SG7491G - Dynamic random access memory array - Google Patents

Dynamic random access memory array

Info

Publication number
SG7491G
SG7491G SG74/91A SG7491A SG7491G SG 7491 G SG7491 G SG 7491G SG 74/91 A SG74/91 A SG 74/91A SG 7491 A SG7491 A SG 7491A SG 7491 G SG7491 G SG 7491G
Authority
SG
Singapore
Prior art keywords
random access
access memory
memory array
dynamic random
dynamic
Prior art date
Application number
SG74/91A
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of SG7491G publication Critical patent/SG7491G/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4099—Dummy cell treatment; Reference voltage generators
SG74/91A 1986-11-24 1991-02-12 Dynamic random access memory array SG7491G (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019860009912A KR890003372B1 (en) 1986-11-24 1986-11-24 Dram access memory array

Publications (1)

Publication Number Publication Date
SG7491G true SG7491G (en) 1991-04-05

Family

ID=19253555

Family Applications (1)

Application Number Title Priority Date Filing Date
SG74/91A SG7491G (en) 1986-11-24 1991-02-12 Dynamic random access memory array

Country Status (6)

Country Link
JP (1) JPS63155493A (en)
KR (1) KR890003372B1 (en)
DE (1) DE3739804A1 (en)
GB (1) GB2200004B (en)
HK (1) HK20091A (en)
SG (1) SG7491G (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2534700B2 (en) * 1987-04-02 1996-09-18 日本電気株式会社 Semiconductor memory device
JPH0261889A (en) * 1988-08-25 1990-03-01 Nec Corp Semiconductor memory
JP2650377B2 (en) * 1988-12-13 1997-09-03 富士通株式会社 Semiconductor integrated circuit
KR100223890B1 (en) * 1996-12-31 1999-10-15 구본준 Semiconductor memory device and manufacturing method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58111183A (en) * 1981-12-25 1983-07-02 Hitachi Ltd Dynamic ram integrated circuit device
JPH0760858B2 (en) * 1984-10-26 1995-06-28 三菱電機株式会社 Semiconductor memory device
JPS61194771A (en) * 1985-02-25 1986-08-29 Hitachi Ltd Semiconductor memory
JPH0666442B2 (en) * 1985-03-08 1994-08-24 三菱電機株式会社 Semiconductor memory device

Also Published As

Publication number Publication date
GB8727456D0 (en) 1987-12-23
JPS63155493A (en) 1988-06-28
GB2200004B (en) 1990-09-26
HK20091A (en) 1991-03-28
KR890003372B1 (en) 1989-09-19
KR880006697A (en) 1988-07-23
DE3739804A1 (en) 1988-06-23
GB2200004A (en) 1988-07-20

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