DE3789986T2 - Drei-Schichten-Resistverfahren für Photolithographie mit hohem Auflösungsvermögen. - Google Patents
Drei-Schichten-Resistverfahren für Photolithographie mit hohem Auflösungsvermögen.Info
- Publication number
- DE3789986T2 DE3789986T2 DE3789986T DE3789986T DE3789986T2 DE 3789986 T2 DE3789986 T2 DE 3789986T2 DE 3789986 T DE3789986 T DE 3789986T DE 3789986 T DE3789986 T DE 3789986T DE 3789986 T2 DE3789986 T2 DE 3789986T2
- Authority
- DE
- Germany
- Prior art keywords
- photolithography
- high resolution
- layer resist
- resist process
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/843,340 US4732841A (en) | 1986-03-24 | 1986-03-24 | Tri-level resist process for fine resolution photolithography |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3789986D1 DE3789986D1 (de) | 1994-07-14 |
DE3789986T2 true DE3789986T2 (de) | 1994-12-22 |
Family
ID=25289693
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3789986T Expired - Fee Related DE3789986T2 (de) | 1986-03-24 | 1987-03-24 | Drei-Schichten-Resistverfahren für Photolithographie mit hohem Auflösungsvermögen. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4732841A (de) |
EP (1) | EP0239488B1 (de) |
JP (1) | JPS62272535A (de) |
DE (1) | DE3789986T2 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4891303A (en) * | 1988-05-26 | 1990-01-02 | Texas Instruments Incorporated | Trilayer microlithographic process using a silicon-based resist as the middle layer |
JPH0812904B2 (ja) * | 1990-11-30 | 1996-02-07 | 三菱電機株式会社 | 固体撮像素子の製造方法 |
US5770350A (en) * | 1993-11-09 | 1998-06-23 | Lg Semicon Co. Ltd. | Method for forming pattern using multilayer resist |
US6420088B1 (en) | 2000-06-23 | 2002-07-16 | International Business Machines Corporation | Antireflective silicon-containing compositions as hardmask layer |
US6872506B2 (en) * | 2002-06-25 | 2005-03-29 | Brewer Science Inc. | Wet-developable anti-reflective compositions |
US6740469B2 (en) | 2002-06-25 | 2004-05-25 | Brewer Science Inc. | Developer-soluble metal alkoxide coatings for microelectronic applications |
JP5368674B2 (ja) * | 2003-10-15 | 2013-12-18 | ブルーワー サイエンス アイ エヌ シー. | 現像液に可溶な材料および現像液に可溶な材料をビアファーストデュアルダマシン適用において用いる方法 |
US20050255410A1 (en) * | 2004-04-29 | 2005-11-17 | Guerrero Douglas J | Anti-reflective coatings using vinyl ether crosslinkers |
US20070207406A1 (en) * | 2004-04-29 | 2007-09-06 | Guerrero Douglas J | Anti-reflective coatings using vinyl ether crosslinkers |
US7914974B2 (en) | 2006-08-18 | 2011-03-29 | Brewer Science Inc. | Anti-reflective imaging layer for multiple patterning process |
JP5570688B2 (ja) * | 2007-06-28 | 2014-08-13 | ピーエスフォー ルクスコ エスエイアールエル | 微細レジストパターン形成方法及びナノインプリントモールド構造 |
EP2245512B1 (de) * | 2008-01-29 | 2019-09-11 | Brewer Science, Inc. | On-track-prozess zur strukturierung einer hardmaske durch mehrere dunkelfeldbelichtungen |
US9640396B2 (en) * | 2009-01-07 | 2017-05-02 | Brewer Science Inc. | Spin-on spacer materials for double- and triple-patterning lithography |
US9176377B2 (en) | 2010-06-01 | 2015-11-03 | Inpria Corporation | Patterned inorganic layers, radiation based patterning compositions and corresponding methods |
WO2012118847A2 (en) | 2011-02-28 | 2012-09-07 | Inpria Corportion | Solution processible hardmarks for high resolusion lithography |
US8658050B2 (en) * | 2011-07-27 | 2014-02-25 | International Business Machines Corporation | Method to transfer lithographic patterns into inorganic substrates |
US9310684B2 (en) | 2013-08-22 | 2016-04-12 | Inpria Corporation | Organometallic solution based high resolution patterning compositions |
CN103456745B (zh) * | 2013-09-10 | 2016-09-07 | 北京京东方光电科技有限公司 | 一种阵列基板及其制备方法、显示装置 |
EP3889159B1 (de) | 2014-10-23 | 2024-06-05 | Inpria Corporation | Hochauflösende strukturierungszusammensetzung basierend auf einer organometallischen lösung |
EP4089482A1 (de) | 2015-10-13 | 2022-11-16 | Inpria Corporation | Organozinnoxidhydroxidstrukturierungszusammensetzungen, vorläufer und strukturierung |
US20230006165A1 (en) * | 2021-07-02 | 2023-01-05 | Avalon Holographics Inc. | Trilayer photoresist system and method for patterning organic devices |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4041190A (en) * | 1971-06-29 | 1977-08-09 | Thomson-Csf | Method for producing a silica mask on a semiconductor substrate |
JPS5316747B2 (de) * | 1973-06-13 | 1978-06-03 | ||
GB1451623A (en) * | 1973-10-01 | 1976-10-06 | Mullard Ltd | Method of prov8ding a patterned layer of silicon-containing oxide on a substrate |
US4004044A (en) * | 1975-05-09 | 1977-01-18 | International Business Machines Corporation | Method for forming patterned films utilizing a transparent lift-off mask |
US4253888A (en) * | 1978-06-16 | 1981-03-03 | Matsushita Electric Industrial Co., Ltd. | Pretreatment of photoresist masking layers resulting in higher temperature device processing |
US4202914A (en) * | 1978-12-29 | 1980-05-13 | International Business Machines Corporation | Method of depositing thin films of small dimensions utilizing silicon nitride lift-off mask |
US4222792A (en) * | 1979-09-10 | 1980-09-16 | International Business Machines Corporation | Planar deep oxide isolation process utilizing resin glass and E-beam exposure |
JPS57168247A (en) * | 1981-04-09 | 1982-10-16 | Fujitsu Ltd | Formation of negative pattern |
JPS58162041A (ja) * | 1982-03-19 | 1983-09-26 | Matsushita Electronics Corp | 薄膜形成方法 |
CA1204527A (en) * | 1982-08-13 | 1986-05-13 | Theodore F. Retajczyk, Jr. | Polymeric films for electronic circuits |
US4493855A (en) * | 1982-12-23 | 1985-01-15 | International Business Machines Corporation | Use of plasma polymerized organosilicon films in fabrication of lift-off masks |
US4599243A (en) * | 1982-12-23 | 1986-07-08 | International Business Machines Corporation | Use of plasma polymerized organosilicon films in fabrication of lift-off masks |
JPS59161827A (ja) * | 1983-03-04 | 1984-09-12 | Nippon Telegr & Teleph Corp <Ntt> | 絶縁膜加工法 |
US4507384A (en) * | 1983-04-18 | 1985-03-26 | Nippon Telegraph & Telephone Public Corporation | Pattern forming material and method for forming pattern therewith |
JPS6035727A (ja) * | 1983-08-08 | 1985-02-23 | Hitachi Chem Co Ltd | パタ−ンの製造法 |
JPS6057833A (ja) * | 1983-09-09 | 1985-04-03 | Nippon Telegr & Teleph Corp <Ntt> | レジスト材料 |
JPS6075320A (ja) * | 1983-10-03 | 1985-04-27 | Agency Of Ind Science & Technol | ガス選択透過性複合膜およびその製造方法 |
JPS60108842A (ja) * | 1983-11-18 | 1985-06-14 | Mitsubishi Electric Corp | 半導体装置の製法 |
US4524121A (en) * | 1983-11-21 | 1985-06-18 | Rohm And Haas Company | Positive photoresists containing preformed polyglutarimide polymer |
JPS60262150A (ja) * | 1984-06-11 | 1985-12-25 | Nippon Telegr & Teleph Corp <Ntt> | 三層レジスト用中間層材料及びそれを用いた三層レジストパタン形成方法 |
-
1986
- 1986-03-24 US US06/843,340 patent/US4732841A/en not_active Expired - Lifetime
-
1987
- 1987-03-23 JP JP62065914A patent/JPS62272535A/ja active Pending
- 1987-03-24 DE DE3789986T patent/DE3789986T2/de not_active Expired - Fee Related
- 1987-03-24 EP EP87400650A patent/EP0239488B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0239488A2 (de) | 1987-09-30 |
EP0239488A3 (en) | 1990-03-21 |
EP0239488B1 (de) | 1994-06-08 |
DE3789986D1 (de) | 1994-07-14 |
JPS62272535A (ja) | 1987-11-26 |
US4732841A (en) | 1988-03-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |