DE3672627D1 - Integrierte halbleiterschaltung mit zwei epitaxieschichten aus verschiedenen leitungstypen. - Google Patents

Integrierte halbleiterschaltung mit zwei epitaxieschichten aus verschiedenen leitungstypen.

Info

Publication number
DE3672627D1
DE3672627D1 DE8686102409T DE3672627T DE3672627D1 DE 3672627 D1 DE3672627 D1 DE 3672627D1 DE 8686102409 T DE8686102409 T DE 8686102409T DE 3672627 T DE3672627 T DE 3672627T DE 3672627 D1 DE3672627 D1 DE 3672627D1
Authority
DE
Germany
Prior art keywords
semiconductor circuit
epitaxial layers
integrated semiconductor
different cable
cable types
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686102409T
Other languages
English (en)
Inventor
Marc Herbert Brodsky
Frank Fu Fang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3672627D1 publication Critical patent/DE3672627D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE8686102409T 1985-03-04 1986-02-25 Integrierte halbleiterschaltung mit zwei epitaxieschichten aus verschiedenen leitungstypen. Expired - Fee Related DE3672627D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US70813285A 1985-03-04 1985-03-04

Publications (1)

Publication Number Publication Date
DE3672627D1 true DE3672627D1 (de) 1990-08-23

Family

ID=24844495

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686102409T Expired - Fee Related DE3672627D1 (de) 1985-03-04 1986-02-25 Integrierte halbleiterschaltung mit zwei epitaxieschichten aus verschiedenen leitungstypen.

Country Status (3)

Country Link
EP (1) EP0193842B1 (de)
JP (1) JPS61204961A (de)
DE (1) DE3672627D1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6213063A (ja) * 1985-07-11 1987-01-21 Nec Corp 化合物半導体多層集積回路
US4812886A (en) * 1987-02-09 1989-03-14 International Business Machines Corporation Multilayer contact apparatus and method
US7592841B2 (en) 2006-05-11 2009-09-22 Dsm Solutions, Inc. Circuit configurations having four terminal JFET devices
US7646233B2 (en) 2006-05-11 2010-01-12 Dsm Solutions, Inc. Level shifting circuit having junction field effect transistors
US7764137B2 (en) 2006-09-28 2010-07-27 Suvolta, Inc. Circuit and method for generating electrical solutions with junction field effect transistors
US7525163B2 (en) * 2006-10-31 2009-04-28 Dsm Solutions, Inc. Semiconductor device, design method and structure
US7727821B2 (en) 2007-05-01 2010-06-01 Suvolta, Inc. Image sensing cell, device, method of operation, and method of manufacture
US7692220B2 (en) 2007-05-01 2010-04-06 Suvolta, Inc. Semiconductor device storage cell structure, method of operation, and method of manufacture
US7629812B2 (en) 2007-08-03 2009-12-08 Dsm Solutions, Inc. Switching circuits and methods for programmable logic devices

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915668B1 (de) * 1969-04-15 1974-04-16

Also Published As

Publication number Publication date
JPS61204961A (ja) 1986-09-11
EP0193842B1 (de) 1990-07-18
EP0193842A3 (en) 1987-05-13
EP0193842A2 (de) 1986-09-10
JPH0347744B2 (de) 1991-07-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee