EP0325026A3 - Dynamic random-access memory - Google Patents

Dynamic random-access memory Download PDF

Info

Publication number
EP0325026A3
EP0325026A3 EP88310148A EP88310148A EP0325026A3 EP 0325026 A3 EP0325026 A3 EP 0325026A3 EP 88310148 A EP88310148 A EP 88310148A EP 88310148 A EP88310148 A EP 88310148A EP 0325026 A3 EP0325026 A3 EP 0325026A3
Authority
EP
European Patent Office
Prior art keywords
access memory
dynamic random
random
dynamic
access
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP88310148A
Other versions
EP0325026B1 (en
EP0325026A2 (en
Inventor
Jonathan Michael Hanbury
Keith Burton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Services Ltd
Original Assignee
Fujitsu Services Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Services Ltd filed Critical Fujitsu Services Ltd
Publication of EP0325026A2 publication Critical patent/EP0325026A2/en
Publication of EP0325026A3 publication Critical patent/EP0325026A3/en
Application granted granted Critical
Publication of EP0325026B1 publication Critical patent/EP0325026B1/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
EP88310148A 1988-01-22 1988-10-28 Dynamic random-access memory Expired EP0325026B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB888801472A GB8801472D0 (en) 1988-01-22 1988-01-22 Dynamic random-access memory
GB8801472 1988-01-22

Publications (3)

Publication Number Publication Date
EP0325026A2 EP0325026A2 (en) 1989-07-26
EP0325026A3 true EP0325026A3 (en) 1990-05-09
EP0325026B1 EP0325026B1 (en) 1992-12-02

Family

ID=10630396

Family Applications (1)

Application Number Title Priority Date Filing Date
EP88310148A Expired EP0325026B1 (en) 1988-01-22 1988-10-28 Dynamic random-access memory

Country Status (4)

Country Link
US (1) US4901283A (en)
EP (1) EP0325026B1 (en)
DE (1) DE3876415T2 (en)
GB (1) GB8801472D0 (en)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2008071A1 (en) * 1989-01-27 1990-07-27 Jeffrey S. Watters Pump bus to avoid indeterminacy in reading variable bit field
US5430681A (en) * 1989-05-08 1995-07-04 Hitachi Maxell, Ltd. Memory cartridge and its memory control method
US5041964A (en) * 1989-06-12 1991-08-20 Grid Systems Corporation Low-power, standby mode computer
US5204840A (en) * 1989-08-08 1993-04-20 Mazur Jeffrey G Means and methods for preserving microprocessor memory
JPH0390942A (en) * 1989-09-01 1991-04-16 Oki Electric Ind Co Ltd Control system for main storage device
US5390333A (en) * 1990-02-06 1995-02-14 Alcatel Network Systems, Inc. Switch array power reduction apparatus
JP3225531B2 (en) * 1990-05-15 2001-11-05 セイコーエプソン株式会社 Memory card
JPH04107623A (en) * 1990-08-28 1992-04-09 Seiko Epson Corp Display device
JPH04109488A (en) * 1990-08-29 1992-04-10 Mitsubishi Electric Corp Dynamic type semiconductor storage device
EP0473421B1 (en) * 1990-08-30 1997-10-29 Nec Corporation Semiconductor memory device
JPH06502510A (en) * 1990-10-12 1994-03-17 インテル・コーポレーション Slow memory refresh on computers with limited power supplies
US5430881A (en) * 1990-12-28 1995-07-04 Dia Semicon Systems Incorporated Supervisory control method and power saving control unit for computer system
US5229969A (en) * 1991-04-15 1993-07-20 Micron Technology, Inc. Method for synchronizing refresh cycles in self-refreshing DRAMs having timing circuit shutdown
GB2256735B (en) * 1991-06-12 1995-06-21 Intel Corp Non-volatile disk cache
GB2261753B (en) * 1991-11-19 1995-07-12 Intel Corp Multi-mode microprocessor with electrical pin for selective re-initialization of processor state
US5274828A (en) * 1992-02-24 1993-12-28 Texas Instruments Incorporated Computer including an integrated circuit having an on-chip high voltage source
US5781784A (en) * 1992-07-09 1998-07-14 Zilog, Inc. Dynamic power management of solid state memories
JPH06124587A (en) * 1992-10-09 1994-05-06 Mitsubishi Electric Corp Dynamic random access memory device
US5421005A (en) * 1992-12-02 1995-05-30 Fiset; Peter D. Alternate DRAM refresh controlled by signal period detector
AU6988494A (en) * 1993-05-28 1994-12-20 Rambus Inc. Method and apparatus for implementing refresh in a synchronous dram system
US5392251A (en) * 1993-07-13 1995-02-21 Micron Semiconductor, Inc. Controlling dynamic memory refresh cycle time
JP3759758B2 (en) * 1994-02-03 2006-03-29 株式会社ルネサステクノロジ Semiconductor memory device
US5438549A (en) * 1994-02-28 1995-08-01 Intel Corporation Nonvolatile memory with volatile memory buffer and a backup power supply system
US6175952B1 (en) * 1997-05-27 2001-01-16 Altera Corporation Technique of fabricating integrated circuits having interfaces compatible with different operating voltage conditions
US6025737A (en) * 1996-11-27 2000-02-15 Altera Corporation Circuitry for a low internal voltage integrated circuit
US6118302A (en) * 1996-05-28 2000-09-12 Altera Corporation Interface for low-voltage semiconductor devices
US5712825A (en) * 1996-10-09 1998-01-27 International Business Machines Corporation Maintaining data integrity in DRAM while varying operating voltages
KR100243335B1 (en) * 1996-12-31 2000-02-01 김영환 Daisy chain type memory device having refresh circuit
US6266379B1 (en) 1997-06-20 2001-07-24 Massachusetts Institute Of Technology Digital transmitter with equalization
US6255850B1 (en) 1997-10-28 2001-07-03 Altera Corporation Integrated circuit with both clamp protection and high impedance protection from input overshoot
US6134167A (en) * 1998-06-04 2000-10-17 Compaq Computer Corporation Reducing power consumption in computer memory
US6112306A (en) * 1998-10-06 2000-08-29 Intel Corporation Self-synchronizing method and apparatus for exiting dynamic random access memory from a low power state
US6201751B1 (en) * 1999-03-08 2001-03-13 Micron Technology, Inc. Integrated circuit power-up controllers, integrated circuit power-up circuits, and integrated circuit power-up methods
US6243315B1 (en) 1999-12-31 2001-06-05 James B. Goodman Computer memory system with a low power down mode
KR100413761B1 (en) * 2001-05-31 2003-12-31 삼성전자주식회사 Semiconductor memory device capable of controlling refresh cycle by variation of temperature and process and method thereof
US7177222B2 (en) * 2005-03-04 2007-02-13 Seagate Technology Llc Reducing power consumption in a data storage system
EP1953619B1 (en) * 2007-02-01 2015-04-01 Siemens Aktiengesellschaft Method for saving data in a data processing system and data processing system

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4313180A (en) * 1979-01-30 1982-01-26 Sharp Kabushiki Kaisha Refresh system for a dynamic memory
EP0128427A2 (en) * 1983-06-06 1984-12-19 Hitachi, Ltd. Semiconductor memory having circuit effecting refresh on variable cycles

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4316248A (en) * 1978-12-06 1982-02-16 Data General Corporation Memory refresh means including means for providing refresh addresses during power failures
JPS59162690A (en) * 1983-03-04 1984-09-13 Nec Corp Artificial static memory
US4631701A (en) * 1983-10-31 1986-12-23 Ncr Corporation Dynamic random access memory refresh control system
US4625296A (en) * 1984-01-17 1986-11-25 The Perkin-Elmer Corporation Memory refresh circuit with varying system transparency
JPS60237522A (en) * 1984-05-10 1985-11-26 Fujitsu Ltd Logical circuit device
US4701843A (en) * 1985-04-01 1987-10-20 Ncr Corporation Refresh system for a page addressable memory
US4754425A (en) * 1985-10-18 1988-06-28 Gte Communication Systems Corporation Dynamic random access memory refresh circuit selectively adapted to different clock frequencies

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4313180A (en) * 1979-01-30 1982-01-26 Sharp Kabushiki Kaisha Refresh system for a dynamic memory
EP0128427A2 (en) * 1983-06-06 1984-12-19 Hitachi, Ltd. Semiconductor memory having circuit effecting refresh on variable cycles

Also Published As

Publication number Publication date
GB8801472D0 (en) 1988-02-24
EP0325026B1 (en) 1992-12-02
EP0325026A2 (en) 1989-07-26
DE3876415T2 (en) 1993-06-09
DE3876415D1 (en) 1993-01-14
US4901283A (en) 1990-02-13

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