address of the agent

Free format text: DERZEIT KEIN VERTRETER BESTELLT