DE3539201C2 - - Google Patents
Info
- Publication number
- DE3539201C2 DE3539201C2 DE19853539201 DE3539201A DE3539201C2 DE 3539201 C2 DE3539201 C2 DE 3539201C2 DE 19853539201 DE19853539201 DE 19853539201 DE 3539201 A DE3539201 A DE 3539201A DE 3539201 C2 DE3539201 C2 DE 3539201C2
- Authority
- DE
- Germany
- Prior art keywords
- film
- aluminum nitride
- nitride film
- mask
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 202
- 239000000463 material Substances 0.000 claims description 122
- 239000010409 thin film Substances 0.000 claims description 103
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 102
- 239000010703 silicon Substances 0.000 claims description 102
- 229910052710 silicon Inorganic materials 0.000 claims description 102
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 87
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 80
- 229920001721 polyimide Polymers 0.000 claims description 74
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 46
- 229910052582 BN Inorganic materials 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 38
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 31
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 31
- 239000010931 gold Substances 0.000 claims description 30
- 238000001015 X-ray lithography Methods 0.000 claims description 28
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 26
- 229910052737 gold Inorganic materials 0.000 claims description 26
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 22
- 239000006096 absorbing agent Substances 0.000 claims description 19
- 239000011368 organic material Substances 0.000 claims description 18
- 229910010272 inorganic material Inorganic materials 0.000 claims description 16
- 239000011147 inorganic material Substances 0.000 claims description 16
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 239000004642 Polyimide Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 229910052715 tantalum Inorganic materials 0.000 claims description 11
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 239000002904 solvent Substances 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004952 Polyamide Substances 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229920002647 polyamide Polymers 0.000 claims description 3
- 229920000728 polyester Polymers 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 239000010948 rhodium Substances 0.000 claims description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 description 406
- 238000001459 lithography Methods 0.000 description 94
- 239000010410 layer Substances 0.000 description 93
- 235000012431 wafers Nutrition 0.000 description 90
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 42
- 239000000853 adhesive Substances 0.000 description 32
- 230000001070 adhesive effect Effects 0.000 description 32
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 26
- 229910052782 aluminium Inorganic materials 0.000 description 26
- 235000010210 aluminium Nutrition 0.000 description 26
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 26
- 230000015572 biosynthetic process Effects 0.000 description 25
- 239000000203 mixture Substances 0.000 description 24
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 18
- 230000005540 biological transmission Effects 0.000 description 17
- 239000007789 gas Substances 0.000 description 16
- 239000003973 paint Substances 0.000 description 15
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- 239000004593 Epoxy Substances 0.000 description 12
- 229920006267 polyester film Polymers 0.000 description 12
- 150000004767 nitrides Chemical class 0.000 description 11
- 239000011253 protective coating Substances 0.000 description 11
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 239000005297 pyrex Substances 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 229910052786 argon Inorganic materials 0.000 description 9
- 238000005546 reactive sputtering Methods 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 238000000866 electrolytic etching Methods 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- 238000004528 spin coating Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 241001676573 Minium Species 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 229910017083 AlN Inorganic materials 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- 239000002519 antifouling agent Substances 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 229910052740 iodine Inorganic materials 0.000 description 3
- 239000011630 iodine Substances 0.000 description 3
- 150000002576 ketones Chemical class 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 229920003051 synthetic elastomer Polymers 0.000 description 2
- 239000005061 synthetic rubber Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229920001651 Cyanoacrylate Polymers 0.000 description 1
- MWCLLHOVUTZFKS-UHFFFAOYSA-N Methyl cyanoacrylate Chemical compound COC(=O)C(=C)C#N MWCLLHOVUTZFKS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- -1 Polyp-xylylene Polymers 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 235000005505 Ziziphus oenoplia Nutrition 0.000 description 1
- 244000104547 Ziziphus oenoplia Species 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 150000004996 alkyl benzenes Chemical class 0.000 description 1
- 239000010426 asphalt Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- YACLQRRMGMJLJV-UHFFFAOYSA-N chloroprene Chemical compound ClC(=C)C=C YACLQRRMGMJLJV-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002688 persistence Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/167—X-ray
- Y10S430/168—X-ray exposure process
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31721—Of polyimide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31786—Of polyester [e.g., alkyd, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31855—Of addition polymer from unsaturated monomers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59231279A JPS61110139A (ja) | 1984-11-05 | 1984-11-05 | Ｘ線リソグラフイ−法及びｘ線リソグラフイ−用マスク保持体 |
| JP59237615A JPS61117545A (ja) | 1984-11-13 | 1984-11-13 | Ｘ線リソグラフイ−法及びｘ線リソグラフイ−用マスク保持体 |
| JP59239455A JPS61118754A (ja) | 1984-11-15 | 1984-11-15 | Ｘ線リソグラフイ−法及びｘ線リソグラフイ−用マスク保持体 |
| JP59242418A JPS61121055A (ja) | 1984-11-19 | 1984-11-19 | Ｘ線リソグラフイ−法及びｘ線リソグラフイ−用マスク保持体 |
| JP59248162A JPS61126551A (ja) | 1984-11-26 | 1984-11-26 | Ｘ線リソグラフイ−用マスク構造体の製造方法 |
| JP59261838A JPS61140942A (ja) | 1984-12-13 | 1984-12-13 | リソグラフイ−用マスク構造体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3539201A1 DE3539201A1 (de) | 1986-05-07 |
| DE3539201C2 true DE3539201C2 (en, 2012) | 1993-04-29 |
Family
ID=27554052
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19853539201 Granted DE3539201A1 (de) | 1984-11-05 | 1985-11-05 | Maskenstruktur fuer die lithografie, verfahren zu ihrer herstellung und lithografieverfahren |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4677042A (en, 2012) |
| DE (1) | DE3539201A1 (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023165814A1 (de) | 2022-03-01 | 2023-09-07 | Carl Zeiss Smt Gmbh | Verfahren zum bearbeiten eines werkstücks |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5112707A (en) * | 1983-09-26 | 1992-05-12 | Canon Kabushiki Kaisha | Mask structure for lithography |
| DE3435177A1 (de) * | 1983-09-26 | 1985-04-11 | Canon K.K., Tokio/Tokyo | Maske fuer lithographische zwecke |
| DE3524196C3 (de) * | 1984-07-06 | 1994-08-04 | Canon Kk | Lithografiemaske |
| US4735877A (en) * | 1985-10-07 | 1988-04-05 | Canon Kabushiki Kaisha | Lithographic mask structure and lithographic process |
| US4868093A (en) * | 1987-05-01 | 1989-09-19 | American Telephone And Telegraph Company, At&T Bell Laboratories | Device fabrication by X-ray lithography utilizing stable boron nitride mask |
| US4851692A (en) * | 1987-12-18 | 1989-07-25 | Master Images, Inc. | Cassette improved to reduce particle contamination of reticles during photolithographic processing operations |
| US5012500A (en) * | 1987-12-29 | 1991-04-30 | Canon Kabushiki Kaisha | X-ray mask support member, X-ray mask, and X-ray exposure process using the X-ray mask |
| US5005075A (en) * | 1989-01-31 | 1991-04-02 | Hoya Corporation | X-ray mask and method of manufacturing an X-ray mask |
| US5196283A (en) * | 1989-03-09 | 1993-03-23 | Canon Kabushiki Kaisha | X-ray mask structure, and x-ray exposure process |
| DE3920788C1 (en, 2012) * | 1989-06-24 | 1990-12-13 | Kernforschungszentrum Karlsruhe Gmbh, 7500 Karlsruhe, De | |
| FI93680C (fi) * | 1992-05-07 | 1995-05-10 | Outokumpu Instr Oy | Ohutkalvon tukirakenne ja menetelmä sen valmistamiseksi |
| US6029337A (en) * | 1994-06-06 | 2000-02-29 | Case Western Reserve University | Methods of fabricating micromotors with utilitarian features |
| US5705318A (en) * | 1994-06-06 | 1998-01-06 | Case Western Reserve University | Micromotors and methods of fabrication |
| US6360424B1 (en) | 1994-06-06 | 2002-03-26 | Case Western Reserve University | Method of making micromotors with utilitarian features |
| US5788468A (en) * | 1994-11-03 | 1998-08-04 | Memstek Products, Llc | Microfabricated fluidic devices |
| US5874770A (en) * | 1996-10-10 | 1999-02-23 | General Electric Company | Flexible interconnect film including resistor and capacitor layers |
| JP4011687B2 (ja) | 1997-10-01 | 2007-11-21 | キヤノン株式会社 | マスク構造体、該マスク構造体を用いた露光装置、該マスク構造体を用いた半導体デバイス製造方法 |
| JP2000286187A (ja) | 1999-03-31 | 2000-10-13 | Canon Inc | 露光装置、該露光装置に用いるマスク構造体、露光方法、前記露光装置を用いて作製された半導体デバイス、および半導体デバイス製造方法 |
| US7351503B2 (en) * | 2001-01-22 | 2008-04-01 | Photronics, Inc. | Fused silica pellicle in intimate contact with the surface of a photomask |
| CN103378128A (zh) * | 2012-04-17 | 2013-10-30 | 中芯国际集成电路制造(上海)有限公司 | 钝化层结构及其形成方法、刻蚀方法 |
| JP6313161B2 (ja) | 2014-08-27 | 2018-04-18 | 信越化学工業株式会社 | ペリクルフレーム及びペリクル |
| DE102023111715B3 (de) * | 2023-05-05 | 2024-03-07 | Jenoptik Optical Systems Gmbh | Verfahren und Trägersubstrat zur Herstellung eines Bauelementes |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4253029A (en) * | 1979-05-23 | 1981-02-24 | Bell Telephone Laboratories, Incorporated | Mask structure for x-ray lithography |
| US4293624A (en) * | 1979-06-26 | 1981-10-06 | The Perkin-Elmer Corporation | Method for making a mask useful in X-ray lithography |
| US4260670A (en) * | 1979-07-12 | 1981-04-07 | Western Electric Company, Inc. | X-ray mask |
| JPS5831336A (ja) * | 1981-08-19 | 1983-02-24 | Konishiroku Photo Ind Co Ltd | ホトマスク素材 |
-
1985
- 1985-11-01 US US06/794,180 patent/US4677042A/en not_active Expired - Lifetime
- 1985-11-05 DE DE19853539201 patent/DE3539201A1/de active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023165814A1 (de) | 2022-03-01 | 2023-09-07 | Carl Zeiss Smt Gmbh | Verfahren zum bearbeiten eines werkstücks |
| DE102022202059A1 (de) | 2022-03-01 | 2023-09-07 | Carl Zeiss Smt Gmbh | Verfahren zum Bearbeiten eines Werkstücks |
Also Published As
| Publication number | Publication date |
|---|---|
| US4677042A (en) | 1987-06-30 |
| DE3539201A1 (de) | 1986-05-07 |
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