DE3751111D1 - Dünnschichttransistorenmatrix für Flüssigkristallanzeige mit Testmöglichkeit während der Herstellung, Testmethode und Anordnung zur Informationseingabe mit einer solchen Matrix. - Google Patents
Dünnschichttransistorenmatrix für Flüssigkristallanzeige mit Testmöglichkeit während der Herstellung, Testmethode und Anordnung zur Informationseingabe mit einer solchen Matrix.Info
- Publication number
- DE3751111D1 DE3751111D1 DE3751111T DE3751111T DE3751111D1 DE 3751111 D1 DE3751111 D1 DE 3751111D1 DE 3751111 T DE3751111 T DE 3751111T DE 3751111 T DE3751111 T DE 3751111T DE 3751111 D1 DE3751111 D1 DE 3751111D1
- Authority
- DE
- Germany
- Prior art keywords
- matrix
- test
- arrangement
- liquid crystal
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011159 matrix material Substances 0.000 title 2
- 239000004973 liquid crystal related substance Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000010998 test method Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/265—Contactless testing
- G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1306—Details
- G02F1/1309—Repairing; Testing
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136254—Checking; Testing
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/103—Materials and properties semiconductor a-Si
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S345/00—Computer graphics processing and selective visual display systems
- Y10S345/904—Display with fail/safe testing feature
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Mathematical Physics (AREA)
- Health & Medical Sciences (AREA)
- Theoretical Computer Science (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal Display Device Control (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/945,935 US4819038A (en) | 1986-12-22 | 1986-12-22 | TFT array for liquid crystal displays allowing in-process testing |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3751111D1 true DE3751111D1 (de) | 1995-04-06 |
DE3751111T2 DE3751111T2 (de) | 1995-09-14 |
Family
ID=25483731
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3751111T Expired - Lifetime DE3751111T2 (de) | 1986-12-22 | 1987-12-01 | Dünnschichttransistorenmatrix für Flüssigkristallanzeige mit Testmöglichkeit während der Herstellung, Testmethode und Anordnung zur Informationseingabe mit einer solchen Matrix. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4819038A (de) |
EP (1) | EP0272506B1 (de) |
JP (1) | JP2559773B2 (de) |
DE (1) | DE3751111T2 (de) |
Families Citing this family (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0627985B2 (ja) * | 1987-05-06 | 1994-04-13 | 日本電気株式会社 | 薄膜トランジスタアレイ |
US5179345A (en) * | 1989-12-13 | 1993-01-12 | International Business Machines Corporation | Method and apparatus for analog testing |
JPH03227547A (ja) * | 1990-02-01 | 1991-10-08 | Mitsubishi Electric Corp | 半導体装置 |
US5057775A (en) * | 1990-05-04 | 1991-10-15 | Genrad, Inc. | Method of testing control matrices for flat-panel displays |
JPH04351972A (ja) * | 1990-04-26 | 1992-12-07 | Genrad Inc | フラットパネルディスプレイ用制御マトリックスの試験方法 |
US5075237A (en) * | 1990-07-26 | 1991-12-24 | Industrial Technology Research Institute | Process of making a high photosensitive depletion-gate thin film transistor |
US5196911A (en) * | 1990-07-26 | 1993-03-23 | Industrial Technology Research Institute | High photosensitive depletion-gate thin film transistor |
JPH04158238A (ja) * | 1990-10-22 | 1992-06-01 | Ezel Inc | 液晶パネルの検査方法 |
US5285150A (en) * | 1990-11-26 | 1994-02-08 | Photon Dynamics, Inc. | Method and apparatus for testing LCD panel array |
US5081687A (en) | 1990-11-30 | 1992-01-14 | Photon Dynamics, Inc. | Method and apparatus for testing LCD panel array prior to shorting bar removal |
US5206749A (en) * | 1990-12-31 | 1993-04-27 | Kopin Corporation | Liquid crystal display having essentially single crystal transistors pixels and driving circuits |
US5362671A (en) * | 1990-12-31 | 1994-11-08 | Kopin Corporation | Method of fabricating single crystal silicon arrayed devices for display panels |
US5258320A (en) * | 1990-12-31 | 1993-11-02 | Kopin Corporation | Single crystal silicon arrayed devices for display panels |
US5528397A (en) * | 1991-12-03 | 1996-06-18 | Kopin Corporation | Single crystal silicon transistors for display panels |
US5235272A (en) * | 1991-06-17 | 1993-08-10 | Photon Dynamics, Inc. | Method and apparatus for automatically inspecting and repairing an active matrix LCD panel |
US5175504A (en) * | 1991-06-17 | 1992-12-29 | Photon Dynamics, Inc. | Method and apparatus for automatically inspecting and repairing a simple matrix circuit panel |
US5432461A (en) * | 1991-06-28 | 1995-07-11 | Photon Dynamics, Inc. | Method of testing active matrix liquid crystal display substrates |
US5465052A (en) * | 1991-09-10 | 1995-11-07 | Photon Dynamics, Inc. | Method of testing liquid crystal display substrates |
US5543729A (en) * | 1991-09-10 | 1996-08-06 | Photon Dynamics, Inc. | Testing apparatus and connector for liquid crystal display substrates |
US5504438A (en) * | 1991-09-10 | 1996-04-02 | Photon Dynamics, Inc. | Testing method for imaging defects in a liquid crystal display substrate |
US5459409A (en) * | 1991-09-10 | 1995-10-17 | Photon Dynamics, Inc. | Testing device for liquid crystal display base plate |
US5444385A (en) * | 1991-09-10 | 1995-08-22 | Photon Dynamics, Inc. | Testing apparatus for liquid crystal display substrates |
US5184082A (en) * | 1991-09-18 | 1993-02-02 | Honeywell Inc. | Apparatus and method for testing an active matrix pixel display |
US5332893A (en) * | 1992-07-22 | 1994-07-26 | Minnesota Mining And Manufacturing Company | Imaging system and device having a simplified electrode design |
US5268569A (en) * | 1992-07-22 | 1993-12-07 | Minnesota Mining And Manufacturing Company | Imaging system having optimized electrode geometry and processing |
JPH06110069A (ja) * | 1992-09-29 | 1994-04-22 | Matsushita Electric Ind Co Ltd | 電子部品の欠陥修復方法および欠陥修復装置 |
US5546013A (en) * | 1993-03-05 | 1996-08-13 | International Business Machines Corporation | Array tester for determining contact quality and line integrity in a TFT/LCD |
ES2139656T3 (es) * | 1993-05-13 | 2000-02-16 | Carlos Jorge Ramiro Pr Augusto | Metodo para producir substratos semiconductores cristalinos de calidad vlsi. |
JP2889132B2 (ja) * | 1994-10-12 | 1999-05-10 | 株式会社フロンテック | 薄膜トランジスタの検査装置 |
US5744967A (en) * | 1995-08-24 | 1998-04-28 | Sorensen; Brent A. | Apparatus for detecting intermittent and continuous faults in multiple conductor wiring and terminations for electronic systems |
US6697037B1 (en) | 1996-04-29 | 2004-02-24 | International Business Machines Corporation | TFT LCD active data line repair |
JP3106953B2 (ja) * | 1996-05-16 | 2000-11-06 | 富士電機株式会社 | 表示素子駆動方法 |
US5952674A (en) * | 1998-03-18 | 1999-09-14 | International Business Machines Corporation | Topography monitor |
JP3107039B2 (ja) * | 1998-03-20 | 2000-11-06 | 日本電気株式会社 | 面光源プローバ装置及び検査方法 |
US6545500B1 (en) | 1999-12-08 | 2003-04-08 | John E. Field | Use of localized temperature change in determining the location and character of defects in flat-panel displays |
DE10227332A1 (de) * | 2002-06-19 | 2004-01-15 | Akt Electron Beam Technology Gmbh | Ansteuervorrichtung mit verbesserten Testeneigenschaften |
JP2004050650A (ja) * | 2002-07-19 | 2004-02-19 | Nec Corp | 半導体装置、画像出力装置、および機能素子の駆動方法 |
JP2004264349A (ja) * | 2003-02-07 | 2004-09-24 | Agilent Technol Inc | アクティブマトリクスディスプレイ回路基板、それを含むディスプレイパネル、その検査方法、及びそのための検査装置 |
JP3760411B2 (ja) * | 2003-05-21 | 2006-03-29 | インターナショナル・ビジネス・マシーンズ・コーポレーション | アクティブマトリックスパネルの検査装置、検査方法、およびアクティブマトリックスoledパネルの製造方法 |
CN100336099C (zh) * | 2003-09-10 | 2007-09-05 | 友达光电股份有限公司 | 具有电路连接测试设计的显示面板 |
US20050174139A1 (en) * | 2003-10-14 | 2005-08-11 | Mahendran Chidambaram | Apparatus for high speed probing of flat panel displays |
KR100987890B1 (ko) * | 2003-11-13 | 2010-10-13 | 엘지디스플레이 주식회사 | 액정표시소자의 검사장치 및 그 검사방법 |
US7319335B2 (en) * | 2004-02-12 | 2008-01-15 | Applied Materials, Inc. | Configurable prober for TFT LCD array testing |
US7355418B2 (en) * | 2004-02-12 | 2008-04-08 | Applied Materials, Inc. | Configurable prober for TFT LCD array test |
US20060038554A1 (en) * | 2004-02-12 | 2006-02-23 | Applied Materials, Inc. | Electron beam test system stage |
US6833717B1 (en) * | 2004-02-12 | 2004-12-21 | Applied Materials, Inc. | Electron beam test system with integrated substrate transfer module |
JP4281622B2 (ja) * | 2004-05-31 | 2009-06-17 | ソニー株式会社 | 表示装置及び検査方法 |
US7075323B2 (en) * | 2004-07-29 | 2006-07-11 | Applied Materials, Inc. | Large substrate test system |
US7256606B2 (en) * | 2004-08-03 | 2007-08-14 | Applied Materials, Inc. | Method for testing pixels for LCD TFT displays |
US7535238B2 (en) * | 2005-04-29 | 2009-05-19 | Applied Materials, Inc. | In-line electron beam test system |
WO2006120861A1 (ja) * | 2005-05-02 | 2006-11-16 | Shimadzu Corporation | Tftアレイ基板検査装置 |
US20060273815A1 (en) * | 2005-06-06 | 2006-12-07 | Applied Materials, Inc. | Substrate support with integrated prober drive |
US7394276B2 (en) * | 2006-01-17 | 2008-07-01 | International Business Machines Corporation | Active cancellation matrix for process parameter measurements |
US7569818B2 (en) * | 2006-03-14 | 2009-08-04 | Applied Materials, Inc. | Method to reduce cross talk in a multi column e-beam test system |
US7602199B2 (en) * | 2006-05-31 | 2009-10-13 | Applied Materials, Inc. | Mini-prober for TFT-LCD testing |
US7786742B2 (en) * | 2006-05-31 | 2010-08-31 | Applied Materials, Inc. | Prober for electronic device testing on large area substrates |
US20080251019A1 (en) * | 2007-04-12 | 2008-10-16 | Sriram Krishnaswami | System and method for transferring a substrate into and out of a reduced volume chamber accommodating multiple substrates |
JP5305730B2 (ja) | 2008-05-12 | 2013-10-02 | キヤノン株式会社 | 半導体素子の製造方法ならびにその製造装置 |
EP2442356B1 (de) * | 2009-06-09 | 2019-05-22 | Sharp Kabushiki Kaisha | Elektronische vorrichtung |
TWI457575B (zh) * | 2012-04-06 | 2014-10-21 | Ind Tech Res Inst | 具有自我測試的像素陣列模組及其自我測試方法 |
CN104166026A (zh) * | 2014-08-29 | 2014-11-26 | 苏州市吴中区胥口广博模具加工厂 | 一种小型显示屏点亮测试座 |
CN104637426B (zh) * | 2015-03-04 | 2017-04-05 | 京东方科技集团股份有限公司 | 负载测试电路、方法和显示装置 |
CN105609023B (zh) * | 2015-12-31 | 2018-08-07 | 京东方科技集团股份有限公司 | 一种测试元件组、阵列基板、检测设备及检测方法 |
CN116360168B (zh) * | 2023-05-11 | 2023-08-18 | 惠科股份有限公司 | 显示装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3801910A (en) * | 1972-07-03 | 1974-04-02 | Ibm | Externally accessing mechanical difficult to access circuit nodes using photo-responsive conductors in integrated circuits |
US3849872A (en) * | 1972-10-24 | 1974-11-26 | Ibm | Contacting integrated circuit chip terminal through the wafer kerf |
DE2256688B2 (de) * | 1972-11-18 | 1976-05-06 | Robert Bosch Gmbh, 7000 Stuttgart | Verfahren zum auftrennen von leiterbahnen auf integrierten schaltkreisen |
JPS58140781A (ja) * | 1982-02-17 | 1983-08-20 | 株式会社日立製作所 | 画像表示装置 |
JPS59201441A (ja) * | 1983-04-30 | 1984-11-15 | Toshiba Corp | 集束イオンビ−ムを用いたヒユ−ズ切断方法 |
CA1279127C (en) * | 1984-05-04 | 1991-01-15 | Vincent D. Cannella | Integrated radiation sensing array |
JPS61170724A (ja) * | 1985-01-25 | 1986-08-01 | Seiko Instr & Electronics Ltd | アクテイブマトリクス表示装置用基板 |
-
1986
- 1986-12-22 US US06/945,935 patent/US4819038A/en not_active Expired - Lifetime
-
1987
- 1987-11-10 JP JP62282290A patent/JP2559773B2/ja not_active Expired - Lifetime
- 1987-12-01 DE DE3751111T patent/DE3751111T2/de not_active Expired - Lifetime
- 1987-12-01 EP EP87117757A patent/EP0272506B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4819038A (en) | 1989-04-04 |
EP0272506A2 (de) | 1988-06-29 |
DE3751111T2 (de) | 1995-09-14 |
EP0272506A3 (de) | 1991-05-29 |
JP2559773B2 (ja) | 1996-12-04 |
EP0272506B1 (de) | 1995-03-01 |
JPS63167333A (ja) | 1988-07-11 |
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