DE3672627D1 - Integrierte halbleiterschaltung mit zwei epitaxieschichten aus verschiedenen leitungstypen. - Google Patents
Integrierte halbleiterschaltung mit zwei epitaxieschichten aus verschiedenen leitungstypen.Info
- Publication number
- DE3672627D1 DE3672627D1 DE8686102409T DE3672627T DE3672627D1 DE 3672627 D1 DE3672627 D1 DE 3672627D1 DE 8686102409 T DE8686102409 T DE 8686102409T DE 3672627 T DE3672627 T DE 3672627T DE 3672627 D1 DE3672627 D1 DE 3672627D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor circuit
- epitaxial layers
- integrated semiconductor
- different cable
- cable types
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Junction Field-Effect Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US70813285A | 1985-03-04 | 1985-03-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3672627D1 true DE3672627D1 (de) | 1990-08-23 |
Family
ID=24844495
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686102409T Expired - Fee Related DE3672627D1 (de) | 1985-03-04 | 1986-02-25 | Integrierte halbleiterschaltung mit zwei epitaxieschichten aus verschiedenen leitungstypen. |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0193842B1 (de) |
JP (1) | JPS61204961A (de) |
DE (1) | DE3672627D1 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6213063A (ja) * | 1985-07-11 | 1987-01-21 | Nec Corp | 化合物半導体多層集積回路 |
US4812886A (en) * | 1987-02-09 | 1989-03-14 | International Business Machines Corporation | Multilayer contact apparatus and method |
US7592841B2 (en) | 2006-05-11 | 2009-09-22 | Dsm Solutions, Inc. | Circuit configurations having four terminal JFET devices |
US7646233B2 (en) | 2006-05-11 | 2010-01-12 | Dsm Solutions, Inc. | Level shifting circuit having junction field effect transistors |
US7764137B2 (en) | 2006-09-28 | 2010-07-27 | Suvolta, Inc. | Circuit and method for generating electrical solutions with junction field effect transistors |
US7525163B2 (en) | 2006-10-31 | 2009-04-28 | Dsm Solutions, Inc. | Semiconductor device, design method and structure |
US7692220B2 (en) | 2007-05-01 | 2010-04-06 | Suvolta, Inc. | Semiconductor device storage cell structure, method of operation, and method of manufacture |
US7727821B2 (en) | 2007-05-01 | 2010-06-01 | Suvolta, Inc. | Image sensing cell, device, method of operation, and method of manufacture |
US7629812B2 (en) | 2007-08-03 | 2009-12-08 | Dsm Solutions, Inc. | Switching circuits and methods for programmable logic devices |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4915668B1 (de) * | 1969-04-15 | 1974-04-16 |
-
1985
- 1985-12-18 JP JP60283195A patent/JPS61204961A/ja active Granted
-
1986
- 1986-02-25 EP EP86102409A patent/EP0193842B1/de not_active Expired
- 1986-02-25 DE DE8686102409T patent/DE3672627D1/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0193842A3 (en) | 1987-05-13 |
JPH0347744B2 (de) | 1991-07-22 |
EP0193842A2 (de) | 1986-09-10 |
EP0193842B1 (de) | 1990-07-18 |
JPS61204961A (ja) | 1986-09-11 |
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DE3672627D1 (de) | Integrierte halbleiterschaltung mit zwei epitaxieschichten aus verschiedenen leitungstypen. | |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |