DE3856075D1 - Verfahren zur herstellung dünner einzelkristallsiliciuminseln auf einem isolator - Google Patents
Verfahren zur herstellung dünner einzelkristallsiliciuminseln auf einem isolatorInfo
- Publication number
- DE3856075D1 DE3856075D1 DE3856075T DE3856075T DE3856075D1 DE 3856075 D1 DE3856075 D1 DE 3856075D1 DE 3856075 T DE3856075 T DE 3856075T DE 3856075 T DE3856075 T DE 3856075T DE 3856075 D1 DE3856075 D1 DE 3856075D1
- Authority
- DE
- Germany
- Prior art keywords
- isolator
- single crystal
- crystal silicon
- thin single
- producing thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76275—Vertical isolation by bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76281—Lateral isolation by selective oxidation of silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/012—Bonding, e.g. electrostatic for strain gauges
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/135—Removal of substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/924—To facilitate selective etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/97—Specified etch stop material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US731287A | 1987-01-27 | 1987-01-27 | |
US07/147,892 US5086011A (en) | 1987-01-27 | 1988-01-25 | Process for producing thin single crystal silicon islands on insulator |
PCT/US1988/000241 WO1988005600A1 (en) | 1987-01-27 | 1988-01-26 | Process for producing thin single crystal silicon islands on insulator |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3856075D1 true DE3856075D1 (de) | 1998-01-08 |
DE3856075T2 DE3856075T2 (de) | 1998-12-24 |
Family
ID=26676819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3856075T Expired - Fee Related DE3856075T2 (de) | 1987-01-27 | 1988-01-26 | Verfahren zur herstellung dünner einzelkristallsiliciuminseln auf einem isolator |
Country Status (6)
Country | Link |
---|---|
US (1) | US5086011A (de) |
EP (1) | EP0299062B1 (de) |
JP (1) | JP2717979B2 (de) |
AT (1) | ATE160651T1 (de) |
DE (1) | DE3856075T2 (de) |
WO (1) | WO1988005600A1 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01248524A (ja) * | 1988-03-30 | 1989-10-04 | Hitachi Ltd | 半導体装置とその製造方法 |
JPH03296247A (ja) * | 1990-04-13 | 1991-12-26 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US5395788A (en) * | 1991-03-15 | 1995-03-07 | Shin Etsu Handotai Co., Ltd. | Method of producing semiconductor substrate |
US5344785A (en) * | 1992-03-13 | 1994-09-06 | United Technologies Corporation | Method of forming high speed, high voltage fully isolated bipolar transistors on a SOI substrate |
US5234868A (en) * | 1992-10-29 | 1993-08-10 | International Business Machines Corporation | Method for determining planarization endpoint during chemical-mechanical polishing |
US5264395A (en) * | 1992-12-16 | 1993-11-23 | International Business Machines Corporation | Thin SOI layer for fully depleted field effect transistors |
US5441591A (en) * | 1993-06-07 | 1995-08-15 | The United States Of America As Represented By The Secretary Of The Navy | Silicon to sapphire bond |
US5399231A (en) * | 1993-10-18 | 1995-03-21 | Regents Of The University Of California | Method of forming crystalline silicon devices on glass |
US5500279A (en) * | 1994-08-26 | 1996-03-19 | Eastman Kodak Company | Laminated metal structure and metod of making same |
US5591300A (en) * | 1995-06-07 | 1997-01-07 | Vtc Inc. | Single crystal silicon dry-etch endpoint based on dopant-dependent and thermally-assisted etch rates |
US6649977B1 (en) | 1995-09-11 | 2003-11-18 | The Regents Of The University Of California | Silicon on insulator self-aligned transistors |
US5681775A (en) * | 1995-11-15 | 1997-10-28 | International Business Machines Corporation | Soi fabrication process |
US5672242A (en) * | 1996-01-31 | 1997-09-30 | Integrated Device Technology, Inc. | High selectivity nitride to oxide etch process |
US6093331A (en) * | 1997-12-11 | 2000-07-25 | Advanced Micro Devices, Inc. | Backside silicon removal for face down chip analysis |
US6428718B1 (en) | 1999-08-26 | 2002-08-06 | Advanced Micro Devices, Inc. | Selective back side wet etch |
US6294395B1 (en) | 1999-08-26 | 2001-09-25 | Advanced Micro Devices, Inc. | Back side reactive ion etch |
US6355564B1 (en) | 1999-08-26 | 2002-03-12 | Advanced Micro Devices, Inc. | Selective back side reactive ion etch |
US6555891B1 (en) | 2000-10-17 | 2003-04-29 | International Business Machines Corporation | SOI hybrid structure with selective epitaxial growth of silicon |
US6838294B2 (en) * | 2002-02-13 | 2005-01-04 | Intel Corporation | Focused ion beam visual endpointing |
JP2004103600A (ja) * | 2002-09-04 | 2004-04-02 | Canon Inc | 基板及びその製造方法 |
TWI242796B (en) * | 2002-09-04 | 2005-11-01 | Canon Kk | Substrate and manufacturing method therefor |
JP2004103855A (ja) * | 2002-09-10 | 2004-04-02 | Canon Inc | 基板及びその製造方法 |
JP2004103946A (ja) * | 2002-09-11 | 2004-04-02 | Canon Inc | 基板及びその製造方法 |
FR2852143B1 (fr) * | 2003-03-04 | 2005-10-14 | Soitec Silicon On Insulator | Procede de traitement preventif de la couronne d'une tranche multicouche |
KR100487927B1 (ko) * | 2003-07-21 | 2005-05-09 | 주식회사 하이닉스반도체 | 마그네틱 램의 형성방법 |
US7547605B2 (en) * | 2004-11-22 | 2009-06-16 | Taiwan Semiconductor Manufacturing Company | Microelectronic device and a method for its manufacture |
US20230056416A1 (en) * | 2021-08-23 | 2023-02-23 | Palo Alto Research Center Incorporated | Process of transferring of vcsel epi layer onto metal host substrate |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3769562A (en) * | 1972-02-07 | 1973-10-30 | Texas Instruments Inc | Double isolation for electronic devices |
US3909332A (en) * | 1973-06-04 | 1975-09-30 | Gen Electric | Bonding process for dielectric isolation of single crystal semiconductor structures |
JPS5066185A (de) * | 1973-10-12 | 1975-06-04 | ||
FR2262406B1 (de) * | 1974-02-26 | 1982-02-19 | Rodriguez Valentin | |
US3997381A (en) * | 1975-01-10 | 1976-12-14 | Intel Corporation | Method of manufacture of an epitaxial semiconductor layer on an insulating substrate |
US3974006A (en) * | 1975-03-21 | 1976-08-10 | Valentin Rodriguez | Method of obtaining high temperature resistant assemblies comprising isolated silicon islands bonded to a substrate |
JPS58151027A (ja) * | 1982-03-03 | 1983-09-08 | Hitachi Ltd | エツチング方法 |
JPS60262438A (ja) * | 1984-06-08 | 1985-12-25 | Matsushita Electronics Corp | 半導体装置の製造方法 |
JPH0671043B2 (ja) * | 1984-08-31 | 1994-09-07 | 株式会社東芝 | シリコン結晶体構造の製造方法 |
JPS6173345A (ja) * | 1984-09-19 | 1986-04-15 | Toshiba Corp | 半導体装置 |
US4599247A (en) * | 1985-01-04 | 1986-07-08 | Texas Instruments Incorporated | Semiconductor processing facility for providing enhanced oxidation rate |
JPS61289643A (ja) * | 1985-06-18 | 1986-12-19 | Matsushita Electric Ind Co Ltd | 半導体集積回路装置の製造方法 |
JPS61290737A (ja) * | 1985-06-19 | 1986-12-20 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
US4648936A (en) * | 1985-10-11 | 1987-03-10 | The United States Of America As Represented By The United States Department Of Energy | Dopant type and/or concentration selective dry photochemical etching of semiconductor materials |
US4691779A (en) * | 1986-01-17 | 1987-09-08 | Halliburton Company | Hydrostatic referenced safety-circulating valve |
-
1988
- 1988-01-25 US US07/147,892 patent/US5086011A/en not_active Expired - Fee Related
- 1988-01-26 EP EP88902997A patent/EP0299062B1/de not_active Expired - Lifetime
- 1988-01-26 AT AT88902997T patent/ATE160651T1/de not_active IP Right Cessation
- 1988-01-26 WO PCT/US1988/000241 patent/WO1988005600A1/en active IP Right Grant
- 1988-01-26 JP JP63502952A patent/JP2717979B2/ja not_active Expired - Fee Related
- 1988-01-26 DE DE3856075T patent/DE3856075T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO1988005600A1 (en) | 1988-07-28 |
ATE160651T1 (de) | 1997-12-15 |
EP0299062B1 (de) | 1997-11-26 |
EP0299062A1 (de) | 1989-01-18 |
EP0299062A4 (en) | 1991-03-20 |
DE3856075T2 (de) | 1998-12-24 |
US5086011A (en) | 1992-02-04 |
JPH01503026A (ja) | 1989-10-12 |
JP2717979B2 (ja) | 1998-02-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |