DE3720750C2 - - Google Patents

Info

Publication number
DE3720750C2
DE3720750C2 DE3720750A DE3720750A DE3720750C2 DE 3720750 C2 DE3720750 C2 DE 3720750C2 DE 3720750 A DE3720750 A DE 3720750A DE 3720750 A DE3720750 A DE 3720750A DE 3720750 C2 DE3720750 C2 DE 3720750C2
Authority
DE
Germany
Prior art keywords
type
gallium arsenide
layer
gaas
solar cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3720750A
Other languages
German (de)
English (en)
Other versions
DE3720750A1 (de
Inventor
Susumu Itami Hyogo Jp Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3720750A1 publication Critical patent/DE3720750A1/de
Application granted granted Critical
Publication of DE3720750C2 publication Critical patent/DE3720750C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
DE19873720750 1986-07-08 1987-06-23 Galliumarsenid-solarzelle und verfahren zu ihrer herstellung Granted DE3720750A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61162517A JPS6316680A (ja) 1986-07-08 1986-07-08 ＧａＡｓ太陽電池およびその製造方法

Publications (2)

Publication Number Publication Date
DE3720750A1 DE3720750A1 (de) 1988-01-21
DE3720750C2 true DE3720750C2 (enrdf_load_stackoverflow) 1989-10-12

Family

ID=15756126

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19873720750 Granted DE3720750A1 (de) 1986-07-08 1987-06-23 Galliumarsenid-solarzelle und verfahren zu ihrer herstellung

Country Status (2)

Country Link
JP (1) JPS6316680A (enrdf_load_stackoverflow)
DE (1) DE3720750A1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10334522A1 (de) * 2003-07-29 2005-02-17 Vishay Semiconductor Gmbh Flüssigphasenepitaktische Herstellung einer Halbleiteranordnung

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2219621C1 (ru) * 2002-07-12 2003-12-20 Открытое акционерное общество "Сатурн" Способ изготовления фотопреобразователя
CN105023962B (zh) * 2015-07-30 2017-03-08 华南理工大学 一种生长在Si衬底上的GaAs薄膜及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3675026A (en) * 1969-06-30 1972-07-04 Ibm Converter of electromagnetic radiation to electrical power
US4122476A (en) * 1976-11-22 1978-10-24 International Business Machines Corporation Semiconductor heterostructure
JPS59189682A (ja) * 1983-04-12 1984-10-27 Sharp Corp ＧａＡｓ太陽電池
JPS60200576A (ja) * 1984-03-24 1985-10-11 Mitsubishi Electric Corp ヒ化ガリウム半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10334522A1 (de) * 2003-07-29 2005-02-17 Vishay Semiconductor Gmbh Flüssigphasenepitaktische Herstellung einer Halbleiteranordnung

Also Published As

Publication number Publication date
JPS6316680A (ja) 1988-01-23
DE3720750A1 (de) 1988-01-21

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee