DE3642221A1 - Verfahren zur herstellung eines balles am ende eines metalldrahtes - Google Patents

Verfahren zur herstellung eines balles am ende eines metalldrahtes

Info

Publication number
DE3642221A1
DE3642221A1 DE19863642221 DE3642221A DE3642221A1 DE 3642221 A1 DE3642221 A1 DE 3642221A1 DE 19863642221 DE19863642221 DE 19863642221 DE 3642221 A DE3642221 A DE 3642221A DE 3642221 A1 DE3642221 A1 DE 3642221A1
Authority
DE
Germany
Prior art keywords
ball
wire
metal wire
discharge
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19863642221
Other languages
German (de)
English (en)
Other versions
DE3642221C2 (enExample
Inventor
Jitsuho Hirota
Kazumichi Machida
Masaaki Shimotomai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3642221A1 publication Critical patent/DE3642221A1/de
Application granted granted Critical
Publication of DE3642221C2 publication Critical patent/DE3642221C2/de
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B23K20/007—Ball bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01551—Changing the shapes of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07141—Means for applying energy, e.g. ovens or lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07511—Treating the bonding area before connecting, e.g. by applying flux or cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Wire Bonding (AREA)
DE19863642221 1985-12-10 1986-12-10 Verfahren zur herstellung eines balles am ende eines metalldrahtes Granted DE3642221A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60278641A JPS62136831A (ja) 1985-12-10 1985-12-10 ワイヤボンデイング用ボ−ルの形成方法

Publications (2)

Publication Number Publication Date
DE3642221A1 true DE3642221A1 (de) 1987-06-11
DE3642221C2 DE3642221C2 (enExample) 1991-11-28

Family

ID=17600106

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19863642221 Granted DE3642221A1 (de) 1985-12-10 1986-12-10 Verfahren zur herstellung eines balles am ende eines metalldrahtes

Country Status (3)

Country Link
US (1) US4739142A (enExample)
JP (1) JPS62136831A (enExample)
DE (1) DE3642221A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002011938A1 (de) * 2000-08-08 2002-02-14 Robert Bosch Gmbh Verfahren zur kontaktierung elektronischer schaltungen und elektronische schaltung
US8418911B2 (en) 2008-12-09 2013-04-16 Roland Werthschutzky Method for the miniaturizable contacting of insulated wires
EP2313229B1 (de) * 2008-07-30 2020-09-09 Fronius International GmbH VERFAHREN UND VORRICHTUNG ZUR FORMUNG DES SCHWEIßDRAHTENDES

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5097100A (en) * 1991-01-25 1992-03-17 Sundstrand Data Control, Inc. Noble metal plated wire and terminal assembly, and method of making the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD221310A1 (de) * 1983-11-29 1985-04-17 Mikroelektronik Zt Forsch Tech Anordnung zum anschmelzen von kugelaehnlichen verdickungen
DE3606244A1 (de) * 1986-02-26 1987-08-27 Ruhrtal Gmbh Kontaktsystem fuer ein elektrisches schaltgeraet

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3598954A (en) * 1969-05-12 1971-08-10 North American Rockwell Control for reverse-polarity welding
JPS53123663A (en) * 1977-04-04 1978-10-28 Mitsubishi Electric Corp Cutting device of metal thin wire
US4388512A (en) * 1981-03-09 1983-06-14 Raytheon Company Aluminum wire ball bonding apparatus and method
JPS58118122A (ja) * 1982-01-06 1983-07-14 Hitachi Ltd 金属ワイヤのボ−ル形成法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD221310A1 (de) * 1983-11-29 1985-04-17 Mikroelektronik Zt Forsch Tech Anordnung zum anschmelzen von kugelaehnlichen verdickungen
DE3606244A1 (de) * 1986-02-26 1987-08-27 Ruhrtal Gmbh Kontaktsystem fuer ein elektrisches schaltgeraet

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002011938A1 (de) * 2000-08-08 2002-02-14 Robert Bosch Gmbh Verfahren zur kontaktierung elektronischer schaltungen und elektronische schaltung
EP2313229B1 (de) * 2008-07-30 2020-09-09 Fronius International GmbH VERFAHREN UND VORRICHTUNG ZUR FORMUNG DES SCHWEIßDRAHTENDES
US8418911B2 (en) 2008-12-09 2013-04-16 Roland Werthschutzky Method for the miniaturizable contacting of insulated wires

Also Published As

Publication number Publication date
US4739142A (en) 1988-04-19
JPS62136831A (ja) 1987-06-19
DE3642221C2 (enExample) 1991-11-28

Similar Documents

Publication Publication Date Title
DE1300788C2 (de) Verfahren zur herstellung kugeliger loetperlen auf traegerplatten
DE3042085C2 (de) Halbleiteranordnung
DE1930669C2 (de) Verfahren zur Herstellung einer integrierten Halbleiterschaltung
DE2263149C3 (de) Isolierschicht-Feldeffekttransistor und Verfahren zu seiner Herstellung
DE1464357B1 (de) Verfahren zur Herstellung einer ohmschen Verbindung zwischen einem Silizium-Halbleiterkoerper und einem metallischen Traegerteil
DE3028044C1 (de) Lötfähiges Schichtensystem
EP0394875A1 (de) Verfahren zur Herstellung von Leiterbahnmustern
DE1614306C3 (de) Verfahren zur Herstellung elektrischer Anschlüsse auf einer Oberfläche eines elektronischen Bauelementes und durch Anwendung dieses Verfahrens hergestelltes Bauelement
DE1515574A1 (de) Verfahren zur Befestigung von Anschlussleitungen an duenne Filme
DE1627762A1 (de) Verfahren zum Herstellen von Halbleiterbauelementen
DE2047799C3 (de) Mehrlagige Leiterschichten auf einem Halbleitersubstrat und Verfahren zum Herstellen derartiger mehrlagiger Leiterschichten
DE3722576C2 (enExample)
DE3382828T2 (de) Metalldraht für integrierte Schaltungen
DE1807862B2 (de) Elektrisch beheizbare Glasscheibe mit Widerstandsstreifen aus einer eingebrannten elektrisch leitenden Fritte und mindestens einem Paar Sammelschienen, die sich durch außerordentlich hohe Haftfestigkeit an der Glasoberfläche auszeichnen, sowie Verfahren zu deren Herstellung
DE4112416C2 (enExample)
DE3642221C2 (enExample)
DE19743737B4 (de) Verfahren zur Bildung einer Drahtbondelektrode auf einer Dickschichtleiterplatte
DE2550275A1 (de) Verfahren zum herstellen von barrieren fuer loetzinn auf leiterzuegen
DE1915148C3 (de) Verfahren zur Herstellung metallischer Höcker bei Halbleiteranordnungen
DE1952499A1 (de) Verfahren zum Herstellen eines Halbleiterbauelements
DE69409334T2 (de) Verfahren zur Verbindung einer Molybdän Folie mit einem Teil eines Molybdän Leiters und Herstellungsmethode eines hermetisch eingeschossenen Lampenteils unter Verwendung dieses Verfahrens
DE19930190A1 (de) Lötmittel zur Verwendung bei Duffusionslötprozessen sowie Verfahren zur Herstellung von Lötverbindungen unter Verwendung des Lötmittels
DE2849606A1 (de) Basismetallplattenmaterial fuer direkt erhitzte oxidkathoden
DE1764477B1 (de) Keramischer kondensator
DE2207012C2 (de) Verfahren zur Kontaktierung von Halbleiterbauelementen

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee