DE3750573D1 - Dünnschicht-Transistoranordnung für Anzeigetafel aus Flüssigkristallen. - Google Patents

Dünnschicht-Transistoranordnung für Anzeigetafel aus Flüssigkristallen.

Info

Publication number
DE3750573D1
DE3750573D1 DE3750573T DE3750573T DE3750573D1 DE 3750573 D1 DE3750573 D1 DE 3750573D1 DE 3750573 T DE3750573 T DE 3750573T DE 3750573 T DE3750573 T DE 3750573T DE 3750573 D1 DE3750573 D1 DE 3750573D1
Authority
DE
Germany
Prior art keywords
liquid crystal
thin film
crystal display
display panel
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3750573T
Other languages
English (en)
Other versions
DE3750573T2 (de
Inventor
Kesao C O Nec Corporat Noguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE3750573D1 publication Critical patent/DE3750573D1/de
Application granted granted Critical
Publication of DE3750573T2 publication Critical patent/DE3750573T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G02F1/136263—Line defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/103—Materials and properties semiconductor a-Si
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/104—Materials and properties semiconductor poly-Si

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE3750573T 1986-11-27 1987-11-27 Dünnschicht-Transistoranordnung für Anzeigetafel aus Flüssigkristallen. Expired - Fee Related DE3750573T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61283320A JPH0691252B2 (ja) 1986-11-27 1986-11-27 薄膜トランジスタアレイ

Publications (2)

Publication Number Publication Date
DE3750573D1 true DE3750573D1 (de) 1994-10-27
DE3750573T2 DE3750573T2 (de) 1995-05-11

Family

ID=17663937

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3750573T Expired - Fee Related DE3750573T2 (de) 1986-11-27 1987-11-27 Dünnschicht-Transistoranordnung für Anzeigetafel aus Flüssigkristallen.

Country Status (4)

Country Link
US (1) US4821092A (de)
EP (1) EP0269123B1 (de)
JP (1) JPH0691252B2 (de)
DE (1) DE3750573T2 (de)

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US5327001A (en) * 1987-09-09 1994-07-05 Casio Computer Co., Ltd. Thin film transistor array having single light shield layer over transistors and gate and drain lines
US5229644A (en) * 1987-09-09 1993-07-20 Casio Computer Co., Ltd. Thin film transistor having a transparent electrode and substrate
US5032883A (en) * 1987-09-09 1991-07-16 Casio Computer Co., Ltd. Thin film transistor and method of manufacturing the same
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JPH01217325A (ja) * 1988-02-25 1989-08-30 Sharp Corp 液晶表示装置
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JPH0797602B2 (ja) * 1988-05-06 1995-10-18 日本電気株式会社 半導体集積回路装置
FR2631743A1 (fr) * 1988-05-23 1989-11-24 Gen Electric Structure a electrodes non coplanaires pour affichage matriciel a cristaux liquides a transistors en couches minces de silicium amorphe et procede de fabrication
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JP2600929B2 (ja) * 1989-01-27 1997-04-16 松下電器産業株式会社 液晶画像表示装置およびその製造方法
DE4090273C1 (de) * 1989-03-01 1996-09-26 Mitsubishi Electric Corp Dünnfilmtransistor
JP2952887B2 (ja) * 1989-05-20 1999-09-27 富士通株式会社 半導体装置およびその製造方法
US5225364A (en) * 1989-06-26 1993-07-06 Oki Electric Industry Co., Ltd. Method of fabricating a thin-film transistor matrix for an active matrix display panel
JP2558351B2 (ja) * 1989-06-29 1996-11-27 沖電気工業株式会社 アクティブマトリクス表示パネル
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US5212574A (en) * 1989-07-05 1993-05-18 Sharp Kabushiki Kaisha Active matrix board having double-layer scan lines and capacity lines with discontinuous lower scan lines and lower capacity lines
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JPH0824193B2 (ja) * 1990-10-16 1996-03-06 工業技術院長 平板型光弁駆動用半導体装置の製造方法
US5402254B1 (en) * 1990-10-17 1998-09-22 Hitachi Ltd Liquid crystal display device with tfts in which pixel electrodes are formed in the same plane as the gate electrodes with anodized oxide films before the deposition of silicon
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JPH1020331A (ja) * 1996-06-28 1998-01-23 Sharp Corp 液晶表示装置
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KR101080356B1 (ko) * 2003-10-13 2011-11-04 삼성전자주식회사 박막 트랜지스터, 박막 트랜지스터 표시판 및 표시 장치
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US9939706B2 (en) 2013-03-26 2018-04-10 Clearink Displays, Inc. Displaced porous electrode for frustrating TIR and returning light through exit pupil
US9280029B2 (en) 2013-05-13 2016-03-08 Clearink Displays, Inc. Registered reflective element for a brightness enhanced TIR display
US10203436B2 (en) 2013-05-22 2019-02-12 Clearink Displays, Inc. Method and apparatus for improved color filter saturation
US10705404B2 (en) 2013-07-08 2020-07-07 Concord (Hk) International Education Limited TIR-modulated wide viewing angle display
CN105474085A (zh) 2013-07-08 2016-04-06 清墨显示股份有限公司 Tir调制宽视角显示器
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Also Published As

Publication number Publication date
US4821092A (en) 1989-04-11
EP0269123A3 (en) 1990-10-10
JPS63136571A (ja) 1988-06-08
EP0269123A2 (de) 1988-06-01
DE3750573T2 (de) 1995-05-11
JPH0691252B2 (ja) 1994-11-14
EP0269123B1 (de) 1994-09-21

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