DE3760030D1 - Photosensitive and high energy beam sensitive resin composition containing substituted polysiloxane - Google Patents

Photosensitive and high energy beam sensitive resin composition containing substituted polysiloxane

Info

Publication number
DE3760030D1
DE3760030D1 DE8787300976T DE3760030T DE3760030D1 DE 3760030 D1 DE3760030 D1 DE 3760030D1 DE 8787300976 T DE8787300976 T DE 8787300976T DE 3760030 T DE3760030 T DE 3760030T DE 3760030 D1 DE3760030 D1 DE 3760030D1
Authority
DE
Germany
Prior art keywords
photosensitive
resin composition
composition containing
high energy
energy beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8787300976T
Other languages
English (en)
Inventor
Saburo Imamura
Katsuhide Onose
Akinobu Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2527486A external-priority patent/JPH0238126B2/ja
Priority claimed from JP61056363A external-priority patent/JPH063548B2/ja
Priority claimed from JP61065123A external-priority patent/JPH083637B2/ja
Priority claimed from JP61084683A external-priority patent/JPS62240954A/ja
Priority claimed from JP13681686A external-priority patent/JPH0693123B2/ja
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Application granted granted Critical
Publication of DE3760030D1 publication Critical patent/DE3760030D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Silicon Polymers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
DE8787300976T 1986-02-07 1987-02-04 Photosensitive and high energy beam sensitive resin composition containing substituted polysiloxane Expired DE3760030D1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2527486A JPH0238126B2 (ja) 1986-02-07 1986-02-07 Horishirokisankagobutsu
JP61056363A JPH063548B2 (ja) 1986-03-14 1986-03-14 感光性樹脂組成物
JP61065123A JPH083637B2 (ja) 1986-03-24 1986-03-24 感光性樹脂組成物
JP61084683A JPS62240954A (ja) 1986-04-12 1986-04-12 レジスト材料
JP13681686A JPH0693123B2 (ja) 1986-06-12 1986-06-12 感光性高分子膜およびこれを用いた多層配線板

Publications (1)

Publication Number Publication Date
DE3760030D1 true DE3760030D1 (en) 1989-02-02

Family

ID=27520714

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787300976T Expired DE3760030D1 (en) 1986-02-07 1987-02-04 Photosensitive and high energy beam sensitive resin composition containing substituted polysiloxane

Country Status (4)

Country Link
US (1) US5158854A (de)
EP (1) EP0232167B1 (de)
KR (1) KR900002363B1 (de)
DE (1) DE3760030D1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5206111A (en) * 1988-04-02 1993-04-27 Hoechst Aktiengesellschaft Binders soluble in aqueous alkali and containing silanyl groups in the side chain for a photosensitive mixture
DE3811242A1 (de) * 1988-04-02 1989-10-19 Hoechst Ag Im waessrigem alkali loesliche, silanylgruppen in der seitenkette enthaltende bindemittel, verfahren zu deren herstellung sowie lichtempfindliches gemisch, enthaltend diese verbindungen
DE69131658T2 (de) * 1990-06-25 2000-04-27 Matsushita Electronics Corp Licht- oder strahlungsempfindliche Zusammensetzung
US5457003A (en) * 1990-07-06 1995-10-10 Nippon Telegraph And Telephone Corporation Negative working resist material, method for the production of the same and process of forming resist patterns using the same
JP2752786B2 (ja) * 1990-11-19 1998-05-18 三菱電機株式会社 カラーフィルターの表面保護膜
US5338818A (en) * 1992-09-10 1994-08-16 International Business Machines Corporation Silicon containing positive resist for DUV lithography
JP3667893B2 (ja) * 1996-09-24 2005-07-06 川崎マイクロエレクトロニクス株式会社 半導体装置の製造方法
US6444408B1 (en) 2000-02-28 2002-09-03 International Business Machines Corporation High silicon content monomers and polymers suitable for 193 nm bilayer resists
US6599995B2 (en) * 2001-05-01 2003-07-29 Korea Institute Of Science And Technology Polyalkylaromaticsilsesquioxane and preparation method thereof
CN100419001C (zh) * 2003-10-10 2008-09-17 陶氏康宁公司 醇官能的有机硅树脂
JP4491283B2 (ja) * 2004-06-10 2010-06-30 信越化学工業株式会社 反射防止膜形成用組成物を用いたパターン形成方法
DE602005003475T2 (de) * 2004-07-16 2008-09-25 Dow Corning Corp., Midland Strahlungsempfindliche silikonharzzusammensetzung
EP1662322B1 (de) * 2004-11-26 2017-01-11 Toray Industries, Inc. Positive lichtempfindliche Siloxanzusammensetzung, damit gebildeter Härtungsfilm und Vorrichtung mit dem Härtungsfilm
KR101428718B1 (ko) 2007-02-02 2014-09-24 삼성디스플레이 주식회사 감광성 유기물, 이의 도포 방법, 이를 이용한 유기막 패턴형성 방법, 이로써 제조되는 표시 장치
US8637157B2 (en) 2011-02-28 2014-01-28 Momentive Performance Materials Inc. Copolycarbonates, their derivatives and the use thereof in silicone hardcoat compositions
JP6167588B2 (ja) * 2012-03-29 2017-07-26 Jsr株式会社 レジスト下層膜形成用組成物及びパターン形成方法
JP6534959B2 (ja) * 2016-04-21 2019-06-26 信越化学工業株式会社 有機膜の形成方法及び半導体装置用基板の製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3864292A (en) * 1971-05-17 1975-02-04 Celanese Corp Baked Alkyd Resin Enamel Coating Compositions Cross-Linked with Etherified Trimethylolated Crotonylidenediurea or Etherified Methylolated 2,7-Dixo- 4, 5 -Dimethyl- Decahydropyrimido- (4, 5-d) -Pyrimidine
JPS5511217A (en) * 1978-07-10 1980-01-26 Nippon Telegr & Teleph Corp <Ntt> Pattern forming method using radiation sensitive high polymer
JPS5760330A (en) * 1980-09-27 1982-04-12 Fujitsu Ltd Resin composition
JPS5848045A (ja) * 1981-09-18 1983-03-19 Shin Etsu Chem Co Ltd 感光性組成物
EP0076656B1 (de) * 1981-10-03 1988-06-01 Japan Synthetic Rubber Co., Ltd. In Lösungsmitteln lösliche Organopolysilsesquioxane, Verfahren zu ihrer Herstellung, Zusammensetzungen und Halbleitervorrichtungen, die diese verwenden
US4507384A (en) * 1983-04-18 1985-03-26 Nippon Telegraph & Telephone Public Corporation Pattern forming material and method for forming pattern therewith
JPS59198446A (ja) * 1983-04-26 1984-11-10 Nippon Telegr & Teleph Corp <Ntt> 感光性樹脂組成物及びその使用方法
JPS6076739A (ja) * 1983-10-04 1985-05-01 Nippon Telegr & Teleph Corp <Ntt> 感光性樹脂組成物及びその使用方法
US4551409A (en) * 1983-11-07 1985-11-05 Shipley Company Inc. Photoresist composition of cocondensed naphthol and phenol with formaldehyde in admixture with positive o-quinone diazide or negative azide
US4603195A (en) * 1983-12-30 1986-07-29 International Business Machines Corporation Organosilicon compound and use thereof in photolithography
US4564575A (en) * 1984-01-30 1986-01-14 International Business Machines Corporation Tailoring of novolak and diazoquinone positive resists by acylation of novolak
JPS60191245A (ja) * 1984-03-12 1985-09-28 Fujitsu Ltd レジスト膜材料およびレジストパタ−ンの形成方法
US4702990A (en) * 1984-05-14 1987-10-27 Nippon Telegraph And Telephone Corporation Photosensitive resin composition and process for forming photo-resist pattern using the same
JPS60238827A (ja) * 1984-05-14 1985-11-27 Nippon Telegr & Teleph Corp <Ntt> 感光性樹脂組成物
KR900002364B1 (ko) * 1984-05-30 1990-04-12 후지쓰가부시끼가이샤 패턴 형성재의 제조방법
JPS61141442A (ja) * 1984-12-14 1986-06-28 Fuji Photo Film Co Ltd 光可溶化組成物
JPS61144639A (ja) * 1984-12-19 1986-07-02 Hitachi Ltd 放射線感応性組成物及びそれを用いたパタ−ン形成法
US4600285A (en) 1984-12-24 1986-07-15 Eastman Kodak Company Overextended leader positioning mechanism
WO1986005284A1 (en) * 1985-03-07 1986-09-12 Hughes Aircraft Company Polysiloxane resist for ion beam and electron beam lithography
JPS61238062A (ja) * 1985-04-16 1986-10-23 Canon Inc 電子写真感光体
US4822716A (en) * 1985-12-27 1989-04-18 Kabushiki Kaisha Toshiba Polysilanes, Polysiloxanes and silicone resist materials containing these compounds

Also Published As

Publication number Publication date
EP0232167A3 (en) 1987-11-25
EP0232167B1 (de) 1988-12-28
EP0232167A2 (de) 1987-08-12
KR900002363B1 (ko) 1990-04-12
US5158854A (en) 1992-10-27
KR870008220A (ko) 1987-09-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition