DE3787772T2 - Halbleiterchip mit einer Höckerstruktur für automatische Bandmontage. - Google Patents

Halbleiterchip mit einer Höckerstruktur für automatische Bandmontage.

Info

Publication number
DE3787772T2
DE3787772T2 DE87110755T DE3787772T DE3787772T2 DE 3787772 T2 DE3787772 T2 DE 3787772T2 DE 87110755 T DE87110755 T DE 87110755T DE 3787772 T DE3787772 T DE 3787772T DE 3787772 T2 DE3787772 T2 DE 3787772T2
Authority
DE
Germany
Prior art keywords
semiconductor chip
bump structure
tape assembly
automatic tape
automatic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE87110755T
Other languages
English (en)
Other versions
DE3787772D1 (de
Inventor
Michael John Brady
Sung Kwon Kang
Paul Andrew Moskowitz
James Gardner Ryan
Timothy Clark Reiley
Erick Gregory Walton
Harry Randall Bickford
Michael John Palmer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3787772D1 publication Critical patent/DE3787772D1/de
Publication of DE3787772T2 publication Critical patent/DE3787772T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/86—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using tape automated bonding [TAB]
    • H—ELECTRICITY
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H—ELECTRICITY
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    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
DE87110755T 1986-08-11 1987-07-24 Halbleiterchip mit einer Höckerstruktur für automatische Bandmontage. Expired - Fee Related DE3787772T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US89509086A 1986-08-11 1986-08-11

Publications (2)

Publication Number Publication Date
DE3787772D1 DE3787772D1 (de) 1993-11-18
DE3787772T2 true DE3787772T2 (de) 1994-05-05

Family

ID=25403959

Family Applications (1)

Application Number Title Priority Date Filing Date
DE87110755T Expired - Fee Related DE3787772T2 (de) 1986-08-11 1987-07-24 Halbleiterchip mit einer Höckerstruktur für automatische Bandmontage.

Country Status (3)

Country Link
EP (1) EP0256357B1 (de)
JP (1) JPS6345826A (de)
DE (1) DE3787772T2 (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10157362A1 (de) * 2001-11-23 2003-06-12 Infineon Technologies Ag Leistungsmodul und Verfahren zu seiner Herstellung
DE102009056663A1 (de) * 2009-12-02 2011-06-09 Epcos Ag Metallisierung mit hoher Leistungsverträglichkeit und hoher elektrischer Leitfähigkeit
DE102019125447A1 (de) * 2019-09-20 2021-03-25 Infineon Technologies Ag Halbleitersubstrat mit einem Bondpat-Material auf Aluminiumbasis

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0732158B2 (ja) * 1988-04-08 1995-04-10 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 電子部品のための多層金属構造
KR0165883B1 (ko) * 1988-09-16 1999-02-01 존 엠. 클락 테이프 자동화 본딩 프로세스용의 금/주석 공정 본딩
EP0540519B1 (de) * 1990-06-22 1996-03-20 International Business Machines Corporation Verfahren zur Herstellung einer Thermokompressionsverbindung
DE4442960C1 (de) * 1994-12-02 1995-12-21 Fraunhofer Ges Forschung Lothöcker für die Flip-Chip-Montage und Verfahren zu dessen Herstellung
AU6502896A (en) * 1995-07-20 1997-02-18 Dallas Semiconductor Corporation Single chip microprocessor, math co-processor, random number generator, real-time clock and ram having a one-wire interface
JP2015076470A (ja) * 2013-10-08 2015-04-20 トヨタ自動車株式会社 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3531852A (en) * 1968-01-15 1970-10-06 North American Rockwell Method of forming face-bonding projections
US4005472A (en) * 1975-05-19 1977-01-25 National Semiconductor Corporation Method for gold plating of metallic layers on semiconductive devices
JPS5317070A (en) * 1976-07-30 1978-02-16 Nec Corp Semiconductor device
JPS5323564A (en) * 1976-08-17 1978-03-04 Nec Corp Bump type semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10157362A1 (de) * 2001-11-23 2003-06-12 Infineon Technologies Ag Leistungsmodul und Verfahren zu seiner Herstellung
DE10157362B4 (de) * 2001-11-23 2006-11-16 Infineon Technologies Ag Leistungsmodul und Verfahren zu seiner Herstellung
DE102009056663A1 (de) * 2009-12-02 2011-06-09 Epcos Ag Metallisierung mit hoher Leistungsverträglichkeit und hoher elektrischer Leitfähigkeit
US9173305B2 (en) 2009-12-02 2015-10-27 Epcos Ag Metallization having high power compatibility and high electrical conductivity
US9728705B2 (en) 2009-12-02 2017-08-08 Qualcomm Incorporated Metallization having high power compatibility and high electrical conductivity
DE102019125447A1 (de) * 2019-09-20 2021-03-25 Infineon Technologies Ag Halbleitersubstrat mit einem Bondpat-Material auf Aluminiumbasis
US11410950B2 (en) 2019-09-20 2022-08-09 Infineon Technologies Ag Semiconductor substrate having a bond pad material based on aluminum

Also Published As

Publication number Publication date
DE3787772D1 (de) 1993-11-18
EP0256357A3 (en) 1989-03-01
JPS6345826A (ja) 1988-02-26
EP0256357B1 (de) 1993-10-13
EP0256357A2 (de) 1988-02-24

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