GB8727456D0 - Dynamic random access memory array - Google Patents

Dynamic random access memory array

Info

Publication number
GB8727456D0
GB8727456D0 GB878727456A GB8727456A GB8727456D0 GB 8727456 D0 GB8727456 D0 GB 8727456D0 GB 878727456 A GB878727456 A GB 878727456A GB 8727456 A GB8727456 A GB 8727456A GB 8727456 D0 GB8727456 D0 GB 8727456D0
Authority
GB
United Kingdom
Prior art keywords
random access
access memory
memory array
dynamic random
dynamic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB878727456A
Other versions
GB2200004B (en
GB2200004A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Semiconductor and Telecomunications Co Ltd
Original Assignee
Samsung Semiconductor and Telecomunications Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Semiconductor and Telecomunications Co Ltd filed Critical Samsung Semiconductor and Telecomunications Co Ltd
Publication of GB8727456D0 publication Critical patent/GB8727456D0/en
Publication of GB2200004A publication Critical patent/GB2200004A/en
Application granted granted Critical
Publication of GB2200004B publication Critical patent/GB2200004B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4099—Dummy cell treatment; Reference voltage generators
GB8727456A 1986-11-24 1987-11-24 Dynamic random access memory array Expired - Lifetime GB2200004B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019860009912A KR890003372B1 (en) 1986-11-24 1986-11-24 Dram access memory array

Publications (3)

Publication Number Publication Date
GB8727456D0 true GB8727456D0 (en) 1987-12-23
GB2200004A GB2200004A (en) 1988-07-20
GB2200004B GB2200004B (en) 1990-09-26

Family

ID=19253555

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8727456A Expired - Lifetime GB2200004B (en) 1986-11-24 1987-11-24 Dynamic random access memory array

Country Status (6)

Country Link
JP (1) JPS63155493A (en)
KR (1) KR890003372B1 (en)
DE (1) DE3739804A1 (en)
GB (1) GB2200004B (en)
HK (1) HK20091A (en)
SG (1) SG7491G (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2534700B2 (en) * 1987-04-02 1996-09-18 日本電気株式会社 Semiconductor memory device
JPH0261889A (en) * 1988-08-25 1990-03-01 Nec Corp Semiconductor memory
JP2650377B2 (en) * 1988-12-13 1997-09-03 富士通株式会社 Semiconductor integrated circuit
KR100223890B1 (en) * 1996-12-31 1999-10-15 구본준 Semiconductor memory device and manufacturing method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58111183A (en) * 1981-12-25 1983-07-02 Hitachi Ltd Dynamic ram integrated circuit device
JPH0760858B2 (en) * 1984-10-26 1995-06-28 三菱電機株式会社 Semiconductor memory device
JPS61194771A (en) * 1985-02-25 1986-08-29 Hitachi Ltd Semiconductor memory
JPH0666442B2 (en) * 1985-03-08 1994-08-24 三菱電機株式会社 Semiconductor memory device

Also Published As

Publication number Publication date
JPS63155493A (en) 1988-06-28
GB2200004B (en) 1990-09-26
SG7491G (en) 1991-04-05
HK20091A (en) 1991-03-28
KR890003372B1 (en) 1989-09-19
KR880006697A (en) 1988-07-23
DE3739804A1 (en) 1988-06-23
GB2200004A (en) 1988-07-20

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Legal Events

Date Code Title Description
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20061124