DE3786866T2 - Lithographisches Gerät. - Google Patents

Lithographisches Gerät.

Info

Publication number
DE3786866T2
DE3786866T2 DE87114694T DE3786866T DE3786866T2 DE 3786866 T2 DE3786866 T2 DE 3786866T2 DE 87114694 T DE87114694 T DE 87114694T DE 3786866 T DE3786866 T DE 3786866T DE 3786866 T2 DE3786866 T2 DE 3786866T2
Authority
DE
Germany
Prior art keywords
lithographic device
lithographic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE87114694T
Other languages
English (en)
Other versions
DE3786866D1 (de
Inventor
Mitsuo Ooyama
Kimiaki Ando
Yoshio Kawamura
Norio Saitou
Takanori Simura
Hiroyuki Kohida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3786866D1 publication Critical patent/DE3786866D1/de
Application granted granted Critical
Publication of DE3786866T2 publication Critical patent/DE3786866T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31762—Computer and memory organisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
DE87114694T 1986-10-09 1987-10-08 Lithographisches Gerät. Expired - Fee Related DE3786866T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61239005A JPS6394623A (ja) 1986-10-09 1986-10-09 描画装置

Publications (2)

Publication Number Publication Date
DE3786866D1 DE3786866D1 (de) 1993-09-09
DE3786866T2 true DE3786866T2 (de) 1993-11-11

Family

ID=17038477

Family Applications (1)

Application Number Title Priority Date Filing Date
DE87114694T Expired - Fee Related DE3786866T2 (de) 1986-10-09 1987-10-08 Lithographisches Gerät.

Country Status (4)

Country Link
US (1) US4820928A (de)
EP (1) EP0263517B1 (de)
JP (1) JPS6394623A (de)
DE (1) DE3786866T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0247825A (ja) * 1988-08-10 1990-02-16 Mitsubishi Electric Corp 荷電ビーム描画データ作成方法
JPH02210814A (ja) * 1989-02-10 1990-08-22 Fujitsu Ltd 半導体装置の製造方法
US5434795A (en) * 1990-01-11 1995-07-18 Fujitsu Limited Method of forming pattern having optical angle in charged particle exposure system
US5155368A (en) * 1991-04-16 1992-10-13 Micrion Corporation Ion beam blanking apparatus and method
US5251140A (en) * 1991-07-26 1993-10-05 International Business Machines Corporation E-beam control data compaction system and method
US5159201A (en) * 1991-07-26 1992-10-27 International Business Machines Corporation Shape decompositon system and method
US5590048A (en) * 1992-06-05 1996-12-31 Fujitsu Limited Block exposure pattern data extracting system and method for charged particle beam exposure
US5294800A (en) * 1992-07-31 1994-03-15 International Business Machines Corporation E-beam control data compaction system and method
US5446649A (en) * 1992-12-31 1995-08-29 International Business Machines Corporation Data-hiding and skew scan for unioning of shapes in electron beam lithography post-processing
JP3549282B2 (ja) * 1995-04-28 2004-08-04 株式会社ルネサステクノロジ 荷電ビーム描画データ作成方法およびその作成装置
US5712613A (en) * 1995-05-05 1998-01-27 Mcdonnell Douglas Corporation Computer-aided method for producing resistive tapers and resistive taper produced thereby
US6556702B1 (en) * 1999-01-06 2003-04-29 Applied Materials, Inc. Method and apparatus that determines charged particle beam shape codes
JP2004054529A (ja) * 2002-07-18 2004-02-19 Sharp Corp ２次元コード読み取り方法，２次元コード読み取りプログラム，該２次元コード読み取りプログラムの記録媒体及び２次元コード読み取り装置
US7000207B2 (en) * 2003-04-10 2006-02-14 Sioptical, Inc. Method of using a Manhattan layout to realize non-Manhattan shaped optical structures
CN100447795C (zh) * 2003-04-10 2008-12-31 斯欧普迪克尔股份有限公司 用曼哈顿设计来实现非曼哈顿形状光学结构的方法
US6979831B2 (en) * 2004-02-19 2005-12-27 Seagate Technology Llc Method and apparatus for a formatter following electron beam substrate processing system
JP4068081B2 (ja) * 2004-05-26 2008-03-26 株式会社日立ハイテクノロジーズ 荷電粒子線描画装置
US7038225B2 (en) * 2004-06-23 2006-05-02 Seagate Technology Llc Method and apparatus for electron beam processing of substrates
JP4748714B2 (ja) * 2005-10-28 2011-08-17 エスアイアイ・ナノテクノロジー株式会社 荷電粒子ビーム走査照射方法、荷電粒子ビーム装置、試料観察方法、及び、試料加工方法
JP2007123164A (ja) * 2005-10-31 2007-05-17 Sii Nanotechnology Inc 荷電粒子ビーム照射方法及び荷電粒子ビーム装置
JP4861084B2 (ja) * 2006-07-25 2012-01-25 キヤノン株式会社 描画処理装置及びその制御方法
US8243075B2 (en) * 2008-10-14 2012-08-14 Autodesk, Inc. Graphics processing unit accelerated dynamic radial tessellation
JP5873275B2 (ja) * 2011-09-12 2016-03-01 キヤノン株式会社 描画装置及び物品の製造方法
US9984853B2 (en) * 2014-11-28 2018-05-29 Nuflare Technology, Inc. Method for generating writing data

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2294489A1 (fr) * 1974-12-13 1976-07-09 Thomson Csf Dispositif pour le trace programme de dessins par bombardement de particules
JPS559433A (en) * 1978-07-07 1980-01-23 Toshiba Corp Electron beam exposure device
US4280186A (en) * 1978-07-07 1981-07-21 Tokyo Shibaura Denki Kabushiki Kaisha Exposure apparatus using electron beams
JPS55163842A (en) * 1979-06-08 1980-12-20 Fujitsu Ltd Method for electron beam exposure
JPS57180128A (en) * 1981-04-30 1982-11-06 Toshiba Corp Equipment for electron beam exposure
DD203429A1 (de) * 1981-08-03 1983-10-19 Eichhorn Hans Guenther Schaltungsanordnung zur steuerung eines korpuskularstrahls
US4433384A (en) * 1981-10-05 1984-02-21 Varian Associates, Inc. Pattern data handling system for an electron beam exposure system
JPS58205276A (ja) * 1982-05-26 1983-11-30 Hitachi Ltd 図形処理装置
JPS5971093A (ja) * 1982-10-18 1984-04-21 株式会社日立製作所 塗潰し図形発生装置
JPS59169131A (ja) * 1983-03-16 1984-09-25 Hitachi Ltd 電子線描画方法および装置

Also Published As

Publication number Publication date
DE3786866D1 (de) 1993-09-09
US4820928A (en) 1989-04-11
EP0263517A2 (de) 1988-04-13
JPS6394623A (ja) 1988-04-25
EP0263517A3 (en) 1989-09-06
EP0263517B1 (de) 1993-08-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee