EP0312447A1 - Verfahren und Anlage zur Herstellung dünner Schichten mittels eines Plasmas für elektronische bzw. opto-elektronische Anwendungen - Google Patents

Verfahren und Anlage zur Herstellung dünner Schichten mittels eines Plasmas für elektronische bzw. opto-elektronische Anwendungen Download PDF

Info

Publication number
EP0312447A1
EP0312447A1 EP88402570A EP88402570A EP0312447A1 EP 0312447 A1 EP0312447 A1 EP 0312447A1 EP 88402570 A EP88402570 A EP 88402570A EP 88402570 A EP88402570 A EP 88402570A EP 0312447 A1 EP0312447 A1 EP 0312447A1
Authority
EP
European Patent Office
Prior art keywords
enclosure
chamber
layers
plasma
walls
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP88402570A
Other languages
English (en)
French (fr)
Other versions
EP0312447B1 (de
Inventor
Jacques Schmitt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Solems Sa Dite Ste
Solems SA
Original Assignee
Solems Sa Dite Ste
Solems SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solems Sa Dite Ste, Solems SA filed Critical Solems Sa Dite Ste
Priority to AT88402570T priority Critical patent/ATE78880T1/de
Publication of EP0312447A1 publication Critical patent/EP0312447A1/de
Application granted granted Critical
Publication of EP0312447B1 publication Critical patent/EP0312447B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles

Definitions

  • the invention relates to a method for operating an apparatus intended for producing all kinds of thin layers for electronic and / or optoelectronic use, such as in particular amorphous or crystalline semiconductor thin layers, using a plasma deposition process. .
  • the invention also relates to the device itself.
  • apparatuses of this category comprising: - an enclosure in which there is a pressure below atmospheric pressure, means for creating a plasma zone in the enclosure, these means comprising at least one electrode connected to a source of electrical power, at least one substrate and means for introducing reactive gases into the plasma zone, means for evacuating to the outside of the enclosure a residual part of the reactive gases after stay in the plasma zone, - And a sealed chamber in which is housed said enclosure and where there is a pressure lower than that of the enclosure.
  • this deposition zone also called plasma zone
  • the surface "decomposition”, or degassing, of the components of the device near this deposition zone could alter the electronic properties of the semiconductors, this situation being aggravated by the fact in fact "semi-sealed" of the inner reaction chamber whose substrate carrier plates on which the substrates are mounted, simply come to bear, in a non-sealed manner, towards their peripheral end, on side walls of the enclosure, which side walls are connected, in leaktight manner, to front and rear closure walls of this same enclosure, themselves connected, also in leaktight manner, to the reactive gas inlet conduits respectively and for evacuating the non-deposited residual part of these same gases.
  • the impurities present in the chamber cannot penetrate into the enclosure, in particular at critical moments, namely during the layer deposition phase.
  • the heating of the interior enclosure will advantageously be accompanied by maintaining the walls of the sealed outer chamber at a temperature of the order of 80 ° C, at most.
  • heating means which may be arranged in the intermediate space separating the sealed outer chamber enclosure.
  • the UHV technique provides for drying the whole machine, which must be able to be subjected to a vacuum of less than 10, up to 250 ° C. or even 450 ° C. ⁇ 5 Pa (regularly around 10 ⁇ 7 Pa).
  • the apparatus for producing amorphous layers which operates according to a plasma deposition process is generally of the same type as that described in the aforementioned French application FR-A-2,589,168 to which we can refer.
  • This device therefore comprises a sealed outer chamber 2 which can withstand a partial vacuum of approximately 10 ⁇ 4 to 10 ⁇ 5 Pa.
  • a relatively elongated enclosure 3 In this enclosure, a double plasma zone 4, 4 ′ can be created between a central electrode 5 and two substrates 7 and 7 ′.
  • the electrode 5 extends substantially in the general axis 6 of the enclosure and is connected by its head 5 ′ to a high voltage source. Plates 17, 17 ′ substrate holders on which the substrates 7, 7 ′ are mounted, bear towards their periphery at 17a, 17′a, respectively, on the side walls 13, 23 of the enclosure, which are connected in a sealed manner at the front 33 and rear 43 closing walls onto which also open in a sealed manner, ducts 8 and 11 respectively.
  • the substrates are here directed substantially parallel to each other and face the plasma zone.
  • the conduit 8 which opens at the rear longitudinal end of the enclosure after having passed 12 in leaktight manner through the wall of the chamber 2, supplies the plasma zone with reactive gases for producing the layers.
  • FIG. 1 the front and rear sides of the enclosure have been identified by the letters AV and AR, with reference to the circulation of reactive gases in the apparatus, as shown diagrammatically by arrow 9.
  • the reactive gases meet on their way a first constriction 10, or distributor, intended to improve the distribution of the gases in the enclosure.
  • the non-deposited residual part is evacuated towards the outside of the enclosure by the conduit 11 which is connected to the enclosure towards its front longitudinal end and which crosses in a sealed manner, at 22, the wall of the chamber 2.
  • a pump such as a vacuum pump, can be used to suck up the residual material to be evacuated.
  • the material for producing the layers will be a support, in general a gas, admitted at a pressure of approximately 101 Pa which will supply the plasma regions with the elementary constituents, which, after decomposition of the support by electrical discharge, will come deposit on the substrates in the form of thin films.
  • a support in general a gas, admitted at a pressure of approximately 101 Pa which will supply the plasma regions with the elementary constituents, which, after decomposition of the support by electrical discharge, will come deposit on the substrates in the form of thin films.
  • silicon tetrafluoride and silane could be used as a production material layers of silicon.
  • different types of dopants could be retained.
  • the invention provides in particular to raise the temperature of the enclosure by means such as resistors in the form of a ramp housed in the intermediate space 18 which separates the chamber enclosure.
  • resistors 16 are connected to suitable electrical sources and their supply wires marked 16 ′ pass through chamber 2 in a sealed manner.
  • the selected heating elements must be able to bring the walls of the enclosure 3 to a temperature between approximately 100 and 300 ° C. during the phase of depositing the films on the substrates.
  • the temperature range will in fact be between approximately 150 and 250 ° C.
  • the upper limit may be exceeded. In fact, the more the enclosure is heated (without, of course, going so far as to damage it by overheating), the more the degassing flow harmful to the electronic quality of the semiconductors in formation will decrease.
  • Such preheating of the enclosure will in particular ensure surface stripping further limiting the subsequent degassing of the walls.
  • the conduit 11 for discharging residual materials is itself heated by resistors 20, always preferably at a temperature between 150 and 250 °. C approx.
  • the preferred solution has been in the invention and as illustrated in the figures, to cover most, if not all, of the interior face of the walls of the chamber 2 by heat screens 19.
  • These screens may in particular be made of polished aluminum and have their face of "mirror" directed towards the interior of the room.
  • cooling means for the walls of the chamber could complement the thermal screen, or even replace it.
  • the leakage rate at the junction between the substrate holders and enclosure walls should be less than about 10 ⁇ 3 m3 / s, and preferably be below about 0.3.10 ⁇ 3 m3 / s. This corresponds substantially to the leakage rate authorized by a slit approximately 3 m long by 10 ⁇ 2 m deep and 50 ⁇ m (50 x 10 ⁇ 5 m) thick.
  • the substrate holders must be able to be replaced. Their mobility is therefore necessary.
  • the device is, in a conventional manner, provided with two airlocks 28, 29.
  • These airlocks are arranged against the wall of the chamber 2 and each comprise, as known per se, a share a first access door, respectively 28a and 29a, which allows the airlock to communicate with the outside and, secondly, a second access door, respectively 28b, 29b which allows the airlock to communicate with the interior of room 2. Thanks to these airlock, the establishment and removal of the substrate holders can be carried out under the best conditions.
  • mechanical vacuum conveyors (not shown) transport the substrate holders and allow either to recover the substrates on which the films are deposited, or to introduce and place the substrates in the enclosure " virgins ".
  • the bellows 30 are connected to conduits 31 sealingly passing through the wall of the chamber 2 and which are themselves connected to pressurizing means, such as one or more air compressors 32 allowing d '' act if necessary independently on each bellows, for example by means of regulation valves 34.
  • the enclosure 3 opens, towards its front longitudinal end directly into the interior volume of the chamber 2. There is no longer a conduit 11 for discharging the residual material towards the exterior of the chamber.
  • the vacuum duct 15 in this case draws in not only the degassing flows from the walls of the enclosure and from the chamber, but also the residual materials which circulate in said enclosure.
  • FIG. 2 also shows a means for adjusting the throttle 14 leaving the enclosure.
  • This is a shutter 21 in the form of a truncated cone which can engage on bearing surfaces 26 of cooperating shape formed in a part 27 fixed towards the front end of the enclosure.
  • An operating rod 24 extends the shutter 21 towards the outside of the chamber, the wall of which it crosses at 25 in a sealed manner.
  • other adjustment means such as valve devices that can be operated from outside the chamber, for example by a control linkage, could have been envisaged. It is easy to understand that these same means could also have been provided for adjusting the inlet throttle 10 in the enclosure and that, of course, the embodiment of FIG. 1 could also have benefited from the implementation of such means.
  • the enclosure 3 is here provided on the side of its end where it opens on the discharge duct 11, with a solenoid valve 35 whose valve 36 with adjustable opening is placed under the control of a control unit 37 to which it is connected by a cable 38.
  • the morphology of the semiconductor layers can be, depending on the deposition conditions and the nature of the substrate. - amorphous - microcrystalline - monocrystalline (epitaxy)
  • the filler gases are organometallic, volatile fluorides or even metalcarbonyls.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Inorganic Insulating Materials (AREA)
  • Photovoltaic Devices (AREA)
EP88402570A 1987-10-15 1988-10-11 Verfahren und Anlage zur Herstellung dünner Schichten mittels eines Plasmas für elektronische bzw. opto-elektronische Anwendungen Expired - Lifetime EP0312447B1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AT88402570T ATE78880T1 (de) 1987-10-15 1988-10-11 Verfahren und anlage zur herstellung duenner schichten mittels eines plasmas fuer elektronische bzw. opto-elektronische anwendungen.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8714245 1987-10-15
FR8714245A FR2621930B1 (fr) 1987-10-15 1987-10-15 Procede et appareil pour la production par plasma de couches minces a usage electronique et/ou optoelectronique

Publications (2)

Publication Number Publication Date
EP0312447A1 true EP0312447A1 (de) 1989-04-19
EP0312447B1 EP0312447B1 (de) 1992-07-29

Family

ID=9355852

Family Applications (1)

Application Number Title Priority Date Filing Date
EP88402570A Expired - Lifetime EP0312447B1 (de) 1987-10-15 1988-10-11 Verfahren und Anlage zur Herstellung dünner Schichten mittels eines Plasmas für elektronische bzw. opto-elektronische Anwendungen

Country Status (6)

Country Link
US (1) US4989543A (de)
EP (1) EP0312447B1 (de)
JP (1) JP2905855B2 (de)
AT (1) ATE78880T1 (de)
DE (1) DE3873250T2 (de)
FR (1) FR2621930B1 (de)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0563748A2 (de) * 1992-03-30 1993-10-06 Matsushita Electric Industrial Co., Ltd. Verfahren zur Herstellung eines Überzuges durch chemische Abscheidung aus der Dampfphase mittels Plasma
DE4412915B4 (de) * 1993-05-03 2005-12-15 Unaxis Balzers Ag Plasmabehandlungsanlage, Verfahren zu deren Betrieb und Verwendung derselben
DE4412902B4 (de) * 1993-05-03 2007-02-08 Oc Oerlikon Balzers Ag Verfahren zur plasmaunterstützten, chemischen Dampfabscheidung und Vakuumplasmakammer
DE102009020436A1 (de) 2008-11-04 2010-09-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur Plasmabehandlung eines flachen Substrats

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5258206A (en) * 1989-01-13 1993-11-02 Idemitsu Petrochemical Co., Ltd. Method and apparatus for producing diamond thin films
US5284521A (en) * 1990-09-21 1994-02-08 Anelva Corporation Vacuum film forming apparatus
EP0492159B1 (de) * 1990-12-24 1996-02-14 General Electric Company Verkleidung aus Metall zur Steigerung der Wachstumsgeschwindigkeit beim Aufdampfen von Diamant mittels CVD
US5204144A (en) * 1991-05-10 1993-04-20 Celestech, Inc. Method for plasma deposition on apertured substrates
FR2677043B1 (fr) * 1991-05-29 1993-12-24 Solems Procede, dispositif et appareil pour traiter un substrat par un plasma basse pression.
JPH0811718B2 (ja) * 1992-02-27 1996-02-07 大同ほくさん株式会社 ガスソース分子線エピタキシー装置
JP3164248B2 (ja) * 1992-06-11 2001-05-08 東京エレクトロン株式会社 熱処理装置
US6296735B1 (en) 1993-05-03 2001-10-02 Unaxis Balzers Aktiengesellschaft Plasma treatment apparatus and method for operation same
JP3146112B2 (ja) * 1993-12-24 2001-03-12 シャープ株式会社 プラズマｃｖｄ装置
US5789851A (en) * 1995-12-15 1998-08-04 Balzers Aktiengesellschaft Field emission device
US6406760B1 (en) 1996-06-10 2002-06-18 Celestech, Inc. Diamond film deposition on substrate arrays
US6173672B1 (en) 1997-06-06 2001-01-16 Celestech, Inc. Diamond film deposition on substrate arrays
DE19701696C2 (de) * 1997-01-20 1999-02-18 Fraunhofer Ges Forschung Vorrichtung und Verfahren zur Beschichtung eines Substrates mittels eines chemischen Gasphasenabscheideverfahrens
US6432203B1 (en) * 1997-03-17 2002-08-13 Applied Komatsu Technology, Inc. Heated and cooled vacuum chamber shield
US6688375B1 (en) 1997-10-14 2004-02-10 Applied Materials, Inc. Vacuum processing system having improved substrate heating and cooling
US6517303B1 (en) 1998-05-20 2003-02-11 Applied Komatsu Technology, Inc. Substrate transfer shuttle
US6215897B1 (en) 1998-05-20 2001-04-10 Applied Komatsu Technology, Inc. Automated substrate processing system
US6206176B1 (en) 1998-05-20 2001-03-27 Applied Komatsu Technology, Inc. Substrate transfer shuttle having a magnetic drive
US6086362A (en) * 1998-05-20 2000-07-11 Applied Komatsu Technology, Inc. Multi-function chamber for a substrate processing system
US6213704B1 (en) 1998-05-20 2001-04-10 Applied Komatsu Technology, Inc. Method and apparatus for substrate transfer and processing
JP2000243747A (ja) * 1999-02-18 2000-09-08 Kokusai Electric Co Ltd 基板処理装置
US6298685B1 (en) 1999-11-03 2001-10-09 Applied Materials, Inc. Consecutive deposition system
US6949143B1 (en) * 1999-12-15 2005-09-27 Applied Materials, Inc. Dual substrate loadlock process equipment
TW512421B (en) * 2000-09-15 2002-12-01 Applied Materials Inc Double dual slot load lock for process equipment
US7316966B2 (en) * 2001-09-21 2008-01-08 Applied Materials, Inc. Method for transferring substrates in a load lock chamber
US7207766B2 (en) * 2003-10-20 2007-04-24 Applied Materials, Inc. Load lock chamber for large area substrate processing system
US7497414B2 (en) * 2004-06-14 2009-03-03 Applied Materials, Inc. Curved slit valve door with flexible coupling
AU2005309226B2 (en) * 2004-11-24 2010-06-03 Oerlikon Solar Ag, Truebbach Vacuum processing chamber for very large area substrates
GB0510051D0 (en) * 2005-05-17 2005-06-22 Forticrete Ltd Interlocking roof tiles
US20060273815A1 (en) * 2005-06-06 2006-12-07 Applied Materials, Inc. Substrate support with integrated prober drive
US20070006936A1 (en) * 2005-07-07 2007-01-11 Applied Materials, Inc. Load lock chamber with substrate temperature regulation
US7845891B2 (en) * 2006-01-13 2010-12-07 Applied Materials, Inc. Decoupled chamber body
US7665951B2 (en) * 2006-06-02 2010-02-23 Applied Materials, Inc. Multiple slot load lock chamber and method of operation
US7845618B2 (en) 2006-06-28 2010-12-07 Applied Materials, Inc. Valve door with ball coupling
US8124907B2 (en) * 2006-08-04 2012-02-28 Applied Materials, Inc. Load lock chamber with decoupled slit valve door seal compartment
US20100183818A1 (en) * 2006-09-06 2010-07-22 Seoul National University Industry Foundation Apparatus and method of depositing films using bias and charging behavior of nanoparticles formed during chemical vapor deposition
US20080251019A1 (en) * 2007-04-12 2008-10-16 Sriram Krishnaswami System and method for transferring a substrate into and out of a reduced volume chamber accommodating multiple substrates
DE102007022431A1 (de) 2007-05-09 2008-11-13 Leybold Optics Gmbh Behandlungssystem für flache Substrate
JP5026397B2 (ja) * 2007-11-27 2012-09-12 株式会社半導体エネルギー研究所 成膜装置及び成膜方法
US20130216731A1 (en) * 2010-09-03 2013-08-22 Tel Solar Ag Control of differential pressure in pecvd systems
WO2012156062A1 (de) 2011-05-13 2012-11-22 Leybold Optics Gmbh Verfahren zur plasmabehandlung eines substrats in einer plasmavorrichtung
TW201339356A (zh) 2012-01-04 2013-10-01 Tel Solar Ag Ｐｅｃｖｄ系統的熱傳控制
EP2654070A1 (de) 2012-04-16 2013-10-23 INDEOtec SA Kapazitiv gekoppelter Plasmareaktor für Dünnfilmablagerung
CN103382553B (zh) * 2012-05-03 2016-08-03 理想能源设备(上海)有限公司 处理系统的降温方法
JP6303733B2 (ja) * 2014-03-31 2018-04-04 ソニー株式会社 磁気記録媒体およびその製造方法、ならびに成膜装置
WO2018142179A1 (en) * 2017-02-02 2018-08-09 C4E Technology Gmbh Apparatus for applying a deposition onto a substrate by a deposition process and method for carrying out a deposition process by use of such an apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987001738A1 (fr) * 1985-09-24 1987-03-26 Centre National De La Recherche Scientifique (Cnrs Procede et dispositif de traitement chimique, notamment de traitement thermochimique et de depot chimique dans un plasma homogene de grand volume
EP0221812A2 (de) * 1985-10-25 1987-05-13 SOLEMS S.A. Société dite: Vorrichtung und Verfahren zur Herstellung dünner Schichten durch Plasma
WO1987004733A1 (fr) * 1986-02-10 1987-08-13 Societe Europeenne De Propulsion Installation pour l'infiltration chimique en phase vapeur d'un materiau refractaire autre que le carbone

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE632675A (de) * 1962-05-24
US4047496A (en) * 1974-05-31 1977-09-13 Applied Materials, Inc. Epitaxial radiation heated reactor
JPS55110033A (en) * 1979-02-19 1980-08-25 Fujitsu Ltd Epitaxial layer-growing device
JPS567436A (en) * 1979-06-29 1981-01-26 Sony Corp High pressure treating device
JPS5753939A (ja) * 1980-09-17 1982-03-31 Matsushita Electric Ind Co Ltd Hakumakunodoraietsuchinguhoho
JPS6010715A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd 化学気相成長装置
JPH0799735B2 (ja) * 1985-03-29 1995-10-25 株式会社東芝 減圧ｃｖｄ薄膜形成装置
JPS61291965A (ja) * 1985-06-18 1986-12-22 Fujitsu Ltd 超高真空チヤンバ−

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987001738A1 (fr) * 1985-09-24 1987-03-26 Centre National De La Recherche Scientifique (Cnrs Procede et dispositif de traitement chimique, notamment de traitement thermochimique et de depot chimique dans un plasma homogene de grand volume
EP0221812A2 (de) * 1985-10-25 1987-05-13 SOLEMS S.A. Société dite: Vorrichtung und Verfahren zur Herstellung dünner Schichten durch Plasma
WO1987004733A1 (fr) * 1986-02-10 1987-08-13 Societe Europeenne De Propulsion Installation pour l'infiltration chimique en phase vapeur d'un materiau refractaire autre que le carbone

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0563748A2 (de) * 1992-03-30 1993-10-06 Matsushita Electric Industrial Co., Ltd. Verfahren zur Herstellung eines Überzuges durch chemische Abscheidung aus der Dampfphase mittels Plasma
EP0563748A3 (en) * 1992-03-30 1995-03-29 Matsushita Electric Ind Co Ltd Method of forming film by plasma cvd
DE4412915B4 (de) * 1993-05-03 2005-12-15 Unaxis Balzers Ag Plasmabehandlungsanlage, Verfahren zu deren Betrieb und Verwendung derselben
DE4412902B4 (de) * 1993-05-03 2007-02-08 Oc Oerlikon Balzers Ag Verfahren zur plasmaunterstützten, chemischen Dampfabscheidung und Vakuumplasmakammer
DE4447977B4 (de) * 1993-05-03 2009-09-10 Oc Oerlikon Balzers Ag Vorrichtung und Verfahren zur Plasmabehandlung von flachen Werkstücken, insbesondere flachen, aktiven Bildschirmen, sowie Verwendung der Vorrichtung
DE102009020436A1 (de) 2008-11-04 2010-09-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur Plasmabehandlung eines flachen Substrats

Also Published As

Publication number Publication date
DE3873250T2 (de) 1993-03-11
JP2905855B2 (ja) 1999-06-14
FR2621930A1 (fr) 1989-04-21
EP0312447B1 (de) 1992-07-29
DE3873250D1 (de) 1992-09-03
US4989543A (en) 1991-02-05
JPH027421A (ja) 1990-01-11
ATE78880T1 (de) 1992-08-15
FR2621930B1 (fr) 1990-02-02

Similar Documents

Publication Publication Date Title
EP0312447B1 (de) Verfahren und Anlage zur Herstellung dünner Schichten mittels eines Plasmas für elektronische bzw. opto-elektronische Anwendungen
EP0538092A1 (de) Chemischer Behandlungsreaktor in der Gasphase
EP0259414B1 (de) Vorrichtung zur thermischen behandlung dünner körper wie siliziumdioxid-wafer
FR2628985A1 (fr) Reacteur d'epitaxie a paroi protegee contre les depots
FR2668301A1 (fr) Procede et installation de transfert sans contamination.
FR2705104A1 (fr) Procédé pour augmenter la vitesse de revêtement, procédé pour réduire la densité de poussière dans un espace de décharge de plasma, et chambre à plasma.
FR2579910A1 (de)
FR2560528A1 (fr) Appareil de traitement sous vide
EP1049813B1 (de) Cvd-reaktor und verfahren zum betrieb desselben
FR2502643A1 (fr) Appareil et procede de depot par jet moleculaire sur plusieurs substrats
US5478400A (en) Apparatus for fabricating semiconductor devices
EP0371065B1 (de) Reaktor zur oberflächenbeschichtung oder -behandlung
FR2549452A1 (fr) Sas a vide avec des porte-objets pour introduire des objets dans des enceintes a vide et les faire sortir de celles-ci
EP1348039A2 (de) Vorrichtung, in der eine operation durchgeführt wird, die die kontrolle der atmosphäre in einer kammer erfordert
FR2678956A1 (fr) Dispositif et procede de depot de diamant par dcpv assiste par plasma microonde.
FR2511709A1 (fr) Procede pour obtenir un vide pousse dans l'enceinte d'un reacteur d'epitaxie par jets moleculaires et reacteur mettant en oeuvre ce procede
FR2704240A1 (fr) Installation de revêtement sous vide.
FR2540892A1 (fr) Procede et dispositif de chauffage de substrat pour l'epitaxie par jet moleculaire
FR2714210A1 (fr) Dispositif d'évacuation.
EP0815284B1 (de) Verfahren und vorrichtung zur doppelseitigen plasma bechichtung eines substrats
EP0743377A1 (de) Vorrichtung zur chemischen Oberflächenbehandlung eines flachen Substrates mittels aktiver Gase
JP2009299173A (ja) 真空装置
FR2688344A1 (fr) Procede de fabrication d'un dispositif a semiconducteur, d'un compose ii-vi comprenant du mercure.
EP0758691A1 (de) Verfahren zum Ätzen eines Substrats durch chemische Strahlen
EP0182681B1 (de) Oxidationsofen für Halbleiterplättchen

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE CH DE ES FR GB GR IT LI LU NL SE

17P Request for examination filed

Effective date: 19890818

17Q First examination report despatched

Effective date: 19910111

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AT BE CH DE ES FR GB GR IT LI LU NL SE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRE;WARNING: LAPSES OF ITALIAN PATENTS WITH EFFECTIVE DATE BEFORE 2007 MAY HAVE OCCURRED AT ANY TIME BEFORE 2007. THE CORRECT EFFECTIVE DATE MAY BE DIFFERENT FROM THE ONE RECORDED.SCRIBED TIME-LIMIT

Effective date: 19920729

Ref country code: NL

Effective date: 19920729

Ref country code: SE

Effective date: 19920729

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 19920729

Ref country code: AT

Effective date: 19920729

Ref country code: ES

Free format text: THE PATENT HAS BEEN ANNULLED BY A DECISION OF A NATIONAL AUTHORITY

Effective date: 19920729

REF Corresponds to:

Ref document number: 78880

Country of ref document: AT

Date of ref document: 19920815

Kind code of ref document: T

REF Corresponds to:

Ref document number: 3873250

Country of ref document: DE

Date of ref document: 19920903

GBT Gb: translation of ep patent filed (gb section 77(6)(a)/1977)
PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BE

Effective date: 19921031

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 19921031

NLV1 Nl: lapsed or annulled due to failure to fulfill the requirements of art. 29p and 29m of the patents act
BERE Be: lapsed

Owner name: S.A. SOLEMS

Effective date: 19921031

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
REG Reference to a national code

Ref country code: GB

Ref legal event code: IF02

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20071004

Year of fee payment: 20

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20071010

Year of fee payment: 20

Ref country code: FR

Payment date: 20071009

Year of fee payment: 20

Ref country code: CH

Payment date: 20080115

Year of fee payment: 20

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

REG Reference to a national code

Ref country code: GB

Ref legal event code: PE20

Expiry date: 20081010

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF EXPIRATION OF PROTECTION

Effective date: 20081010