FR2592399A1 - Procede de fabrication de trichites de carbure de silicium dans lequel on utilise un catalyseur metallique. - Google Patents

Procede de fabrication de trichites de carbure de silicium dans lequel on utilise un catalyseur metallique.

Info

Publication number
FR2592399A1
FR2592399A1 FR8618275A FR8618275A FR2592399A1 FR 2592399 A1 FR2592399 A1 FR 2592399A1 FR 8618275 A FR8618275 A FR 8618275A FR 8618275 A FR8618275 A FR 8618275A FR 2592399 A1 FR2592399 A1 FR 2592399A1
Authority
FR
France
Prior art keywords
carbon
silicon carbide
metal catalyst
trichites
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8618275A
Other languages
English (en)
Other versions
FR2592399B1 (fr
Inventor
Peter Dean Shalek
Joel David Katz
George Francis Hurley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Department of Energy
Original Assignee
US Department of Energy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by US Department of Energy filed Critical US Department of Energy
Publication of FR2592399A1 publication Critical patent/FR2592399A1/fr
Application granted granted Critical
Publication of FR2592399B1 publication Critical patent/FR2592399B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J27/00Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
    • B01J27/20Carbon compounds
    • B01J27/22Carbides
    • B01J27/224Silicon carbide
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005Growth of whiskers or needles
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/36Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Catalysts (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

Le procédé consiste : (a) à préallier un catalyseur métallique avec du carbone, du silicium ou un mélange de carbone et de silicium ; (b) à appliquer ce catalyseur préallié à un substrat de carbone ; (c) à chauffer ce substrat avec du catalyseur préallié appliqué en atmosphère réductrice : (d) à introduire des gaz contenant du silicium et du carbone dans cette atmosphère ; (e) à maintenir le débit de ces gaz ; et (f) à refroidir les trichites de carbure de silicium. Les trichites sont utilisés comme matières de renfort composites pour des métaux, matières plastiques et céramiques.
FR8618275A 1985-12-30 1986-12-29 Procede de fabrication de trichites de carbure de silicium dans lequel on utilise un catalyseur metallique. Expired - Fee Related FR2592399B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US81486685A 1985-12-30 1985-12-30

Publications (2)

Publication Number Publication Date
FR2592399A1 true FR2592399A1 (fr) 1987-07-03
FR2592399B1 FR2592399B1 (fr) 1995-12-22

Family

ID=25216204

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8618275A Expired - Fee Related FR2592399B1 (fr) 1985-12-30 1986-12-29 Procede de fabrication de trichites de carbure de silicium dans lequel on utilise un catalyseur metallique.

Country Status (6)

Country Link
JP (1) JPH0791158B2 (fr)
CA (1) CA1275088A (fr)
DE (1) DE3644299C2 (fr)
FR (1) FR2592399B1 (fr)
GB (1) GB2186208B (fr)
IT (1) IT1198258B (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0290258A1 (fr) * 1987-05-05 1988-11-09 The Standard Oil Company Procédé de croissance de fibres par le mécanisme VLS
US4911781A (en) * 1987-05-05 1990-03-27 The Standard Oil Company VLS Fiber growth process
NL9300816A (nl) * 1993-05-12 1994-12-01 Univ Delft Tech Werkwijze voor de bereiding van een poreus siliciumcarbide.

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5383421A (en) * 1993-05-19 1995-01-24 The Dow Chemical Company Method for forming beta-silicon carbide whiskers, singly or in a matrix, using an organotitanium coordination compound catalyst
CN113564687B (zh) * 2021-08-24 2022-07-22 安徽工业大学 一种铬催化的碳化硅晶须及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1213156A (en) * 1966-12-14 1970-11-18 Philips Electronic Associated Manufacturing filamentary silicon carbide crystals
DE2042813A1 (de) * 1969-08-29 1971-04-08 Laporte Industries Ltd Verfahren zur Herstellung von Silicium carbid Einkristallen in Whisker Form
US3622272A (en) * 1968-04-01 1971-11-23 Gen Technologies Corp Method of growing silicon carbide whiskers
FR2529584A1 (fr) * 1982-06-30 1984-01-06 Shinetsu Chemical Co Procede de fabrication de fibres de carbure de silicium

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1195729B (de) * 1958-10-23 1965-07-01 Siemens Ag Verfahren zum Herstellen von Koerpern aus hochreinem Siliziumkarbid
GB1077667A (en) * 1963-10-08 1967-08-02 Atomic Energy Authority Uk Improvements in or relating to nuclear fuel material
GB1242051A (en) * 1967-05-08 1971-08-11 Nat Res Dev Improvements in the manufacture of silicon carbide
JPS5821578B2 (ja) * 1975-08-30 1983-05-02 松下電工株式会社 断熱材
JPS57101000A (en) * 1980-12-12 1982-06-23 Sumitomo Electric Ind Ltd Preparation of ceramic whisker
JPS61291498A (ja) * 1985-06-17 1986-12-22 Shin Etsu Chem Co Ltd 炭化けい素ウイスカ−の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1213156A (en) * 1966-12-14 1970-11-18 Philips Electronic Associated Manufacturing filamentary silicon carbide crystals
GB1213867A (en) * 1966-12-14 1970-11-25 Philips Electronic Associated Method of manufacturing silicon carbide single crystal filaments
US3622272A (en) * 1968-04-01 1971-11-23 Gen Technologies Corp Method of growing silicon carbide whiskers
DE2042813A1 (de) * 1969-08-29 1971-04-08 Laporte Industries Ltd Verfahren zur Herstellung von Silicium carbid Einkristallen in Whisker Form
FR2529584A1 (fr) * 1982-06-30 1984-01-06 Shinetsu Chemical Co Procede de fabrication de fibres de carbure de silicium

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0290258A1 (fr) * 1987-05-05 1988-11-09 The Standard Oil Company Procédé de croissance de fibres par le mécanisme VLS
US4911781A (en) * 1987-05-05 1990-03-27 The Standard Oil Company VLS Fiber growth process
NL9300816A (nl) * 1993-05-12 1994-12-01 Univ Delft Tech Werkwijze voor de bereiding van een poreus siliciumcarbide.

Also Published As

Publication number Publication date
IT8622872A0 (it) 1986-12-24
IT8622872A1 (it) 1988-06-24
GB2186208B (en) 1989-10-25
JPS62158200A (ja) 1987-07-14
GB2186208A (en) 1987-08-12
CA1275088A (fr) 1990-10-09
JPH0791158B2 (ja) 1995-10-04
DE3644299A1 (de) 1987-07-02
GB8629499D0 (en) 1987-01-21
DE3644299C2 (de) 1995-09-21
IT1198258B (it) 1988-12-21
FR2592399B1 (fr) 1995-12-22

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