DE3773312D1 - Laser-aetzverfahren mit hoher aetzgeschwindigkeit. - Google Patents
Laser-aetzverfahren mit hoher aetzgeschwindigkeit.Info
- Publication number
- DE3773312D1 DE3773312D1 DE8787110154T DE3773312T DE3773312D1 DE 3773312 D1 DE3773312 D1 DE 3773312D1 DE 8787110154 T DE8787110154 T DE 8787110154T DE 3773312 T DE3773312 T DE 3773312T DE 3773312 D1 DE3773312 D1 DE 3773312D1
- Authority
- DE
- Germany
- Prior art keywords
- eagle
- speed
- etching process
- laser etching
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000010329 laser etching Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/906,490 US4731158A (en) | 1986-09-12 | 1986-09-12 | High rate laser etching technique |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3773312D1 true DE3773312D1 (de) | 1991-10-31 |
Family
ID=25422528
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787110154T Expired - Fee Related DE3773312D1 (de) | 1986-09-12 | 1987-07-14 | Laser-aetzverfahren mit hoher aetzgeschwindigkeit. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4731158A (de) |
EP (1) | EP0259572B1 (de) |
JP (1) | JPS6370528A (de) |
DE (1) | DE3773312D1 (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62262433A (ja) * | 1986-05-09 | 1987-11-14 | Hitachi Ltd | 表面処理方法 |
JPH0682643B2 (ja) * | 1987-03-13 | 1994-10-19 | 科学技術庁長官官房会計課長 | 表面処理方法 |
IL84255A (en) * | 1987-10-23 | 1993-02-21 | Galram Technology Ind Ltd | Process for removal of post- baked photoresist layer |
JPH01134932A (ja) * | 1987-11-19 | 1989-05-26 | Oki Electric Ind Co Ltd | 基板清浄化方法及び基板清浄化装置 |
US4897361A (en) * | 1987-12-14 | 1990-01-30 | American Telephone & Telegraph Company, At&T Bell Laboratories | Patterning method in the manufacture of miniaturized devices |
JPH0277124A (ja) * | 1988-06-29 | 1990-03-16 | Tokyo Electron Ltd | ドライエッチング方法 |
GB2234631B (en) * | 1989-07-27 | 1993-02-17 | Stc Plc | Selective etching of insulating materials |
US5139606A (en) * | 1989-12-05 | 1992-08-18 | Massachusetts Institute Of Technology | Laser bilayer etching of GaAs surfaces |
US5195163A (en) * | 1991-09-27 | 1993-03-16 | The United States Of America As Represented By The Secretary Of The Navy | Fabrication and phase tuning of an optical waveguide device |
AU7682594A (en) * | 1993-09-08 | 1995-03-27 | Uvtech Systems, Inc. | Surface processing |
US5814156A (en) * | 1993-09-08 | 1998-09-29 | Uvtech Systems Inc. | Photoreactive surface cleaning |
US6015503A (en) * | 1994-06-14 | 2000-01-18 | Fsi International, Inc. | Method and apparatus for surface conditioning |
US5580421A (en) * | 1994-06-14 | 1996-12-03 | Fsi International | Apparatus for surface conditioning |
US5607601A (en) * | 1995-02-02 | 1997-03-04 | The Aerospace Corporation | Method for patterning and etching film layers of semiconductor devices |
TW350095B (en) * | 1995-11-21 | 1999-01-11 | Daido Hoxan Inc | Cutting method and apparatus for semiconductor materials |
IL119246A (en) * | 1996-09-12 | 2000-10-31 | Oramir Semiconductor Ltd | Laser removal of foreign materials from surfaces |
US6165273A (en) | 1997-10-21 | 2000-12-26 | Fsi International Inc. | Equipment for UV wafer heating and photochemistry |
KR100271763B1 (ko) * | 1997-12-05 | 2001-02-01 | 윤종용 | 폴리실리콘식각방법및그식각장치 |
US6451217B1 (en) * | 1998-06-09 | 2002-09-17 | Speedfam-Ipec Co., Ltd. | Wafer etching method |
DE10018255C2 (de) * | 2000-04-13 | 2003-08-28 | Leica Microsystems | Laserschneid-Verfahren und Laserschneid-Vorrichtung zum Laserschneiden mit mikroskopischer Proben |
US20030155328A1 (en) * | 2002-02-15 | 2003-08-21 | Huth Mark C. | Laser micromachining and methods and systems of same |
GB2399311B (en) * | 2003-03-04 | 2005-06-15 | Xsil Technology Ltd | Laser machining using an active assist gas |
US6969822B2 (en) * | 2003-05-13 | 2005-11-29 | Hewlett-Packard Development Company, L.P. | Laser micromachining systems |
US7754999B2 (en) | 2003-05-13 | 2010-07-13 | Hewlett-Packard Development Company, L.P. | Laser micromachining and methods of same |
GB2404280B (en) * | 2003-07-03 | 2006-09-27 | Xsil Technology Ltd | Die bonding |
US20050279453A1 (en) * | 2004-06-17 | 2005-12-22 | Uvtech Systems, Inc. | System and methods for surface cleaning |
US20080191163A1 (en) * | 2007-02-09 | 2008-08-14 | Mocella Michael T | Laser-Assisted Etching Using Gas Compositions Comprising Unsaturated Fluorocarbons |
MX2010008075A (es) | 2008-01-23 | 2010-08-04 | Solvay Fluor Gmbh | Proceso para la fabricacion de celulas solares. |
US9790090B2 (en) * | 2013-02-13 | 2017-10-17 | Lawrence Livermore National Security, Llc | Laser-induced gas plasma machining |
RU2537101C1 (ru) * | 2013-08-08 | 2014-12-27 | Федеральное государственное бюджетное учреждение науки Институт сверхвысокочастотной полупроводниковой электроники Российской академии наук (ИСВЧПЭ РАН) | Способ прецизионной лазерно-плазмохимической резки пластин |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3095341A (en) * | 1961-06-30 | 1963-06-25 | Bell Telephone Labor Inc | Photosensitive gas phase etching of semiconductors by selective radiation |
US4038117A (en) * | 1975-09-04 | 1977-07-26 | Ilc Technology, Inc. | Process for gas polishing sapphire and the like |
US4361461A (en) * | 1981-03-13 | 1982-11-30 | Bell Telephone Laboratories, Incorporated | Hydrogen etching of semiconductors and oxides |
US4535531A (en) * | 1982-03-22 | 1985-08-20 | International Business Machines Corporation | Method and resulting structure for selective multiple base width transistor structures |
US4435898A (en) * | 1982-03-22 | 1984-03-13 | International Business Machines Corporation | Method for making a base etched transistor integrated circuit |
US4546536A (en) * | 1983-08-04 | 1985-10-15 | International Business Machines Corporation | Fabrication methods for high performance lateral bipolar transistors |
US4579628A (en) * | 1983-10-28 | 1986-04-01 | International Paper Company | Process for chlorine bleaching of kraft pulp using a sulfite extraction stage |
US4505949A (en) * | 1984-04-25 | 1985-03-19 | Texas Instruments Incorporated | Thin film deposition using plasma-generated source gas |
JPS6153732A (ja) * | 1984-08-23 | 1986-03-17 | Daikin Ind Ltd | シリコン酸化膜の光照射によるエツチング方法 |
GB8516984D0 (en) * | 1985-07-04 | 1985-08-07 | British Telecomm | Etching method |
-
1986
- 1986-09-12 US US06/906,490 patent/US4731158A/en not_active Expired - Fee Related
-
1987
- 1987-06-29 JP JP62159914A patent/JPS6370528A/ja active Granted
- 1987-07-14 EP EP87110154A patent/EP0259572B1/de not_active Expired
- 1987-07-14 DE DE8787110154T patent/DE3773312D1/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US4731158A (en) | 1988-03-15 |
EP0259572A3 (en) | 1988-06-01 |
EP0259572B1 (de) | 1991-09-25 |
JPS6370528A (ja) | 1988-03-30 |
EP0259572A2 (de) | 1988-03-16 |
JPH0529134B2 (de) | 1993-04-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |