DE3801526C2 - - Google Patents

Info

Publication number
DE3801526C2
DE3801526C2 DE3801526A DE3801526A DE3801526C2 DE 3801526 C2 DE3801526 C2 DE 3801526C2 DE 3801526 A DE3801526 A DE 3801526A DE 3801526 A DE3801526 A DE 3801526A DE 3801526 C2 DE3801526 C2 DE 3801526C2
Authority
DE
Germany
Prior art keywords
resistor
layer
mos transistor
transistor
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3801526A
Other languages
German (de)
English (en)
Other versions
DE3801526A1 (de
Inventor
Shigeru Mori
Michihiro Yamada
Hideshi Miyatake
Shuji Itami Hyogo Jp Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3801526A1 publication Critical patent/DE3801526A1/de
Application granted granted Critical
Publication of DE3801526C2 publication Critical patent/DE3801526C2/de
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/20Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/647Resistive arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE3801526A 1987-01-28 1988-01-20 Eingangsschutzeinrichtung fuer eine halbleitereinrichtung Granted DE3801526A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62019014A JPH0616558B2 (ja) 1987-01-28 1987-01-28 半導体装置の入力保護装置

Publications (2)

Publication Number Publication Date
DE3801526A1 DE3801526A1 (de) 1988-08-11
DE3801526C2 true DE3801526C2 (US20030199744A1-20031023-C00003.png) 1990-04-05

Family

ID=11987639

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3801526A Granted DE3801526A1 (de) 1987-01-28 1988-01-20 Eingangsschutzeinrichtung fuer eine halbleitereinrichtung

Country Status (3)

Country Link
US (1) US5019883A (US20030199744A1-20031023-C00003.png)
JP (1) JPH0616558B2 (US20030199744A1-20031023-C00003.png)
DE (1) DE3801526A1 (US20030199744A1-20031023-C00003.png)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5189638A (en) * 1990-04-26 1993-02-23 Mitsubishi Denki Kabushiki Kaisha Portable semiconductor memory device
KR930005184A (ko) * 1991-08-21 1993-03-23 김광호 정전기 전압 방지용 반도체 장치
KR950007572B1 (ko) * 1992-03-31 1995-07-12 삼성전자주식회사 Esd 보호장치
EP0623958B1 (de) * 1993-05-04 1998-04-01 Siemens Aktiengesellschaft Integrierte Halbleiterschaltung mit einem Schutzmittel
US5455444A (en) * 1994-04-22 1995-10-03 United Microelectronics Corporation Double polysilicon electrostatic discharge protection device for SRAM and DRAM memory devices
US5729419A (en) * 1995-11-20 1998-03-17 Integrated Device Technology, Inc. Changed device model electrostatic discharge protection circuit for output drivers and method of implementing same
JPH09293836A (ja) * 1996-04-25 1997-11-11 Rohm Co Ltd 半導体装置
US5969390A (en) * 1997-07-22 1999-10-19 Zilog, Inc. Layout solution for electromagnetic interference reduction
US6414341B1 (en) * 1998-09-25 2002-07-02 Nec Corporation Input/output protective device
JP2002313947A (ja) * 2001-04-12 2002-10-25 Fuji Electric Co Ltd 半導体装置
JP2009136339A (ja) 2007-12-03 2009-06-25 Mizuno Corp 野球またはソフトボール用捕球具
JP2014011176A (ja) * 2012-06-27 2014-01-20 Canon Inc 半導体装置の製造方法
JP6514949B2 (ja) * 2015-04-23 2019-05-15 日立オートモティブシステムズ株式会社 オンチップノイズ保護回路を有する半導体チップ

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54116887A (en) * 1978-03-02 1979-09-11 Nec Corp Mos type semiconductor device
JPS54136278A (en) * 1978-04-14 1979-10-23 Nec Corp Semiconductor device
JPS5598867A (en) * 1979-01-19 1980-07-28 Mitsubishi Electric Corp Protecting device
JPS5745975A (en) * 1980-09-02 1982-03-16 Nec Corp Input protecting device for semiconductor device
JPS57152160A (en) * 1981-03-13 1982-09-20 Mitsubishi Electric Corp Protective circuit for input
JP2507287B2 (ja) * 1981-06-10 1996-06-12 日本電気株式会社 半導体集積回路
JPS5812364A (ja) * 1981-07-15 1983-01-24 Toshiba Corp 入出力保護回路
JPS58123768A (ja) * 1982-01-18 1983-07-23 Toshiba Corp 入力保護装置
JPS60120569A (ja) * 1983-12-02 1985-06-28 Toshiba Corp 入力回路
JPS60246665A (ja) * 1984-05-22 1985-12-06 Nec Corp 入力保護装置
JPH0691196B2 (ja) * 1984-07-25 1994-11-14 株式会社日立製作所 半導体装置
JPS6173375A (ja) * 1984-09-19 1986-04-15 Hitachi Ltd 半導体集積回路装置
JPH0669080B2 (ja) * 1985-01-31 1994-08-31 株式会社東芝 半導体集積回路装置
JPS6290960A (ja) * 1985-10-16 1987-04-25 Mitsubishi Electric Corp 半導体装置

Also Published As

Publication number Publication date
JPH0616558B2 (ja) 1994-03-02
US5019883A (en) 1991-05-28
JPS63186474A (ja) 1988-08-02
DE3801526A1 (de) 1988-08-11

Similar Documents

Publication Publication Date Title
DE3586268T2 (de) Eingangs-schutzanordnung fuer vlsi-schaltungsanordnungen.
DE19518549C2 (de) MOS-Transistor getriggerte Schutzschaltung gegen elektrostatische Überspannungen von CMOS-Schaltungen
DE4423030C2 (de) Schutzschaltung gegen elektrostatische Entladung für eine Halbleitereinrichtung
DE2707744C2 (US20030199744A1-20031023-C00003.png)
DE19651247C2 (de) Eingabe/Ausgabeschutzschaltung
DE3801526C2 (US20030199744A1-20031023-C00003.png)
DE2257846B2 (de) Integrierte Halbleiteranordnung zum Schutz gegen Überspannung
DE2559360A1 (de) Halbleiterbauteil mit integrierten schaltkreisen
DE9209990U1 (de) Integrierte Schaltung mit MOS-Kondensator für verbesserten elektrostatischen Entladungsschutz
DE19654163B4 (de) Schutzvorrichtung für eine Halbleiterschaltung
DE3879850T2 (de) Eingangsschutzvorrichtung fuer eine halbleitervorrichtung.
DE2531846C2 (de) Schutzschaltungsanordnung für einen Isolierschicht-Feldeffekttransistor
EP0538507B1 (de) Schutzschaltung für Anschlusskontakte von monolithisch integrierten Schaltungen
DE3688034T2 (de) Vor elektrostatischen entladungen geschuetzte eingangsschaltung.
DE2707843B2 (de) Schutzschaltungsanordnung für einen Feldeffekttransistor
DE3784793T2 (de) Integrierte schaltung mit verbesserter schutzvorrichtung.
DE3741014C2 (de) Schutz integrierter Schaltkreise vor elektrostatischen Entladungen
DE3880661T2 (de) Eingangsschutzstruktur für integrierte Schaltung.
DE3131322A1 (de) Integrierte halbleiterschaltungsvorrichtung
DE68916192T2 (de) Ausgangspuffer einer integrierten Schaltung mit einem verbesserten ESD-Schutz.
DE19712834B4 (de) Schutzschaltung und Schaltung für eine Halbleiter-Auf-Isolator-Vorrichtung
DE3346518C1 (de) Feldeffekttransistor mit isolierter Gate-Elektrode
DE4341170C2 (de) ESD-Schutzstruktur für integrierte Schaltungen
DE19721322B4 (de) Elektrostatische Entladungsschutzeinrichtung
DE2758616A1 (de) Halbleiterbauelement

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Representative=s name: PRUFER & PARTNER GBR, 81545 MUENCHEN

8339 Ceased/non-payment of the annual fee