DE3751111D1 - Dünnschichttransistorenmatrix für Flüssigkristallanzeige mit Testmöglichkeit während der Herstellung, Testmethode und Anordnung zur Informationseingabe mit einer solchen Matrix. - Google Patents

Dünnschichttransistorenmatrix für Flüssigkristallanzeige mit Testmöglichkeit während der Herstellung, Testmethode und Anordnung zur Informationseingabe mit einer solchen Matrix.

Info

Publication number
DE3751111D1
DE3751111D1 DE3751111T DE3751111T DE3751111D1 DE 3751111 D1 DE3751111 D1 DE 3751111D1 DE 3751111 T DE3751111 T DE 3751111T DE 3751111 T DE3751111 T DE 3751111T DE 3751111 D1 DE3751111 D1 DE 3751111D1
Authority
DE
Germany
Prior art keywords
matrix
test
arrangement
liquid crystal
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3751111T
Other languages
English (en)
Other versions
DE3751111T2 (de
Inventor
Paul Matthew Alt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AU Optronics Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3751111D1 publication Critical patent/DE3751111D1/de
Publication of DE3751111T2 publication Critical patent/DE3751111T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/265Contactless testing
    • G01R31/2656Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1306Details
    • G02F1/1309Repairing; Testing
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/006Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/32Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136254Checking; Testing
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00Materials and properties
    • G02F2202/10Materials and properties semiconductor
    • G02F2202/103Materials and properties semiconductor a-Si
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/14Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S345/00Computer graphics processing and selective visual display systems
    • Y10S345/904Display with fail/safe testing feature

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Mathematical Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DE3751111T 1986-12-22 1987-12-01 Dünnschichttransistorenmatrix für Flüssigkristallanzeige mit Testmöglichkeit während der Herstellung, Testmethode und Anordnung zur Informationseingabe mit einer solchen Matrix. Expired - Lifetime DE3751111T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/945,935 US4819038A (en) 1986-12-22 1986-12-22 TFT array for liquid crystal displays allowing in-process testing

Publications (2)

Publication Number Publication Date
DE3751111D1 true DE3751111D1 (de) 1995-04-06
DE3751111T2 DE3751111T2 (de) 1995-09-14

Family

ID=25483731

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3751111T Expired - Lifetime DE3751111T2 (de) 1986-12-22 1987-12-01 Dünnschichttransistorenmatrix für Flüssigkristallanzeige mit Testmöglichkeit während der Herstellung, Testmethode und Anordnung zur Informationseingabe mit einer solchen Matrix.

Country Status (4)

Country Link
US (1) US4819038A (de)
EP (1) EP0272506B1 (de)
JP (1) JP2559773B2 (de)
DE (1) DE3751111T2 (de)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0627985B2 (ja) * 1987-05-06 1994-04-13 日本電気株式会社 薄膜トランジスタアレイ
US5179345A (en) * 1989-12-13 1993-01-12 International Business Machines Corporation Method and apparatus for analog testing
JPH03227547A (ja) * 1990-02-01 1991-10-08 Mitsubishi Electric Corp 半導体装置
US5057775A (en) * 1990-05-04 1991-10-15 Genrad, Inc. Method of testing control matrices for flat-panel displays
JPH04351972A (ja) * 1990-04-26 1992-12-07 Genrad Inc フラットパネルディスプレイ用制御マトリックスの試験方法
US5075237A (en) * 1990-07-26 1991-12-24 Industrial Technology Research Institute Process of making a high photosensitive depletion-gate thin film transistor
US5196911A (en) * 1990-07-26 1993-03-23 Industrial Technology Research Institute High photosensitive depletion-gate thin film transistor
JPH04158238A (ja) * 1990-10-22 1992-06-01 Ezel Inc 液晶パネルの検査方法
US5285150A (en) * 1990-11-26 1994-02-08 Photon Dynamics, Inc. Method and apparatus for testing LCD panel array
US5081687A (en) 1990-11-30 1992-01-14 Photon Dynamics, Inc. Method and apparatus for testing LCD panel array prior to shorting bar removal
US5206749A (en) * 1990-12-31 1993-04-27 Kopin Corporation Liquid crystal display having essentially single crystal transistors pixels and driving circuits
US5362671A (en) * 1990-12-31 1994-11-08 Kopin Corporation Method of fabricating single crystal silicon arrayed devices for display panels
US5258320A (en) * 1990-12-31 1993-11-02 Kopin Corporation Single crystal silicon arrayed devices for display panels
US5528397A (en) * 1991-12-03 1996-06-18 Kopin Corporation Single crystal silicon transistors for display panels
US5235272A (en) * 1991-06-17 1993-08-10 Photon Dynamics, Inc. Method and apparatus for automatically inspecting and repairing an active matrix LCD panel
US5175504A (en) * 1991-06-17 1992-12-29 Photon Dynamics, Inc. Method and apparatus for automatically inspecting and repairing a simple matrix circuit panel
US5432461A (en) * 1991-06-28 1995-07-11 Photon Dynamics, Inc. Method of testing active matrix liquid crystal display substrates
US5465052A (en) * 1991-09-10 1995-11-07 Photon Dynamics, Inc. Method of testing liquid crystal display substrates
US5543729A (en) * 1991-09-10 1996-08-06 Photon Dynamics, Inc. Testing apparatus and connector for liquid crystal display substrates
US5504438A (en) * 1991-09-10 1996-04-02 Photon Dynamics, Inc. Testing method for imaging defects in a liquid crystal display substrate
US5459409A (en) * 1991-09-10 1995-10-17 Photon Dynamics, Inc. Testing device for liquid crystal display base plate
US5444385A (en) * 1991-09-10 1995-08-22 Photon Dynamics, Inc. Testing apparatus for liquid crystal display substrates
US5184082A (en) * 1991-09-18 1993-02-02 Honeywell Inc. Apparatus and method for testing an active matrix pixel display
US5332893A (en) * 1992-07-22 1994-07-26 Minnesota Mining And Manufacturing Company Imaging system and device having a simplified electrode design
US5268569A (en) * 1992-07-22 1993-12-07 Minnesota Mining And Manufacturing Company Imaging system having optimized electrode geometry and processing
JPH06110069A (ja) * 1992-09-29 1994-04-22 Matsushita Electric Ind Co Ltd 電子部品の欠陥修復方法および欠陥修復装置
US5546013A (en) * 1993-03-05 1996-08-13 International Business Machines Corporation Array tester for determining contact quality and line integrity in a TFT/LCD
ES2139656T3 (es) * 1993-05-13 2000-02-16 Carlos Jorge Ramiro Pr Augusto Metodo para producir substratos semiconductores cristalinos de calidad vlsi.
JP2889132B2 (ja) * 1994-10-12 1999-05-10 株式会社フロンテック 薄膜トランジスタの検査装置
US5744967A (en) * 1995-08-24 1998-04-28 Sorensen; Brent A. Apparatus for detecting intermittent and continuous faults in multiple conductor wiring and terminations for electronic systems
US6697037B1 (en) 1996-04-29 2004-02-24 International Business Machines Corporation TFT LCD active data line repair
JP3106953B2 (ja) * 1996-05-16 2000-11-06 富士電機株式会社 表示素子駆動方法
US5952674A (en) * 1998-03-18 1999-09-14 International Business Machines Corporation Topography monitor
JP3107039B2 (ja) * 1998-03-20 2000-11-06 日本電気株式会社 面光源プローバ装置及び検査方法
US6545500B1 (en) 1999-12-08 2003-04-08 John E. Field Use of localized temperature change in determining the location and character of defects in flat-panel displays
DE10227332A1 (de) * 2002-06-19 2004-01-15 Akt Electron Beam Technology Gmbh Ansteuervorrichtung mit verbesserten Testeneigenschaften
JP2004050650A (ja) * 2002-07-19 2004-02-19 Nec Corp 半導体装置、画像出力装置、および機能素子の駆動方法
JP2004264349A (ja) * 2003-02-07 2004-09-24 Agilent Technol Inc アクティブマトリクスディスプレイ回路基板、それを含むディスプレイパネル、その検査方法、及びそのための検査装置
JP3760411B2 (ja) * 2003-05-21 2006-03-29 インターナショナル・ビジネス・マシーンズ・コーポレーション アクティブマトリックスパネルの検査装置、検査方法、およびアクティブマトリックスoledパネルの製造方法
CN100336099C (zh) * 2003-09-10 2007-09-05 友达光电股份有限公司 具有电路连接测试设计的显示面板
US20050174139A1 (en) * 2003-10-14 2005-08-11 Mahendran Chidambaram Apparatus for high speed probing of flat panel displays
KR100987890B1 (ko) * 2003-11-13 2010-10-13 엘지디스플레이 주식회사 액정표시소자의 검사장치 및 그 검사방법
US7319335B2 (en) * 2004-02-12 2008-01-15 Applied Materials, Inc. Configurable prober for TFT LCD array testing
US7355418B2 (en) * 2004-02-12 2008-04-08 Applied Materials, Inc. Configurable prober for TFT LCD array test
US20060038554A1 (en) * 2004-02-12 2006-02-23 Applied Materials, Inc. Electron beam test system stage
US6833717B1 (en) * 2004-02-12 2004-12-21 Applied Materials, Inc. Electron beam test system with integrated substrate transfer module
JP4281622B2 (ja) * 2004-05-31 2009-06-17 ソニー株式会社 表示装置及び検査方法
US7075323B2 (en) * 2004-07-29 2006-07-11 Applied Materials, Inc. Large substrate test system
US7256606B2 (en) * 2004-08-03 2007-08-14 Applied Materials, Inc. Method for testing pixels for LCD TFT displays
US7535238B2 (en) * 2005-04-29 2009-05-19 Applied Materials, Inc. In-line electron beam test system
WO2006120861A1 (ja) * 2005-05-02 2006-11-16 Shimadzu Corporation Tftアレイ基板検査装置
US20060273815A1 (en) * 2005-06-06 2006-12-07 Applied Materials, Inc. Substrate support with integrated prober drive
US7394276B2 (en) * 2006-01-17 2008-07-01 International Business Machines Corporation Active cancellation matrix for process parameter measurements
US7569818B2 (en) * 2006-03-14 2009-08-04 Applied Materials, Inc. Method to reduce cross talk in a multi column e-beam test system
US7602199B2 (en) * 2006-05-31 2009-10-13 Applied Materials, Inc. Mini-prober for TFT-LCD testing
US7786742B2 (en) * 2006-05-31 2010-08-31 Applied Materials, Inc. Prober for electronic device testing on large area substrates
US20080251019A1 (en) * 2007-04-12 2008-10-16 Sriram Krishnaswami System and method for transferring a substrate into and out of a reduced volume chamber accommodating multiple substrates
JP5305730B2 (ja) 2008-05-12 2013-10-02 キヤノン株式会社 半導体素子の製造方法ならびにその製造装置
EP2442356B1 (de) * 2009-06-09 2019-05-22 Sharp Kabushiki Kaisha Elektronische vorrichtung
TWI457575B (zh) * 2012-04-06 2014-10-21 Ind Tech Res Inst 具有自我測試的像素陣列模組及其自我測試方法
CN104166026A (zh) * 2014-08-29 2014-11-26 苏州市吴中区胥口广博模具加工厂 一种小型显示屏点亮测试座
CN104637426B (zh) * 2015-03-04 2017-04-05 京东方科技集团股份有限公司 负载测试电路、方法和显示装置
CN105609023B (zh) * 2015-12-31 2018-08-07 京东方科技集团股份有限公司 一种测试元件组、阵列基板、检测设备及检测方法
CN116360168B (zh) * 2023-05-11 2023-08-18 惠科股份有限公司 显示装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3801910A (en) * 1972-07-03 1974-04-02 Ibm Externally accessing mechanical difficult to access circuit nodes using photo-responsive conductors in integrated circuits
US3849872A (en) * 1972-10-24 1974-11-26 Ibm Contacting integrated circuit chip terminal through the wafer kerf
DE2256688B2 (de) * 1972-11-18 1976-05-06 Robert Bosch Gmbh, 7000 Stuttgart Verfahren zum auftrennen von leiterbahnen auf integrierten schaltkreisen
JPS58140781A (ja) * 1982-02-17 1983-08-20 株式会社日立製作所 画像表示装置
JPS59201441A (ja) * 1983-04-30 1984-11-15 Toshiba Corp 集束イオンビ−ムを用いたヒユ−ズ切断方法
CA1279127C (en) * 1984-05-04 1991-01-15 Vincent D. Cannella Integrated radiation sensing array
JPS61170724A (ja) * 1985-01-25 1986-08-01 Seiko Instr & Electronics Ltd アクテイブマトリクス表示装置用基板

Also Published As

Publication number Publication date
US4819038A (en) 1989-04-04
EP0272506A2 (de) 1988-06-29
DE3751111T2 (de) 1995-09-14
EP0272506A3 (de) 1991-05-29
JP2559773B2 (ja) 1996-12-04
EP0272506B1 (de) 1995-03-01
JPS63167333A (ja) 1988-07-11

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