DE3773312D1 - Laser-aetzverfahren mit hoher aetzgeschwindigkeit. - Google Patents

Laser-aetzverfahren mit hoher aetzgeschwindigkeit.

Info

Publication number
DE3773312D1
DE3773312D1 DE8787110154T DE3773312T DE3773312D1 DE 3773312 D1 DE3773312 D1 DE 3773312D1 DE 8787110154 T DE8787110154 T DE 8787110154T DE 3773312 T DE3773312 T DE 3773312T DE 3773312 D1 DE3773312 D1 DE 3773312D1
Authority
DE
Germany
Prior art keywords
eagle
speed
etching process
laser etching
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787110154T
Other languages
German (de)
English (en)
Inventor
James Hammond Brannon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3773312D1 publication Critical patent/DE3773312D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
DE8787110154T 1986-09-12 1987-07-14 Laser-aetzverfahren mit hoher aetzgeschwindigkeit. Expired - Lifetime DE3773312D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/906,490 US4731158A (en) 1986-09-12 1986-09-12 High rate laser etching technique

Publications (1)

Publication Number Publication Date
DE3773312D1 true DE3773312D1 (de) 1991-10-31

Family

ID=25422528

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787110154T Expired - Lifetime DE3773312D1 (de) 1986-09-12 1987-07-14 Laser-aetzverfahren mit hoher aetzgeschwindigkeit.

Country Status (4)

Country Link
US (1) US4731158A (https=)
EP (1) EP0259572B1 (https=)
JP (1) JPS6370528A (https=)
DE (1) DE3773312D1 (https=)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62262433A (ja) * 1986-05-09 1987-11-14 Hitachi Ltd 表面処理方法
JPH0682643B2 (ja) * 1987-03-13 1994-10-19 科学技術庁長官官房会計課長 表面処理方法
IL84255A (en) * 1987-10-23 1993-02-21 Galram Technology Ind Ltd Process for removal of post- baked photoresist layer
JPH01134932A (ja) * 1987-11-19 1989-05-26 Oki Electric Ind Co Ltd 基板清浄化方法及び基板清浄化装置
US4897361A (en) * 1987-12-14 1990-01-30 American Telephone & Telegraph Company, At&T Bell Laboratories Patterning method in the manufacture of miniaturized devices
JPH0277124A (ja) * 1988-06-29 1990-03-16 Tokyo Electron Ltd ドライエッチング方法
GB2234631B (en) * 1989-07-27 1993-02-17 Stc Plc Selective etching of insulating materials
US5139606A (en) * 1989-12-05 1992-08-18 Massachusetts Institute Of Technology Laser bilayer etching of GaAs surfaces
US5195163A (en) * 1991-09-27 1993-03-16 The United States Of America As Represented By The Secretary Of The Navy Fabrication and phase tuning of an optical waveguide device
AU7682594A (en) * 1993-09-08 1995-03-27 Uvtech Systems, Inc. Surface processing
US5814156A (en) * 1993-09-08 1998-09-29 Uvtech Systems Inc. Photoreactive surface cleaning
US5580421A (en) * 1994-06-14 1996-12-03 Fsi International Apparatus for surface conditioning
US6015503A (en) * 1994-06-14 2000-01-18 Fsi International, Inc. Method and apparatus for surface conditioning
US5607601A (en) * 1995-02-02 1997-03-04 The Aerospace Corporation Method for patterning and etching film layers of semiconductor devices
TW350095B (en) * 1995-11-21 1999-01-11 Daido Hoxan Inc Cutting method and apparatus for semiconductor materials
IL119246A (en) * 1996-09-12 2000-10-31 Oramir Semiconductor Ltd Laser removal of foreign materials from surfaces
US6165273A (en) 1997-10-21 2000-12-26 Fsi International Inc. Equipment for UV wafer heating and photochemistry
KR100271763B1 (ko) * 1997-12-05 2001-02-01 윤종용 폴리실리콘식각방법및그식각장치
US6451217B1 (en) * 1998-06-09 2002-09-17 Speedfam-Ipec Co., Ltd. Wafer etching method
DE10018255C2 (de) * 2000-04-13 2003-08-28 Leica Microsystems Laserschneid-Verfahren und Laserschneid-Vorrichtung zum Laserschneiden mit mikroskopischer Proben
US20030155328A1 (en) * 2002-02-15 2003-08-21 Huth Mark C. Laser micromachining and methods and systems of same
GB2399311B (en) * 2003-03-04 2005-06-15 Xsil Technology Ltd Laser machining using an active assist gas
US6969822B2 (en) * 2003-05-13 2005-11-29 Hewlett-Packard Development Company, L.P. Laser micromachining systems
US7754999B2 (en) 2003-05-13 2010-07-13 Hewlett-Packard Development Company, L.P. Laser micromachining and methods of same
GB2404280B (en) * 2003-07-03 2006-09-27 Xsil Technology Ltd Die bonding
US20050279453A1 (en) * 2004-06-17 2005-12-22 Uvtech Systems, Inc. System and methods for surface cleaning
US20080191163A1 (en) * 2007-02-09 2008-08-14 Mocella Michael T Laser-Assisted Etching Using Gas Compositions Comprising Unsaturated Fluorocarbons
US10453986B2 (en) 2008-01-23 2019-10-22 Solvay Fluor Gmbh Process for the manufacture of solar cells
US9790090B2 (en) * 2013-02-13 2017-10-17 Lawrence Livermore National Security, Llc Laser-induced gas plasma machining
RU2537101C1 (ru) * 2013-08-08 2014-12-27 Федеральное государственное бюджетное учреждение науки Институт сверхвысокочастотной полупроводниковой электроники Российской академии наук (ИСВЧПЭ РАН) Способ прецизионной лазерно-плазмохимической резки пластин

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3095341A (en) * 1961-06-30 1963-06-25 Bell Telephone Labor Inc Photosensitive gas phase etching of semiconductors by selective radiation
US4038117A (en) * 1975-09-04 1977-07-26 Ilc Technology, Inc. Process for gas polishing sapphire and the like
US4361461A (en) * 1981-03-13 1982-11-30 Bell Telephone Laboratories, Incorporated Hydrogen etching of semiconductors and oxides
US4435898A (en) * 1982-03-22 1984-03-13 International Business Machines Corporation Method for making a base etched transistor integrated circuit
US4535531A (en) * 1982-03-22 1985-08-20 International Business Machines Corporation Method and resulting structure for selective multiple base width transistor structures
US4546536A (en) * 1983-08-04 1985-10-15 International Business Machines Corporation Fabrication methods for high performance lateral bipolar transistors
US4579628A (en) * 1983-10-28 1986-04-01 International Paper Company Process for chlorine bleaching of kraft pulp using a sulfite extraction stage
US4505949A (en) * 1984-04-25 1985-03-19 Texas Instruments Incorporated Thin film deposition using plasma-generated source gas
JPS6153732A (ja) * 1984-08-23 1986-03-17 Daikin Ind Ltd シリコン酸化膜の光照射によるエツチング方法
GB8516984D0 (en) * 1985-07-04 1985-08-07 British Telecomm Etching method

Also Published As

Publication number Publication date
JPH0529134B2 (https=) 1993-04-28
EP0259572B1 (en) 1991-09-25
EP0259572A2 (en) 1988-03-16
EP0259572A3 (en) 1988-06-01
US4731158A (en) 1988-03-15
JPS6370528A (ja) 1988-03-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee