DE3739804A1 - Dynamische speichergruppierung mit wahlfreiem zugriff - Google Patents

Dynamische speichergruppierung mit wahlfreiem zugriff

Info

Publication number
DE3739804A1
DE3739804A1 DE19873739804 DE3739804A DE3739804A1 DE 3739804 A1 DE3739804 A1 DE 3739804A1 DE 19873739804 DE19873739804 DE 19873739804 DE 3739804 A DE3739804 A DE 3739804A DE 3739804 A1 DE3739804 A1 DE 3739804A1
Authority
DE
Germany
Prior art keywords
memory cell
bit lines
lines
bit
dram
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19873739804
Other languages
German (de)
English (en)
Inventor
Dong-Soo Jun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Semiconductor and Telecomunications Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Semiconductor and Telecomunications Co Ltd filed Critical Samsung Semiconductor and Telecomunications Co Ltd
Publication of DE3739804A1 publication Critical patent/DE3739804A1/de
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4099—Dummy cell treatment; Reference voltage generators
DE19873739804 1986-11-24 1987-11-24 Dynamische speichergruppierung mit wahlfreiem zugriff Ceased DE3739804A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019860009912A KR890003372B1 (ko) 1986-11-24 1986-11-24 다이나믹 랜덤 액세스 메모리 어레이

Publications (1)

Publication Number Publication Date
DE3739804A1 true DE3739804A1 (de) 1988-06-23

Family

ID=19253555

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19873739804 Ceased DE3739804A1 (de) 1986-11-24 1987-11-24 Dynamische speichergruppierung mit wahlfreiem zugriff

Country Status (6)

Country Link
JP (1) JPS63155493A (ja)
KR (1) KR890003372B1 (ja)
DE (1) DE3739804A1 (ja)
GB (1) GB2200004B (ja)
HK (1) HK20091A (ja)
SG (1) SG7491G (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19740950B4 (de) * 1996-12-31 2007-12-06 LG Semicon Co., Ltd., Cheongju Halbleiterspeicher und Verfahren zum Herstellen desselben

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2534700B2 (ja) * 1987-04-02 1996-09-18 日本電気株式会社 半導体記憶装置
JPH0261889A (ja) * 1988-08-25 1990-03-01 Nec Corp 半導体メモリ
JP2650377B2 (ja) * 1988-12-13 1997-09-03 富士通株式会社 半導体集積回路

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3247538A1 (de) * 1981-12-25 1983-08-04 Hitachi Microcomputer Engineering Ltd., Tokyo Integrierte dynamische speicherschaltungsvorrichtung mit direktem zugriff

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0760858B2 (ja) * 1984-10-26 1995-06-28 三菱電機株式会社 半導体メモリ装置
JPS61194771A (ja) * 1985-02-25 1986-08-29 Hitachi Ltd 半導体記憶装置
JPH0666442B2 (ja) * 1985-03-08 1994-08-24 三菱電機株式会社 半導体メモリ装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3247538A1 (de) * 1981-12-25 1983-08-04 Hitachi Microcomputer Engineering Ltd., Tokyo Integrierte dynamische speicherschaltungsvorrichtung mit direktem zugriff

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19740950B4 (de) * 1996-12-31 2007-12-06 LG Semicon Co., Ltd., Cheongju Halbleiterspeicher und Verfahren zum Herstellen desselben

Also Published As

Publication number Publication date
GB2200004B (en) 1990-09-26
GB2200004A (en) 1988-07-20
JPS63155493A (ja) 1988-06-28
SG7491G (en) 1991-04-05
GB8727456D0 (en) 1987-12-23
HK20091A (en) 1991-03-28
KR880006697A (ko) 1988-07-23
KR890003372B1 (ko) 1989-09-19

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8127 New person/name/address of the applicant

Owner name: SAMSUNG ELECTRONICS CO., LTD., SUWON, KR

8131 Rejection