DE3644299C2 - Verfahren zur Herstellung von Siliziumcarbidfasern - Google Patents

Verfahren zur Herstellung von Siliziumcarbidfasern

Info

Publication number
DE3644299C2
DE3644299C2 DE3644299A DE3644299A DE3644299C2 DE 3644299 C2 DE3644299 C2 DE 3644299C2 DE 3644299 A DE3644299 A DE 3644299A DE 3644299 A DE3644299 A DE 3644299A DE 3644299 C2 DE3644299 C2 DE 3644299C2
Authority
DE
Germany
Prior art keywords
catalyst
silicon
growth
carbon
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3644299A
Other languages
German (de)
English (en)
Other versions
DE3644299A1 (de
Inventor
Peter Dean Shalek
Joel David Katz
George Francis Hurley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Department of Energy
Original Assignee
US Department of Energy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by US Department of Energy filed Critical US Department of Energy
Publication of DE3644299A1 publication Critical patent/DE3644299A1/de
Application granted granted Critical
Publication of DE3644299C2 publication Critical patent/DE3644299C2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
    • B01J27/20—Carbon compounds
    • B01J27/22—Carbides
    • B01J27/224—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Catalysts (AREA)
  • Carbon And Carbon Compounds (AREA)
DE3644299A 1985-12-30 1986-12-23 Verfahren zur Herstellung von Siliziumcarbidfasern Expired - Fee Related DE3644299C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US81486685A 1985-12-30 1985-12-30

Publications (2)

Publication Number Publication Date
DE3644299A1 DE3644299A1 (de) 1987-07-02
DE3644299C2 true DE3644299C2 (de) 1995-09-21

Family

ID=25216204

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3644299A Expired - Fee Related DE3644299C2 (de) 1985-12-30 1986-12-23 Verfahren zur Herstellung von Siliziumcarbidfasern

Country Status (6)

Country Link
JP (1) JPH0791158B2 (fr)
CA (1) CA1275088A (fr)
DE (1) DE3644299C2 (fr)
FR (1) FR2592399B1 (fr)
GB (1) GB2186208B (fr)
IT (1) IT1198258B (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4911781A (en) * 1987-05-05 1990-03-27 The Standard Oil Company VLS Fiber growth process
EP0290258B1 (fr) * 1987-05-05 1992-09-16 The Standard Oil Company Procédé de croissance de fibres par le mécanisme VLS
NL9300816A (nl) * 1993-05-12 1994-12-01 Univ Delft Tech Werkwijze voor de bereiding van een poreus siliciumcarbide.
US5383421A (en) * 1993-05-19 1995-01-24 The Dow Chemical Company Method for forming beta-silicon carbide whiskers, singly or in a matrix, using an organotitanium coordination compound catalyst
CN113564687B (zh) * 2021-08-24 2022-07-22 安徽工业大学 一种铬催化的碳化硅晶须及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1195729B (de) * 1958-10-23 1965-07-01 Siemens Ag Verfahren zum Herstellen von Koerpern aus hochreinem Siliziumkarbid
GB1077667A (en) * 1963-10-08 1967-08-02 Atomic Energy Authority Uk Improvements in or relating to nuclear fuel material
NL143436B (nl) * 1966-12-14 1974-10-15 Philips Nv Werkwijze voor het vervaardigen van draadvormige siliciumcarbide kristallen en voorwerpen geheel of voor een deel bestaande uit deze kristallen.
GB1242051A (en) * 1967-05-08 1971-08-11 Nat Res Dev Improvements in the manufacture of silicon carbide
US3622272A (en) * 1968-04-01 1971-11-23 Gen Technologies Corp Method of growing silicon carbide whiskers
GB1280648A (en) * 1969-08-29 1972-07-05 Laporte Industries Ltd Refractory compounds
JPS5821578B2 (ja) * 1975-08-30 1983-05-02 松下電工株式会社 断熱材
JPS57101000A (en) * 1980-12-12 1982-06-23 Sumitomo Electric Ind Ltd Preparation of ceramic whisker
JPS599220A (ja) * 1982-06-30 1984-01-18 Shin Etsu Chem Co Ltd 炭化けい素繊維の製造方法
JPS61291498A (ja) * 1985-06-17 1986-12-22 Shin Etsu Chem Co Ltd 炭化けい素ウイスカ−の製造方法

Also Published As

Publication number Publication date
IT8622872A0 (it) 1986-12-24
IT8622872A1 (it) 1988-06-24
GB2186208B (en) 1989-10-25
JPS62158200A (ja) 1987-07-14
FR2592399A1 (fr) 1987-07-03
GB2186208A (en) 1987-08-12
CA1275088A (fr) 1990-10-09
JPH0791158B2 (ja) 1995-10-04
DE3644299A1 (de) 1987-07-02
GB8629499D0 (en) 1987-01-21
IT1198258B (it) 1988-12-21
FR2592399B1 (fr) 1995-12-22

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee