DE3855252D1 - Verfahren zum Herstellen eines Twin-well-BICMOS-Transistors - Google Patents
Verfahren zum Herstellen eines Twin-well-BICMOS-TransistorsInfo
- Publication number
- DE3855252D1 DE3855252D1 DE3855252T DE3855252T DE3855252D1 DE 3855252 D1 DE3855252 D1 DE 3855252D1 DE 3855252 T DE3855252 T DE 3855252T DE 3855252 T DE3855252 T DE 3855252T DE 3855252 D1 DE3855252 D1 DE 3855252D1
- Authority
- DE
- Germany
- Prior art keywords
- twin
- manufacturing
- bicmos transistor
- well
- well bicmos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8248—Combination of bipolar and field-effect technology
- H01L21/8249—Bipolar and MOS technology
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12927187A | 1987-12-07 | 1987-12-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3855252D1 true DE3855252D1 (de) | 1996-06-05 |
DE3855252T2 DE3855252T2 (de) | 1996-08-14 |
Family
ID=22439213
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3855252T Expired - Fee Related DE3855252T2 (de) | 1987-12-07 | 1988-12-06 | Verfahren zum Herstellen eines Twin-well-BICMOS-Transistors |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0320217B1 (de) |
JP (1) | JPH022156A (de) |
KR (1) | KR0140715B1 (de) |
DE (1) | DE3855252T2 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5047357A (en) * | 1989-02-03 | 1991-09-10 | Texas Instruments Incorporated | Method for forming emitters in a BiCMOS process |
US5171702A (en) * | 1989-07-21 | 1992-12-15 | Texas Instruments Incorporated | Method for forming a thick base oxide in a BiCMOS process |
EP0409041B1 (de) * | 1989-07-21 | 1995-10-11 | Texas Instruments Incorporated | Methode zur Bildung eines dicken Basis-Oxids bei BICMOS-Prozessen |
US5079177A (en) * | 1989-09-19 | 1992-01-07 | National Semiconductor Corporation | Process for fabricating high performance bicmos circuits |
IT1237666B (it) * | 1989-10-31 | 1993-06-15 | Sgs Thomson Microelectronics | Processo per la fabbricazione di un componente limitatore della tensione di programmazione e stabilizzatore di tensione incorporato inun dispositivo elettrico con celle di memoria eeprom |
EP0545363A1 (de) * | 1991-12-06 | 1993-06-09 | National Semiconductor Corporation | Herstellungsverfahren für eine integrierte Schaltung und Struktur |
EP0849791A1 (de) * | 1996-12-20 | 1998-06-24 | Texas Instruments Incorporated | Verbesserungen an oder in Bezug auf Halbleiteranordnungen |
FR2758004B1 (fr) * | 1996-12-27 | 1999-03-05 | Sgs Thomson Microelectronics | Transistor bipolaire a isolement dielectrique |
JPH11214533A (ja) * | 1998-01-29 | 1999-08-06 | Nec Corp | 半導体装置の製造方法 |
US7700405B2 (en) * | 2007-02-28 | 2010-04-20 | Freescale Semiconductor, Inc. | Microelectronic assembly with improved isolation voltage performance and a method for forming the same |
CN112786538B (zh) * | 2021-01-15 | 2023-05-19 | 深圳市汇芯通信技术有限公司 | 一种基于GaN HEMT的开关集成芯片与制作方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58159365A (ja) * | 1982-03-17 | 1983-09-21 | Nec Corp | 半導体集積回路の製造方法 |
JPS58225663A (ja) * | 1982-06-23 | 1983-12-27 | Toshiba Corp | 半導体装置の製造方法 |
US4637125A (en) * | 1983-09-22 | 1987-01-20 | Kabushiki Kaisha Toshiba | Method for making a semiconductor integrated device including bipolar transistor and CMOS transistor |
JPS60123052A (ja) * | 1983-12-07 | 1985-07-01 | Hitachi Ltd | 半導体装置 |
DE3474883D1 (en) * | 1984-01-16 | 1988-12-01 | Texas Instruments Inc | Integrated circuit having bipolar and field effect devices and method of fabrication |
JPS60217657A (ja) * | 1984-04-12 | 1985-10-31 | Mitsubishi Electric Corp | 半導体集積回路装置の製造方法 |
US4604790A (en) * | 1985-04-01 | 1986-08-12 | Advanced Micro Devices, Inc. | Method of fabricating integrated circuit structure having CMOS and bipolar devices |
US4929992A (en) * | 1985-09-18 | 1990-05-29 | Advanced Micro Devices, Inc. | MOS transistor construction with self aligned silicided contacts to gate, source, and drain regions |
-
1988
- 1988-12-06 KR KR1019880016214A patent/KR0140715B1/ko not_active IP Right Cessation
- 1988-12-06 EP EP88311554A patent/EP0320217B1/de not_active Expired - Lifetime
- 1988-12-06 JP JP63308697A patent/JPH022156A/ja active Pending
- 1988-12-06 DE DE3855252T patent/DE3855252T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0320217B1 (de) | 1996-05-01 |
EP0320217A2 (de) | 1989-06-14 |
DE3855252T2 (de) | 1996-08-14 |
EP0320217A3 (en) | 1989-11-23 |
JPH022156A (ja) | 1990-01-08 |
KR0140715B1 (ko) | 1998-07-15 |
KR890011104A (ko) | 1989-08-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |