DE3789986D1 - Drei-Schichten-Resistverfahren für Photolithographie mit hohem Auflösungsvermögen. - Google Patents

Drei-Schichten-Resistverfahren für Photolithographie mit hohem Auflösungsvermögen.

Info

Publication number
DE3789986D1
DE3789986D1 DE3789986T DE3789986T DE3789986D1 DE 3789986 D1 DE3789986 D1 DE 3789986D1 DE 3789986 T DE3789986 T DE 3789986T DE 3789986 T DE3789986 T DE 3789986T DE 3789986 D1 DE3789986 D1 DE 3789986D1
Authority
DE
Germany
Prior art keywords
photolithography
high resolution
layer resist
resist process
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3789986T
Other languages
English (en)
Other versions
DE3789986T2 (de
Inventor
Kenneth J Radigan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Publication of DE3789986D1 publication Critical patent/DE3789986D1/de
Application granted granted Critical
Publication of DE3789986T2 publication Critical patent/DE3789986T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
DE3789986T 1986-03-24 1987-03-24 Drei-Schichten-Resistverfahren für Photolithographie mit hohem Auflösungsvermögen. Expired - Fee Related DE3789986T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/843,340 US4732841A (en) 1986-03-24 1986-03-24 Tri-level resist process for fine resolution photolithography

Publications (2)

Publication Number Publication Date
DE3789986D1 true DE3789986D1 (de) 1994-07-14
DE3789986T2 DE3789986T2 (de) 1994-12-22

Family

ID=25289693

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3789986T Expired - Fee Related DE3789986T2 (de) 1986-03-24 1987-03-24 Drei-Schichten-Resistverfahren für Photolithographie mit hohem Auflösungsvermögen.

Country Status (4)

Country Link
US (1) US4732841A (de)
EP (1) EP0239488B1 (de)
JP (1) JPS62272535A (de)
DE (1) DE3789986T2 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4891303A (en) * 1988-05-26 1990-01-02 Texas Instruments Incorporated Trilayer microlithographic process using a silicon-based resist as the middle layer
JPH0812904B2 (ja) * 1990-11-30 1996-02-07 三菱電機株式会社 固体撮像素子の製造方法
US5770350A (en) * 1993-11-09 1998-06-23 Lg Semicon Co. Ltd. Method for forming pattern using multilayer resist
US6420088B1 (en) 2000-06-23 2002-07-16 International Business Machines Corporation Antireflective silicon-containing compositions as hardmask layer
US6872506B2 (en) * 2002-06-25 2005-03-29 Brewer Science Inc. Wet-developable anti-reflective compositions
US6740469B2 (en) 2002-06-25 2004-05-25 Brewer Science Inc. Developer-soluble metal alkoxide coatings for microelectronic applications
KR101189397B1 (ko) * 2003-10-15 2012-10-11 브레우어 사이언스 인코포레이션 비아-퍼스트 듀얼 다마신 적용예에서 사용되는 현상제에 용해성인 물질 및 상기 물질 사용 방법
US20070207406A1 (en) * 2004-04-29 2007-09-06 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US20050255410A1 (en) * 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US7914974B2 (en) 2006-08-18 2011-03-29 Brewer Science Inc. Anti-reflective imaging layer for multiple patterning process
JP5570688B2 (ja) * 2007-06-28 2014-08-13 ピーエスフォー ルクスコ エスエイアールエル 微細レジストパターン形成方法及びナノインプリントモールド構造
EP2245512B1 (de) * 2008-01-29 2019-09-11 Brewer Science, Inc. On-track-prozess zur strukturierung einer hardmaske durch mehrere dunkelfeldbelichtungen
US9640396B2 (en) * 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
US9176377B2 (en) 2010-06-01 2015-11-03 Inpria Corporation Patterned inorganic layers, radiation based patterning compositions and corresponding methods
WO2012118847A2 (en) 2011-02-28 2012-09-07 Inpria Corportion Solution processible hardmarks for high resolusion lithography
US8658050B2 (en) * 2011-07-27 2014-02-25 International Business Machines Corporation Method to transfer lithographic patterns into inorganic substrates
US9310684B2 (en) 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
CN103456745B (zh) * 2013-09-10 2016-09-07 北京京东方光电科技有限公司 一种阵列基板及其制备方法、显示装置
KR102319630B1 (ko) 2014-10-23 2021-10-29 인프리아 코포레이션 유기 금속 용액 기반의 고해상도 패터닝 조성물 및 상응하는 방법
KR102204773B1 (ko) 2015-10-13 2021-01-18 인프리아 코포레이션 유기주석 옥사이드 하이드록사이드 패터닝 조성물, 전구체 및 패터닝
CN117917209A (zh) * 2021-07-02 2024-04-19 阿瓦龙全息照相技术股份公司 用于图案化有机器件的三层光致抗蚀剂系统和方法

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Publication number Priority date Publication date Assignee Title
US4041190A (en) * 1971-06-29 1977-08-09 Thomson-Csf Method for producing a silica mask on a semiconductor substrate
JPS5316747B2 (de) * 1973-06-13 1978-06-03
GB1451623A (en) * 1973-10-01 1976-10-06 Mullard Ltd Method of prov8ding a patterned layer of silicon-containing oxide on a substrate
US4004044A (en) * 1975-05-09 1977-01-18 International Business Machines Corporation Method for forming patterned films utilizing a transparent lift-off mask
US4253888A (en) * 1978-06-16 1981-03-03 Matsushita Electric Industrial Co., Ltd. Pretreatment of photoresist masking layers resulting in higher temperature device processing
US4202914A (en) * 1978-12-29 1980-05-13 International Business Machines Corporation Method of depositing thin films of small dimensions utilizing silicon nitride lift-off mask
US4222792A (en) * 1979-09-10 1980-09-16 International Business Machines Corporation Planar deep oxide isolation process utilizing resin glass and E-beam exposure
JPS57168247A (en) * 1981-04-09 1982-10-16 Fujitsu Ltd Formation of negative pattern
JPS58162041A (ja) * 1982-03-19 1983-09-26 Matsushita Electronics Corp 薄膜形成方法
CA1204527A (en) * 1982-08-13 1986-05-13 Theodore F. Retajczyk, Jr. Polymeric films for electronic circuits
US4599243A (en) * 1982-12-23 1986-07-08 International Business Machines Corporation Use of plasma polymerized organosilicon films in fabrication of lift-off masks
US4493855A (en) * 1982-12-23 1985-01-15 International Business Machines Corporation Use of plasma polymerized organosilicon films in fabrication of lift-off masks
JPS59161827A (ja) * 1983-03-04 1984-09-12 Nippon Telegr & Teleph Corp <Ntt> 絶縁膜加工法
US4507384A (en) * 1983-04-18 1985-03-26 Nippon Telegraph & Telephone Public Corporation Pattern forming material and method for forming pattern therewith
JPS6035727A (ja) * 1983-08-08 1985-02-23 Hitachi Chem Co Ltd パタ−ンの製造法
JPS6057833A (ja) * 1983-09-09 1985-04-03 Nippon Telegr & Teleph Corp <Ntt> レジスト材料
JPS6075320A (ja) * 1983-10-03 1985-04-27 Agency Of Ind Science & Technol ガス選択透過性複合膜およびその製造方法
JPS60108842A (ja) * 1983-11-18 1985-06-14 Mitsubishi Electric Corp 半導体装置の製法
US4524121A (en) * 1983-11-21 1985-06-18 Rohm And Haas Company Positive photoresists containing preformed polyglutarimide polymer
JPS60262150A (ja) * 1984-06-11 1985-12-25 Nippon Telegr & Teleph Corp <Ntt> 三層レジスト用中間層材料及びそれを用いた三層レジストパタン形成方法

Also Published As

Publication number Publication date
DE3789986T2 (de) 1994-12-22
EP0239488A2 (de) 1987-09-30
EP0239488B1 (de) 1994-06-08
US4732841A (en) 1988-03-22
EP0239488A3 (en) 1990-03-21
JPS62272535A (ja) 1987-11-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee