DE3582606D1 - Halbleiterspeicheranordnung. - Google Patents

Halbleiterspeicheranordnung.

Info

Publication number
DE3582606D1
DE3582606D1 DE8585301816T DE3582606T DE3582606D1 DE 3582606 D1 DE3582606 D1 DE 3582606D1 DE 8585301816 T DE8585301816 T DE 8585301816T DE 3582606 T DE3582606 T DE 3582606T DE 3582606 D1 DE3582606 D1 DE 3582606D1
Authority
DE
Germany
Prior art keywords
row decoder
circuit
normal row
output line
decoder circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585301816T
Other languages
German (de)
English (en)
Inventor
Hideshi Miyatake
Kazuyasu Fujishima
Kazuhiro Shimotori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE3582606D1 publication Critical patent/DE3582606D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G11C29/787—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using a fuse hierarchy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
DE8585301816T 1984-03-16 1985-03-15 Halbleiterspeicheranordnung. Expired - Lifetime DE3582606D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59051861A JPS60195797A (ja) 1984-03-16 1984-03-16 半導体記憶装置の冗長回路

Publications (1)

Publication Number Publication Date
DE3582606D1 true DE3582606D1 (de) 1991-05-29

Family

ID=12898647

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585301816T Expired - Lifetime DE3582606D1 (de) 1984-03-16 1985-03-15 Halbleiterspeicheranordnung.

Country Status (4)

Country Link
US (1) US4694432A (cg-RX-API-DMAC7.html)
EP (1) EP0155829B1 (cg-RX-API-DMAC7.html)
JP (1) JPS60195797A (cg-RX-API-DMAC7.html)
DE (1) DE3582606D1 (cg-RX-API-DMAC7.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0257120B1 (de) * 1986-08-22 1992-06-10 International Business Machines Corporation Dekodierverfahren und -Schaltungsanordnung für einen redundanten CMOS-Halbleiterspeicher
US4855613A (en) * 1987-05-08 1989-08-08 Mitsubishi Denki Kabushiki Kaisha Wafer scale integration semiconductor device having improved chip power-supply connection arrangement
JPH0758599B2 (ja) * 1987-09-08 1995-06-21 日本電気株式会社 冗長セルを有する半導体記憶装置
JP2690489B2 (ja) * 1988-01-29 1997-12-10 日本電気アイシーマイコンシステム株式会社 半導体メモリ装置
JPH073754B2 (ja) * 1988-03-08 1995-01-18 三菱電機株式会社 半導体記憶装置
JPH0235699A (ja) * 1988-07-26 1990-02-06 Nec Corp 化合物半導体メモリデバイス
US5128557A (en) * 1989-05-22 1992-07-07 Ncr Corporation Clamping circuit for data transfer bus
US5321510A (en) * 1989-11-13 1994-06-14 Texas Instruments Incorporated Serial video processor
JP2782948B2 (ja) * 1990-11-16 1998-08-06 日本電気株式会社 半導体メモリ
KR0145223B1 (ko) * 1995-04-24 1998-08-17 김광호 리던던시 기능을 가지는 반도체 메모리 장치
EP0953983A3 (en) * 1996-03-01 2005-10-05 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device with clamping circuit for preventing malfunction
US6275426B1 (en) * 1999-10-18 2001-08-14 Netlogic Microsystems, Inc. Row redundancy for content addressable memory

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5685934A (en) * 1979-12-14 1981-07-13 Nippon Telegr & Teleph Corp <Ntt> Control signal generating circuit
DE3028778C2 (de) * 1980-07-29 1983-06-16 Siemens AG, 1000 Berlin und 8000 München Decodiereinrichtung
JPS58155593A (ja) * 1982-03-10 1983-09-16 Hitachi Ltd 半導体記憶装置
JPS58164099A (ja) * 1982-03-25 1983-09-28 Toshiba Corp 半導体メモリ−
JPS58208998A (ja) * 1982-05-28 1983-12-05 Toshiba Corp 半導体ｃｍｏｓメモリ
JPS59157892A (ja) * 1983-02-28 1984-09-07 Nec Corp 冗長回路
JPS60130000A (ja) * 1983-12-15 1985-07-11 Mitsubishi Electric Corp 半導体記憶装置

Also Published As

Publication number Publication date
US4694432A (en) 1987-09-15
JPH0348599B2 (cg-RX-API-DMAC7.html) 1991-07-24
JPS60195797A (ja) 1985-10-04
EP0155829A3 (en) 1987-09-30
EP0155829A2 (en) 1985-09-25
EP0155829B1 (en) 1991-04-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Representative=s name: PRUFER & PARTNER GBR, 81545 MUENCHEN