DE3774163D1 - Steuerschaltung fuer die auffrischungsoperation bei einer halbleitervorrichtung. - Google Patents

Steuerschaltung fuer die auffrischungsoperation bei einer halbleitervorrichtung.

Info

Publication number
DE3774163D1
DE3774163D1 DE8787301287T DE3774163T DE3774163D1 DE 3774163 D1 DE3774163 D1 DE 3774163D1 DE 8787301287 T DE8787301287 T DE 8787301287T DE 3774163 T DE3774163 T DE 3774163T DE 3774163 D1 DE3774163 D1 DE 3774163D1
Authority
DE
Germany
Prior art keywords
control circuit
semiconductor device
refreshing operation
refreshing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787301287T
Other languages
English (en)
Inventor
Kazuhiro Sawada
Takayasu Sakurai
Kazutaka Nogami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3774163D1 publication Critical patent/DE3774163D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
DE8787301287T 1986-02-13 1987-02-13 Steuerschaltung fuer die auffrischungsoperation bei einer halbleitervorrichtung. Expired - Lifetime DE3774163D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61029320A JPS62188096A (ja) 1986-02-13 1986-02-13 半導体記憶装置のリフレツシユ動作タイミング制御回路

Publications (1)

Publication Number Publication Date
DE3774163D1 true DE3774163D1 (de) 1991-12-05

Family

ID=12272927

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787301287T Expired - Lifetime DE3774163D1 (de) 1986-02-13 1987-02-13 Steuerschaltung fuer die auffrischungsoperation bei einer halbleitervorrichtung.

Country Status (5)

Country Link
US (1) US4757217A (de)
EP (1) EP0242948B1 (de)
JP (1) JPS62188096A (de)
KR (1) KR900008655B1 (de)
DE (1) DE3774163D1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62188095A (ja) * 1986-02-14 1987-08-17 Toshiba Corp 半導体記憶装置の制御回路
JP2587229B2 (ja) * 1987-03-11 1997-03-05 日本テキサス・インスツルメンツ株式会社 アービタ回路
EP0310712B1 (de) * 1987-10-05 1993-09-01 Océ-Nederland B.V. Integrales Eingang-Ausgangssystem für Rastabtast-Druckeinheit
JPH07107793B2 (ja) * 1987-11-10 1995-11-15 株式会社東芝 仮想型スタティック半導体記憶装置及びこの記憶装置を用いたシステム
JPH01202025A (ja) * 1988-02-08 1989-08-15 Mitsubishi Electric Corp モード切替回路
US4841178A (en) * 1988-02-23 1989-06-20 Northern Telecom Limited Asynchronous processor arbitration circuit
EP0403269B1 (de) * 1989-06-14 1995-11-08 Matsushita Electric Industrial Co., Ltd. Arbitrierungsschaltung
US5041738A (en) * 1989-12-04 1991-08-20 Advanced Micro Devices, Inc. CMOS clock generator having an adjustable overlap voltage
US5038059A (en) * 1990-02-20 1991-08-06 Vlsi Technology, Inc. Status register with asynchronous set and reset signals
US5265231A (en) * 1991-02-08 1993-11-23 Thinking Machines Corporation Refresh control arrangement and a method for refreshing a plurality of random access memory banks in a memory system
US6111436A (en) * 1997-04-30 2000-08-29 Sun Microsystems, Inc. Measurement of signal propagation delay using arbiters
US6340901B1 (en) 1999-02-12 2002-01-22 Sun Microsystems, Inc. Measurement of signal propagation delay using arbiters
TW535161B (en) 1999-12-03 2003-06-01 Nec Electronics Corp Semiconductor memory device and its testing method
JP3376998B2 (ja) 2000-03-08 2003-02-17 日本電気株式会社 半導体記憶装置
JP2001357670A (ja) * 2000-04-14 2001-12-26 Mitsubishi Electric Corp 半導体記憶装置
JP2002298574A (ja) * 2001-03-29 2002-10-11 Internatl Business Mach Corp <Ibm> Ｄｒａｍ及びｄｒａｍのリフレッシュ方法
JP4743999B2 (ja) * 2001-05-28 2011-08-10 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP4262912B2 (ja) 2001-10-16 2009-05-13 Ｎｅｃエレクトロニクス株式会社 半導体記憶装置
JP4249412B2 (ja) 2001-12-27 2009-04-02 Ｎｅｃエレクトロニクス株式会社 半導体記憶装置
JP3998539B2 (ja) * 2002-08-28 2007-10-31 富士通株式会社 半導体記憶装置
US7225283B1 (en) * 2003-12-23 2007-05-29 Cypress Semiconductor Corporation Asynchronous arbiter with bounded resolution time and predictable output state
KR100582358B1 (ko) * 2003-12-29 2006-05-22 주식회사 하이닉스반도체 반도체 기억 소자의 온 다이 터미네이션 구동 회로 및 방법
US7383370B1 (en) 2005-03-31 2008-06-03 Cypress Semiconductor Corporation Arbiter circuit and signal arbitration method
CN109547011B (zh) * 2017-09-22 2022-11-29 智原科技股份有限公司 仲裁电路

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4406013A (en) * 1980-10-01 1983-09-20 Intel Corporation Multiple bit output dynamic random-access memory
US4403192A (en) * 1980-12-08 1983-09-06 The United States Of America As Represented By The Secretary Of The Army Priority circuit for service request signals
US4420695A (en) * 1981-05-26 1983-12-13 National Semiconductor Corporation Synchronous priority circuit
JPS5826396A (ja) * 1981-08-11 1983-02-16 Fujitsu Ltd ダイナミツク・ランダムアクセスメモリのリフレツシユ方式
US4556952A (en) * 1981-08-12 1985-12-03 International Business Machines Corporation Refresh circuit for dynamic memory of a data processor employing a direct memory access controller
JPS5888894A (ja) * 1981-11-19 1983-05-27 Hitachi Ltd リフレツシユ・アクセス競合製御回路
JPS5897195A (ja) * 1981-12-07 1983-06-09 Fujitsu Ltd ダイナミツク半導体記憶装置
US4620118A (en) * 1982-10-01 1986-10-28 At&T Bell Laboratories Dual port access circuit with automatic asynchronous contention resolving capability
EP0116774B1 (de) * 1982-12-27 1991-07-24 Kabushiki Kaisha Toshiba Halbleiterspeicheranordnung mit einem Auffrischungsmechanismus
US4578782A (en) * 1983-08-26 1986-03-25 Motorola, Inc. Asynchronous memory refresh arbitration circuit
JPS6055593A (ja) * 1983-09-06 1985-03-30 Nec Corp 擬似スタティックメモリ
DE3343192C2 (de) * 1983-11-29 1985-10-03 Nixdorf Computer Ag, 4790 Paderborn Schaltungsanordnung zum Wiederauffrischen der in einem dynamischen Speicher enthaltenen Informationen
US4625301A (en) * 1983-11-30 1986-11-25 Tandy Corporation Dynamic memory refresh circuit
US4622668A (en) * 1984-05-09 1986-11-11 International Business Machines Corporation Process and apparatus for testing a microprocessor and dynamic ram
JPS615495A (ja) * 1984-05-31 1986-01-11 Toshiba Corp 半導体記憶装置

Also Published As

Publication number Publication date
EP0242948A1 (de) 1987-10-28
KR870008312A (ko) 1987-09-25
US4757217A (en) 1988-07-12
EP0242948B1 (de) 1991-10-30
JPS62188096A (ja) 1987-08-17
KR900008655B1 (ko) 1990-11-26

Similar Documents

Publication Publication Date Title
DE3774163D1 (de) Steuerschaltung fuer die auffrischungsoperation bei einer halbleitervorrichtung.
DE3788362D1 (de) Halbleiteranordnung für die Verwendung in einer Karte.
DE3879804D1 (de) Integrierte halbleiterschaltungsvorrichtung.
KR920003834A (ko) 반도체 집적회로 장치의 제어방법
DE3782848D1 (de) Steuerschaltung fuer einen umrichter.
IT8221971A0 (it) Dispositivo a circuito integrato a semiconduttori.
DE3868016D1 (de) Hilfsgeraet fuer die beatmung.
DE3778539D1 (de) Wandgetragene programmierbare steuervorrichtung fuer mehrfachschaltungen.
IT8221608A0 (it) Dispositivo di memoria a semiconduttori.
DE3879250D1 (de) Ansteuerungsvorrichtung fuer einen halbleiterlaser.
DE68917848D1 (de) Halbleiteranordnung.
DE3886823D1 (de) Ansteuerung einer Halbleitervorrichtung.
IT8421908A0 (it) Dispositivo a circuito integrato a semiconduttore.
IT8422073A0 (it) Dispositivo a circuito integrato a semiconduttori in particolare includenti dispositivi di memoria.
DE68921421D1 (de) Halbleitervorrichtung.
IT8224203A0 (it) Dispositivo a circuito integrato a semiconduttori.
DE69022537D1 (de) Halbleiterspeicheranordnung.
IT8520269A0 (it) Dispositivo a circuito integrato a semiconduttori e procedimento per la produzione di esso.
DE3783569D1 (de) Halbleiterspeicher zur ausfuehrung einer selbstauffrischungsoperation.
DE69017518D1 (de) Halbleiterspeicheranordnung.
DE68902151D1 (de) Leseschaltung, die in einer halbleiterspeichereinrichtung enthalten ist.
DE3789783D1 (de) Halbleiterspeicheranordnung.
DE3751607D1 (de) Stromversorgungsleitungen in einer integrierten Halbleiterschaltung.
IT8223283A0 (it) Dispositivo a circuito integrato a semiconduttori.
DE68915050D1 (de) Chipfreigabe-Eingangsschaltung in einer Halbleiterspeicheranordnung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee