DE3720750A1 - Galliumarsenid-solarzelle und verfahren zu ihrer herstellung - Google Patents
Galliumarsenid-solarzelle und verfahren zu ihrer herstellungInfo
- Publication number
- DE3720750A1 DE3720750A1 DE19873720750 DE3720750A DE3720750A1 DE 3720750 A1 DE3720750 A1 DE 3720750A1 DE 19873720750 DE19873720750 DE 19873720750 DE 3720750 A DE3720750 A DE 3720750A DE 3720750 A1 DE3720750 A1 DE 3720750A1
- Authority
- DE
- Germany
- Prior art keywords
- type
- gallium arsenide
- layer
- solar cell
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 79
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000000034 method Methods 0.000 title abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000011777 magnesium Substances 0.000 claims abstract description 17
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 16
- 239000002019 doping agent Substances 0.000 claims abstract description 15
- 239000013078 crystal Substances 0.000 claims abstract description 12
- 239000007788 liquid Substances 0.000 claims abstract description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229920006395 saturated elastomer Polymers 0.000 claims abstract description 3
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract description 2
- 239000004411 aluminium Substances 0.000 abstract 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 238000005192 partition Methods 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 241001676573 Minium Species 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61162517A JPS6316680A (ja) | 1986-07-08 | 1986-07-08 | GaAs太陽電池およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3720750A1 true DE3720750A1 (de) | 1988-01-21 |
DE3720750C2 DE3720750C2 (enrdf_load_stackoverflow) | 1989-10-12 |
Family
ID=15756126
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19873720750 Granted DE3720750A1 (de) | 1986-07-08 | 1987-06-23 | Galliumarsenid-solarzelle und verfahren zu ihrer herstellung |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS6316680A (enrdf_load_stackoverflow) |
DE (1) | DE3720750A1 (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2219621C1 (ru) * | 2002-07-12 | 2003-12-20 | Открытое акционерное общество "Сатурн" | Способ изготовления фотопреобразователя |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10334522A1 (de) * | 2003-07-29 | 2005-02-17 | Vishay Semiconductor Gmbh | Flüssigphasenepitaktische Herstellung einer Halbleiteranordnung |
CN105023962B (zh) * | 2015-07-30 | 2017-03-08 | 华南理工大学 | 一种生长在Si衬底上的GaAs薄膜及其制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2022458A1 (de) * | 1969-06-30 | 1971-01-07 | Ibm | Wandler zur Umformung elektromagnetischer Strahlungsenergie in elektrische Energie und Verfahren zur Herstellung |
DE2735937C2 (de) * | 1976-11-22 | 1985-05-30 | International Business Machines Corp., Armonk, N.Y. | Flüssigphasenepitaxie-Verfahren zur Herstellung von Halbleiter-Heterostrukturen |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59189682A (ja) * | 1983-04-12 | 1984-10-27 | Sharp Corp | GaAs太陽電池 |
JPS60200576A (ja) * | 1984-03-24 | 1985-10-11 | Mitsubishi Electric Corp | ヒ化ガリウム半導体装置 |
-
1986
- 1986-07-08 JP JP61162517A patent/JPS6316680A/ja active Pending
-
1987
- 1987-06-23 DE DE19873720750 patent/DE3720750A1/de active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2022458A1 (de) * | 1969-06-30 | 1971-01-07 | Ibm | Wandler zur Umformung elektromagnetischer Strahlungsenergie in elektrische Energie und Verfahren zur Herstellung |
DE2735937C2 (de) * | 1976-11-22 | 1985-05-30 | International Business Machines Corp., Armonk, N.Y. | Flüssigphasenepitaxie-Verfahren zur Herstellung von Halbleiter-Heterostrukturen |
Non-Patent Citations (7)
Title |
---|
US-B.: 15 th IEEE Photovoltaic Specialists Conference, 1981, S. 239-240 * |
US-Z.: Appl. Phys. Lett., Bd. 33, 1978, S. 196-198 * |
US-Z.: Appl. Phys. Lett., Bd. 47, 1985, S. 762-764 * |
US-Z.: IBM Technical Disclosure Bulletin, Vol. 19, No. 6, 1976, S. 2289 * |
US-Z.: IEEE Transactions on Electron Devices, Bd. ED-27, 1980, S. 857-864 * |
US-Z.: J. Appl. Phys., Bd. 57, 1985, S. 537-544 * |
US-Z.: J. Electrochem. Soc., Vol. 120, Nr. 9, 1973, S. 1246-1252 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2219621C1 (ru) * | 2002-07-12 | 2003-12-20 | Открытое акционерное общество "Сатурн" | Способ изготовления фотопреобразователя |
Also Published As
Publication number | Publication date |
---|---|
DE3720750C2 (enrdf_load_stackoverflow) | 1989-10-12 |
JPS6316680A (ja) | 1988-01-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
D2 | Grant after examination | ||
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |