DE3600169A1 - Maskenstruktur zur lithographie, verfahren zu ihrer herstellung und lithographisches verfahren - Google Patents

Maskenstruktur zur lithographie, verfahren zu ihrer herstellung und lithographisches verfahren

Info

Publication number
DE3600169A1
DE3600169A1 DE19863600169 DE3600169A DE3600169A1 DE 3600169 A1 DE3600169 A1 DE 3600169A1 DE 19863600169 DE19863600169 DE 19863600169 DE 3600169 A DE3600169 A DE 3600169A DE 3600169 A1 DE3600169 A1 DE 3600169A1
Authority
DE
Germany
Prior art keywords
film
mask
holding
thin film
mask structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19863600169
Other languages
German (de)
English (en)
Other versions
DE3600169C2 (en, 2012
Inventor
Hideo Kato
Keiko Machida Tokio/Tokyo Matsuda
Masaaki Yokohama Kanagawa Matsushima
Hirofumi Yokohama Kanagawa Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60000664A external-priority patent/JPS61159654A/ja
Priority claimed from JP60001772A external-priority patent/JPS61160746A/ja
Priority claimed from JP60001890A external-priority patent/JPS61160747A/ja
Priority claimed from JP9019985A external-priority patent/JPH0690998B2/ja
Priority claimed from JP9012585A external-priority patent/JPH0656830B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3600169A1 publication Critical patent/DE3600169A1/de
Application granted granted Critical
Publication of DE3600169C2 publication Critical patent/DE3600169C2/de
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE19863600169 1985-01-07 1986-01-07 Maskenstruktur zur lithographie, verfahren zu ihrer herstellung und lithographisches verfahren Granted DE3600169A1 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP60000664A JPS61159654A (ja) 1985-01-07 1985-01-07 リソグラフイ−法及びリソグラフイ−用マスク保持体
JP60001772A JPS61160746A (ja) 1985-01-08 1985-01-08 リソグラフイ−法及びリソグラフイ−用マスク保持体
JP60001890A JPS61160747A (ja) 1985-01-09 1985-01-09 リソグラフイ−法及びリソグラフイ−用マスク保持体
JP9019985A JPH0690998B2 (ja) 1985-04-25 1985-04-25 Ｘ線リソグラフィー用マスク構造体の製造方法
JP9012585A JPH0656830B2 (ja) 1985-04-26 1985-04-26 リソグラフイ−用マスク構造体

Publications (2)

Publication Number Publication Date
DE3600169A1 true DE3600169A1 (de) 1986-07-10
DE3600169C2 DE3600169C2 (en, 2012) 1990-07-26

Family

ID=27517985

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19863600169 Granted DE3600169A1 (de) 1985-01-07 1986-01-07 Maskenstruktur zur lithographie, verfahren zu ihrer herstellung und lithographisches verfahren

Country Status (2)

Country Link
US (1) US4837123A (en, 2012)
DE (1) DE3600169A1 (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2641383A1 (fr) * 1988-12-30 1990-07-06 Technion Res & Dev Foundation Procede pour l'obtention des masques pour lithographie aux rayons x

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196283A (en) * 1989-03-09 1993-03-23 Canon Kabushiki Kaisha X-ray mask structure, and x-ray exposure process
US4932872A (en) * 1989-06-16 1990-06-12 Lepton Inc. Method for fabricating X-ray masks
DE3920788C1 (en, 2012) * 1989-06-24 1990-12-13 Kernforschungszentrum Karlsruhe Gmbh, 7500 Karlsruhe, De
US5578377A (en) * 1993-04-21 1996-11-26 Asahi Glass Company Ltd. Colored thin film-forming coating solution and colored thin film obtained by such coating solution
US5759911A (en) * 1995-08-22 1998-06-02 International Business Machines Corporation Self-aligned metallurgy
JPH1050584A (ja) * 1996-08-07 1998-02-20 Nikon Corp マスク保持装置
JP4011687B2 (ja) 1997-10-01 2007-11-21 キヤノン株式会社 マスク構造体、該マスク構造体を用いた露光装置、該マスク構造体を用いた半導体デバイス製造方法
JP2000286187A (ja) 1999-03-31 2000-10-13 Canon Inc 露光装置、該露光装置に用いるマスク構造体、露光方法、前記露光装置を用いて作製された半導体デバイス、および半導体デバイス製造方法
US6617681B1 (en) * 1999-06-28 2003-09-09 Intel Corporation Interposer and method of making same
US6387787B1 (en) * 2001-03-02 2002-05-14 Motorola, Inc. Lithographic template and method of formation and use
US6680130B2 (en) * 2002-05-28 2004-01-20 Agere Systems, Inc. High K dielectric material and method of making a high K dielectric material
JP4220229B2 (ja) * 2002-12-16 2009-02-04 大日本印刷株式会社 荷電粒子線露光用マスクブランクスおよび荷電粒子線露光用マスクの製造方法
US7420653B2 (en) * 2003-10-02 2008-09-02 Asml Netherlands B.V. Lithographic projection apparatus, mirror, method of supplying a protective cap layer, device manufacturing method and device manufactured accordingly
JP2008122275A (ja) * 2006-11-14 2008-05-29 Konica Minolta Medical & Graphic Inc シンチレータパネル、その製造方法及び放射線イメージセンサ
US8366946B2 (en) * 2009-08-28 2013-02-05 United States Of America As Represented By The Secretary Of The Navy Frame for holding laminate during processing
KR102268992B1 (ko) * 2013-05-01 2021-06-28 코닌클리케 필립스 엔.브이. 부분적으로 자립하는 그라핀 결정막을 제조하는 방법 및 이러한 막을 포함하는 디바이스

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0097764A1 (en) * 1982-06-30 1984-01-11 International Business Machines Corporation X-ray lithographic mask

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57104141A (en) * 1980-12-22 1982-06-29 Dainippon Printing Co Ltd Photomask and photomask substrate
US4440841A (en) * 1981-02-28 1984-04-03 Dai Nippon Insatsu Kabushiki Kaisha Photomask and photomask blank
US4374912A (en) * 1981-03-31 1983-02-22 Dai Nippon Insatsu Kabushiki Kaisha Photomask and photomask blank
JPS57211732A (en) * 1981-06-24 1982-12-25 Toshiba Corp X ray exposing mask and manufacture thereof
JPS5831336A (ja) * 1981-08-19 1983-02-24 Konishiroku Photo Ind Co Ltd ホトマスク素材
US4563407A (en) * 1982-11-16 1986-01-07 Hoya Corporation Photo-mask blank comprising a shading layer having a variable etch rate
US4539278A (en) * 1984-03-12 1985-09-03 Eaton Corporation Mask structure for X-ray lithography and method for making same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0097764A1 (en) * 1982-06-30 1984-01-11 International Business Machines Corporation X-ray lithographic mask

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2641383A1 (fr) * 1988-12-30 1990-07-06 Technion Res & Dev Foundation Procede pour l'obtention des masques pour lithographie aux rayons x

Also Published As

Publication number Publication date
US4837123A (en) 1989-06-06
DE3600169C2 (en, 2012) 1990-07-26

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee